2SK2956

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-566B (Z)
3rd. Edition
Jun 1998

Features

• Low on-resistance
R DS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching

Outline

TO–220CFM

G
1 2
3 1. Gate
2. Drain
3. Source
S
2SK2956

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 50 A
Note1
Drain peak current I D(pulse) 200 A
Body-drain diode reverse drain current I DR 50 A
Note2
Channel dissipation Pch 35 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0
Zero gate voltege drain current I DSS — — 10 µA VDS = 30 V, VGS = 0
Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 7.0 10 mΩ I D = 25A, VGS = 10V Note3
resistance
Static drain to source on state RDS(on) — 12 18 mΩ I D = 25A, VGS = 4V Note3
resistance
Forward transfer admittance |yfs| 25 45 — S I D = 25A, VDS = 10V Note3
Input capacitance Ciss — 2000 — pF VDS = 10V
Output capacitance Coss — 1500 — pF VGS = 0
Reverse transfer capacitance Crss — 350 — pF f = 1MHz
Turn-on delay time t d(on) — 20 — ns VGS = 10V, ID = 25A
Rise time tr — 330 — ns RL = 0.4Ω
Turn-off delay time t d(off) — 190 — ns
Fall time tf — 190 — ns
Body–drain diode forward voltage VDF — 0.95 — V I F = 50A, VGS = 0
Body–drain diode reverse t rr — 60 — ns I F = 50A, VGS = 0
recovery time diF/ dt =50A/µs
Note: 3. Pulse test

2
 2SK2956

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

40 1000

300 10
µs
Pch (W)

I D (A)
30 100 10
PW 0
= 1 m µs
30 DC 10
Op m s
s(

Drain Current
era 1s
Channel Dissipation

20 10 tio ho
n( t)
Tc
3 =2
Operation in 5°
this area is C)
10 1 limited by R DS(on)
0.3
0.1 Ta = 25°C
0 50 100 150 200 0.1 0.3 1 3 10 30 100
Case Temperature Tc (°C) Drain to Source Voltage V (V)
DS

Typical Output Characteristics

10 V 5 V Typical Transfer Characteristics
50 50
Pulse Test
4V V DS = 10 V
3.5 V Pulse Test
40 40
I D (A)
I D (A)

3V
30 30
Drain Current

Drain Current

25°C
20 20
2.5 V 75°C
Tc = –25°C
10 10
VGS = 2 V

0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage V DS(V) Gate to Source Voltage V (V)
GS

3
2SK2956

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
0.5 500

Drain to Source On State Resistance

R DS(on) (mW)
Pulse Test Pulse Test
Drain to Source Saturation Voltage
V DS(on) (V)

0.4 500

100
0.3
50
0.2
I D = 20 A 20
VGS = 4 V
0.1 10 A 10
5A 10 V
5
0 4 8 12 16 20 1 2 5 10 20 50 100 200
Gate to Source Voltage V GS (V) Drain Current I D (A)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
Static Drain to Source on State Resistance
R DS(on) (mW)

20 50
Forward Transfer Admittance |y fs | (S)

Pulse Test
I D = 5, 10, 20 A
16 20
Tc = –25 °C
VGS = 4 V 10 25 °C
12
5
8 75 °C
5 ,10, 20 A
2
10 V
4
1 V DS = 10 V
Pulse Test
0 0.5
–40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 20 50
Case Temperature Tc (°C) Drain Current I D (A)

4
 2SK2956

Body–Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
100 10000
Reverse Recovery Time trr (ns)

50 3000

Capacitance C (pF)
Ciss

20 1000
Coss
10 300
Crss
5 100

2 300
di / dt = 50 A / µs VGS = 0
V GS = 0, Ta = 25 °C f = 1 MHz
1 10
0.1 0.3 1 3 10 30 100 0 10 20 30 40 50
Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V)

Dynamic Input Characteristics Switching Characteristics

50 20 1000
V GS (V)
V DS (V)

V GS = 10 V, V DD = 10 V
I D = 50 A
500 PW = 5 µs, duty < 1 %
40 16
Switching Time t (ns)

t d(off)
V GS
200
Gate to Source Voltage
Drain to Source Voltage

30 VDD = 5 V 12 tf
V DS
10 V 100
25 V tr
20 8
50

10 4 t d(on)
VDD = 25 V 20
10 V
5V 0 10
0 20 40 60 80 100 0.1 0.2 0.5 1 2 5 10 20 50
Gate Charge Qg (nc) Drain Current I D (A)

5
2SK2956

Reverse Drain Current vs.

Source to Drain Voltage
50

Reverse Drain Current I DR (A)

40
10 V

5V
30
V GS = 0, –5 V

20

10

Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V SD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3
Normalized Transient Thermal Impedance
g s (t)

Tc = 25°C
1
D=1

0.5
0.3

0.2
q ch – c(t) = g s (t) • q ch – c
0.1 0.1 q ch – c = 3.57°C/W, Tc = 25°C

0.05 PW
PDM D=
T
0.03 0.02
e PW
0.0
1
p uls
hot T
1s
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (S)

6
 2SK2956

Switching Time Test Circuit Waveform

Vin Monitor Vout

Monitor
90%
D.U.T.
RL
Vin 10%

Vin V DD Vout 10%

50W 10%
10 V = 10 V

90% 90%

td(on) tr td(off) tf

7
2SK2956

Package Dimensions

Unit: mm

10.0 ± 0.3 2.7 ± 0.2

f 3.2 ± 0.2

15.0 ± 0.3
12.0 ± 0.3

1.0 ± 0.2 4.5 ± 0.3

1.15 ± 0.2

13.6 ± 1.0
2.5 ± 0.2
4.1 ± 0.3

0.6 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.7 ± 0.1

Hitachi Code TO–220CFM

EIAJ —
JEDEC —

8
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