Beruflich Dokumente
Kultur Dokumente
M. B. Patil
mbpatil@ee.iitb.ac.in
www.ee.iitb.ac.in/~sequel
Gate
Source Drain
Gate
Source Drain
* A Field-Effect Transistor (FET) has a gate (G) terminal which controls the
current flow between the other two terminals, viz., source (S) and drain (D).
Gate
Source Drain
* A Field-Effect Transistor (FET) has a gate (G) terminal which controls the
current flow between the other two terminals, viz., source (S) and drain (D).
* In simple terms, a FET can be thought of as a resistance connected between S
and D, which is a function of the gate voltage VG .
Gate
Source Drain
* A Field-Effect Transistor (FET) has a gate (G) terminal which controls the
current flow between the other two terminals, viz., source (S) and drain (D).
* In simple terms, a FET can be thought of as a resistance connected between S
and D, which is a function of the gate voltage VG .
* The mechanism of gate control varies in different types of FETs, e.g., JFET,
MESFET, MOSFET, HEMT.
Gate
Source Drain
* A Field-Effect Transistor (FET) has a gate (G) terminal which controls the
current flow between the other two terminals, viz., source (S) and drain (D).
* In simple terms, a FET can be thought of as a resistance connected between S
and D, which is a function of the gate voltage VG .
* The mechanism of gate control varies in different types of FETs, e.g., JFET,
MESFET, MOSFET, HEMT.
* FETs can be used for analog and digital applications. In each case, the fact that
the gate is used to control current flow between S and D plays a crucial role.
p+
2a
n − Si
Gate
S D
G L
(Not drawn to scale. Typically, L ≫ 2a.)
Cross−sectional view
Source Drain
G
Z 2a p+
L′ n − Si
S D
3D view
G L
Simplified structure
p+
2a
n − Si
Gate
S D
G L
(Not drawn to scale. Typically, L ≫ 2a.)
Cross−sectional view
Source Drain
G
Z 2a p+
L′ n − Si
S D
3D view
G L
Simplified structure
* The n-type region between the top and bottom p + regions offers a resistance to
current flow. The resistance depends on VG .
p+
2a
n − Si
Gate
S D
G L
(Not drawn to scale. Typically, L ≫ 2a.)
Cross−sectional view
Source Drain
G
Z 2a p+
L′ n − Si
S D
3D view
G L
Simplified structure
* The n-type region between the top and bottom p + regions offers a resistance to
current flow. The resistance depends on VG .
* We will first consider the case, VD = VS = 0 V .
neutral
depleted G G G
p+
W
S
a h D S D S D
0V 0V 0V 0V 0V 0V
G L G G
VG = 0 V VG = −1 V VG = −2 V
neutral
depleted G G G
p+
W
S
a h D S D S D
0V 0V 0V 0V 0V 0V
G L G G
VG = 0 V VG = −1 V VG = −2 V
neutral
depleted G G G
p+
W
S
a h D S D S D
0V 0V 0V 0V 0V 0V
G L G G
VG = 0 V VG = −1 V VG = −2 V
neutral
depleted G G G
p+
W
S
a h D S D S D
0V 0V 0V 0V 0V 0V
G L G G
VG = 0 V VG = −1 V VG = −2 V
neutral
G
depleted p+
W
a
S h D
0V 0V
neutral
G
depleted p+
W
a
S h D
0V 0V
neutral
G
depleted p+
W
a
S h D
0V 0V
neutral
G
depleted p+
W
a
S h D
0V 0V
neutral
G
depleted p+
W
a
S h D
0V 0V
neutral
G
depleted p+
W
a
S h D
0V 0V
s
2 (Vbi − V ) q Nd a2
* For pinch-off, W = a = ⇒ VP = Vbi − .
q Nd 2
neutral
G
depleted p+
W
a
S h D
0V 0V
s
2 (Vbi − V ) q Nd a2
* For pinch-off, W = a = ⇒ VP = Vbi − .
q Nd 2
* Example: Nd = 2 × 1015 cm−3 , a = 1.5 µm, Vbi = 0.8 V .
neutral
G
depleted p+
W
a
S h D
0V 0V
s
2 (Vbi − V ) q Nd a2
* For pinch-off, W = a = ⇒ VP = Vbi − .
q Nd 2
* Example: Nd = 2 × 1015 cm−3 , a = 1.5 µm, Vbi = 0.8 V .
(1.6 × 10−19 Coul)(2 × 1015 cm−3 )((1.5 × 10−4 )2 cm2 )
W = 0.8 −
2 × 11.7 × 8.85 × 10−14 F /cm
= 0.8 − 3.48 ≈ −2.7 V .
neutral
G
depleted p+
W
a
S h D
0V 0V
s
2 (Vbi − V ) q Nd a2
* For pinch-off, W = a = ⇒ VP = Vbi − .
q Nd 2
* Example: Nd = 2 × 1015 cm−3 , a = 1.5 µm, Vbi = 0.8 V .
(1.6 × 10−19 Coul)(2 × 1015 cm−3 )((1.5 × 10−4 )2 cm2 )
W = 0.8 −
2 × 11.7 × 8.85 × 10−14 F /cm
= 0.8 − 3.48 ≈ −2.7 V .
⇒ If a gate voltage VG = −2.7 V is applied, the n-channel gets pinched off, and
the device resistance becomes very large.
neutral
depleted G G G
p+
W W
a h a
S D S D S h D
0V 0V 0V
G L G G
x VD = 0 V VD = 0.05 V VD = 1 V
V (x) 1V
0V
neutral
depleted G G G
p+
W W
a h a
S D S D S h D
0V 0V 0V
G L G G
x VD = 0 V VD = 0.05 V VD = 1 V
V (x) 1V
0V
neutral
depleted G G G
p+
W W
a h a
S D S D S h D
0V 0V 0V
G L G G
x VD = 0 V VD = 0.05 V VD = 1 V
V (x) 1V
0V
neutral
depleted G G G
p+
W W
a h a
S D S D S h D
0V 0V 0V
G L G G
x VD = 0 V VD = 0.05 V VD = 1 V
V (x) 1V
0V
neutral
depleted G G G
p+
W W
a h a
S D S D S h D
0V 0V 0V
G L G G
x VD = 0 V VD = 0.05 V VD = 1 V
V (x) 1V
0V
neutral
depleted G G G
p+
W W
a h a
S D S D S h D
0V 0V 0V
G L G G
x VD = 0 V VD = 0.05 V VD = 1 V
V (x) 1V
0V
y G
W Area = 2 h Z
S a h D
2h
0V x
Z
G
V VD
0V x
L
y G
W Area = 2 h Z
S a h D
2h
0V x
Z
G
V VD
0V x
L
Consider a slice of the device. The current density at any point in the neutral region is assumed to
be in the x direction, and given by,
dn dV
Jn = qµn nE + qDn ≈ qµn nE = qµn Nd ,
dx dx
y G
W Area = 2 h Z
S a h D
2h
0V x
Z
G
V VD
0V x
L
Consider a slice of the device. The current density at any point in the neutral region is assumed to
be in the x direction, and given by,
dn dV
Jn = qµn nE + qDn ≈ qµn nE = qµn Nd ,
dx dx
dn
where we have neglected the diffusion current, since n ≈ Nd ⇒ = 0.
dx
y G
W Area = 2 h Z
S a h D
2h
0V x
Z
G
V VD
0V x
L
Consider a slice of the device. The current density at any point in the neutral region is assumed to
be in the x direction, and given by,
dn dV
Jn = qµn nE + qDn ≈ qµn nE = qµn Nd ,
dx dx
dn
where we have neglected the diffusion current, since n ≈ Nd ⇒ = 0.
dx
Note that only the neutral part of the n-Si conducts since there are no carriers in the depletion
regions.
y G
W Area = 2 h Z
S a h D
2h
0V x
Z
G
V VD
0V x
L
Consider a slice of the device. The current density at any point in the neutral region is assumed to
be in the x direction, and given by,
dn dV
Jn = qµn nE + qDn ≈ qµn nE = qµn Nd ,
dx dx
dn
where we have neglected the diffusion current, since n ≈ Nd ⇒ = 0.
dx
Note that only the neutral part of the n-Si conducts since there are no carriers in the depletion
regions.
At a given x, the current ID is obtained by integrating Jn over the area of the neutral channel
region (see figure on the right). Since Jn is constant over this area,
y G
W Area = 2 h Z
S a h D
2h
0V x
Z
G
V VD
0V x
L
Consider a slice of the device. The current density at any point in the neutral region is assumed to
be in the x direction, and given by,
dn dV
Jn = qµn nE + qDn ≈ qµn nE = qµn Nd ,
dx dx
dn
where we have neglected the diffusion current, since n ≈ Nd ⇒ = 0.
dx
Note that only the neutral part of the n-Si conducts since there are no carriers in the depletion
regions.
At a given x, the current ID is obtained by integrating Jn over the area of the neutral channel
region (see figure on the right). Since Jn is constant over this area,
dV dV W
ZZ
ID (x) = Jn dx dz = 2hZ × qµn Nd = 2qZ µn Nd a 1− ,
dx dx a
where we have used h = a − W , i.e., h = a(1 − W /a).
W
S a h D
0V x
dV
W
G
ID (x) = 2 q Z µn Nd a 1− .
dx a
W
S a h D
0V x
dV
W
G
ID (x) = 2 q Z µn Nd a 1− .
dx a
Since ID (x) is constant from x = 0 to x = L, we get,
Z L Z V s !
D 2 q
ID dx = ID L = 2qZ µn Nd a 1− V bi − (V G − V ) dV ,
0 0 qNd a2
where we have used, for the depletion width W ,
s
2
W (x) = [Vbi − (VG − V )] .
qNd
W
S a h D
0V x
dV
W
G
ID (x) = 2 q Z µn Nd a 1− .
dx a
Since ID (x) is constant from x = 0 to x = L, we get,
Z L Z V s !
D 2 q
ID dx = ID L = 2qZ µn Nd a 1− V bi − (V G − V ) dV ,
0 0 qNd a2
where we have used, for the depletion width W ,
s
2
W (x) = [Vbi − (VG − V )] .
qNd
qNd a2
Evaluating the integral and using Vbi − VP = , we get (do this!)
2
( " 3/2 #)
2 VD + Vbi − VG Vbi − VG 3/2
ID = G0 VD − (Vbi − VP ) − ,
3 Vbi − VP Vbi − VP
where G0 = 2qZ µn Nd a/L.
W
S a h D
0V x
dV
W
G
ID (x) = 2 q Z µn Nd a 1− .
dx a
Since ID (x) is constant from x = 0 to x = L, we get,
Z L Z V s !
D 2 q
ID dx = ID L = 2qZ µn Nd a 1− V bi − (V G − V ) dV ,
0 0 qNd a2
where we have used, for the depletion width W ,
s
2
W (x) = [Vbi − (VG − V )] .
qNd
qNd a2
Evaluating the integral and using Vbi − VP = , we get (do this!)
2
( " 3/2 #)
2 VD + Vbi − VG Vbi − VG 3/2
ID = G0 VD − (Vbi − VP ) − ,
3 Vbi − VP Vbi − VP
where G0 = 2qZ µn Nd a/L.
Note that G0 is the channel conductance if there was no depletion, i.e., if h(x) = a throughout the
channel.
M. B. Patil, IIT Bombay
Special case: VD ≈ 0 V
neutral
y G depleted G
p+
W W
a a h
S h D S D
0V x 0V
G G L
VD ≈ 0 V
( " 3/2 3/2 #)
VD + Vbi − VG Vbi − VG
2
I D = G0 VD − (Vbi − VP ) −
3 Vbi − VP Vbi − VP
G G L
VD ≈ 0 V
( " #)
VD + Vbi − VG 3/2 Vbi − VG 3/2
2
I D = G0 VD − (Vbi − VP ) −
3 Vbi − VP Vbi − VP
2 −1/2 3 1/2
≈ G0 VD − (Vbi − VP ) VD (Vbi − VG ) (using Taylor’s series)
3 2
G G L
VD ≈ 0 V
( " #)
VD + Vbi − VG 3/2 Vbi − VG 3/2
2
I D = G0 VD − (Vbi − VP ) −
3 Vbi − VP Vbi − VP
2 −1/2 3 1/2
≈ G0 VD − (Vbi − VP ) VD (Vbi − VG ) (using Taylor’s series)
3 2
( 1/2 )
Vbi − VG
= G0 VD 1 − .
Vbi − VP
G G L
VD ≈ 0 V
( " #)
VD + Vbi − VG 3/2 Vbi − VG 3/2
2
I D = G0 VD − (Vbi − VP ) −
3 Vbi − VP Vbi − VP
2 −1/2 3 1/2
≈ G0 VD − (Vbi − VP ) VD (Vbi − VG ) (using Taylor’s series)
3 2
( 1/2 )
Vbi − VG
= G0 VD 1 − .
Vbi − VP
2 1/2 2 1/2
Since W = (Vbi − VG ) , and a = (Vbi − VP ) , we get
qNd qNd
G G L
VD ≈ 0 V
( " #)
VD + Vbi − VG 3/2 Vbi − VG 3/2
2
I D = G0 VD − (Vbi − VP ) −
3 Vbi − VP Vbi − VP
2 −1/2 3 1/2
≈ G0 VD − (Vbi − VP ) VD (Vbi − VG ) (using Taylor’s series)
3 2
( 1/2 )
Vbi − VG
= G0 VD 1 − .
Vbi − VP
2 1/2 2 1/2
Since W = (Vbi − VG ) , and a = (Vbi − VP ) , we get
qNd qNd
W
ID = G0 VD 1 − .
a
G G L
VD ≈ 0 V
( " #)
VD + Vbi − VG 3/2 Vbi − VG 3/2
2
I D = G0 VD − (Vbi − VP ) −
3 Vbi − VP Vbi − VP
2 −1/2 3 1/2
≈ G0 VD − (Vbi − VP ) VD (Vbi − VG ) (using Taylor’s series)
3 2
( 1/2 )
Vbi − VG
= G0 VD 1 − .
Vbi − VP
2 1/2 2 1/2
Since W = (Vbi − VG ) , and a = (Vbi − VP ) , we get
qNd qNd
W
ID = G0 VD 1 − .
a
This simply shows that the channel conductance reduces linearly with W (as seen before the
VS = VS = 0 V condition), and for VG = VP (i.e., W = a), the conductance becomes zero.
200
G VG =0 V
y
150
W
ID (µA)
S a h D
100
0V x
VG =−1 V
50
G
VG =−2 V
0
0 1 2 3 4 5
VD (Volts)
200
G VG =0 V
y
150
W
ID (µA)
S a h D
100
0V x
VG =−1 V
50
G
VG =−2 V
0
0 1 2 3 4 5
VD (Volts)
200
G VG =0 V
y
150
W
ID (µA)
S a h D
100
0V x
VG =−1 V
50
G
VG =−2 V
0
0 1 2 3 4 5
VD (Volts)
200
G VG =0 V
y
150
W
ID (µA)
S a h D
100
0V x
VG =−1 V
50
G
VG =−2 V
0
0 1 2 3 4 5
VD (Volts)
200
G VG =0 V
y
150
W
ID (µA)
S a h D
100
0V x
VG =−1 V
50
G
VG =−2 V
0
0 1 2 3 4 5
VD (Volts)
S D
0V pinch−off
200
G VG =0 V
y
150
W
ID (µA)
S a h D
100
0V x
VG =−1 V
50
G
VG =−2 V
0
0 1 2 3 4 5
VD (Volts)
S D
0V pinch−off
G
What happens if VD is increased further?
M. B. Patil, IIT Bombay
JFET: saturation
G G G G
S D S D S D S D
0V 0V 0V 0V
G G G G
A VD ≈ 0 V B VD < VDsat C VD = VDsat D VD > VDsat
ID D
C
A
VD
VDsat = VG − VP
G G G G
S D S D S D S D
0V 0V 0V 0V
G G G G
A VD ≈ 0 V B VD < VDsat C VD = VDsat D VD > VDsat
ID D
C
A
VD
VDsat = VG − VP
G G G G
S D S D S D S D
0V 0V 0V 0V
G G G G
A VD ≈ 0 V B VD < VDsat C VD = VDsat D VD > VDsat
ID D
C
A
VD
VDsat = VG − VP
G G G G
S D S D S D S D
0V 0V 0V 0V
G G G G
A VD ≈ 0 V B VD < VDsat C VD = VDsat D VD > VDsat
ID D
C
A
VD
VDsat = VG − VP
G G G G
S D S D S D S D
0V 0V 0V 0V
G G G G
A VD ≈ 0 V B VD < VDsat C VD = VDsat D VD > VDsat
ID D
C
A
VD
VDsat = VG − VP
An n-channel silicon JFET has the following parameters (at T = 300 K ): a = 1.5 µm, L = 5 µm,
Z = 50 µm, Nd = 2 × 1015 cm−3 , Vbi = 0.8 V , µn = 300 cm2 /V -sec.
(a) What is the pinch-off voltage?
(b) Write a program to generate ID -VD characteristics for VG = 0 V , −0.5 V , −1 V , −1.5 V ,
−2 V .
(c) For each of the above VG values, compute VDsat , and show it on the ID -VD plot. The part of
an ID -VD corresponding to VD < VDsat is called the “linear” region, and that corresponding
to VD > VDsat is called the “saturation” region.
An n-channel silicon JFET has the following parameters (at T = 300 K ): a = 1.5 µm, L = 5 µm,
Z = 50 µm, Nd = 2 × 1015 cm−3 , Vbi = 0.8 V , µn = 300 cm2 /V -sec.
(a) What is the pinch-off voltage?
(b) Write a program to generate ID -VD characteristics for VG = 0 V , −0.5 V , −1 V , −1.5 V ,
−2 V .
(c) For each of the above VG values, compute VDsat , and show it on the ID -VD plot. The part of
an ID -VD corresponding to VD < VDsat is called the “linear” region, and that corresponding
to VD > VDsat is called the “saturation” region.
Answer:
(a) VP = −2.68 V .
(b) linear saturation
200
VG =0 V
150
ID (µA)
−0.5 V
100
−1 V
50
−1.5 V
−2 V
0
0 1 2 3 4 5
VD (Volts)
G p+
2a S′ D′
n − Si
S D
S D RS RD
G
G L
(Not drawn to scale. Typically, L ≫ 2a.)
Cross−sectional view
G p+
2a S′ D′
n − Si
S D
S D RS RD
G
G L
(Not drawn to scale. Typically, L ≫ 2a.)
Cross−sectional view
In real JFETs, there is a separation between the source/drain contacts and the active channel.
The n-type semiconductor regions between the active channel and the source/drain contacts can
be modelled by resistances RS and RD .
VDD
R R
D
D G
Cgd
Vo
vg Cgs gd V1 V2
G gm vg
RG RG
S
S
VSS
Amplifier example
VDD
R R
D
D G
Cgd
Vo
vg Cgs gd V1 V2
G gm vg
RG RG
S
S
VSS
Amplifier example
VDD
R R
D
D G
Cgd
Vo
vg Cgs gd V1 V2
G gm vg
RG RG
S
S
VSS
Amplifier example
VDD
R R
D
D G
Cgd
Vo
vg Cgs gd V1 V2
G gm vg
RG RG
S
S
VSS
Amplifier example
VDD
R R
D
D G
Cgd
Vo
vg Cgs gd V1 V2
G gm vg
RG RG
S
S
VSS
Amplifier example
VDD
R R
D
D G
Cgd
Vo
vg Cgs gd V1 V2
G gm vg
RG RG
S
S
VSS
Amplifier example