Electronic Devices and Circuit Theory 10th Ed Boylestad Chapter 3 PDF

Chapter 3:
Bipolar Junction Transistors

Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp
The terminals are labeled:

• E - Emitter
• B - Base
• C - Collector
npn
Electronic Devices and Circuit Theory, 10/e 2 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Transistor Operation
With the external sources, VEE and VCC, connected as shown:
• The emitter-base junction is forward biased

• The base-collector junction is reverse biased
Currents in a Transistor
Emitter current is the sum of the collector and

base currents:
IE = IC + IB
The collector current is comprised of two

currents:
IC = IC + I CO
majority minority
Common--Base Configuration
Common
The base is common to both input (emitter–base) and

output (collector–base) of the transistor.
Common--Base Amplifier
Common
Input Characteristics
This curve shows the relationship

between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.
Common--Base Amplifier
Common
Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).
Operating Regions
• Active – Operating range of the

amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.
Approximations
Emitter and collector currents:
I ≅ I
C E
Base-emitter voltage:
VBE = 0.7 V (for Silicon)
(α )
Alpha (α
Alpha (α) is the ratio of IC to IE :

IC
αdc =
IE
Ideally: α = 1
In reality: α is between 0.9 and 0.998
Alpha (α) in the AC mode:

mode
∆I C
αac =
∆I E
Transistor Amplification
Currents and Voltages: Voltage Gain:

V 200mV VL 50V
I E = Ii = i = = 10mA Av = = = 250
Ri 20Ω Vi 200mV
I ≅I
C E
I ≅ I = 10 mA
L i
V = I R = (10 ma )(5 kΩ) = 50 V
L L
Common––Emitter Configuration
Common
The emitter is common to both input

(base-emitter) and output (collector-
emitter).
The input is on the base and the

output is on the collector.
Common--Emitter Characteristics
Common
Collector Characteristics Base Characteristics
Common--Emitter Amplifier Currents
Common
Ideal Currents
IE = IC + IB IC = α IE
Actual Currents
IC = α IE + ICBO where ICBO = minority collector current
ICBO is usually so small that it can be ignored, except in high

power transistors and in high temperature environments.
When IB = 0 µA the transistor is in cutoff, but there is some minority

current flowing called ICEO.
ICBO
ICEO = I B =0 µA
1− α
Beta (β)
β represents the amplification factor of a transistor. (β is
sometimes referred to as hfe, a term used in transistor modeling
calculations)
In DC mode:
IC
β dc =
IB
In AC mode:
∆ IC
β ac = VCE = constant
∆ IB
(β )
Beta (β
Determining β from a Graph
(3.2 mA − 2.2 mA)

β AC =
(30 µA − 20 µA)
1 mA
= V = 7.5
10 µA CE
= 100
2.7 mA
β DC = V CE = 7.5
25 µ A
= 108
(β )
Beta (β
Relationship between amplification factors β and α
β α
α= β=
β+1 α −1
Relationship Between Currents
I C = βIB I E = (β + 1)I B
Common–
Common –Collector Configuration
The input is on the

base and the output is
on the emitter.
Common–
Common –Collector Configuration
The characteristics are

similar to those of the
common-emitter
configuration, except the
vertical axis is IE.
Operating Limits for Each Configuration
VCE is at maximum and IC is at

minimum (ICmax= ICEO) in the cutoff
region.
IC is at maximum and VCE is at

minimum (VCE max = VCEsat = VCEO) in
the saturation region.
The transistor operates in the active

region between saturation and cutoff.
Power Dissipation
Common-base:
PCmax = VCB I C
Common-emitter:
PCmax = VCE I C
Common-collector:
PCmax = VCE I E
Transistor Specification Sheet
Transistor Specification Sheet
Transistor Testing
• Curve Tracer
Provides a graph of the characteristic curves.
• DMM
Some DMMs measure βDC or hFE.
• Ohmmeter
Transistor Terminal Identification

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Chapter 3:

Bipolar Junction Transistors

The terminals are labeled:

• The emitter-base junction is forward biased

Emitter current is the sum of the collector and

The collector current is comprised of two

The base is common to both input (emitter–base) and

This curve shows the relationship

• Active – Operating range of the

Emitter and collector currents:

VBE = 0.7 V (for Silicon)

Alpha (α) is the ratio of IC to IE :

Alpha (α) in the AC mode:

Currents and Voltages: Voltage Gain:

The emitter is common to both input

The input is on the base and the

Collector Characteristics Base Characteristics

IC = α IE + ICBO where ICBO = minority collector current

ICBO is usually so small that it can be ignored, except in high

When IB = 0 µA the transistor is in cutoff, but there is some minority

(3.2 mA − 2.2 mA)

Relationship between amplification factors β and α

Relationship Between Currents

The input is on the

The characteristics are

VCE is at maximum and IC is at

IC is at maximum and VCE is at

The transistor operates in the active

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