PD - 97035D

IRFB4227PbF
Features
l Advanced Process Technology
Key Parameters
l Key Parameters Optimized for PDP Sustain, VDS max 200 V
Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V
l Low E PULSE Rating to Reduce Power
RDS(ON) typ. @ 10V 19.7 m:
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications IRP max @ TC= 100°C 130 A
l Low QG for Fast Response TJ max 175 °C
l High Repetitive Peak Current Capability for

Reliable Operation D
D
l Short Fall & Rise Times for Fast Switching

l175°C Operating Junction Temperature for

Improved Ruggedness
G
l Repetitive Avalanche Capability for Robustness S
D
and Reliability G
S
l Class-D Audio Amplifier 300W-500W TO-220AB
(Half-bridge)
G D S
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 65 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 46
IDM Pulsed Drain Current c 260
IRP @ TC = 100°C Repetitive Peak Current g 130
PD @TC = 25°C Power Dissipation 330 W
PD @TC = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
TJ Operating Junction and -40 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x
10lb in (1.1N m) x N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient f ––– 62

Notes  through † are on page 8

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 19.7 24 mΩ VGS = 10V, ID = 46A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 49 ––– ––– S VDS = 25V, ID = 46A
Qg Total Gate Charge ––– 70 98 nC VDD = 100V, ID = 46A, VGS = 10V e
Qgd Gate-to-Drain Charge ––– 23 –––
td(on) Turn-On Delay Time ––– 33 ––– ns VDD = 100V
tr Rise Time ––– 20 ––– ID = 46A
td(off) Turn-Off Delay Time ––– 21 ––– RG = 2.5Ω
tf Fall Time ––– 31 ––– VGS = 10V e
tst Shoot Through Blocking Time 100 ––– ––– ns VDD = 160V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
––– 570 –––
EPULSE Energy per Pulse µJ VDS = 160V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
––– 910 –––
VDS = 160V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance ––– 4600 ––– VGS = 0V
Coss Output Capacitance ––– 460 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 91 ––– ƒ = 1.0MHz,
Coss eff. Effective Output Capacitance ––– 360 ––– VGS = 0V, VDS = 0V to 160V
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 140 mJ
EAR Repetitive Avalanche Energy c ––– 33 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 240 ––– V
IAS Avalanche Currentd ––– 39 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 65 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 260 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V e
trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 46A, VDD = 50V
Qrr Reverse Recovery Charge ––– 430 640 nC di/dt = 100A/µs e
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 IRFB4227PbF
1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
BOTTOM 7.0V BOTTOM 7.0V
100
7.0V 100

7.0V

10

10

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1
0.1 1 10 0.1 1 10

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 4.0
ID = 46A

RDS(on) , Drain-to-Source On Resistance

VDS = 25V
≤ 60µs PULSE WIDTH VGS = 10V
ID, Drain-to-Source Current(Α)

100.0 3.0

(Normalized)
TJ = 175°C
10.0 2.0

1.0 TJ = 25°C 1.0

0.1
0.0
3.0 4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

1000 1000
L = 220nH L = 220nH
900 C = 0.4µF C = Variable
100°C 800
100°C
800 25°C 25°C
Energy per pulse (µJ)
Energy per pulse (µJ)

700
600
600

500
400
400

300 200

200

100 0
110 120 130 140 150 160 170 130 140 150 160 170 180 190

VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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 IRFB4227PbF
1400 1000.0
L = 220nH
1200

ISD, Reverse Drain Current (A)

C= 0.4µF
C= 0.3µF 100.0
Energy per pulse (µJ)

1000
C= 0.2µF TJ = 175°C
800

10.0
600

400
1.0
TJ = 25°C
200
VGS = 0V
0
0.1
25 50 75 100 125 150
0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage

8000 20
VGS = 0V, f = 1 MHZ ID= 46A
Ciss = Cgs + Cgd, Cds SHORTED

VGS, Gate-to-Source Voltage (V)

Crss = Cgd
VDS = 160V
16 VDS = 100V
6000 Coss = Cds + Cgd
VDS = 40V
C, Capacitance (pF)

Ciss 12

4000
8

2000
Coss
4

Crss
0
0
0 20 40 60 80 100 120
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

70 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
60
ID, Drain-to-Source Current (A)

1µsec
100
ID , Drain Current (A)

50 100µsec 10µsec

40
10
30

20
1
Tc = 25°C
10
Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TC , CaseTemperature (°C) VDS , Drain-to-Source Voltage (V)

Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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 IRFB4227PbF
600
0.16
()
RDS (on), Drain-to -Source On Resistance Ω

EAS, Single Pulse Avalanche Energy (mJ)

ID = 46A I D
500 TOP 8.6A
14A
0.12 BOTTOM 39A
400

0.08 300

TJ = 125°C
200
0.04
100
TJ = 25°C
0.00 0
5 6 7 8 9 10 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)

Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 200
ton= 1µs
Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)

4.5
160
Half Sine Wave

Repetitive Peak Current (A)

Square Pulse
4.0
ID = 250µA
120
3.5

3.0
80

2.5

40
2.0

1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TJ , Temperature ( °C ) Case Temperature (°C)

Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
1

D = 0.50
Thermal Response ( ZthJC )

0.1 0.20

0.10 R1 R2 R3
R1 R2 R3 Ri (°C/W) τi (sec)
0.05 τJ
τJ
τC
τ
0.08698 0.000074
τ1 τ2 τ3
0.02 τ1 τ2 τ3 0.2112 0.001316
0.01
0.01 Ci= τi/Ri 0.1506 0.009395
Ci i/Ri

Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB4227PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

RD
VDS VDS
90%
V GS
D.U.T.
RG
+
- VDD
10%
10V VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on) tr td(off) tf

Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms
Id
Vds

Vgs

L
VCC
DUT
0 Vgs(th)
1K
S

Qgs1 Qgs2 Qgd Qgodr

Fig 21a. Gate Charge Test Circuit Fig 21b. Gate Charge Waveform
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Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

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IRFB4227PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

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TO-220AB packages are not recommended for Surface Mount Application.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 39A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2007
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