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ρ = 3.4 × 105 Ω-cm
(silicon)
This
is
a
very
large
resistivity
–
not
as
large
as
an
insulator,
but
very
large
for
a
semiconductor.
Intrinsic
Ge
is
fairly
conductive!
This
happens
because
the
mobilities
are
higher,
but
mostly
because
the
bandgap
is
much
lower,
so
the
intrinsic
carrier
concentration
is
much
larger.
For
GaAs:
1
ρ= Ω-cm
(
ni q µ n + µ p )
From
Fig.
3.5,
p.
80
of
SDF
for
GaAs:
cm 2 cm 2
µ n ≈ 8500
µ p ≈ 430
V-s V-s
From
Fig.
2.20,
p.
54
of
SDF
for
Ge:
ni ( 300 K ) = 2.25 × 106 cm -3
1
ρ= = 3.1× 108 Ω-cm
2.25 × 10 × 1.6 × 10 × (8500 + 430 )
6 −19
ρ = 3.1× 10 Ω-cm
(GaAs)
8
Intrinsic
GaAs
has
a
resistivity
that
is
orders
of
magnitude
larger
than
Si!
This
happens
even
though
the
electron
mobility
is
much
larger
than
Si
because
the
bandgap
is
much
larger,
so
the
intrinsic
carrier
concentration
is
orders
of
magnitude
smaller.
Solution:
( E − E ( x ))
4a)
The
carrier
densities,
n(x),
and
p(x)
vs.
position
follow
from
n ( x ) = ni e F i
k BT
( E ( x )− EF ) kBT .
and
p ( x ) = ni e i
4c)
The
electric
field
E
vs.
position
(is
proportional
to
the
slope
of
EC ( x ) ,
or
EV ( x ) ,
or
Ei ( x ) .
5)
For
the
energy
band
diagram
sketched
below,
answer
the
following
questions.
5a)
Sketch
the
electrostatic
potential,
V ( x ) ,
vs.
position,
x.
5b)
Sketch
the
electric
field,
E ( x ) ,
vs.
position,
x.
5c)
Sketch
the
electron
density,
n ( x )
vs.
position,
x.
5d)
Sketch
the
hole
density,
p ( x ) ,
vs.
position,
x.
5b)
Sketch
the
electric
field,
E ( x ) ,
vs.
position,
x.
5d)
Sketch
the
hole
density,
p ( x ) ,
vs.
position,
x.