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C. recombination.
2. Single-element semiconductors are characterized by
atoms with ____ valence electrons. D. equilibrium.
A. 3 Answer: Option B
B. forward-biased. D. anode
Answer: Option D
C. avalanched.
9. An n-type semiconductor material
D. saturated.
A. is intrinsic.
Answer: Option B
B. has trivalent impurity atoms added.
4. A diode conducts when it is forward-biased, and the C. has pentavalent impurity atoms added.
anode is connected to the ________ through a
limiting resistor. D. requires no doping.
A. positive supply Answer: Option C
Explanation:
B. negative supply N-type Semiconductor :
D. short, short
11. Which statement best describes an insulator? Answer: Option A
A. A material with many free electrons.
16. A reverse-biased diode has the ________
B. A material doped to have some free electrons. connected to the positive side of the source, and the
________ connected to the negative side of the
C. A material with few free electrons. source.
D. No description fits. A. cathode, anode
Answer: Option C B. cathode, base
C. base, anode
12. Effectively, how many valence electrons are there in
each atom within a silicon crystal? D. anode, cathode
A. 2 Answer: Option A
B. 4
17. What types of impurity atoms are added to increase
C. 8 the number of conduction-band electrons in intrinsic
silicon?
D. 16
A. bivalent
Answer: Option C
B. octavalent
13. The boundary between p-type material and n-type C. pentavalent
material is called
A. a diode. D. trivalent
B. reverse breakdown current. 26. What occurs when a conduction-band electron loses
energy and falls back into a hole in the valence
C. conventional current. band?
A. doping
D. reverse leakage current.
Answer: Option D B. recombination
C. generation
22. As the forward current through a silicon diode Answer: Option B
increases, the voltage across the diode
A. increases to a 0.7 V maximum.
27. The maximum number of electrons in each shell of
B. decreases. an atom is
A. 2.
C. is relatively constant.
B. 2n2 where n is the number of the shell.
D. decreases and then increases.
Answer: Option C C. 4.
D. 8.
23. Doping of a semiconductor material means Answer: Option B
that a glue-type substance is added to hold
A.
the material together.
28. A silicon diode is forward-biased. You measure the
that impurities are added to increase the voltage to ground from the anode at ________, and
B. the voltage from the cathode to ground at ________.
resistance of the material.
3. The Schottky diode is used
A. 0 V, 0.3 V
A. in high-power circuits.
B. 2.3 V, 1.6 V
B. in circuits requiring negative resistance.
C. 1.6 V, 2.3 V
C. in very fast-switching circuits.
D. 0.3 V, 0 V
D. in power supply rectifiers.
Answer: Option B
Explanation: Answer: Option C
For silicon diodes, the built-in potential is
approximately 0.7 V. Thus, if an external current is 4. You have an application for a diode to be used in a
passed through the diode, about 0.7 V will be tuning circuit. A type of diode to use might be
developed across the diode such that the P-doped
region is positive with respect to the N-doped region A. an LED.
and the diode is said to be "turned on" as it has a
B. a Schottky diode.
forward bias.
Therefore, 2.3 V - 1.6 V = 0.7 V. Hence the answer C. a Gunn diode.
is correct.
D. a varactor.
Answer: Option D
29. The term bias in electronics usually means
A. the value of ac voltage in the signal. 5. Refer to this figure. Which symbol is correct for an
LED?
B. the condition of current through a pn junction.
A. a
SPECIAL-PURPOSE DIODE
B. b
1. Schottky diodes are also known as
C. c
A. PIN diodes.
B. D. d
hot carrier diodes.
E. e
C. step-recovery diodes.
Answer: Option A
D. tunnel diodes.
Answer: Option B
6. Refer to this figure. If VIN increases, IZ will
B. zener
C. varactor
D. Schottky
Answer: Option B A. increase.
10. Refer to this figure. Identify the Schottky diode.
B. decrease.
B. tunnel A. a
C. pin B. b
D. Schottky C. c
Answer: Option D D. d
E. e
8. Refer to this figure. Which symbol is correct for a
zener diode? Answer: Option E
B. germanium.
C. gallium.
D. step-recovery
Answer: Option D
A. increase.
B. decrease.
C. remain the same.
Answer: Option A
none. The diode should be off if forward- A. remain the same, increase
C.
biased.
B. decrease, remain the same
D. the power supply voltage is too high.
Answer: Option A C. increase, remain the same
D. gallium phosphide.
16. Refer to this figure. Find the tunnel diode symbol. Answer: Option C
B. 125 mV.
A. a C. 8.325 V.
B. b D. 8.075 V.
Answer: Option C
C. c
E. A. laser
e
Answer: Option D B. tunnel
C. Schottky
17. Refer to this figure. If the load current increases,
IR will ________ and IZ will ________. D. step-recovery
Answer: Option C
E. e
26. Back-to-back varactor diodes are used for what
Answer: Option C reason?
A. over-voltage protection
22. What type of diode maintains a constant current?
B. a wider tuning range
A. LED
C. to eliminate harmonic distortion
B. zener
no reason; only zeners are used in a back-to-
C. current regulator D.
back configuration
D. pin Answer: Option C
23. What diode is used in seven-segment displays? B. in circuits requiring negative resistance.
A. zener C. in very fast-switching circuits.
B. LED D. in power supply rectifiers.
C. laser Answer: Option B
D. Schottky
28. What type of diode is commonly used in electronic
Answer: Option B
tuners in TVs?
A. varactor
24. Refer to this figure. If V IN decreases, IR will
B. Schottky
C. LED
D. Gunn
Answer: Option A
B. reverse, maximize
C. reverse, minimize
D. forward, minimize
Answer: Option B A. 0.05 mA
B. 2.085 mA
BIPOLAR JUNCTION TRANSISTORS
C. 1.065 mA
1. Refer to this figure. Determine the minimum value of
IB that will produce saturation. D. 7.4 mA
Answer: Option B
B. hFE
C. DC
Answer: Option D
D. negative, negative
2. A transistor amplifier has a voltage gain of 100. If Answer: Option C
the input voltage is 75 mV, the output voltage is:
A. 1.33 V
B. 7.5 V
C. 13.3 V
D. 15 V
Answer: Option B
6. Refer to this figure. The value of V BC is: 10. A certain transistor has IC = 15 mA and IB = 167
A; DC is:
A. 15
B. 167
C. 0.011
D. 90
Answer: Option D
A. 9.2 V
B. 9.9 V
C. –9.9 V
D. –9.2 V
Answer: Option D
17.
The value of DC
B. 0.7 V 18.
A transistor data sheet usually identifies DC as
C. 1.2 V A. hre.
D. 0.079 V B. hFE.
Answer: Option B C. I C.
D. VCE.
15. What are the two types of bipolar junction
transistors? Answer: Option B
Answer: Option A C. DC
20.
Refer to this figure. The value of DC = 100 and
VIN = 8 V. Determine IC(sat).
A. 92 k
B. 9.1 M
C. 100 k A. 18 mA
B. 7.92 mA A. 3.5 V
C. 1.8 mA B. 28.57 V
D. 8 A C. 4.375 mV
Answer: Option B D. 4.375 V
Answer: Option D
21. Which of the following is true for an npn or pnp
transistor?
26. What is (are) general-purpose/small-signal
A. IE = I B + IC transistors case type(s)?
B. I B = I C+ I E A. TO-18
C. IC = I B + IE B. TO-92
B. 0.7 < VCE < VCE(max) 28. The dc load line on a family of collector
characteristic curves of a transistor shows the
C. VCE(max) > VCE
A. saturation region.
D. none of the above
B. cutoff region.
Answer: Option B
C. active region.
24. The magnitude of dark current in a phototransistor D. all of the above
usually falls in what range?
Answer: Option D
A. mA
C. Ohmmeter (VOM)
Answer: Option D
D. 9.4 V C. Power
Answer: Option A
D. All of the above
Answer: Option B
C. Exceeding 100 k , exceeding 100 k
B. Base
8. Calculate minority current ICO if IC = 20.002 mA and
IC majority = 20 mA.
C. Collector
A. 20 A
Answer: Option D
B. Off
Answer: Option D
C. 50
Answer: Option C
18.
C. Common-collector
Answer: Option D
C. Bad ohmmeter C. 50
16. 19. Which of the following can be obtained from the last
Determine the value of when = 100. scale factor of a curve tracer?
A. 1.01 A. hFE
B. 101 B. dc
C. 0.99
C. ac
B. 3
C. 4
D. 5
Answer: Option B
B. 50 k –1 M , 10 –100
C. 10 –100 k , 50 –1 k
Answer: Option A
B. 180 B. Common-collector
C. 220 C. Common-emitter
21. 25.
dc = ________ dc for this set of collector characteristics is within
A. IB / IE ________ percent of ac.
B. IC / I E
C. IC / I B
Answer: Option C
B. 2 C. 7
C. 0 D. 10
D. Answer: Option D
3
26. Which of the following regions is (are) part of the 30. For a properly biased pnp transistor, let IC = 10 mA
output characteristics of a transistor? and IE = 10.2 mA. What is the level of I B?
A. Active A. 0.2 A
B. Cutoff B. 200 mA
C. Saturation C. 200 A
27. How many individual pnp silicon transistors can be 31. What is (are) the component(s) of most specification
housed in a 14-pin plastic dual-in-line package? sheets provided by the manufacturer?
A. 4 A. Maximum ratings
B. 7 B. Thermal characteristics
C. 10 C. Electrical characteristics
B. 1940s
B. IC / IE
C. 1950s
C. IC / IB
D. 1960s
D. None of the above
Answer: Option B
Answer: Option C
B. B. pnp, npn
thermal characteristics
D. D. nnp, pnp
All of the above
Answer: Option B
Answer: Option D
34. What is the ratio of the total width to that of the
D. None of the above
center layer for a transistor?
A. 1:15 Answer: Option C
D. 150:1 B. hfb
Answer: Option D
C. hrb
C. Minority
Answer: Option C
BJT AMPLIFIERS
1. The current gain for the Darlington connection is
________.
A.
B.
C. A. 2 mA
D. B. 4 mA
Answer: Option B C. 5 mA
C. Emitter-follower A. hi
B. hr
8. For a common-emitter amplifier, the purpose of
C. hf swamping is
A. to minimize gain.
D. ho
B. to reduce the effects of r'e
Answer: Option B
C. to maximize gain.
6. Which of the following conditions must be met to
allow the use of the approximate approach in a
D. no purpose.
voltage-divider bias configuration?
A. re > 10R2 Answer: Option B
B. rc′
C. re′
Answer: Option C
B. 5 C. common-collector amplifier.
Answer: Option C
D. 595
Answer: Option B
12. The ________ model fails to account for the output
D. emitter-follower
impedance level of the device and the feedback
effect from output to input.
Answer: Option C
A. hybrid equivalent
D. –100
13. Refer to this figure. Calculate the value of V B.
Answer: Option A
Answer: Option B
C. 20 V B. 1k to 5 k
D. 3V C. 100 k to 500 k
Answer: Option B D. 1M to 2 M
14. You have a need to apply an amplifier with a very Answer: Option A
high power gain. Which of the following would you
choose?
18. The advantage that a Sziklai pair has over a
A. common-collector Darlington pair is
A. higher current gain.
B. common-base
B. less input voltage is needed to turn it on.
C. common-emitter
C. higher input impedance. B. 3.77 k
Answer: Option B
D. 2.25 k
19. What is the typical range of the output impedance of Answer: Option B
a common-emitter configuration?
A. 10 to 100
22. What is the range of the current gain for BJT
transistor amplifiers?
B. 1k to 5 k A. less than 1
C. 40 k to 50 k B. 1 to 100
Answer: Option C
C. Gain is larger than 1.
Answer: Option A
B. 45º
C. 90º
D. 180º
Answer: Option D
A. 37.7 k
25. Which one of the following configurations has the
D. high, high
lowest input impedance?
A. Fixed-bias Answer: Option C
C. high, low
B. voltage-divider bias
35. Refer to this figure. Determine the value of V C.
C. emitter-follower
D. collector feedback
Answer: Option C
A. 20 V
B. 10 V
A. an open C3.
C. 5V
B. an open C2.
D. 0V
C. an open base-emitter of Q2.
Answer: Option C
D. a shorted C2.
36. In a common-base amplifier, the input signal is
Answer: Option B connected to the
A. base.
34. When the bypass capacitor is removed from a
common-emitter amplifier, the voltage gain B. collector.
A. increases.
C. emitter.
B. decreases.
D. output.
C. has very little effect.
Answer: Option C
Answer: Option B
Answer: Option B
Answer: Option A
B. Av
C. Ap
D. None of the above C. re
Answer: Option A
D. Ib
44. The dc emitter current of a transistor is 8 mA. What D. All of the above
is the value of re?
A. 320 Answer: Option D
D. 5.75
B. 45º
Answer: Option C
C. 90º
Answer: Option A
46. In an unbypassed emitter bias configuration
hie replaces ________ in the re model.
A. re 50. The total gain of a multistage amplifier is the
________.
A. sum of individual voltage gains
B.
B. sum of dB voltage gains B. to reduce noise.
Answer: Option B
C. to despike the supply voltage.
51. Which of the following configurations has an output D. to maximize amplifier gain.
impedance Zo equal to RC?
A. Fixed-bias common-emitter Answer: Option D
Common-emitter voltage-divider with bypass 54. For BJT amplifiers, the ________ gain typically
B.
capacitor ranges from a level just less than 1 to a level that
may exceed 1000.
Common-emitter voltage-divider without A. voltage
C.
bypass capacitor
B. current
D. All of the above
C. impedance
Answer: Option D
B. False
Answer: Option B
C. 940
Common-emitter voltage-divider without
D.
bypass capacitor
D. 100.8
Answer: Option C
Answer: Option B
57. An emitter-follower amplifier has an input impedance
53. For a common-emitter amplifier, the purpose of the of 107 k . The input signal is 12 mV. The
emitter bypass capacitor is approximate output voltage is (common-collector)
A. no purpose, since it is shorted out by RE. A. 8.92 V
60. What is the limit of the efficiency defined by = P o /
B. 112 mV
P i?
A. Greater than 1
C. 12 mV
B. Less than 1
D. 8.9 mV
58. Which of the following is (are) true regarding the D. None of the above
output impedance for frequencies in the midrange
100 kHz of a BJT transistor amplifier? Answer: Option B
A. The output impedance is purely resistive.
61. What is re equal to in terms of h parameters?
It varies from a few ohms to more than 2 M A. hre / hoe
B.
.
B. (hre + 1) / hoe
An ohmmeter cannot be used to measure the
C.
small-signal ac output impedance. C. hie – (hre / hoe)(1 + hfe)
Answer: Option D
E. none of the above
59. Refer to this figure. The output signal from the first Answer: Option A
stage of this amplifier is 0 V. The trouble could be
caused by
62. What is the controlling current in a common-base
configuration?
A. Ie
B. Ic
C. Ib
Answer: Option A
A. an open C4. 63. Which of the following techniques can be used in the
sinusoidal ac analysis of transistor networks?
B. an open C2. A. Small-signal
Answer: Option C
D. None of the above
Answer: Option C
C. 398
64. The input impedance of a BJT amplifier is purely
________ in nature and can vary from a few D. 600
________ to ________.
A. resistive, ohms, megohms Answer: Option D
B. capacitive, microfarads, farads 67. A Darlington pair provides beta ________ for
________ input resistance.
C. inductive, millihenrys, henrys A. multiplication, decreased
Answer: Option A
C. division, decreased
B. smaller, larger
B. low input impedance and low voltage gain.
C. larger, smaller
a voltage gain of about 1 and a low input
C.
impedance.
D. larger, larger
a low voltage gain and a high input
Answer: Option C D.
impedance.
FET DEVICES
1. Which of the following ratings appear(s) in the
specification sheet for an FET?
A. Voltages between specific terminals
B. Current levels
C. Power dissipation
Answer: Option D
C. Negative value
D. Undefined
Answer: Option A
4. What is the range of an FET's input impedance? 7. At which of the following condition(s) is the depletion
A. region uniform?
10 to 1 k
A. No bias
B. 1k to 10 k
B. VDS > 0 V
C. 50 k to 100 k
C. VDS = VP
D. 1M to several hundred M
D. None of the above
Answer: Option D
Answer: Option A
Answer: Option D
9. Referring to this transfer curve, determine I D at
VGS = 2 V.
6. Refer to this portion of a specification sheet.
Determine the values of reverse-gate-source voltage
and gate current if the FET was forced to accept it.
12. The BJT is a ________ device. The FET is a
________ device.
A. bipolar, bipolar
B. bipolar, unipolar
C. unipolar, bipolar
D. unipolar, unipolar
Answer: Option B
B. 1.333 mA
C. 0.111 mA
D. 4.444 mA
Answer: Option A
B. VDS
C. IG
D. VDG
A. 2.54 V
Answer: Option A
B. –2.54 V
11. It is the insulating layer of ________ in the MOSFET
construction that accounts for the very desirable C. –12 V
high input impedance of the device.
A. SiO D. Undefined
Answer: Option B
B. depletion-type MOSFET
C. enhancement-type MOSFET
D. BJT
Answer: Option C
B. –1.66 V
C. 0.66 V
D. –0.66 V
Answer: Option A
Answer: Option C
B. Gate
C. Source
Answer: Option D
B. 4.167 mA
B. voltage, current
C. 6.167 mA
C. current, voltage
D. 0.616 mA
D. current, current
Answer: Option B
Answer: Option C
B. JFET B. 3
C. MOSFET C. 4
Answer: Option D
No direct electrical connection between the
A.
25. Refer to the following figure. Calculate V GS at ID = 8 gate terminal and the channel
mA for k = 0.278 × 10 –2 A/V2.
B. Desirable high input impedance
28.
Uses metal for the gate, drain, and source
C.
connections
Answer: Option D
A. 3.70 V
29. At which of the following is the level of V DS equal to
the pinch-off voltage?
B. 5.36 V
A. When ID becomes equal to IDSS
C. 7.36 V
B. When VGS is zero volts
D. 2.36 V
C. IG is zero
Answer: Option A
D. All of the above
26. The level of VGS that results in ID = 0 mA is defined
Answer: Option D
by VGS = ________.
A. VGS(off)
30. Which of the following represent(s) the cutoff region
for an FET?
B. VP
A. ID = 0 mA
C. VDS
B. VGS = VP
C. MOSFET enhancement-type
B. Higher current and power ratings
FET AMPLIFIERS
33. Which of the following input impedances is not valid
for a JFET? 1. A common-gate amplifier is similar in configuration
to which BJT amplifier?
A. 1010
A. common-emitter
B. 109
B. common-collector
C. 108
C. common-base
D. 1011 D. emitter-follower
Answer: Option C
Answer: Option C
B. 85%.
C. 90%.
D. 100%.
Answer: Option D
C. 11.378
C. common-emitter
D. 11.378 k
D. emitter-follower
Answer: Option D
Answer: Option C
4. Refer to this figure. If R6 opened, the signal at the
A. current
drain of Q1 would
6.
B. voltage
Answer: Option A
A. increase.
B. decrease.
D. distort.
Answer: Option C
A. –2.85
C. –2.95
D. –3.21
Answer: Option C
B. common-collector
C. common-base
A. 20 V
D. common-gate
B. 11 V
Answer: Option B
C. 10 V
Referring to this figure, calculate A v for yos = 58 S.
D. 9V
Answer: Option D
Answer: Option A
A. 2 mS
B. 3 mS
C. 4 mS
A. –7.29
D. 5 mS
C. 0.5 IDSS
0. Refer to this figure. If V in = 1 V p-p, the output voltage
Vout would be
D. IDSS
Answer: Option B
A. undistorted.
B. 88 mV p-p
C. 48 mV p-p
D. 24 mV p-p
Answer: Option A
A. 2.2 k
B. 2.42 k
C. 2.62 k
D. 2.82 k
Answer: Option D
B. BJTs
C. MOSFETs
Answer: Option C
18. What is (are) the function(s) of the coupling
capacitors C1 and C2 in an FET circuit?
A. to create an open circuit for dc analysis
B.
C. 1 / gm
Answer: Option C
B. 1.92 k
B. 90
C. 180 C. 2.05 k
22. Refer to this figure. If C4 opened, the signal voltage 24. Which of the following is a required condition to
at the drain of Q1 would simplify the equations for Zo and Av for the self-bias
configuration?
A. rd 10RD A. inverters
B. rd = RD B. NOR gates
25. The steeper the slope of the ID versus VGS curve, the 30. Referring to the transfer characteristics shown
________ the level of g m. below, calculate gm at VGSQ = –1 V.
A. less
B. same
C. greater
Answer: Option C
B. 1M
C. 10 M
A. 2 mS
D. 1000 M
B. 3 mS
Answer: Option D
C. 4 mS
27. MOSFETs make better power switches than BJTs
because they have D. 5 mS
A. lower turn-off times.
Answer: Option B
Answer: Option D
A. increase.
B. decrease.
D. distort.
Answer: Option B
B. 7.5 mA.
C. 5 mA.
D. 2.5 mA.
Answer: Option C
A. 10.8 V
B. of their very low input capacitance.
B. 6V
C. of their high-frequency response capabilities.
C. –0.7 V
40. Referring to this figure, calculate Zo if rd = 19 k .
D. –6 V
Answer: Option D
B. common-drain
C. common-source
B. 1.81 k
38. What common factor determines the voltage gain
and input resistance of a common-gate amplifier?
C. 1.92 k
A. RD
B. D. 2.00 k
RL
Answer: Option B
C. gm
A. 100 k A. 2.42 M
B. 80 k B. 2.50 M
C. 25 k C. 2.53 M
D. 5k D. 2.59 M
B. C. 420.5
C. RG D. 480.9
D. Answer: Option D
Answer: Option B 45. The more horizontal the characteristic curves on the
drain characteristics, the ________ the output
impedance.
43. Referring to this figure, obtain g m for ID = 6 mA.
A. less
B. same
C. greater
Answer: Option C
B. 3.00 mS
C. 3.25 mS
D. 3.46 mS
Answer: Option D
A. 990 mV
B. 1.13 V p-p
C. 2.8 V p-p
D. 990 V p-p
Answer: Option C
47. Refer to this figure. The approximate value of Rin is
B. decrease.
D. distort.
Answer: Option D
C. 3.3 k .
51. Determine the value for RD if the ac gain is 8.
D. 48 M .
Answer: Option A
D. 2.08 k
Answer: Option B
A. increase.
n-channel and p-channel E-MOSFETs in
D.
parallel.
Answer: Option C
B. 100 S to 1000 S
C. 1000 S to 5000 S
D. 10000 S to 100000 S
Answer: Option C
A. 300.2
B. VGS(th)
D. All of the above
Answer: Option A
D. 100 k
B. 2 common-source amplifiers.
Answer: Option B
B. using a dc meter
Answer: Option D
A. 2.2 k
64. The E-MOSFET is quite popular in ________
applications.
B. 1.2 k A. digital circuitry
B. high-frequency A. 2.92 k
C. buffering B. 3.20 k
Answer: Option D
D. 3.75 k
Answer: Option A
B. –3.56
C. –3.62
D. –4.02
Answer: Option C
A. 1.2.
B. 2.4.
C. 4.4.
D. 8.8.
Answer: Option D
69. Refer to this figure. If ID = 4 mA, IDSS = 16 mA, and
VGS(off) = –8 V, find VDS.
2. What is the ratio of the capacitive reactance X CS to
the input resistance RI of the input RC circuit of a
single-stage BJT amplifier at the low-frequency
cutoff?
A. 0.25
B. 0.50
C. 0.75
D. 1.0
Answer: Option D
B. –6 V A. Low-frequency
C. 10.8 V B. Mid-frequency
D. 30 V C. High-frequency
A. 1
C. 0.5
Answer: Option B
B. 10
C. 5
D. 20 A. 15.8 Hz
Answer: Option A
B. 46.13 Hz B.
C. 238.73 Hz C. 1
D. 1575.8 Hz D. 2
5. The smaller capacitive elements of the design will 9. An amplifier rated at 30-W output is connected to a
determine the ________ cutoff frequencies.
5- speaker. Calculate the input power required for
A. low full power output if the power gain is 20 dB.
A. 3 mW
B. mid
B. 30 mW
C. high
C. 300 mW
Answer: Option C
D. 3W
6.
What is the range of the capacitor Cds? Answer: Option C
A. 0.01 to 0.1 pF
10. The larger capacitive elements of the design will
B. 0.1 to 1 pF determine the ________ cutoff frequency.
A. low
C. 0.1 to 1 nF
B. mid
D. 0.1 to 1 F
C. high
Answer: Option B
Answer: Option A
7. An amplifier rated at 30-W output is connected to a
5- speaker. Calculate the input voltage for the 11. Which of the following elements is (are) important in
rated output if the amplifier voltage gain is 20 dB. determining the gain of the system in the high-
A. 1.225 mV frequency region?
A. Interelectrode capacitances
B. 12.25 mV
B. Wiring capacitances
C. 122.5 mV
C. Miller effect capacitance
D. 1.225 V
D. All of the above
Answer: Option D
Answer: Option D
8. A 3-dB drop in hfe will occur at a frequency defined
by ________. 12. The input power to a device is 10,000 W at 1000 V.
A. The output power is 500 W, and the output
impedance is 100 . Find the voltage gain in
decibels.
A. –30.01 dB A. RB = 0
B. –20.0 dB B. RC = 0
C. –13.01 dB C. RE = 0
Answer: Option C
17. In the input RC circuit of a single-stage BJT, by how
much does the base voltage lead the input voltage
13. By what factor does an audio level change if the at the cutoff frequency in the low-frequency region?
power level changes from 4 W to 4096 W? A. About 0º
A. 2
B. 45º
B. 4
C. About 90º
C. 6
D. None of the above
D. 8
Answer: Option B
Answer: Option C
18. What is the normalized gain expressed in dB for the
14. For audio systems, the reference level is generally cutoff frequencies?
accepted as ________. A. –3 dB
A. 1 mW
B. +3 dB
B. 1W
C. –6 dB
C. 10 mW
D. –20 dB
D. 100 mW
Answer: Option A
Answer: Option A
19. Which of the low-frequency cutoffs determined by
15. What is the range of the capacitors Cgs and Cgd? CS, CC, or CE will be the predominant factor in
determining the low-frequency response for the
A. 1 to 10 pF complete system?
A. lowest
B. 1 to 10 nF
B. middle
C. 1 to 10 F
C. highest
D. 1 to 10 F
D. None of the above
Answer: Option A
Answer: Option C
16. For the low-frequency response of a BJT amplifier,
the maximum gain is where ________ .
Determine the break frequency for this circuit.
20.
C. 3162.38
D. 31623.8
Answer: Option B
B. 159.15 Hz
B. Break frequency
C. 31.85 Hz
C. Half-power frequency
D. 318.5 Hz
D. All of the above
Answer: Option B
Answer: Option D
C. 2.3 B. mid
D. 3.2 C. high
22. Which of the following configurations does (do) not 26. logea = ________ log10a
involve the Miller effect capacitance? A. 2.3
A. Common-emitter
B. 2.718
B. Common-base
C. e
C. Common-collector
D. 1.414
D. All of the above
Answer: Option A
Answer: Option B
B. 0.50
32. In the input RC circuit of a single-stage BJT, by how
much does the base voltage lead the input voltage
C. 0.707 for frequencies much larger than the cutoff
frequency in the low-frequency region?
D. 1 A. About 0º
B. 10
34. What is the ratio of the output power to the input
power at the cutoff frequencies in a normalized
C. 5 frequency response plot?
A. 0.25
D. 20
B. 0.50
Answer: Option B
C. 0.707
31. Which of the following capacitors is (are) included in
Ci for the high-frequency region of a BJT or FET
amplifier? D. 1
Answer: Option B 4. Refer to the given figure. This circuit is known as
C. an integrator.
2. Refer to the given figure. This circuit is known as
D. a summing amplifier.
Answer: Option B
A. a noninverting amplifier.
B. a differentiator.
C. an integrator.
D. a summing amplifier.
A. a square wave.
Answer: Option C
B. a triangle wave.
3. The output of a Schmitt trigger is a
A. pulse waveform. C. a sine wave.
Answer: Option B
C. sinusoidal waveform.
Answer: Option A
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A. 2V
B. –2 V
C. +Vsat A. V(out)max
D. –Vsat B. –V(out)max
C. 10 V. A. integrator
D. 15 V. B. differentiator
B. a fast response.
11. Refer to the given figure. If V in = 5 V, the rate of
change of the output voltage in response to a single
C. a slow response. pulse input is:
Answer: Option A
A. 15.2 mV/ s
B. 1.52 V/ s
C. 1.52 mV/ s
D. 15.2 V/ s
Answer: Option C
A. 1V
B. thermostat.
13. What circuit produces an output that approximates
the area under the curve of an input function?
A. integrator C. alarm clock.
Answer: Option B
C. summing amplifier
B. –13 V D. hysteresis.
Answer: Option D
C. 13 Vp-p
Answer: Option D
Answer: Option B
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A. 7V
B. –7 V
C. +Vsat
D. –Vsat A. 0.5 V
Answer: Option C
B. –0.5 V
D. –2 V
Answer: Option B
B. nonzero-level detector
Answer: Option B
C. 0.35 V
Answer: Option C
26. ________ is a mathematical process for determining 30. Which of the following are variations of the basic
the rate of change of a function. summing amplifier?
A. Integration A. averaging amplifier
D. Answer: Option C
Comparatoring
B. An open diode
B. 2
C. A shorted diode
C. 3
D. A defective ohmmeter
D. 4
Answer: Option B
Answer: Option B
B. conversion
B. nA
Answer: Option B
C. A
A. 4
C. Mid frequency
B. 3
D. Very high frequency
C. 5 Answer: Option D
D. 0
15. Which of the following devices can check the
condition of a semiconductor diode?
Answer: Option C
A. Digital display meter (DDM)
A. Yellow
C. Curve tracer
B. White
D. All of the above
C. Orange Answer: Option D
13. What is the range of the operating voltage level for 17. The condition of a semiconductor diode can be
LEDs? determined quickly using a ________.
A. 5–12 mV A. DDM
B. 1.7–3.3 V B. VOM
18. How many valence electrons does a silicon atom Answer: Option A
have?
A. 1 22. In which of the following is the light intensity
measured?
B. 2 A. Candela
C. 3 B. Efficacy
D. 4 C. Flux
Answer: Option D
D. Illumination
19. What is the resistor value of an ideal diode in the Answer: Option A
region of conduction?
A. 0 23. Calculate ID if RD = 30 and VD = 0.84 V.
A. 28 mA
B. 5k
B. 0.028 mA
C. Undefined
C. 2.8 A
D. Infinity
D. 280 A
Answer: Option A
Answer: Option A
20. Calculate the power dissipation of a diode having
ID = 40 mA.
24. Which of the following elements is most frequently
A. 28 mW used for doping pure Ge or Si?
A. Boron
B. 28 W
B. Gallium
C. 280 mW
C. Indium
D. Undefined
Answer: Option D
21. Calculate static resistance RD of a diode having ID =
30 mA and VD = 0.75 V.
A. 25
25. Calculate the temperature coefficient in %/° C of a
10-V nominal Zener diode at 25° C if the nominal
B. 40 voltage is 10.2 V at 100° C.
A. 0.0238
C. 0.04
B. 0.0251
C. 0.0267 B. simplified
D. 0.0321 C. piecewise-linear
26. In general, LEDs operate at voltage levels from 30. What is the value of the transition capacitance for a
________ V to ________ V. silicon diode when VD = 0? (Choose the best
answer.)
A. 1.0, 3.0
A. 1 pF
B. 1.7, 3.3
B. 3 pF
C. 0.5, 4.0
C. 5 pF
D. None of the above
D. 10 pF
Answer: Option B
Answer: Option B
Answer: Option B
28. What is the maximum power rating for LEDs?
A. 150 mW
32. The ideal diode is a(n) ________ circuit in the region
of nonconduction.
B. 500 mW
A. open
C. 1W
B. short
D. 10 W Answer: Option A
Answer: Option A
33. Which capacitance dominates in the forward-bias
region?
29. The ________ diode model is employed most A. Diffusion
frequently in the analysis of electronic systems.
A. ideal device
B. Transition
C. Depletion D. None of the above
Answer: Option B
D. None of the above
Answer: Option A 3. What type of diode circuit is used to clip off portions
of signal voltages above or below certain levels?
34. In what state is a silicon diode if the voltage drop A. clipper or limiter
across it is about 0.7 V?
A. No bias B. clamper
Answer: Option A
D. Zener region
D. reverse, 90º
B. 25 ms
Answer: Option C
C. 2.5 ms
A. –10 V
B. –20 V
C. 10 V
A. VZ
D. 20 V
B. IZM
Answer: Option B
C. IZ
6. The output frequency of a full-wave rectifier is 9.
________ the input frequency.
A. one-half
B. equal to
C. twice
A. 25 V
D. one-quarter
B. 15 V
Answer: Option C
C. –25 V
7. PIV is which of the following?
A. peak input voltage D. –15 V
Answer: Option B
B. peak inverse voltage
C. peak immediate voltage 10. In a regulated supply, what term describes how
much change occurs in the output voltage for a
given change in the input voltage?
D. positive input voltage A. load regulation
Answer: Option B
B. voltage regulator
D. ripple voltage
Answer: Option C
A. 2.325 mA
B. 0V
B. 5 mA
C. 1V
C. 1.25 mA
D.
D. 0 mA Answer: Option B
Answer: Option A
12. Determine the peak for both half cycles of the output
waveform.
Determine the peak value of the output waveform.
B. clamper
C. IC voltage regulator
Answer: Option B
A. 16 V, –4 V
16. Determine ID2.
B. 16 V, 4 V
C. –16 V, 4 V
D. –16 V, –4 V
Answer: Option A
A. Vm
B. 0.7 mA
B. 2Vm
C. 3.393 mA
C. 0.5Vm
D. 3.571 mA
Answer: Option B
17. What is the logic function of this circuit?
14. What is the VRRM (PIV rating) for the 1N4001 rectifier
diode?
A. 50 V
B. 100 V
C. 200 V
D. 400 V
Answer: Option A
Answer: Option D
D. Clamper
19. Determine the average value of the current through Answer: Option A
the load resistor.
B. Vp(out) + 0.7 V
C. 2Vp(out) – 0.7 V
Answer: Option D
B. 0 mA
D. 1.479 mA
Answer: Option D
A. 29.40 mA
B. 30.30 mA
C. 14.70 mA
D. None of the above D. 120 Hz
23. Determine the current level if E = 15 V and R = 3 k 26. How many terminals do the 7800 series fixed
. positive voltage regulators have?
A. 2
B. 3
C. 4
A. 0A
D. 5
B. 4.76 mA
C. 1A
D.
Answer: Option B
A. 3.201 V
28. Determine ID1.
B. 0V
C. 4.3 V
D. 1.371 V
Answer: Option D A. 0 mA
B. 60 Hz D. 14.09 mA
Answer: Option A
C. 100 Hz
29. Refer to the figure given below. Which diode
D. Clamper
arrangement will supply a negative output voltage?
Answer: Option C
A. RL = 5 k
A. a B. RL = 5.5 k
B. b C. RL = 6 k
D. d Answer: Option B
Answer: Option C
33. Use the information provided here to determine the
value of IDQ.
30. A silicon diode in a half-wave rectifier has a barrier
potential of 0.7 V. This has the effect of
A. reducing the peak output voltage by 0.7 V.
D. no effect.
Answer: Option A
A. 0 mA
31. What best describes the circuit?
B. 4.3 mA
C. 5 mA
D. 10 mA
A. Full-wave rectifier
Answer: Option B
B. Half-wave rectifier
34. If the ac supply is 60 Hz, what will be the ripple
frequency out of the half-wave rectifier?
C. Clipper
A. 30 Hz
B. 50 Hz
C. 60 Hz
E. no trouble exists.
Answer: Option D
B. decreasing, increasing
B. Ge
C. increasing, decreasing
C. Both Si and Ge
D. increasing, increasing
D. Neither Si nor Ge
Answer: Option D
Answer: Option C
A. 0 mA
B. 1.893 mA
C. 2.036 mA
A. 9.3 V
D. 2.143 mA
B. 10 V
Answer: Option B
C. –10 V
44. What best describes the circuit?
D. 0V
Answer: Option B
B. on Answer: Option A
B. Parallel
48. A silicon diode has a voltage to ground of –117 V B. Positive logic OR gate
from the anode. The voltage to ground from the
cathode is –117.7 V. The diode is
C. Negative logic AND gate
A. open.
Answer: Option C
A. 4.65 mA
B. 9.3 mA
A. a
C. 18.6 mA
B. b
D. 0.7 mA
C. c Answer: Option A
D. d
52. Refer to the figure given below. If the voltmeter
across the transformer reads 0 V, the probable
Answer: Option A trouble, if any, would be
B. Undefined
C. Equal to IRL
D. IZM
E. no trouble exists.
C. IZM
Answer: Option C
D. None of the above
Answer: Option A
Answer: Option A
2. Which transistor bias circuit arrangement provides
good stability using negative feedback from collector
54. With this Zener diode in its "on state," what is the to base?
level of IZ for the maximum load resistance? A. base bias
B. collector-feedback bias
C. voltage-divider bias
D. emitter bias
A. 0 mA Answer: Option B
3. Refer to the given figure. The most probable cause of
C. a short from collector to emitter.
trouble, if any, from these voltage measurements is
D. no problems.
Answer: Option D
B. DC·( )
C. DC·re′
D. DCRE
Answer: Option D
A. the base-emitter junction is open.
D. emitter bias
4. Refer to the given figure. The most probable cause
of trouble, if any, from these voltage measurements Answer: Option C
is
B. RE is open.
10. Refer to this figure. The value of I B is
A. 53 A.
A. saturated. B. 50 A.
B. cutoff. C. 50 mA.
C. nonconducting. D. 53 mA.
8. Ideally, for linear operation, a transistor should be 11. What is the Q-point for a fixed-bias transistor with
biased so that the Q-point is IB = 75 A, DC = 100, VCC = 20 V, and RC = 1.5 k
A. near saturation. ?
A. VC = 0 V
B. near cutoff.
B. VC = 20 V
C. where IC is maximum.
C. VC = 8.75 V
D. halfway between cutoff and saturation.
D. VC = 11.25 V
Answer: Option D
Answer: Option C
9. The most stable biasing technique used is the
A. voltage-divider bias. 12. Emitter bias requires
A. only a positive supply voltage.
B. base bias.
B. only a negative supply voltage.
C. emitter bias.
C. no supply voltage.
D. collector bias.
D. both positive and negative supply voltages.
Answer: Option A
Answer: Option D
13.
Refer to this figure. The value of DC is D. 2.5 V
Answer: Option D
A. 5.3.
B. 53.
C. 94.
D. 100.
14. Refer to this figure. Assume that I C IE. Find VE. B. cutoff.
C. nonconducting.
Answer: Option C
A. base bias
B. collector-feedback bias
C. voltage-divider bias
D. emitter bias
Answer: Option A
A. 5V
C. 15 V
B. collector
19. Refer to this figure. Determine IC.
C. emitter
D. voltage-divider
Answer: Option D
A. 5 A
B. 5 mA
C. 0 mA
Answer: Option B
B. VCC, IC(sat)
C. zero, I(sat)
D. VCC, zero
Answer: Option C
B. collector-feedback bias.
Answer: Option B
only if the base current is much larger than
D. the current through R2 (the lower bias
22. Refer to this figure. Assume IC IE. Determine the resistor).
value of RC that will allow VCE to equal 10 V.
Answer: Option B
A. 10 A.
A. 1k
B. 10 mA.
B. 1.5 k
C. 5 mA.
C. 2k
D. 50 mA.
D. 2.5 k
Answer: Option C
Answer: Option B
B. collector-feedback bias
B. saturation, cutoff
D. emitter bias
24. The input resistance of the base of a voltage-divider
biased transistor can be neglected
Answer: Option D
A. at all times.
Answer: Option B
29.
Changes in DC result in changes in
A. I C.
B. VCE.
C. the Q-point.
Answer: Option D
A. 32 mA
B. 3.2 mA
C. 168 A
D. 320 A
Answer: Option D
A. –4.52 V
A. saturated.
B. 4.52 V
B. cutoff.
C. –9 V D. 20 V
Answer: Option A
D. 9V
5. In a fixed-bias circuit, which one of the stability
Answer: Option B factors overrides the other factors?
2. For the BJT to operate in the active (linear) A. S(ICO)
region, the base-emitter junction must be
________-biased and the base-collector junction
B. S(VBE)
must be ________-biased.
A. forward, forward
C. S( )
B. forward, reverse
D. Undefined
C. reverse, reverse
Answer: Option C
Answer: Option B
B. <
C.
D.
Answer: Option C
A. 18 V
Answer: Option C
A. 10 V
B. –10 V
C. 0.7 V
7.
A. 20
B. 50
C. 75
D. 116
Answer: Option D
B. 0V
C. 7.86 V
D. 18 V
B. 170 mW D. –145.8 nA
C. Answer: Option A
50 mW
11. Which of the following is (are) related to an
D. 0 mW emitter-follower configuration?
A. The input and output signals are in phase.
Answer: Option B
Answer: Option D
B. False
D. None of the above
Answer: Option A
Answer: Option B
16. In a voltage-divider circuit, which one of the
13. You can select the values for the emitter and stability factors has the least effect on the device
collector resistors from the information that is at very high temperature?
provided for this circuit.
A. S(ICO)
B. S(VBE)
C. S( )
D. Undefined
Answer: Option C
A. True
B. S(VBE)
B. False
C. S( )
Answer: Option B
D. All of the above
14. In the case of this circuit, you must assume that
VE = 0.1·VCC in order to calculate RC and RE.
Answer: Option D
A. True
A. 35.29 mA
B. False
B. 5.45 mA
Answer: Option A
C. 1.86 mA B. 16.35 V
D. 4.72 mA C. −3.65 V
Answer: Option D
D. 10 V
C. 36 ns B. IE and IC
D. 34 ns C. IB and IE
Answer: Option B
D. IB, IC, and IE
A. 1.4 V, 59.7 A
B. –1.4 V, 59.7 A
A. −12.12 V
C. –9.3 V, 3.58 A
Answer: Option A
D. 9.3 V, 3.58 A
Answer: Option A 28. The total time required for the transistor to switch
from the "off" to the "on" state is designated as
tonand defined as the delay time plus the time
25. Use this table to determine the change in I C from element.
25ºC to 175ºC for RB / RE = 250 due to the S(ICO)
stability factor. Assume an emitter-bias A. True
configuration.
B. False
Answer: Option A
29.
Calculate Rsat if VCE = 0.3 V.
A. 140.34 nA
B. 140.34 A
C. 42.53 nA
D. 0.14034 nA
Answer: Option B
B. 25, 75
C. 49.2 m
C. 40, 90
D. 49.2 M
Answer: Option B
Answer: Option A
B. IC and IB
B. forward, reverse
C. IE and IB
C. reverse, reverse
C.
FIELD-EFFECT TRANSISTORS
D.
1. For a JFET, the value of VDS at which ID becomes
essentially constant is the
Answer: Option C
A. pinch-off voltage.
C. breakdown voltage.
D. ohmic voltage.
Answer: Option A
A. 4.52 V B. E-MOSFET
B. –4.52 V C. V-MOSFET
Answer: Option A
C. 4.48 V
B. –6 V
C. 3V
D. 6V
Answer: Option C
B. 2V
C. 4V
D. –2 V
Answer: Option B
A. –9 V
B. 9V
C. 6V
D. –3 V
Answer: Option A
B. positive
B. 8V
C. negative
C. 6V
B. IDSS / 3.4
C. IDSS
Answer: Option C
A. –20 V
between the constant current area and the
C.
breakdown region.
B. –8 V
B. JFET
C. MOSFET
Answer: Option C
B. cutoff voltage.
C. 12 V
C. breakdown voltage.
D. –3 V
11. Refer to figure given below. Determine the value Answer: Option B
of VGS.
14. The JFET is always operated with the gate-
source pn junction ________ -biased.
A. forward A. a depletion MOSFET.
Answer: Option D
A. a
B. b
C. c
D. d
Answer: Option B
B. false A. 20 V
Answer: Option A B. 8V
17. Identify the n-channel D-MOSFET.
C. 6V
D. 2V
Answer: Option B
Answer: Option A
B. VGS. C. c
C. VS. D. d
C. an intrinsic layer.
Answer: Option D
B. 4 mA
B. reverse transconductance.
C. 2 mA
C. forward transconductance.
D. 0 mA
D. self-biasing.
Answer: Option D
Answer: Option C
27. A JFET data sheet specifies VGS(off) = –6 V and
Identify the p-channel E-MOSFET. IDSS = 8 mA. Find the value of ID when VGS = –3 V.
A. 2 mA
B. 4 mA
C. 8 mA
Answer: Option A
B. 1.4 mA
C. 4.8 mA
A. 13.2 V
D. 3.92 mA
B. 10 V
Answer: Option D
C. 6.8 V
29. Identify the n-channel E-MOSFET.
D. 0V
Answer: Option C
DC BIASING – FETs
1. Calculate the value of VDS.
A. a
B. b
C. c
D. d
Answer: Option C
A. 0V A. 2.400 k
B. 8V B. 5.167 k
C. 4.75 V C. 6.167 k
D. 16 V D. 6.670 k
3. Given the values of VDQ and IDQ for this circuit, 5. For the FET, the relationship between the input and
determine the required values of RD and RS. output quantities is ________ due to the ________
term in Shockley's equation.
A. nonlinear, cubed
B. linear, proportional
C. nonlinear, squared
Answer: Option C
A. 2k ,2k
B. 1k , 5.3 k
C. 3.2 k , 400
D. 2.5 k , 5.3 k
A. 10 M
Answer: Option C
B. 100 M
C. 110 M
D. 220 M
Answer: Option B
B. A resistor RS is added.
A. 2.4 k
B. M, fixed-bias
D. BJT, BJT
D. m, voltage-bias
9. Through proper design, a ________ can be
introduced that will affect the biasing level of a
voltage-controlled JFET resistor. Answer: Option A
A. photodiode
Calculate the value of RS. Assume VGSQ = −2V.
B. thermistor
C. laser diode
D. Zener diode
Answer: Option B
A. 0k
B. 1.68 k
A. 250
C. 6.81 k
B. 500
D. 8.5 k
Answer: Option B C. 10 M
B. IG = IS
C. ID = IS
D. IG = ID = IS
A. 2k
Answer: Option C
B. 3k
Calculate VDSQ.
C. 3.5 k
D. 4.13 k
Answer: Option D
16. Answer: Option A
B. VGS(off)
C. VS
D. VP
Answer: Option C
Answer: Option B
Calculate VDS.
A. –3 V
B. 3V
C. –4 V
D. 4V
21. 23.
A. 0 V, 0 V
B. 5 V, 5 V
A. 0V
C. 10 V, 10 V
B. 6V
D. 20 V, 20 V
C. 16 V Answer: Option A
D. 11 V
24. Depletion-type MOSFETs do not permit operating
points with positive values of VGS and levels of IDthat
Answer: Option A exceed IDSS.
A. True
22. For the noninverting amplifier, one of the most
important advantages associated with using a JFET
B. False
for control is the fact that it is ________ rather than
________ control.
Answer: Option B
A. dc, ac
Answer: Option A
A. 0V A. 23.0 V
B. 20 V B. 17.0 V
C. 30 V C. 4.6 V
D. 40 V D. 12.4 V
26. What is the approximate current level in the gate of 28. Calculate VCE.
an FET in dc analysis?
A. 0A
B. 0.7 mA
C. 0.3 mA
D. Undefined
Answer: Option A
Calculate VD.
A. 0V
B. 2V
C. 3V
32. Which of the following describe(s) the difference(s)
D. 5.34 V
between JFETs and depletion-type MOSFETs?
Answer: Option D VGS can be positive or negative for the
A.
depletion-type.
B. False
Answer: Option A
A. 3.5 V
B. 4.86 V
C. 7.14 V
D. 10 V
Answer: Option A
B. 3.3 k B. False
Answer: Option B
C. 4k
D. 5k
Answer: Option B
35.
Determine the quiescent values of I D and VGS.
Answer: Option B