FGH40N60SMDF — 600 V, 40 A Field Stop IGBT

November 2013

FGH40N60SMDF
600 V, 40 A Field Stop IGBT
Features Applications
• Maximum Junction Temperature : TJ = 175°C • Solar Inverter, UPS, Welder, PFC, Telecom, ESS
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability General Description
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A Using Novel Field Stop IGBT Technology, Fairchild’s new series
• High Input Impedance of field stop 2nd generation IGBTs offer the optimum perfor-
• Fast Switching: EOFF = 6.5 uJ/A mance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are
• Tightened Parameter Distribution
essential.
• RoHS Compliant

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage  20 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current o
@ TC = 25 C 120 A
Maximum Power Dissipation @ TC = 25oC 349 W
PD
o
Maximum Power Dissipation @ TC = 100 C 174 W
o
TJ Operating Junction Temperature -55 to +175 C
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case - 1.45 C/W
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH40N60SMDF FGH40N60SMDF TO-247 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.6 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 3.5 4.6 6.0 V
IC = 40 A, VGE = 15 V - 1.9 2.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V,
- 2.1 - V
TC = 150oC

Dynamic Characteristics
Cies Input Capacitance - 1880 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 180 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 50 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 12 - ns
tr Rise Time - 20 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 92 - ns
tf Fall Time RG = 6 , VGE = 15 V, - 13 20 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.3 - mJ
Eoff Turn-Off Switching Loss - 0.26 - mJ
Ets Total Switching Loss - 1.56 - mJ
td(on) Turn-On Delay Time - 12 - ns
tr Rise Time - 19 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 97 - ns
tf Fall Time RG = 6 , VGE = 15 V, - 14 21 ns
Inductive Load, TC = 150oC
Eon Turn-On Switching Loss - 2.09 - mJ
Eoff Turn-Off Switching Loss - 0.44 - mJ
Ets Total Switching Loss - 2.53 - mJ
Qg Total Gate Charge - 119 - nC
VCE = 400 V, IC = 40 A,
Qge Gate to Emitter Charge - 13 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 58 - nC

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 1.3 1.7
VFM Diode Forward Voltage IF = 20 A V
TC = 150oC - 1.2
TC = 25oC - 70 90
trr Diode Reverse Recovery Time ns
TC = 150oC - 126
IF =20 A, diF/dt = 200 A/s
TC = 25oC - 207 290
Qrr Diode Reverse Recovery Charge nC
o
TC = 150 C - 638

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o 20V 12V o 20V 12V
TC = 25 C TC = 150 C
15V 10V 15V 10V
Collector Current, IC [A]

Collector Current, IC [A]

90 90

60 60
VGE = 8V

VGE = 8V
30 30

0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
120 120
Common Emitter
Common Emitter
VCE = 20V
VGE = 15V
o
o TC = 25 C
Collector Current, IC [A]

TC = 25 C
Collector Current, IC [A]

90 90 T = 150oC
o C
TC = 150 C

60 60

30 30

0 0
0 1 2 3 4 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0
Common Emitter 20
Common Emitter
Collector-Emitter Voltage, VCE [V]

VGE = 15V o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
80A
2.5 16

12
2.0

40A 8

40A
1.5 80A
4
IC = 20A IC = 20A

1.0 0
4 8 12 16 20
25 50 75 100 125 150
o Gate-Emitter Voltage, VGE [V]
Case Temperature, TC [ C]

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20
20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 150 C
16
16

12
12

8
8

40A 80A
80A
4
4 40A
IC = 20A IC = 20A

0
0 4 8 12 16 20
4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

4000 15
Common Emitter
Common Emitter o
VGE = 0V, f = 1MHz TC = 25 C
Gate-Emitter Voltage, VGE [V]

TC = 25 C
o 12
3000 VCC = 100V
Capacitance [pF]

200V
9
Cies
300V
2000
6

1000 Coes
3

Cres

0 0
0.1 1 10 30 0 40 80 120
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
300 100
100 10s
tr
100s
1ms
Collector Current, Ic [A]

10 ms
Switching Time [ns]

10
DC
td(on)
10
1
Common Emitter
VCC = 400V, VGE = 15V
*Notes: IC = 40A
0.1 o
1. TC = 25 C o
TC = 25 C
o
2. TJ = 150 C o
TC = 150 C
3. Single Pulse
0.01 1
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG []

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000 1000
Common Emitter
VGE = 15V, RG = 6
td(off) o
TC = 25 C
o
TC = 150 C

Switching Time [ns]

Switching Time [ns]

100 100 tr

tf

10 Common Emitter 10 td(on)

VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 150 C
1 1
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
1000 5

Eon

td(off)
Switching Loss [mJ]
Switching Time [ns]

100
1
Eoff
tf
Common Emitter
VCC = 400V, VGE = 15V
10 Common Emitter
IC = 40A
VGE = 15V, RG = 6
o
TC = 25 C
o TC = 25 C
o
TC = 150 C
o TC = 150 C

1 0.1
20 30 40 50 60 70 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [ ]

Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
6 200

100
Eon
Collector Current, IC [A]
Switching Loss [mJ]

Eoff
10

Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
Safe Operating Area
o o
TC = 150 C VGE = 15V, TC = 150 C
0.1 1
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

100 1000
o
TC = 150 C
100

Reverse Currnet, IR [A]

o
Forward Current, IF [A]

TC = 150 C
10
o
TC = 75 C
o
TC = 75 C
10 1
o
TC = 25 C
0.1
o
o
TC = 25 C
TC = 25 C
o
TC = 75 C ---- 0.01
o
TC = 150 C
1 1E-3
0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

350 120
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

300

100
250
200A/s diF/dt = 100A/s
200
80
150

200A/s
100 diF/dt = 100A/s 60
50

0 40
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
Forwad Current, IF [A] Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5

0.1 0.2

0.1
PDM
0.05
t1
0.02 t2
0.01
single pulse Duty Factor, D = t1/t2
0.01 Peak Tj = Pdm x Zthjc + TC
0.006
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
Mechanical Dimensions

Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003

©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH40N60SMDF Rev. C1
 FGH40N60SMDF — 600 V, 40 A Field Stop IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ®
®*
BitSiC™ Global Power Resource SM PowerTrench ®
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
MicroFET™ SMART START™
® SerDes™
MicroPak™ Solutions for Your Success™
Fairchild® MicroPak2™ SPM®
Fairchild Semiconductor ® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
® mWSaver ® SuperSOT™-3 Ultra FRFET™
FACT
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC ®
SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR ® SupreMOS ® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2010 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGH40N60SMDF Rev. C1