G.H.

RAISONI COLLEGE OF ENGINEERING AND MANAGEMENT, AMRAVATI

Department of Electronics & Telecommunication Engineering
Academic Session: Summer- 2018
Unit Test - I
SUBJECT: Power Electronics & Drives SEMESTER: V

TIME: 1 Hours MAX MARKS: 20 Marks

Q. No. Solve any FOUR, each carries 5 Marks MARKS

1. Explain the characteristics of SCR. 5

2. Describe the working of DIAC with neat characteristics. 5

3. Explain any two methods for Turing ON SCR. 5

4. In two transistor analogy of SCR, calculate the Anode current when the gain of T1 is 0.3, 5
gain of T2 is 0.4 with respect to Gate current if 60 MA.

5. Explain two transistor analogy of SCR with diagram using expression. 5

6. Explain four states of SCR. 5

G.H.RAISONI COLLEGE OF ENGINEERING AND MANAGEMENT, AMRAVATI

Department of Electronics & Telecommunication Engineering
Academic Session: Summer- 2018
Unit Test - I
SUBJECT: Power Electronics & Drives SEMESTER: V

TIME: 1 Hours MAX MARKS: 20 Marks

Q. No. Solve any FOUR, each carries 5 Marks MARKS

1. Explain the characteristics of SCR. 5

2. Describe the working of DIAC with neat characteristics. 5

3. Explain any two methods for Turing ON SCR. 5

4. In two transistor analogy of SCR, calculate the Anode current when the gain of T1 is 0.3, 5
gain of T2 is 0.4 with respect to Gate current if 60 MA.

5. Explain two transistor analogy of SCR with diagram using expression. 5

6. Explain four states of SCR. 5