AO4801

30V P-Channel MOSFET

General Description Product Summary

The AO4801 uses advanced trench technology to provide VDS -30V

excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5A
voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) < 48mΩ
a load switch or in PWM applications. It may be used in a
RDS(ON) (at VGS =-4.5V) < 57mΩ
common drain arrangement to form a bidirectional
blocking switch. RDS(ON) (at VGS =-2.5V) < 80mΩ

100% UIS Tested

100% Rg Tested

SOIC-8
D1 D2
Top View Bottom View
SOIC-8
Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1 G2
G1
G1 4 5 D1
S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C -5
ID
Current TA=70°C -4 A
Pulsed Drain Current C IDM -28
Avalanche Current C IAS, IAR 11 A
Avalanche energy L=0.3mH C EAS, EAR 18 mJ
TA=25°C 2
PD W
Power Dissipation B TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

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 AO4801

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 -0.9 -1.3 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -28 A
VGS=-10V, ID=-5A 40 48
mΩ
TJ=125°C 48 60
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3.5A 45 57 mΩ
VGS=-2.5V, ID=-2.5A 60 80 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5A 18 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 645 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 80 pF
Crss Reverse Transfer Capacitance 55 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4 7.8 12 Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 7 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-15V, ID=-5A 1.5 nC
Qgd Gate Drain Charge 2.5 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3Ω, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 41 ns
tf Turn-Off Fall Time 9 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 11 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4801

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
-10V VDS=-5V
25 -4.5V
-3V 15
20

-ID(A)
-ID (A)

15 10 125°C
-2.5V
10
5 25°C
5
VGS=-2V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3

-VDS (Volts) -VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

90 1.8
VGS=-4.5V
Normalized On-Resistance
VGS=-2.5V ID=-3.5A
1.6
70 VGS=-10V
ID=-5A
RDS(ON) (mΩ )

1.4
VGS=-4.5V VGS17
=-2.5V
50
5
ID=-2.5A
1.2 2
30 10
VGS=-10V 1

10 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
18
Gate Voltage (Note E)
(Note E)

100 1.0E+01
ID=-5A
1.0E+00
80 40 125°C
125°C 1.0E-01
RDS(ON) (mΩ )

-IS (A)

60 1.0E-02
25°C
1.0E-03
40 25°C
1.0E-04

20 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4801

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1200
VDS=-15V
ID=-5A 1000
4
Ciss

Capacitance (pF)
800
-VGS (Volts)

3
600
2
400

1 Coss
200 Crss

0 0
0 3 6 9 12 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TJ(Max)=150°C
RDS(ON) 10µs TA=25°C
10.0 limited 1000
100µs
Power (W)
-ID (Amps)

1.0 1ms 100

TJ(Max)=150°C 10ms
TA=25°C 10
0.1 1s
10s
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=90°C/W
1

0.1
PD

Single Pulse Ton

T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4801

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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