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2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous: ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High
2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous: ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High

2SJ221

Silicon P Channel MOS FET

REJ03G0851-0200

(Previous: ADE-208-1185)

Rev.2.00

Sep 07, 2005

Description

High speed power switching

Features

Low on-resistance

High speed switching

Low drive current

4 V gate drive device Can be driven from 5 V source

Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)

D G 1 2 3 S
D
G
1 2 3
S

1. Gate

2. Drain (Flange)

3. Source

2SJ221

Absolute Maximum Ratings

(Ta = 25°C)

 

Item

 

Symbol

   

Value

Unit

Drain to source voltage

   

V

DSS

   

–100

V

Gate to source voltage

   

V

GSS

   

±20

V

Drain current

   

I

D

 

–20

A

Drain peak current

   

I D (pulse) Note 1

 

–80

A

Body to drain diode reverse drain current

   

I

DR

   

–20

A

Channel dissipation

   

Pch Note 2

   

75

W

Channel temperature

   

Tch

   

150

°C

Storage temperature

   

Tstg

 

–55 to +150

 

°C

Notes: 1.

PW 10 µs, duty cycle 1%

 

2.

Value at Tc = 25°C

Electrical Characteristics

 

(Ta = 25°C)

 

Item

Symbol

Min

Typ

Max

Unit

 

Test Conditions

Drain to source breakdown voltage

V

(BR) DSS

–100

V

I D = –10 mA, V GS = 0

Gate to source breakdown voltage

V

(BR) GSS

±20

V

I G = ±100 µA, V DS = 0

Gate to source leak current

 

I GSS

±10

µA

V

GS = ±16 V, V DS = 0

Zero gate voltage drain current

 

I DSS

–250

µA

V

DS = –80 V, V GS = 0

Gate to source cutoff voltage

V GS (off)

–1.0

–2.0

V

I D = –1 mA, V DS = –10 V

Static drain to source on state resistance

R DS (on)

0.12

0.16

I D = –10 A, V GS = –10 V Note 3

R DS (on)

0.16

0.22

I D = –10 A, V GS = –4 V Note 3

Forward transfer admittance

 

|y

fs |

7.5

12

S

I D = –10 A, V DS = –10 V Note 3

Input capacitance

 

Ciss

1800

pF

V

DS = –10 V

Output capacitance

Coss

680

pF

V

GS = 0

Reverse transfer capacitance

Crss

145

pF

f

= 1 MHz

Turn-on delay time

t d (on)

15

ns

I D = –10 A

Rise time

   

t

r

115

ns

V

GS = –10 V

Turn-off delay time

t d (off)

320

ns

R

L = 3

Fall time

   

t

f

170

ns

 

Body to drain diode forward voltage

 

V

DF

–1.05

V

I F = –20 A, V GS = 0

Body to drain diode reverse recovery time

 

t

rr

280

ns

I F = –20 A, V GS = 0

 

di

F /dt = 50 A/µs

Note:

3.

Pulse test

2SJ221

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

10 100 µs 1 µs ms DC Operation (Tc = 25°C) PW = 10 ms
10
100 µs 1 µs ms
DC Operation (Tc = 25°C)
PW = 10 ms (1 shot)
120
–100
–30
80
–10
–3
Operation
in
40
–1
this area
is
limited
by
R DS (on)
–0.3
Ta =
25°C
0
–0.1 –1
0
50
100
150
–3
–10
–30
–100 –300 –1000
Case Temperature
Tc (°C)
Drain to Source Voltage
(V)
V DS
Typical Output Characteristics
Typical Transfer Characteristics
–50
–20
–6 V
–10 V
V
DS = –10 V
–8 V
Pulse Test
Pulse Test
–40
–16
–5 V
–30
–12
–4 V
–20
–8
V
= –3 V
–10
GS
–4
75°C
Tc = 25°C
–25°C
0
0
0
–4
–8
–12
–16
–20
0
–1
–2
–3
–4
–5
Drain to Source Voltage
(V)
Gate to Source Voltage
(V)
V DS
V GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–10
5
Pulse Test
3
Pulse Test
–8
1
–6
0.3
V
=
–4
V
GS
0.1
–4
–10
V
–20 A
0.03
–2
–10 A
I D = –5 A
0.01
0
0.005
0
–4
–8
–12
–16
–20
–0.1
–0.3
–1
–3
–10
–30
–100
Gate to Source Voltage
(V)
Drain Current
(A)
V GS
I D
Drain to Source Saturation Voltage
V DS (on)
(V)
Drain Current
I D
(A)
Channel Dissipation
Pch (W)
Static Drain to Source on State Resistance
R DS (on)
(Ω)
Drain Current
I D
(A)
Drain Current
I D
(A)

2SJ221

Static Drain to Source on State Resistance vs. Case Temperature

Forward Transfer Admittance vs. Drain Current

1.0 100 Pulse Test –25°C 30 0.8 Tc = 25°C 10 0.6 I D =
1.0
100
Pulse
Test
–25°C
30
0.8
Tc
= 25°C
10
0.6
I D = –20 A
3
–5 V, –10
A
75°C
0.4
1
V
= –4 V
GS
0.2
0.3
–20
A
V DS = –10
Pulse Test
V
–10 V
–5 V, –10
A
0
0.1
–40
0
40
80
120
160
–0.1 –0.3
–1
–3
–10
–30
–100
Case Temperature
Tc
(°C)
Drain Current
(A)
I D
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
10000
3000
3000
1000
Ciss
1000
Coss
300
300
100
Crss
100
30
30
di
/
dt
= 50 A / µs
V
= 0
GS
10
V
=
0, Ta =
25°C
f
= 1
MHz
GS
5
10
–0.1
–0.3
–1
–3
–10
–30
–100
0
–10
–20
–30
–40
–50
Reverse Drain Current
(A)
Drain to Source Voltage
(V)
I DR
V DS
Dynamic Input Characteristics
Switching Characteristics
0
0
5000
V DD = –10 V
V
= –10
V,
V
=
–30
V
3000
GS
DD
–25 V
PW = 2 µs,
duty ≤ 1
%
–50 V
–20
–4
1000
t
d(off)
–40
–8
300
V
= –50 V
DD
V
DS
–25 V
t
f
V
–10 V
GS
100
–60
–12
30
t
r
t
–80
–16
d(on)
10
I
= –20 A
D
–100
–20
5
0 20
40
60
80
100
–0.1 –0.3
–1
–3
–10
–30
–100
Gate Charge
Qg
(nc)
Drain Current
(A)
I D
Static Drain to Source on State Resistance
Drain to Source Voltage
V DS
(V)
Reverse Recovery Time
t rr (ns)
R DS (on)
(Ω)
Gate to Source Voltage
V GS
(V)
Switching Time
t
(ns)
Capacitance
C (pF)
Forward Transfer Admittance |y fs |
(S)

2SJ221

Reverse Drain Current vs. Source to Drain Voltage

–50 Pulse Test –40 –30 –20 –10 V –5 V –10 V GS = 0,
–50
Pulse Test
–40
–30
–20
–10 V
–5 V
–10
V GS = 0, 5 V
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
(V)
V SD
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D = 1
1
0.5
0.3
0.2
θch – c
(t) =
γ s (t) •
θch –
c
0.1
0.1
θch – c
= 1.67°C/W,
Tc = 25°C
PW
P
D
=
DM
T
0.03
PW
T
0.01
0.05
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width
PW (S)
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance γ s (t)
Reverse Drain Current
I DR
(A)

Switching Time Test Circuit

Vin Monitor Vout Monitor D.U.T. R L V Vin DD 50 Ω = –30 V
Vin Monitor
Vout
Monitor
D.U.T.
R L
V
Vin
DD
50 Ω
=
–30 V
–10 V

Vin

Waveform

10% 90% 90% 90% 10% 10% Vout t d(on) t r t d(off) t f
10%
90%
90%
90%
10%
10%
Vout
t d(on)
t r
t d(off)
t f

2SJ221

Package Dimensions

JEITA Package Code RENESAS Code Package Name MASS[Typ.] Unit: mm SC-46 PRSS0004AC-A TO-220AB / TO-220ABV
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
Unit: mm
SC-46
PRSS0004AC-A
TO-220AB / TO-220ABV
1.8g
11.5 Max
10.16 ± 0.2
4.44
± 0.2
9.5
+0.1
φ 3.6
1.26
± 0.15
–0.08
8.0
2.7 Max
1.5 Max
0.76
± 0.1
0.5 ± 0.1
2.54 ± 0.5
2.54
± 0.5
± 0.57.8
± 0.5
2.79 ± 0.218.5
1.27
6.4 +0.2 –0.1
14.0 ± 0.5
15.0 ± 0.3

Ordering Information

Part Name

Quantity

Shipping Container

2SJ221-E

500 pcs

Box (Sack)

Note:

For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first

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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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