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BD135

BD139

NPN SILICON TRANSISTORS

Type

Marking

BD135

BD135

BD135-10

BD135-10

BD135-16

BD135-16

BD139

BD139

BD139-10

BD139-10

BD139-16

BD139-16

STMicroelectronics PREFERRED SALESTYPES

DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140 respectively.

ABSOLUTE MAXIMUM RATINGS

2 1
2 1

3

SOT-32

INTERNAL SCHEMATIC DIAGRAM

INTERNAL SCHEMATIC DIAGRAM

Symbol

Parameter

Value

Unit

BD135

BD139

V

CBO

Collector-Base Voltage (I E = 0)

45

80

V

V

CEO

Collector-Emitter Voltage (I B = 0)

45

80

V

V

EBO

Emitter-Base Voltage (I C = 0)

5

V

 

I

C

Collector Current

1.5

A

I

CM

Collector Peak Current

3

A

 

I

B

Base Current

0.5

A

 

P

tot

Total Dissipation at T c 25 o C

12.5

W

 

P

tot

Total Dissipation at T amb 25 o C

1.25

W

T

stg

Storage Temperature

-65 to 150

o

C

 

T

j

Max. Operating Junction Temperature

150

o

C

September 2001

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BD135 / BD139

THERMAL DATA

R thj-case

Thermal

Resistance

Junction-case

 

Max

 

10

o C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)

 

Symbol

 

Parameter

 

Test Conditions

 

Min.

Typ.

Max.

Unit

I CBO

Collector Cut-off Current (I E = 0)

V CB = 30 V V CB = 30 V

     

0.1

 

A

T C = 125 o C

10

A

I EBO

Emitter Cut-off Current

V EB = 5 V

     

10

 

A

(I

C = 0)

   

V CEO(sus)

Collector-Emitter

I C = 30 mA for BD135

         

Sustaining Voltage

45

 

V

(I

B = 0)

for BD139

80

V

V CE(sat)

Collector-Emitter

I C = 0.5 A

I B = 0.05 A

   

0.5

 

V

Saturation Voltage

   

V

BE

Base-Emitter Voltage

I C = 0.5 A

V CE = 2 V

   

1

 

V

h

FE

DC Current Gain

I C = 5 mA

V CE = 2 V V CE = 2 V V CE = 2 V

 

25

     
 

I C

= 150 mA

40

250

I C = 0.5 A

25

h FE

h FE Groups

I C = 150 mA

V CE = 2 V

       

for BD135/BD139 group-10 for BD135/BD139 group-16

 

63

160

100

250

* Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area

2/4

group-16   63 160 100 250 * Pulsed: Pulse duration = 300 s, duty cycle 1.5

BD135 / BD139

SOT-32 (TO-126) MECHANICAL DATA

DIM.

 

mm

   

inch

 

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

A

7.4

 

7.8

0.291

 

0.307

B

10.5

 

10.8

0.413

 

0.425

b

0.7

 

0.9

0.028

 

0.035

b1

0.40

 

0.65

0.015

 

0.025

C

2.4

 

2.7

0.094

 

0.106

c1

1.0

 

1.3

0.039

 

0.051

D

15.4

 

16.0

0.606

 

0.630

e

 

2.2

   

0.087

 

e3

 

4.4

   

0.173

 

F

 

3.8

   

0.150

 

G

3

 

3.2

0.118

 

0.126

H

   

2.54

   

0.100

H2

 

2.15

   

0.084

 

I

 

1.27

   

0.05

 

O

 

0.3

   

0.011

 

V

 

10

o

   

10

o

 
1: Base 2: Collector 3: Emitter 0016114/B

1: Base

2: Collector

3: Emitter

0016114/B

  V   10 o     10 o   1: Base 2: Collector 3: Emitter

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BD135 / BD139

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics

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