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ABSTRACT
power crisis and large leakage current. When the MOSFET dimension is
scaled down to nanometre (<100 nm), many physical barriers arise, like
electronic circuits, reduce the leakage current and reduce the short channel
complement the MOSFETs used today. There are several new devices are
available for low power applications due to their low off current and small
subthreshold swing.
In this paper, the surface potential and the drain current of the Tunnel
Field Effect Transistor (TFET) are being analyzed. The performance is also