6N135,6N136

TOSHIBA Photocoupler GaAℓAs Ired & Photo IC

6N135, 6N136
Digital Logic Isolation.
Unit in mm
Line Receiver.
Power Supply Control
Switching Power Supply
Transistor Inverter

The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a
one chip photo diode−transistor.
Each unit is 8−lead DIP package.

· Isolation voltage: 2500Vrms (min.)

· High speed: tpHL, tpLH = 0.5µs (typ.) (RL = 1.9kΩ)
· TTL compatible
· If base pin is open, output signal will be noisy by environmental
condition. For this base, TLP550 is suitable TOSHIBA 11−10C4
· UL recognized: UL1577, file no. E67349
Weight: 0.54g

Pin Configurations
1 8
2 7
3 6
4 5

1 : N.C.
2 : ANODE
3 : CATHODE
4 : N.C.
5 : EMITTER
6 : COLLECTOR
7 : BASE, ANODE
8 : CATHODE

ICC
8 VCC
IF IB
7 VB
VF 2 IO
6 VO
3
5 GND

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Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current (Note 1) IF 25 mA

Pulse forward current (Note 2) IFP 50 mA
LED

Total pulse forward current (Note 3) IFPT 1 A

Reverse voltage VR 5 V
Diode power dissipation (Note 4) PD 45 mW
Output current IO 8 mA
Peak output current IOP 16 mA
Emitter-base reverse voltage (pin 5-7) VEB 5 V
Detector

Supply voltage VCC -0.5~15 V

Output voltage VO -0.5~15 V
Base current (pin 7) IB 5 mA
Output power dissipation (Note 5) Po 100 mW
Operating temperature range Topr -55~100 °C
Storage temperature range Tstg -55~125 °C
Lead solder temperature (10s) (Note 6) Tsol 260 °C
Isolation voltage (Note 7) BVS 2500 Vrms

(Note 1) Derate 0.8mA above 70°C.

(Note 2) 50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1µs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.
(Note 7) R.H. ≤ 60%, AC / 1min.

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Electrical Characteristics
Over Recommended Temperature (Ta = 0°C~70°C unless otherwise noted)

Characteristic Symbol Test Condition Min. (**)Typ. Max. Unit

6N135 IF = 16mA, VO = 0.4V 7 18 ― %

CTR
VCC = 4.5V, Ta = 25°C (Note 8)
Current transfer 6N136 19 24 ― %
ratio 6N135 5 13 ― %
IF = 16mA, VO = 0.5V
CTR
6N136 VCC = 4.5V (Note 1) 15 21 ― %
IF = 16mA, IO = 1.1mA
6N135 ― 0.1 0.4 V
Logic low output VCC = 4.5V
VOL
voltage IF = 16mA, IO = 2.4mA
6N136 ― 0.1 0.4 V
VCC = 4.5V
IF = 0mA, VO = VCC = 5.5V
― 3 500 nA
Ta = 25°C
IOH
Logic high output current IF = 0mA, VO = VCC = 15V
― 0.1 1 mA
Ta = 25°C
IOH IF = 0 mA, VO = VCC = 15V ― ― 50 mA
IF = 16mA, VO = open
Logic low supply current ICCL ― 40 ― mA
VCC = 15V
IF = 0mA, VO = open
ICCH ― 0.01 1 mA
VCC = 15V, Ta = 25°C
Logic high supply current
IF = 0mA, VO = open
ICCH ― ― 2 mA
VCC = 15V
Input forward voltage VF IF = 16mA, Ta = 25°C ― 1.65 1.7 V
Temperature coefficient of
∆VF / ∆Ta IF = 16mA ― -1.9 ― mV / °C
forward voltage
Input reverse breakdown
BVR IR = 10µA, Ta = 25°C 5 ― ― V
voltage
Input capacitance CIN f = 1MHz, VF = 0 ― 60 ― pF
VI-O = 500V (Note 9) 12
Resistance (input-output) RI-O ― 10 ― Ω
R.H. ≤ 60%
Capacitance (input-output) CI-O f = 1MHz (Note 9) ― 0.6 ― pF
Transistor DC current gain hFE VO = 5V, IO = 3mA ― 80 ― ―

(**) All typicals at Ta = 25°C

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Switching Specifications
(unless otherwise specified. Ta = 25°C, VCC = 5V, IF = 16mA)
Test
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Circuit
Propagation delay 6N135 RL = 4.1kΩ ― 0.2 1.5 µs
time to logic low tpHL 1
at output 6N136 RL = 1.9kΩ ― 0.2 0.8 µs

Propagation delay 6N135 RL = 4.1kΩ ― 1.0 1.5 µs

time to logic high tpLH 1
at output 6N136 RL = 1.9kΩ ― 0.5 0.8 µs

IF = 0mA
Common mode 6N135 VCM = 10Vp-p ― 1000 ― V / µs
transient immunity RL = 4.1kΩ
CMH 2
at logic high level IF = 0mA
output (Note 10) 6N136 VCM = 10Vp-p ― 1000 ― V / µs
RL = 1.9kΩ
VCM = 10Vp-p
Common mode 6N135 RL = 4.1kΩ ― -1000 ― V / µs
transient immunity IF = 16mA
CML 2
at logic low level VCM = 10Vp-p
output (Note 10) 6N136 RL = 1.9kΩ ― -1000 ― V / µs
IF = 16mA
Bandwidth (Note 11) BW ― RL = 100Ω ― 2 ― MHz

(Note 8) DC current transfer ratio is defined as the ratio of output collector current, IO, to the forward LED
input current, IF, times 100%.
(Note 9) Device considered a two-terminal device: Pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7 and 8
shorted together.
(Note 10) Common mode transient immunity in logic high level is the maximum tolerable (positive) dvCM / dt on
the leading edge of the common mode pulse, VCM, to assure that the output will remain in a logic high
state (i.e., VO > 2.0V).
Common mode transient immunity in logic low level is the maximum tolerable (negative) dvCM / dt on
the trailing edge of the common mode pulse signal, VCM, to assure that the output will remain in a logic
low state (i.e., VO < 0.8V).
(Note 11) The frequency at which the AC output voltage is 3dB below the low frequency asymptote.

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Test Circuit 1.

PULSE GEN.
Zo = 50Ω IF
IF tf = 5ns 1 8 5V
10% DUTY

RL
0 5V 2 7
CYCLE
VO 3 6 VO
(*)
1.5V 1.5V IF CL
VOL 4 5

100Ω
MONITOR

tpHL tpLH

(*) CL is approximately 15PF which includes probe and stray

wiring capacitance.

Test Circuit 2.

IF 1 8 5V

RL
tr, tf = 8ns 2 7
10V 10% A 3
90% 6 VO
VCM
10% 90% B
0V 4 5
tr tf
VFF VCM
VO 5V
SWITCH AT A : IF = 0mA
PULSE GEN.
VO VOL
SWITCH AT B : IF = 16mA

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IF – VF ΔVF / ΔTa – IF
100 -2.6
Ta = 25°C

coefficient ΔVF / ΔTa (mV / °C )

50
30

Forward voltage temperature

-2.4
IF (mA)

10
5 -2.2
3
Forward current

1 -2.0
0.5
0.3
-1.8
0.1
0.05 -1.6
0.03

0.01 -1.4
1.0 1.2 1.4 1.6 1.8 2.0 0.1 0.3 0.5 1 3 5 10 30

Forward voltage VF (V)

Forward current IF (mA)

IOH (1) – Ta IO - IF
300 10

5
100 3
Output current IO (mA)
High level output current

50
1
IOH(1) (nA)

30
0.5

0.3
10

5 0.1
3 VCC = 5V
0.05
VO = 0.4V
0.03
Ta = 25°C
1
0.6 0.01
0 40 80 120 160 0.1 0.3 0.5 1 3 5 10 30 50 100 300

Ambient temperature Ta (°C) Forward current IF (mA)

IO / IF － IF IO / IF – Ta
100 1.2
VCC = 5V
VO = 0.4V
50 1.0
Current transfer ratio

30 Ta = -25°C
Notmalized IO / IF

0.8
IO / IF (%)

25°C

10 0.6
100°C Normalized
TO :
5 0.4 IF = 16mA
3 VCC = 4.5V
0.2 VO = 0.4V

1 0
0.3 0.5 1 3 5 10 30 50 -40 -20 0 20 40 60 80 100

Forward current IF (mA) Ambient temperature Ta (°C)

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IO – VO VO – IF
5
30mA VCC = 5V
10 Ta = 25°C IF VCC=5V
25mA

Output voltage VO (V )
4
Output current IO (mA)

8 RL
20mA
VO
3
6 15mA
Ta = 25℃
2 RL = 2kΩ
10mA
4
3.9Ω

IF = 5mA 10Ω
2 1

0 0
0 1 2 3 4 5 6 7 0 4 8 12 16 20 24

Output voltage VO (V)

Forward current IF (mA)

tpHL, tpLH – RL
5
IF = 16mA
3
VCC = 5V
tpLH
Propagation delay time

Ta = 25°C
tpHL, tpLH (μs)

0.5

0.3

tpHL

0.1
1 3 5 10 30 50 100

Load resistance RL (kΩ)

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RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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