Power Transistors

2SD1327
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching Unit: mm
10.0±0.2 4.2±0.2

0.7±0.1
■ Features 5.5±0.2 2.7±0.2

4.2±0.2
● Incorporating a zener diode of 60V zener voltage between col-

7.5±0.2
lector and base φ3.1±0.1

16.7±0.3
● Minimized variation in the breakdown voltage
● Large energy handling capability
● High-speed switching
● Full-pack package which can be installed to the heat sink with 1.3±0.2

4.0
1.4±0.1
one screw

14.0±0.5
Solder Dip
0.5 +0.2
–0.1
0.8±0.1
■ Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol Ratings Unit 2.54±0.25

Collector to base voltage VCBO 60±10 V 5.08±0.5

1 2 3
Collector to emitter voltage VCEO 60±10 V 1:Base
2:Collector
Emitter to base voltage VEBO 7 V
3:Emitter
Peak collector current ICP 12 A TO–220 Full Pack Package(a)

Collector current IC 8 A Internal Connection

Collector power TC=25°C 45
PC W C
dissipation Ta=25°C 2
Junction temperature Tj 150 ˚C B
Storage temperature Tstg –55 to +150 ˚C
E

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 50V, IE = 0 100 µA
Emitter cutoff current IEBO VEB = 7V, IC = 0 2 mA
Collector to emitter voltage VCEO IC = 5mA, IB = 0 50 70 V
hFE1*1 VCE = 3V, IC = 4A 2000 10000
Forward current transfer ratio
hFE2 VCE = 3V, IC = 8A 500
Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 8mA 1.5 V
Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 8mA 2 V
Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz 20 MHz
Turn-on time ton 0.5 µs
IC = 4A, IB1 = 8mA, IB2 = –8mA,
Storage time tstg 4 µs
VCC = 50V
Fall time tf 1 µs
Energy handling capability Es/b*2 IC = 1A, L = 100mH, RBE = 100Ω 50 mJ

*1h Rank classification *2E Test circuit

FE1 s/b

Rank Q P 60Hz mercury relay X

L
hFE1 2000 to 5000 4000 to 10000
Y
120Ω RBE
6V 1Ω
G

1
Power Transistors 2SD1327

PC — Ta IC — VCE VCE(sat) — IC
50 12

Collector to emitter saturation voltage VCE(sat) (V)

(1) TC=Ta TC=25˚C IC/IB=500
(1)
(2) With a 100 × 100 × 2mm 10
Collector power dissipation PC (W)

Al heat sink 10 TC=100˚C

40 (3) With a 50 × 50 × 2mm 25˚C

Collector current IC (A)

Al heat sink 3
(4) Without heat sink IB=4.0mA
8 3.5mA
(PC=2W) 3.0mA –25˚C
30 2.5mA 1
2.0mA
1.5mA
6
1.0mA 0.3
20
0.5mA
4
0.1
(2)
10
2
(3) 0.03
(4)
0 0 0.01
0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 0.1 0.3 1 3 10 30
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VBE(sat) — IC hFE — IC IC — Lcoil

100000 1000
VCE=3V
Base to emitter saturation voltage VBE(sat) (V)

IC/IB=500 RBE=100Ω
10 TC=25˚C
Forward current transfer ratio hFE

30000 300
TC=100˚C
25˚C

Collector current IC (A)

3 10000 100
TC=–25˚C
–25˚C
1 3000 30
100˚C 25˚C
1000 10
0.3 50mJ

300 3
0.1
100 1

0.03
30 0.3

0.01 10 0.1
0.1 0.3 1 3 10 30 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Collector current IC (A) Collector current IC (A) Load inductance Lcoil (mH)

Area of safe operation (ASO) Rth(t) — t

1000 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

300
102
(1)
Collector current IC (A)

100

30 (2)
10
ICP
10
IC t=1ms
1
3
10ms
DC
1
10–1
0.3

0.1 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)