application of related to their properties in 1 material related main/supporting components,devices, 3 to their circuits (PCB), modules, equipments and properties in systems of electrical engineering; electrical Student understands the origin of the s engineering; (conductivity) as properties of the material Classification which determine current in relation to based on apllied voltage (electric field) known as (conductivity) : resistance. conductor, Students become knowledgeable to class of semiconductor material related to conducting behavior and insulator. (conductivity) : conductor, insulator Initial (dielectric, semiconductor. 'microscopic' Student will have initial 'microscopic' view view of electrons of electrons travelling affected by potential in sea of potential energy of atomic lattice of material as energy of lattice . unique. 2 Material Crystal Structure, Student understands structure of material : Reference # : Structure parameters : crystal, poly-crystal and amorph ; 1 Lattice constant, Student understands crystal structure in 2 Unit cell : 14 direct lattice and parameters : bases, lattice 3 Bravais system, constant and unit cell. Students will be Miller index knowledgeable of Bravais systems of 14 (reciprocal basic structures. lattice): crystal Students becomes knowledgeable in orientation, indirect (reciprocal) lattice and understand symmetry, plane use of index Miller to derive crystal plane distance, angle of orientation, direction and symmetry. crystal plane Students understand packing fraction and intersection; surface densityof various crystal especially APF (Atomic of Cubic and hexagonal closed pack system. packing fraction), surface density 3 Lattice Lattice Vibration : Understands mechanical-physics lattice Reference # : Vibration collision with (atoms in crystal) vibrating as spring-like - 2 electron; Phonon mechanical wave of atoms; 3 emission : Know the origin of lattice vibration: energy Acoustical and and momentum exhange of collision with Optical phonon, (conducting) electrons. (vibration) wave Comprehend derivation of lattice wave mechanics 1-D equation and mechanism of absorption and Monatomic and emission of phonon (heat in material) in Diatomic either one : acoustical or optical mode. Know how to derive simple 1-D monatomic and diatomic crystal - lattice wave and find Longitudinal and solution : lattice vibrating wave as function transversal of k vibration wave Understand the lattice wave relation to longitudinal and transversal vibration of atoms. 4 Crystal Crystal Bonding : Understands nature of physics of Crystal Reference # : Bonding cohesive energy, Bonding : cohesive energy in lattice as 2 Type of bonding : combination of attractive and repulsive 3 Van der Waals, forces of atom nucleus and valence Ionic bonding, electrons. Covalent bonding, Becomes knowledgeable of type of material Metalic bonding, crystal bonding : Van der Waals, metalic, Hydrogen bond covalent, ionic and Hydrogen bonding and material properties. 5 Energy Band Periodic Comprehends energy potential (band) of Reference # : Model potentials of material element and alloy; 1 crystal lattice : Knowledgeable existence of periodic 2 KronnigPenney potential energy (Kronnig-Penney model) 3 model, Know origin (simplified) Energy Band Model (Simplified Acquiring practical knowledge of the Energy Potential) Energy Band Model and the reference (potential) Band Model : energy levels of the model, from the basic energyi gap (g), knowledge of the properties of electrical Ban Konduksi (conductivity and dielectric) of materials as (C), Ban Valensi conductor, insulators & semiconductor (V), level enerji conductors to concept of electron and hole Intrinsic (i); with potential (energy) levels and their Concept of potential gradient in Energy Band Model, (conducting) Acquire introduction usage of energy band Electron and model of structure of semiconductor Hole. devices. 6 Particle Particle Statistics Students will have introductory knowledge Reference # : Statistics in material of class and application of statistics in 3 (classification) : determining particles and other classical constituents in material and solid state Boltzmann universe such as electron/hole, phonon, statistics; photon and others. Quantum Students will be acquainted derivation of Statistics : Bose- Fermi Dirac statistics using Langrangian Einstein, multiplier. Fermi Dirac (FD) Students will have scientifical-engineering Statistics : view on 'learning - exponential curve' of derivation, governing IV characteristics of diode and Langrangian other other junction devices which is multiplier explained by statistics of carrier population. Fermic Dirac Student posseses practical knowledge of Function Boltzmann and Fermi-Dirac statistics as probability in finding charge/carrier (electron and hole) in material (semiconductor). 7 Density of Density of States Students understand essence of Density of Reference # : States (DOS) states (DOS) as (potential energy) level 1 (DOS), Carrier (electrons clusters for carrier to occupy : electrons in 2 and holes) Conduction band and holes in Valence 3 concentration, band, respectively. Fermi level (eF) in Students will know origin (derivation) DOS energy band equation and its relation to energy model ; (potential) in conduction and valence band of semiconductor material. Students know to derive electron (n) and hole concentration (p) equations thru integration of Fermi Dirac probability ((as fuction of Fermi level = doping level) and density of states as function of energy (of the carrier) in respective band (conduction and valence bands). Students becomes familiar in calculating carrier concentration (electron, n and hole, p) and plot Fermi level (EF) in Energy Band Model. 8 Carrier Carrier Scattering Students understand the scattering process Reference # : Scattering : Lattice and of electron collision in lattice of material : 1 ionized impurity (1) Coulombic scattering (ionized impurity), 3 scattering; Acoustical and Optical Phonon scattering Matthiessen’s Student can describe mobility ( ) related rule : dominant to scattering rate () and effective mass of scattering electron (or hole, m* ); (related to T) Student can figure out combined effect of Mobility () : all scattering mechanisms using conductivity of Matthiessen’s rule and qualitatively material, explains dominant effect of either lattice or scattering rate, impurity scattering according to effective mass; temperature. Mobility relation Understand drift current as result of to temperature existence of electric field (E) and mobility - (T) where electron drift due to electric field Mobility relation overcoming random motion of thermal to electric field drift. (E) Qualitatively able to describe (5) drift speed Saturation as function electric field (E) and saturation velocity (vsat) ; velocity (vsat) above the critical field (ECR) Drift current ; as result of optical phonon scattering. 9 Carrier Carrier Diffusion Student understands diffusion transport of Reference # : Diffusion Process : carrier (electron,hole) in semiconductor 1 Process concentration due to gradient concentration. 3 gradient; relasi Student is able to derive diffusion current Einstein; Diffusion from the gradient concentration and Current Understands Einstein relationship of density;Total diffusion coeffient to electron (hole) current of Drift mobility. and Diffusion Student will have comprehensive knowledge on total current in semiconductor due to Drift and Diffusion of electron and hole. 10 Continuity Continuity Student understands essence of Continuity Reference # : equation, equation, equation which leads to carrier 1 Generation conservation in semiconductor. 3 process : Student becomes knowledgeable in carrier Recombination : Generation - electron-hole pair generation SRH as result of thermal excitation or other Recombination, form energy excitation mechanism such as Surface photo-excitation (due to photon- Recombination illumination), pressure (piezoelectric) and others. 11 P-N Junction Physics of P-N Students are able to explain the physical Reference # : Diode Junction : mechanism of P-N Junction : diffusion of 1 junction diffusion electron and hole accross P-N sides of the 3 process, space- junction, space charge and potential barrier charge (depletion built-up in depletion region. region), potential Students are able to derive current-voltage barrier built-up. (I-V) characteristics of PN Junction Diode. Origin of Diode Students can explain physics of carriers currentvoltage(I- crossing junction barrier when the applied V) Characteristics bias in forward and reverse condition : Relation to depletion region width and junction barrier applied potential increase. (forward and Students can sort out the P-N Junction reverse bias) ; diode current components and Diode current differentiate each origin from diode I-V components characteristics.