EE 612 Home Assignment No. 3 Nov.

08, 2009
Solutions to copy point on Nov. 11, 2009. Quiz 3 on Nov. 12, 2009.
1. Calculate the time dependence of the excess electron density ∆n(t) in an n-type semiconductor (no>>po), where no
and po are the equilibrium carrier concentrations. Upon the sudden removal of the external generation stimulus
(rate= Gext) at time t=0, where the generation rate ∆n(0) >> no. Assume that direct band-to-band transitions are the
only recombination mechanisms. [ Let B be the recombination constant]
2. An uncoated Double Heterostructure-P+−N−−N+ photodiode has a 0.5µm N− region of absorption coefficient of
αa=106 m−1. The refractive index of the material is 4.0 and the internal quantum efficiency can be assumed to be
80%. What is the external efficiency of the Photodiode ?
3. In a homojunction PIN photodiode of intrinsic region width Wd if the photons are absorbed uniformly
throughout the intrinsic region, the time dependent electron and the hole currents are given by :
q N o ve q N o vh
ie (t) = 1- t for (0 < t < τe ), and ih (t) = 1- t for (0 < t < τh )
Wd τe Wd τh
respectively, where q is the electronic charge, ve and vh are the electron and hole velocities, τe and τh the
transit times and No is the total number of absorbed photons. From the two expressions of current given
above show that the sum-total of the external photocurrent is given by Σ Iph = qNo.
If the photodiode of Wd=1 µm is illuminated with a photon impulse at time t=0 and the electron and
hole velocities are 2×105 m.s−1 and 1×104 m.s−1 respectively, at what time will the external photocurrent
be entirely due to holes ? Call this time T. What fraction of the total current at t=0 is the current at this
time T?
4. An incoherent detection system uses a PIN photodiode of responsivity (R) = 0.52 A/W at λ=1.55µm. The detector
operates at 300oK with a dark current iD=1nA and when connected to a load resistance of 50Ω the operational
bandwidth is B=6MHz. Assuming that the incident power is given byP = P + P Cos(ω t) and that the background
i o m m
radiation can be neglected, find:
(a) Po required such that the mean square current due to shot noise is twice as strong as that due to iD.
(b) Po required such that the mean square current due to shot noise is twice as that due to thermal noise.
(c) Assuming Po= Pm, plot the signal-to-noise ratio (SNR) for 1mW > Po > 1nW.

5. A load resistance RL of 100Ω is connected to a PIN detector of responsivity 0.4 A/W at a wavelength of 1.0µm and
dark current of 1.0nA. Assuming the equivalent load resistance (including the diode resistance and the input
resistance of the amplifier) ≅ RL, calculate the NEP of the detector. What is the minimum detectable power if the
operational bandwidth of the photodiode is 250 MHz ?
6. An avalanche Photodiode has ηext=0.62 at λ=1.0µm, a dark current of 10pA at 100V bias, α/β=0.85, multiplication
factor M=30 and a noise equivalent bandwidth of 10GHz. If a signal of 1.0mW is incident on the detector, calculate
the current SNR. If the bias is changed to 250V then the dark current, the α/β, and the multiplication factor changes
to 100pA, 0.02, and 250, respectively. What is the change in the SNR ?
7. A Silicon avalanche photodiode (APD) has an absorption region Wa=2.5µm, β /α=0.05, ionization coefficient of
α=106 m−1, and the saturated velocity of electrons (ve)=105 m.s−1. Assuming that the ionization is initiated by the
electrons, estimate the 3dB bandwidth of the avalanche process.
8. Consider the following structure for the fabrication of a SAM-APD to work at λ = 1.55 µm.

InP n- In 0.53 Ga 0.47 As Graded Band Gap n- InP InP

InGaAsP n- 10 15 -3
n+ 15 -3 /cm p+
10 /cm 10 15 /cm-3
-3
10 20 /cm 1.0 µm 0.5 µm 10 20 /cm
-3
0.5 µm

20 -3
5 nm n+ 10 /cm
(a) Draw the band structure (with the Fermi levels aligned) and the electric field profile with proper emphasis on the
demarcations of the different layers used. (b) Identify the absorption and the multiplication regions.(c) Which carrier
essentially initiates the multiplication process ? (d) For high speed operation, light should be incident for which side ?