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Fast Recovery DSEI 60 IFAVM = 52 A

Epitaxial Diode (FRED) VRRM = 1200 V


trr = 40 ns

TO-247 AD
VRSM VRRM Type A C

V V
C
1200 1200 DSEI 60-12A A C

A = Anode, C = Cathode

Symbol Test Conditions Maximum Ratings Features

IFRMS TVJ = TVJM 100 A ●


International standard package
IFAVM ÿÿ① TC = 60°C; rectangular, d = 0.5 52 A JEDEC TO-247 AD
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 800 A ●
Planar passivated chips
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 500 A

Very short recovery time
t = 8.3 ms (60 Hz), sine 540 A ●
Extremely low switching losses

Low IRM-values
TVJ = 150°C; t = 10 ms (50 Hz), sine 450 A ●
Soft recovery behaviour
t = 8.3 ms (60 Hz), sine 480 A ●
Epoxy meets UL 94V-0
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1250 A2s
t = 8.3 ms (60 Hz), sine 1200 A2s
Applications
TVJ = 150°C; t = 10 ms (50 Hz), sine 1000 A2s
t = 8.3 ms (60 Hz), sine 950 A2s ●
Antiparallel diode for high frequency
TVJ -40...+150 °C switching devices
TVJM 150 °C ●
Anti saturation diode
Tstg -40...+150 °C ●
Snubber diode

Free wheeling diode in converters
Ptot TC = 25°C 189 W
and motor control circuits
Md Mounting torque 0.8...1.2 Nm ●
Rectifiers in switch mode power
Weight 6 g
supplies (SMPS)

Inductive heating and melting

Uninterruptible power supplies (UPS)
Symbol Test Conditions Characteristic Values ●
Ultrasonic cleaners and welders
typ. max.

IR TVJ = 25°C VR = VRRM 2.2 mA Advantages


TVJ = 25°C VR = 0.8 • VRRM 0.5 mA
TVJ = 125°C VR = 0.8 • VRRM 14 mA ●
High reliability circuit operation

Low voltage peaks for reduced
VF IF = 60 A; TVJ = 150°C 2.0 V
protection circuits
TVJ = 25°C 2.55 V ●
Low noise switching
VT0 For power-loss calculations only 1.65 V ●
Low losses
rT TVJ = TVJM 8.3 mW ●
Operating at lower temperature or
RthJC 0.66 K/W space saving by reduced cooling
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C 40 60 ns
IRM VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms 32 36 A
L £ 0.05 mH; TVJ = 100°C

① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
036

IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-2


DSEI 60, 1200 V

90 12 80
TVJ=100°C TVJ=100°C
A µC A
80 VR= 540V VR=540V
TVJ= 25°C 10 max.
70 TVJ=100°C
60
TVJ=150°C IF=60A IF=60A
60 8 IF=120A IRM IF=120A
IF Qr
50 IF=60A IF=60A
6 IF=30A 40 IF=30A
40

30 4 max. typ.
20
20
2 typ.
10

0 0 0
0 1 2 3 V 4 10 100 A/µs 1000 0 200 400 600 800 1000
A/µs
VF -diF/dt -diF/dt
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.

1.4 1.0 60 1200


TVJ=100°C
µs V ns
1.2 VR=540V
50 1000
0.8
max. VFR
1.0
IF=60A 40 800
Kf IRM trr
0.6 IF=120A VFR tfr
0.8 IF=60A
IF=30A 30 600
0.6
0.4
QR 20 400
0.4
tfr
0.2
0.2 10 200
typ. TVJ=125°C
IF=60A
0.0 0.0 0 0
0 40 80 120 °C 160 0 200 400 600 A/µs
800 1000 0 200 400 600 800 1000
A/µs
TJ -diF/dt diF/dt

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.

Dimensions
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102
Fig. 7 Transient thermal impedance junction to case.

© 2000 IXYS All rights reserved 2-2