ECE 3221: Digital Integrated Circuits

MOS Des & Mod

Lei Wang
Fall 2016

06-1
 Long-Channel MOS Equations
mode drain current equation voltage conditions

cutoff ID  0 VGS  VTN   0

n-MOS
W 
I D   n C ox VGS  VTN VDS  VDS  VGS  VTN 
VDS
2
linear 
L 2 

W VGS  VTN  0  VGS  VTN   VDS

2
saturation I D   n C ox
L 2

mode drain current equation voltage conditions

cutoff ID  0 VGS  VTP   0

p-MOS
 V 
VGS  VTP VDS  VDS  VGS  VTP 
W
I D    p Cox
2
linear 
DS
L  2 

W VGS  VTP 
0  VGS  VTP   VDS
2
saturation I D    p Cox 06-2
L 2
MOS Transistor
• Cutoff region

S D

• Linear region
S D

• Saturated region

S D
06-3
Secondary Effects
• Body effect
• Channel-length modulation
• Subthreshold leakage
• Short channel effect
• etc.

06-4
 Body Effect

VT  VT 0   (  2 F  VSB  2 F )

kT  N A 
F  ln 
q  ni 

• We assumed that VSB=0, i.e., the source

potential equals the substrate potential
• In certain situations, this assumption is not true
• Net effect is raising the threshold voltage
06-5
Channel-Length Modulation
• We previously assumed a constant L
• In reality, when VDS > (VGS-VT), the
channel is pinched off and the effective
channel length is reduced.
• Net effect is that IDS is not constant in
the saturated region.

06-6
 Channel Length Modulation (CLM)

linear
 
I D  K VGS  VT VDS  1  VDS , VGS  VT and VGS  VT   VDS
VDS
2

 2 

saturation

ID 
K
VGS  VT 2 1  VDS ; VGS  VT and VGS  VT   V DS
2
06-7
 Channel-Length Modulation
-4
x 10
2.5

VGS= 2.5 V

VGS= 2.0 V
1.5

Linear
IDS (A)

1
VGS= 1.5 V Relationship

0.5 VGS= 1.0 V

0
0 0.5 1 1.5 2 2.5
VDS (V) 06-8
nMOS Transistor
• Cutoff region (VGS<VT)

S D

• Linear region (VGS>VT, VDS<VGS-VT)

S D

• Saturated region (VGS>VT, VDS>VGS-VT)

S D 06-9
channel-length modulation
Subthreshold Current

10
-2

-4
10

10
-6
ID ~ IS e (qVgs/nkT)
where n  1
ID (A)

10
-8

Exponential
10
-10

-12 VT
10
0 0.5 1 1.5 2 2.5
VGS(V)

06-10
Short Channel Effect
• At small gate lengths, electric field
becomes more pronounced
• Electrons get excited with enough energy
to cause a substrate current
• This causes change of transistor
parameters - threshold voltage, current
flow, etc.

06-11
Short-Channel Effect (SCE)
L

gate

n+ source Wdm n+ drain

WS
L' WD

qN a tox L' L Wdm qN a tox WS  WD Wdm

VT  
2 L ox 2 L ox

06-12
 Carrier Velocity Saturation
10 8
Si 300K

E
carrier drift velocity (cm/s)

v
electrons
10 7
holes   E 
n 1 / n
1    
10 6   v sat  


10 5
10 2 10 3 10 4 10 5 10 6
electric field intensity (V/cm)

06-13
 Short-Channel MOS Operation

2VGS  VTN 
VDSAT 
1  1  2  n VGS  VTN  / v satn L 

linear
 n C ox W / L VGS  VTN VDS  VDS2 / 2
ID 
1   nVDS / v satn L 
saturation
1  2  n VGS  VTN  / v satn L   1
I D  C oxWv satn VGS  VTN 
1  2  n VGS  VTN  / v satn L   1
06-14
 Long- and Short-Channel n-MOSFETS
500 1000

400 800

300 600
ID (  A)

ID (  A)
200 400

100 200

0 0
0 0.5 1 1.5 2 0 0.5 1 1.5 2
VDS (V) VDS (V)

The long-channel equations overestimate the drain current and the

drain-to-source voltage for saturation.
06-15
 Performance
Characterization
• Gate delay
• Voltage versus Time curve

06-16
ECE 3421 Lei Wang
Lecture 5 ECE, UConn
 Delay Definitions

06-17
ECE 3421 Lei Wang
Lecture 5 ECE, UConn
 MOS device capacitances

06-18
ECE 3421 Lei Wang
Lecture 5 ECE, UConn
 MOS device capacitances

06-19
ECE 3421 Lei Wang
Lecture 5 ECE, UConn