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Recommended Substitutions:
For existing customer transition, and for new customers or new appli-
cations, use ACS770xCB or ACS772xCB.
Allegro MicroSystems, LLC reserves the right to make, from time to time, revisions to the anticipated product life cycle plan
for a product to accommodate changes in production capabilities, alternative product availabilities, or market demand. The
information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no respon-
sibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use.
ACS758xCB
Thermally Enhanced, Fully Integrated, Hall-Effect-Based
Linear Current Sensor IC with 100 µΩ Current Conductor
FEATURES AND BENEFITS DESCRIPTION
• Industry-leading noise performance through proprietary The Allegro™ ACS758 family of current sensor ICs provides
amplifier and filter design techniques economical and precise solutions for AC or DC current sensing.
• Integrated shield greatly reduces capacitive coupling Typical applications include motor control, load detection and
from current conductor to die due to high dV/dt signals, management, power supply and DC-to-DC converter control,
and prevents offset drift in high-side, high-voltage inverter control, and overcurrent fault detection.
applications
The device consists of a precision, low-offset linear Hall
• Total output error improvement through gain and offset
circuit with a copper conduction path located near the die.
trim over temperature
Applied current flowing through this copper conduction path
• Small package size, with easy mounting capability
generates a magnetic field which the Hall IC converts into a
• Monolithic Hall IC for high reliability
proportional voltage. Device accuracy is optimized through the
• Ultralow power loss: 100 µΩ internal conductor
close proximity of the magnetic signal to the Hall transducer.
resistance
A precise, proportional output voltage is provided by the
• Galvanic isolation allows use in economical, high-side
low-offset, chopper-stabilized BiCMOS Hall IC, which is
current sensing in high-voltage systems
programmed for accuracy at the factory.
• AEC-Q100 qualified
High-level immunity to current conductor dV/dt and stray
Continued on the next page…
electric fields, offered by Allegro proprietary integrated shield
pe d
Ty ste
te
TÜV America technology, provides low output voltage ripple and low offset
Certificate Number:
U8V 14 05 54214 028 drift in high-side, high-voltage applications.
UL Certified
File No.: E316429 The output of the device has a positive slope (>VCC / 2) when an
increasing current flows through the primary copper conduction
PACKAGE: 5-Pin CB Package path (from terminal 4 to terminal 5), which is the path used
for current sampling. The internal resistance of this conductive
path is 100 µΩ typical, providing low power loss.
The thickness of the copper conductor allows survival of the
device at high overcurrent conditions. The terminals of the
conductive path are electrically isolated from the signal leads
+3.3 or 5 V
1
4 VCC
IP+ CBYP
ACS758 0.1 µF
2
IP GND
CF
5
IP– 3
VIOUT VOUT
RF
Application 1: The ACS758 outputs an analog signal, VOUT ,
that varies linearly with the uni- or bi-directional AC or DC
primary sampled current, IP , within the range specified. CF is
for optimal noise management, with values that depend on
the application.
Typical Application
Selection Guide
Package Primary Sampled Sensitivity
Sens (Typ.) Current TOP
Part Number [1] Current, IP Packing [2]
Terminals Signal Pins Directionality (°C)
(A) (mV/A)
ACS758LCB-050B-PFF-T Formed Formed ±50 40. Bidirectional
ACS758LCB-050U-PFF-T Formed Formed 50 60. Unidirectional
ACS758LCB-100B-PFF-T Formed Formed ±100 20. Bidirectional –40 to 150
ACS758LCB-100B-PSF-T Straight Formed ±100 20. Bidirectional
ACS758LCB-100U-PFF-T Formed Formed 100 40. Unidirectional
ACS758KCB-150B-PFF-T Formed Formed ±150 13.3 Bidirectional
ACS758KCB-150U-PSF-T Straight Formed 150 26.7 Unidirectional 34 pieces
–40 to 125
ACS758KCB-150B-PSS-T Straight Straight ±150 13.3 Bidirectional per tube
ACS758KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional
ACS758ECB-200B-PFF-T Formed Formed ±200 10. Bidirectional
ACS758ECB-200B-PSF-T Straight Formed ±200 10. Bidirectional
ACS758ECB-200U-PSF-T Straight Formed 200 20 Unidirectional –40 to 85
ACS758ECB-200B-PSS-T Straight Straight ±200 10. Bidirectional
ACS758ECB-200U-PFF-T Formed Formed 200 20. Unidirectional
SPECIFICATIONS
ISOLATION CHARACTERISTICS
Characteristic Symbol Notes Rating Unit
Agency type-tested for 60 seconds per
Dielectric Strength Test Voltage [1] VISO 4800 VAC
UL standard 60950-1, 2nd Edition
For basic (single) isolation per UL standard 60950-1, 2nd 990 VDC or Vpk
Working Voltage for Basic Isolation VWFSI
Edition 700 Vrms
For reinforced (double) isolation per UL standard 60950-1, 636 VDC or Vpk
Working Voltage for Reinforced Isolation VWFRI
2nd Edition 450 Vrms
1 Allegro does not conduct 60-second testing. It is done only during the UL certification process.
2 Test was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only.
3 For more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com.
+3.3 to 5 V
IP+ VCC
To all subcircuits
Dynamic Offset
Cancellation
VIOUT
Filter
Amp Out
0.1 µF
Gain Offset
Gain Temperature Offset Temperature
Coefficient Coefficient
Trim Control
IP– GND
COMMON OPERATING CHARACTERISTICS [1]: Valid at TOP = –40°C to 150°C and VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Supply Voltage [2] VCC 3 5.0 5.5 V
Supply Current ICC Output open – 10 13.5 mA
Power-On Delay tPOD TA = 25°C – 10 – µs
IP step = 60% of IP+, 10% to 90% rise time, TA = 25°C,
Rise Time [3] tr – 3 – µs
COUT = 0.47 nF
Propagation Delay Time [3] tPROP TA = 25°C, COUT = 0.47 nF – 1 – µs
Response Time tRESPONSE Measured as sum of tPROP and tr – 4 – µs
Internal Bandwidth [4] BWi –3 dB; TA = 25°C, COUT = 0.47 nF – 120 – kHz
Output Load Resistance RLOAD(MIN) VIOUT to GND 4.7 – – kΩ
Output Load Capacitance CLOAD(MAX) VIOUT to GND – – 10 nF
Primary Conductor Resistance RPRIMARY TA = 25°C – 100 – µΩ
Symmetry [3] ESYM Over half-scale of IP 99 100 101 %
VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25°C – VCC/2 – V
Quiescent Output Voltage [5] Unidirectional variant, IP = 0 A, TA = 25°C, VIOUT(QUNI) is
VIOUT(QUNI) – 0.6 – V
ratiometric to VCC
Ratiometry [3] VRAT VCC = 4.5 to 5.5 V – 100 – %
X050B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP –50 – 50 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 40 – mV/A
Sens(TOP)
Full scale of IP applied for 5 ms, TOP = 25°C to 150°C – 39.4 – mV/A
Sensitivity HT
Sens(TOP)
Full scale of IP applied for 5 ms,TOP = –40°C to 25°C – 41 – mV/A
LT
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 10 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C – ±15 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±35 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 100 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 150°C – –1.2 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 2 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4 Percentage of I . Output filtered.
P
X050U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 – 50 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 60 – mV/A
Sens(TOP)
Full scale of IP applied for 5 ms, TOP = 25°C to 150°C – 59 – mV/A
Sensitivity HT
Sens(TOP)
Full scale of IP applied for 5 ms,TOP = –40°C to 25°C – 61 – mV/A
LT
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 15 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C – ±20 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±40 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 100 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 150°C – –1.2 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 2 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4 Percentage of I . Output filtered.
P
X100B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP –100 – 100 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 20 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 150°C – 19.75 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 20.5 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1.25 – 1.25 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C – ±20 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±20 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 150 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 150°C – –1.3 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 2.4 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4 Percentage of I . Output filtered.
P
X100U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 150°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 – 100 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 40 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 150°C – 39.5 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 41 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 12 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1.25 – 1.25 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C – ±20 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±20 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 150 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 150°C – –1.3 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 2.4 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4 Percentage of I . Output filtered.
P
X150B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP –150 – 150 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 13.3 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 125°C – 13.1 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 13.5 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 4 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C – ±14 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±24 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 205 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 125°C – –1.8 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 1.6 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V.
4 Percentage of I . Output filtered.
P
X150U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 125°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 – 150 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 26.6 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 125°C – 26.6 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 27.4 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 8 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C – ±14 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±24 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 205 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 125°C – –1.8 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 1.6 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V.
4 Percentage of I . Output filtered.
P
X200B PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 85°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP –200 – 200 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 10 – mV/A
Sensitivity Sens(TOP)HT Full scale of IP applied for 5 ms, TOP = 25°C to 85°C – 9.88 – mV/A
Sens(TOP)LT Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 10.13 – mV/A
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 3 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3][ VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C – ±15 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±25 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 230 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 85°C – –1.2 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 1.2 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 2.5 V .
4 Percentage of I . Output filtered.
P
X200U PERFORMANCE CHARACTERISTICS [1]: TOP = –40°C to 85°C, VCC = 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Primary Sampled Current IP 0 – 200 A
SensTA Full scale of IP applied for 5 ms, TA = 25°C – 20 – mV/A
Sens(TOP)
Full scale of IP applied for 5 ms, TOP = 25°C to 85°C – 19.7 – mV/A
Sensitivity HT
Sens(TOP)
Full scale of IP applied for 5 ms, TOP = –40°C to 25°C – 20.3 – mV/A
LT
Noise [2] VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV
Nonlinearity ELIN Up to full scale of IP , IP applied for 5 ms –1 – 1 %
VOE(TA) IP = 0 A, TA = 25°C – ±5 – mV
Electrical Offset Voltage [3] VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C – ±20 – mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C – ±35 – mV
Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 230 – mA
ETOT(HT) Over full scale of IP , IP applied for 5 ms, TOP = 25°C to 85°C – –1.2 – %
Total Output Error [4]
ETOT(LT) Over full scale of IP , IP applied for 5 ms, TOP = –40°C to 25°C – 1.2 – %
1 See Characteristic Performance Data page for parameter distributions over temperature range.
2 ±3sigma noise voltage.
3V
OE(TOP) drift is referred to ideal VIOUT(Q) = 0.6 V .
4 Percentage of I . Output filtered.
P
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
30 42.0
20 42.5
10
Sens (mV/A)
41.0
0
VOE (mV)
40.5
-10
40.0
-20
39.5
-30
-40 39.0
-50 38.5
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0.25 100.20
0.20 100.15
0.15 100.10
0.10 100.05
0.05 100.00
0 99.95
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
140 6
5
120
4
100 3
2
IERROM (mA)
80
ETOT (%)
1
60 0
40 -1
-2
20
-3
0 -4
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
25 21.2
20 21.0
15 20.8
Sens (mV/A)
10 20.6
VOE (mV)
5 20.4
0 20.2
-5 20.0
-10 19.8
-15 19.6
-20 19.4
-25 19.2
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
0.30 100.4
100.3
0.25
ESYM (%)
ELIN (%)
100.2
0.20
100.1
0.15
100.0
0.10 99.9
0.05 99.8
0 99.7
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
200 6
190 5
4
180
3
170 2
IERROM (mA)
160 1
ETOT (%)
150 0
130 -1
-2
120
-3
110 -4
100 -5
–50 -25 0 25 50 75 100 125 150 –50 -25 0 25 50 75 100 125 150
TA (°C) TA (°C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
20 14.0
15
13.8
10
Sens (mV/A)
5 13.6
VOE (mV)
0 13.4
-5
-10 13.2
-15 13.0
-20
12.8
-25
-30 12.6
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TA (°C) TA (°C)
100.3
0.15
100.2
0.10 100.1
100.0
0.05
99.9
0 99.8
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
300 5
4
250 3
2
200
1
IERROM (mA)
0
ETOT (%)
150
-1
100 -2
-3
50 -4
-5
0 -6
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TA (°C) TA (°C)
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
25 10.4
20 10.3
15
10.2
Sens (mV/A)
10
10.1
5
VOE (mV)
0 10.0
-5 9.9
-10 9.8
-15
9.7
-20
-25 9.6
-30 9.5
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TA (°C) TA (°C)
0.06
100.2
0.04
0.02 100.0
0
-0.02 99.8
-0.04
-0.06 99.6
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TA (°C) TA (°C)
Magnetic Offset Error versus Ambient Temperature Total Output Error versus Ambient Temperature
350 4
3
300
2
250 1
0
IERROM (mA)
200
ETOT (%)
-1
150 -2
100 -3
-4
50
-5
0 -6
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TA (°C) TA (°C)
Timing Data
2.988 µs 997 ns
t (2 µs/div.) t (2 µs/div.)
VCC
IP (20 A/div.)
VIOUT (1 V/div.)
(IP = 60 A DC)
3.960 µs
t (2 µs/div.) t (2 µs/div.)
CHARACTERISTIC DEFINITIONS
{ [
100 1–
∆ gain × % sat ( VIOUT_half-scale amperes –VIOUT(Q) )
2 (VIOUT_quarter-scale amperes – VIOUT(Q) ) [{ 0.1 × VCC for unidirectional devices, due to nonmagnetic causes.
Magnetic offset error (IERROM). The magnetic offset is due to
where the residual magnetism (remnant field) of the core material. The
magnetic offset error is highest when the magnetic circuit has
∆ gain = the gain variation as a function of temperature changes been saturated, usually when the device has been subjected to a
from 25°C, full-scale or high-current overload condition. The magnetic offset
% sat = the percentage of saturation of the flux concentra- is largely dependent on the material used as a flux concentrator.
tor, which becomes significant as the current being sampled The larger magnetic offsets are observed at the lower operating
temperatures.
approaches half-scale ±IP , and
VIOUT_half-scale amperes = the output voltage (V) when the sampled Total Output Error (ETOT). The maximum deviation of the
current approximates half-scale ±IP . actual output from its ideal value, also referred to as accuracy,
illustrated graphically in the output voltage versus current chart
Symmetry (ESYM). The degree to which the absolute voltage on the following page.
output from the IC varies in proportion to either a positive or ETOT is divided into four areas:
negative half-scale primary current. The following equation is
• 0 A at 25°C. Accuracy at the zero current flow at 25°C,
used to derive symmetry: without the effects of temperature.
VIOUT_+ half-scale amperes – VIOUT(Q) • 0 A over Δ temperature. Accuracy at the zero current flow
100 including temperature effects.
VIOUT(Q) – VIOUT_–half-scale amperes
• Half-scale current at 25°C. Accuracy at the the half-scale
Ratiometry. The device features a ratiometric output. This current at 25°C, without the effects of temperature.
means that the quiescent voltage output, VIOUTQ, and the mag- • Half-scale current over Δ temperature. Accuracy at the half-
netic sensitivity, Sens, are proportional to the supply voltage, VCC. scale current flow including temperature effects.
90 Accuracy
25°C Only
Bidirectional
Average
Transducer Output VIOUT
10
0 Accuracy
t Over ∆Temp erature
Rise Time, tr
Accuracy
Propagation delay (tPROP). The time required for the device IP(min)
25°C Only
Half Scale
package, as well as in the inductive loop formed by the primary IP(max)
Unidirectional
Average
VIOUT
Accuracy
Over ∆Temp erature
Accuracy
25°C Only
Full Scale
0A IP(max)
Decreasing VIOUT(V)
Regulator
Clock/Logic
Low-Pass
Hall Element
Filter
Sample and
Anti-aliasing
Hold
Filter
Amp
5 4
Ø 0.5 B
3 4
17.5 ±0.2
21.4
13.00 ±0.10
Branded
Face
4.40 ±0.10
Ø 0.8
NNNNNNN
7.00 ±0.10 TTT-AAA
LLLLLLL
A Dambar removal intrusion
B Perimeter through-holes recommended YYWW
14.0 ±0.2
4.0 ±0.2
3.0 ±0.2
∅ 0.8
5 4 ∅ 1.5
1.50 ±0.10
1.91
23.50 ±0.5
NNNNNNN
TTT-AAA
13.00 ±0.10
7.00 ±0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
14.0 ±0.2
4.0 ±0.2
3.0 ±0.2
5 4
1.50 ±0.10
2.75 ±0.10
A NNNNNNN
TTT-AAA
23.50 ±0.5
LLLLLLL
13.00 ±0.10
YYWW
10.00 ±0.10
7.00 ±0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
Revision History
Number Date Description
8 January 17, 2014 Update features list and product offering.
9 April 7, 2015 Updated TUV certification and reformatted document.
10 November 17, 2016 Updated PCB Layout Reference View in Package Outline Drawing on page 19.
11 June 5, 2017 Updated product status
12 June 1, 2018 Updated recommended substitutions
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