® 1N581x

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

IF(AV) 1A
VRRM 40 V
Tj 150°C
VF (max) 0.45 V

FEATURES AND BENEFITS

n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n EXTREMELY FAST SWITCHING
n LOW FORWARD VOLTAGE DROP
n AVALANCHE CAPABILITY SPECIFIED DO41
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO41 these devices
are intended for use in low voltage, high frequency
inverters, free wheeling, polarity protection and
small battery chargers.

ABSOLUTE RATINGS (limiting values)

Value
Symbol Parameter Unit
1N5817 1N5818 1N5819
VRRM Repetitive peak reverse voltage 20 30 40 V
IF(RMS) RMS forward current 10 A
IF(AV) Average forward current TL = 125°C 1 A
δ = 0.5
IFSM Surge non repetitive forward tp = 10 ms 25 A
current Sinusoidal
PARM Repetitive peak avalanche tp = 1µs Tj = 25°C 1200 1200 900 W
power
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot 1
* : < thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a )

July 2003 - Ed: 4A 1/5

1N581x

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient Lead length = 10 mm 100 °C/W
Rth (j-l) Junction to lead Lead length = 10 mm 45 °C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions 1N5817 1N5818 1N5819 Unit

IR * Reverse leakage Tj = 25°C VR = VRRM 0.5 0.5 0.5 mA
current Tj = 100°C 10 10 10 mA
VF * Forward voltage drop Tj = 25°C IF = 1 A 0.45 0.50 0.55 V
Tj = 25°C IF = 3 A 0.75 0.80 0.85 V
Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equations :

P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818
P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819

Fig. 1: Average forward power dissipation versus Fig. 2: Average forward power dissipation versus
average forward current (1N5817/1N5818). average forward current (1N5819).

PF(av)(W) PF(av)(W)
0.6 0.7
δ = 0.1 δ = 0.2 δ = 0.5
δ = 0.2 δ = 0.5
δ = 0.1 0.6
0.5 δ = 0.05
δ = 0.05
0.5
0.4 δ=1 δ=1
0.4
0.3
0.3
0.2
T 0.2 T

0.1 0.1
IF(av) (A) δ=tp/T tp IF(av) (A) δ=tp/T tp

0.0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Fig. 2-1: Average forward current versus ambient Fig. 2-2: Average forward current versus ambient
temperature (δ=0.5) (1N5817/1N5818). temperature (δ=0.5) (1N5819).

IF(av)(A) IF(av)(A)
1.2 1.2
Rth(j-a)=Rth(j-l)=45°C/W Rth(j-a)=Rth(j-l)=45°C/W
1.0 1.0

0.8 Rth(j-a)=100°C/W 0.8 Rth(j-a)=100°C/W

0.6 0.6

0.4 0.4
T T

0.2 0.2
δ=tp/T tp Tamb(°C) δ=tp/T tp Tamb(°C)
0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

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 1N581x

Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating
versus pulse duration. versus junction temperature.

PARM(tp) PARM(tp)
PARM(1µs) PARM(25°C)
1 1.2

1
0.1 0.8

0.6

0.01 0.4

0.2
tp(µs) Tj(°C)
0.001 0
0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150

Fig. 5-1: Non repetitive surge peak forward Fig. 5-2: Non repetitive surge peak forward
current versus overload duration current versus overload duration
(maximum values) (1N5817/1N5818). (maximum values) (1N5819).

IM(A) IM(A)
10 8
9 7
8
6
7
6 Ta=25°C 5 Ta=25°C

5 Ta=75°C
4 Ta=75°C
4 3
3 Ta=100°C
Ta=100°C 2
2 IM IM

1 t 1 t
δ=0.5 t(s) δ=0.5 t(s)
0 0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0

Fig. 6: Relative variation of thermal impedance Fig. 7: Junction capacitance versus reverse
junction to ambient versus pulse duration (epoxy voltage applied (typical values).
printed circuit board, e(Cu)=35mm, recommended
pad layout).

Zth(j-a)/Rth(j-a) C(pF)
1.0 500
F=1MHz
Tj=25°C

0.8 200
1N5817

0.6 δ = 0.5 100

1N5818

0.4 50 1N5819

δ = 0.2 T
0.2 δ = 0.1
20
tp(s) δ=tp/T tp
VR(V)
Single pulse
0.0 10
1E-1 1E+0 1E+1 1E+2 1E+3 1 2 5 10 20 40

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1N581x

Fig. 8-1: Reverse leakage current versus reverse Fig. 8-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5817/1N5818). voltage applied (typical values) (1N5819).

IR(mA) IR(mA)
1E+1 1E+1
Tj=125°C 1N5818
Tj=125°C
1N5817
1E+0 1E+0

Tj=100°C Tj=100°C

1E-1 1E-1

1E-2 1E-2
Tj=25°C
Tj=25°C
VR(V) VR(V)
1E-3 1E-3
0 5 10 15 20 25 30 0 5 10 15 20 30 35 40

Fig. 9-1: Forward voltage drop versus forward Fig. 9-2: Forward voltage drop versus forward
current (typical values) (1N5817/1N5818). current (typical values) (1N5819).

IFM(A) IFM(A)
10.00 10.00

1.00 1.00
Tj=100°C Tj=100°C
Tj=125°C Tj=125°C

Tj=25°C Tj=25°C
0.10 0.10

VFM(V) VFM(V)
0.01 0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Fig. 10: Non repetitive surge peak forward current

versus number of cycles.

IFSM(A)
30
F=50Hz Tj initial=25°C
25

20

15

10

5
Number of cycles
0
1 10 100 1000

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 1N581x
PACKAGE MECHANICAL DATA
DO41 plastic

DIMENSIONS
C A C / B
O
REF. Millimeters Inches

Min. Max. Min. Max.

A 4.1 5.2 0.16 0.205
B 2 2.7 0.08 0.107
/D
O /D
O
C 25.4 1
D 0.71 0.86 0.028 0.034

Ordering type Marking Package Weight Base qty Delivery mode

1N581x Part number DO41 0.34g 2000 Ammopack
cathode ring
1N581xRL Part number DO41 0.34g 5000 Tape & reel
cathode ring
n Epoxy meets UL94,V0

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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