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FDD9407_F085 N-Channel Power Trench ® MOSFET

FDD9407L - F085 N-Channel Logic Level PowerTrench ® MOSFET 40 V, 100 A, 1.7 m

FDD9407L-F085

N-Channel Logic Level PowerTrench ® MOSFET

40 V, 100 A, 1.7 mΩ

Features

Typ r DS(on) = 1.6mΩ at V GS = 10V, I D = 80A

Typ Q g(tot) = 86nC at V GS = 10V, I D = 80A

UIS Capability

RoHS Compliant

Qualified to AEC Q101

Applications

D S
D
S

G

D-PAK

TO-252

(TO-252)

G

D

to AEC Q101 Applications D S G D-PAK TO-252 (TO-252) G D S Automotive Engine Control

S

Automotive Engine Control

Powertrain Management

Solenoid and Motor Drivers

Electronic Steering

Integrated Starter/alternator

Distributed Power Architectures and VRM

Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings T J

Primary Switch for 12V Systems

MOSFET Maximum Ratings T J = 25°C unless otherwise noted

 

Symbol

Parameter

Ratings

Units

V DSS

Drain to Source Voltage

40

 

V

V GS

Gate to Source Voltage

±20

 

V

I

 

Drain Current - Continuous (V GS =10) (Note 1)

T C = 25°C

100

 

A

D

Pulsed Drain Current

T C = 25°C

See Figure4

E AS

Single Pulse Avalanche Energy

(Note 2)

171

 

mJ

P D

Power Dissipation

227

 

W

Derate above 25 o C

1.52

W/ o C

T J , T STG

Operating and Storage Temperature

-55 to + 175

 

o

C

R θJC

Thermal Resistance Junction to Case

0.66

o

C/W

R θJA

Maximum Thermal Resistance Junction to Ambient

(Note 3)

52

o

C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD9407L

FDD9407_F085

D-PAK(TO-252)

13”

12mm

2500 units

Notes:

1: Current is limited by bondwire configuration. 2: Starting T J = 25°C, L = 0.08mH, I AS = 64A, V DD = 40V during inductor charging and V DD = 0V during time in avalanche

3: R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θJA is determined by the user's board design. The maximum rating

presented here is based on mounting on a 1 in

2

pad of 2oz copper.

©2018 ON Semiconductor Components Industries, LLC.

February-2018,Rev.1 (Vietnam)

1

Publication Order Number:

FDD9407L-F085

FDD9407_F085 N-Channel Power Trench ® MOSFET

Electrical Characteristics T J = 25°C unless otherwise noted

Symbol

Parameter

   

Test Conditions

Min

Typ

Max

Units

Off Characteristics

 

B

VDSS

Drain to Source Breakdown Voltage

I

D = 250μA, V GS = 0V

40

-

-

V

I

Drain to Source Leakage Current

V DS =40V,

T J = 25 o C

 

--1

 

μA

DSS

V GS = 0V

T J = 175 o C(Note 4)

-

-

1

mA

I

GSS

Gate to Source Leakage Current

V GS = ±20V

 

-

-

±100

nA

On Characteristics

 

V

GS(th)

Gate to Source Threshold Voltage

V GS = V DS , I D = 250μA

2.0

3.1

4.0

V

 

Drain to Source On Resistance

I

D = 80A, V GS = 10V

T J = 25 o C

-

1.6

2

mΩ

r

DS(on)

T J = 175 o C(Note 4)

-

2.64

3.22

mΩ

Dynamic Characteristics

 

C

iss

Input Capacitance

 

-

6390

-

pF

C

 

Output Capacitance

V DS = 25V, V GS = 0V,

-

1580

-

pF

oss

f

= 1MHz

C

rss

Reverse Transfer Capacitance

 

-

95

-

pF

R

g

Gate Resistance

f

= 1MHz

-

2.3

-

Ω

Q

g(ToT)

Total Gate Charge at 10V

V GS = 0 to 10V

V DD = 32V I D = 80A

-

86

112

nC

Q

g(th)

Threshold Gate Charge

V GS = 0 to 2V

 

-

12

15.6

nC

Q

gs

Gate to Source Gate Charge

 

-

30

-

nC

Q

gd

Gate to Drain “Miller“ Charge

-

15

-

nC

Switching Characteristics

 

t

on

Turn-On Time

   

-

-

120

ns

t

d(on)

Turn-On Delay Time

 

-

27

-

ns

t

r

Rise Time

 

V DD = 20V, I D = 80A, V GS = 10V, R GEN = 6Ω

-

48

-

ns

t

d(off)

Turn-Off Delay Time

 

-

42

-

ns

t

f

Fall Time

   

-

18

-

ns

t

off

Turn-Off Time

 

-

-

97

ns

Drain-Source Diode Characteristics

 

V

 

Source to Drain Diode Voltage

 

I SD = 80A, V GS = 0V

 

-

-

1.25

V

SD

 

I SD = 40A, V GS = 0V

 

-

-

1.2

V

T

rr

Reverse Recovery Time

 

I

F = 80A, dI SD /dt = 100A/μs, V DD =32V

-

58

88

ns

Q

rr

Reverse Recovery Charge

 

-

83

143

nC

Notes:

4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

February-2018,Rev.1 (Vietnam)

2

FDD9407_F085 N-Channel Power Trench ® MOSFET

Typical Characteristics

1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
POWER DISSIPATION MULTIPLIER

T C , CASE TEMPERATURE( o C)

Figure 1. Normalized Power Dissipation vs Case Temperature

300 CURRENT LIMITED V GS = 10V BY PACKAGE 250 200 CURRENT LIMITED BY SILICON
300
CURRENT LIMITED
V GS = 10V
BY PACKAGE
250
200
CURRENT LIMITED
BY SILICON
150
100
50
0
25
50
75
100
125
150
175
200
T C , CASE TEMPERATURE( o C)
I D , DRAIN CURRENT (A)

Figure 2. Maximum Continuous Drain Current vs Case Temperature

2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 P 0.10 DM 0.05
2
DUTY CYCLE
-
DESCENDING ORDER
1
D =
0.50
0.20
P
0.10
DM
0.05
0.02
t
0.1
0.01
1
t
2
NOTES:
DUTY FACTOR:
D =
t
1 /t 2
SINGLE PULSE
PEAK T J
= P DM x
Z θJA x R θJA + T C
0.01
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
NORMALIZED THERMAL
IMPEDANCE, Z θJC

Figure 3.

t, RECTANGULAR PULSE DURATION(s)

Normalized Maximum Transient Thermal Impedance

1000 10V V GS = 100 T C = 25 o C FOR TEMPERATURES ABOVE
1000
10V
V GS =
100
T C = 25 o C
FOR TEMPERATURES
ABOVE
25 o C DERATE PEAK
CURRENT AS FOLLOWS:
10
175
- T C
I
=
I
2
150
SINGLE
PULSE
1
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
I DM , PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

February-2018,Rev.1 (Vietnam)

3

FDD9407_F085 N-Channel Power Trench ® MOSFET

Typical Characteristics 1000 100 100us 10 1ms OPERATION IN THIS AREA MAY BE 1 LIMITED
Typical Characteristics
1000
100
100us
10
1ms
OPERATION IN THIS
AREA MAY BE
1
LIMITED
BY r DS(on)
10ms
SINGLE PULSE
100ms
T J
=
MAX RATED
T C
=
25 o C
0.1
1
10
100
I D , DRAIN CURRENT (A)

V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 5.

Forward Bias Safe Operating Area

If R = 0 1000 t AV = (L)(I AS )/(1.3*RATED BV DSS - V
If R = 0
1000
t AV = (L)(I AS )/(1.3*RATED BV DSS -
V
DD )
If
R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS
-
V DD ) +1]
100
STARTING T J
= 25 o C
10
STARTING
T J = 150 o C
1
1E-3
0.01
0.1
1
10
100
1000
I AS , AVALANCHE CURRENT (A)

t AV , TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching Capability

250 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 200 V DD = 5V
250
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
200
V DD = 5V
150
T J = 175 o C
100
T J = -55 o
C
T J = 25 o C
50
0
I D , DRAIN CURRENT (A)
300 V GS = 0 V 100 T J = 175 o C o T
300
V GS = 0 V
100
T J = 175 o C
o
T J = 25
C
10
1
I S , REVERSE DRAIN CURRENT (A)

34567 0.0

0.2

0.4

0.6

0.8

1.0

1.2

V GS , GATE TO SOURCE VOLTAGE (V)

V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 7.

Transfer Characteristics

Figure 8.

Forward Diode Characteristics

250 200 V GS 15V Top 10V 150 8V 7V 5.5V 6V 5.5V Bottom 100
250
200
V GS
15V Top
10V
150
8V
7V
5.5V
6V
5.5V Bottom
100
50
80μs PULSE WIDTH
Tj=25 o C
0
I D , DRAIN CURRENT (A)
250 200 V GS 5.5V 5.5V 15V Top 150 10V 8V 7V 6V 100 5.5V
250
200
V GS
5.5V
5.5V
15V Top
150
10V
8V
7V
6V
100
5.5V Bottom
50
80μs PULSE WIDTH
Tj=175 o C
0
I D , DRAIN CURRENT (A)

012 0.0

0.5

1.0

1.5

2.0

V DS , DRAIN TO SOURCE VOLTAGE (V)

V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 9.

Saturation Characteristics

Figure 10.

Saturation Characteristics

February-2018,Rev.1 (Vietnam)

4

FDD9407_F085 N-Channel Power Trench ® MOSFET

Typical Characteristics

30 I D = 80A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 24
30
I D = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
24
18
T J = 175 o C
T J = 25 o C
12
6
0
2
4
6
810
r DS(on) , DRAIN TO SOURCE
( )ΩmON-RESISTANCE

V GS , GATE TO SOURCE VOLTAGE (V)

Figure 11.

Rdson vs Gate Voltage

1.2 V GS = V DS I D = 250μA 1.0 0.8 0.6 0.4 -80
1.2
V GS = V DS
I D = 250μA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
200
NORMALIZED GATE
THRESHOLD VOLTAGE

T J , JUNCTION TEMPERATURE( o C)

Figure 13.

Normalized Gate Threshold Voltage vs Temperature

10000 C iss 1000 C oss 100 C rss f = 1MHz V GS =
10000
C
iss
1000
C
oss
100
C
rss
f
=
1MHz
V
GS = 0V
10
0.1
1
10
100
CAPACITANCE (pF)

V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 15.

Capacitance vs Drain to Source Voltage

1.8 PULSE DURATION = DUTY CYCLE = 0.5% 80μs MAX 1.6 1.4 1.2 1.0 I
1.8
PULSE DURATION =
DUTY CYCLE = 0.5%
80μs
MAX
1.6
1.4
1.2
1.0
I D =
80A
0.8
= 10V
V GS
0.6
-80
-40
0
40
80
120
160
200
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

T J , JUNCTION TEMPERATURE( o C)

Figure 12. Normalized Rdson vs Junction Temperature

1.2 I D = 1mA 1.1 1.0 0.9 0.8 -80 -40 0 40 80 120
1.2
I D = 1mA
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
200
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE

T J , JUNCTION TEMPERATURE ( o C)

Figure 14.

Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10 ID = 80A 8 V DD = 20V 6 4 2 0 0 20
10
ID = 80A
8
V DD = 20V
6
4
2
0
0
20
40
60
80
100
V GS , GATE TO SOURCE VOLTAGE(V)

Figure 16.

Q g , GATE CHARGE(nC)

Gate Charge vs Gate to Source Voltage

February-2018,Rev.1 (Vietnam)

5

D-PAK TO-252

E A C2 b3 b b2 C e A1 e1 E1 MILLIMETERS INCHES DIM. MIN.
E
A
C2
b3
b
b2
C
e
A1
e1
E1
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28
BSC
0.090
BSC
e1
4.56
BSC
0.180
BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
Notes
Dimension L3/E1 is for reference only.
L4
D1
L3
L5
D
gage plane height (0.5 mm)
L
H

February-2018,Rev.1 (Vietnam)

6

Product specification Supersedes data of VIETNAM