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Reliable Operation D D
Improved Ruggedness S
G D
l Repetitive Avalanche Capability for Robustness G
and Reliability
S TO-247AC
G D S
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 210 mJ
EAR Repetitive Avalanche Energy c ––– 36 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 300 ––– V
IAS Avalanche Currentd ––– 35 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 57 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 230 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V e
trr Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = 35A, VDD = 50V
Qrr Reverse Recovery Charge ––– 820 1230 nC di/dt = 100A/µs e
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IRFP4332PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)
5.5V
10
5.5V 10
1000 3.5
ID = 35A
100
TJ = 175°C
2.5
10
(Normalized)
2.0
1 TJ = 25°C 1.5
1.0
0.1
VDS = 25V
0.5
≤ 60µs PULSE WIDTH
0.01
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
1000 1000
L = 220nH L = 220nH
C = 0.3µF C = Variable
100°C 800
100°C
800
25°C 25°C
Energy per pulse (µJ)
Energy per pulse (µJ)
600 600
400 400
200 200
0 0
150 160 170 180 190 200 100 110 120 130 140 150 160 170
VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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IRFP4332PbF
1400 1000
L = 220nH
1200
C= 0.3µF
1000
TJ = 175°C
800
10
600
400
1
TJ = 25°C
200
VGS = 0V
0 0.1
25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C) VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage
10000 20
VGS = 0V, f = 1 MHZ ID= 35A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 200V
Ciss 12
6000
4000 8
Coss
4
2000
Crss
0
0
0 40 80 120 160
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
50 1µsec
ID, Drain-to-Source Current (A)
100 100µsec
ID, Drain Current (A)
40 10µsec
30 10
20
1
10 Tc = 25°C
Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TJ , Junction Temperature (°C) VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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IRFP4332PbF
1000
0.40
()
ID = 35A I D
TOP 8.3A
800 13A
0.30 BOTTOM 35A
600
0.20
400
0.10
TJ = 125°C
200
TJ = 25°C
0.00 0
5 6 7 8 9 10 25 50 75 100 125 150 175
Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 180
ton= 1µs
160 Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)
100
3.0
80
60
2.0
40
20
1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20
0.10 R1
R1
R2
R2
R3
R3 Ri (°C/W) τι (sec)
τJ
0.05 τJ τC
τ 0.069565 0.000074
τ1 τ2 τ3
τ1 τ2 τ3
0.172464 0.001546
0.01 0.02 Ci= τi/Ri
0.01 Ci= τi/Ri 0.178261 0.019117
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
Ripple ≤ 5% ISD
* Use P-Channel Driver for P-Channel Measurements *** VGS = 5V for Logic Level Devices
** Reverse Polarity for P-Channel
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
+
V
D.U.T. - DS
VGS Vgs(th)
3mA
IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform
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IRFP4332PbF
A
RG PULSE A
C
DRIVER
PULSE B
VCC
B
Ipulse
RG
DUT
tST
Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms
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IRFP4332PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFP4332PbF
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 ,5)3(
Lead Assignments
1- Gate
2- Drain
3- Source
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.35mH, RG = 25Ω, IAS = 35A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1µsec.
Applicable to Sustain and Energy Recovery applications.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2009
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