XT - Principle of Basic Electronics Lab

EC2102: PRINCIPLE OF BASIC ELECTRONICS LABORATORY
LIST OF EXPERIMENTS:
COMPULSORY EXPERIMENTS:
1. To design a RC Band pass filter circuit and finding out its Bandwidth.
2. To determine forward and reverse bias characteristics of a PN junction diode.
3. To determine ripple factors of the half wave and full wave rectifier circuit with the
following condition
a) Without Filter b) With Capacitor Filter c) with the π FIlter
4. Study of Zener diode as a voltage regulator.
5. Study of the CE transistor amplifier and finding out its Bandwidth.
6. To determine hie and hfe of the transistor.
7. To design a RC phase shift oscillator and finding out its frequency of oscillation.
8. To design a Wein bridge oscillator and find out its frequency of oscillation.
9. To design a Non-inverting amplifier using IC 741 OP-AMP and finding out its gain
bandwidth product.
10. To design an inverting amplifier using IC 741 OP-AMP and finding out its gain
bandwidth product.
11. To design a differential amplifier using IC 741 OP-AMP and finding out its CMRR.
12. To implement and verify the truth table of following gates using IC 7400.
a) NOT b) AND c) OR d) XOR

OPTIONAL EXPERIMENTS:
13. Design and realization of an exclusive OR gate using NAND gate (IC 7400)
14. Implementation of the following Boolean Expression using AND Gates (IC 7408):
F = A.B.C.D.E
15. Design of a voltage follower (using IC 741 OP-AMP) & plotting of its frequency
response.
16. Design of a Differentiator circuit (using IC 741 OP-AMP) and observation of its
output waveforms for various input waveforms (Sine wave, Square wave &
Triangular wave).
17. Design of an Integrator circuit (using IC 741 OP-AMP) and observation of its
output waveform for various input waveforms (Sine wave, Square wave &
Triangular wave).
18. Measurement of the input impedances for inverting and non-inverting amplifiers
with same voltage gain (using IC 741 OP-AMP).
19. Design of a voltage follower (using IC 741 OP AMP) and plotting of its frequency
response curve.
20. Design of an adder circuit and a subtracter circuit (using IC 741 OP-AMP).
21. Measurement of the phase angle between two signals of the same frequency using
CRO.
22. Measurement of unknown frequencies using Lissajous patterns.
23. Measurement of input and output impedance of a voltage follower (using IC 741
OP-AMP).
24. Design of a logarithmic amplifier (using IC 741 OP-AMP).

DEPARTMENT
OF
ELECTRONICS AND COMMUNICATION ENGINEERING
BASIC ELECTRONICS LABORATORY
LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL
ON
TO DESIGN A RC BAND PASS FILTER CIRCUIT AND

FINDING OUT ITS BANDWIDTH
BIRLA INSTITUTE OF TECHNOLOGY

MESRA, RANCHI
AIM: To design a RC Band Pass filter circuit and finding out its Bandwidth.
INSTRUMENTS:
1. AC Power supply
2. Resistor – 10KΩ, 820KΩ
3. Capacitors – 2200pF, 1000pF
4. Multimeter
THEORY:
A band-pass filter is a device that passes frequencies within a certain range and
rejects (attenuates) frequencies outside that range.
PROCEDURE:
1. Connect the AC power supply to the circuit.
2. Fix the input voltage at 1Volt from the power supply.
3. Vary the input frequency from 20Hz onward and measure the output voltage for
each frequency while keeping input voltage to 1volt.
4. Tabulate the readings as in observation table.
5. Calculate voltage gain Vout/Vin for each set of reading.
6. Calculate gain in dB for each set. Gain in dB = 20log10Vout/Vin. Plot gain in dB
against frequency, Find 3dB frequencies and BW.
OBSERVATIONS:
Input fixed at 1V
S.No. Frequency Output voltage Volatge Gain Gain in dB

(Hz) (Vo) (Vout/Vin) 20log10Vout/Vin.
1 50
2 100
3 200
4 400
5 600
6 800
7 1K
8 1.2K
9 1.4K
10 1.6K
11 1.8K
12 2K
13 2.5K
14 3K
15 3.5K
16 4K
17 5K
18 6K
19 8K
20 10K
21 12K
22 14K
23 16K
24 18K
25 20K
RESULT:
CIRCUIT DIAGRAM:
Fig. Schematic of a band-pass filter
Fig. Frequency response of a band-pass filter using Bode plotter

DEPARTMENT
OF
ON
TO DETERMINE FORWARD AND REVERSE BIAS

CHARACTERISTICS OF A PN JUNCTION DIODE

MESRA, RANCHI
AIM: To determine forward and reverse bias characteristics of a PN junction diode
APPARATUS:
1. Diodes (1N4001)
2. Millimeter
3. Micro ammeter
4. Voltmeter
5. Resistance (100Ω)
6. DC power supply
THEORY
A p-n junction is formed by combining N-type and P-type semiconductor together

in very close contact. A p-n junction is formed by combining N- type and P-type
semiconductor together in very close contact. At the junction of a p-type and an n-type
semiconductor there forms a region called the depletion region, which have been
depleted of the mobile charges. Since the electrons or holes have left the depletion region,
due to diffusion in the process of formation of p-n junction, this depletion region is
electrically charged. The p-type depletion regions are negatively charged (due to
uncompensated acceptor ions) and n-type depletion regions are positively charged (due to
uncompensated donor ions). The potential difference exists across the depletion region
known as ‘contact potential’.
The act of applying a voltage across a p-n junction is known as biasing. There are
two ways in which a p-n junction can be biased. One is known as forward biasing. The
other is known as reverse biasing.
In forward biasing, the positive terminal of the battery is connected to the p-side
and negative terminal of the battery is connected to n- side of the diode. In this set up the
conduction across p-n junction takes place due to the migration of the majority charge
carriers. This means electrons migrate from n- side to p- side and the holes migrate from
p- side to n- side. In forward biasing the size of the depletion layer becomes smaller and
the resistance of the p-n junction diode becomes low.
In reverse biasing, the positive terminal of the battery is connected to n- side and
the negative terminal of the battery is connected to p- side of the p-n junction. In the
arrangement, the size of the depletion region becomes large and the resistance of the
diode becomes high.
The graph of voltage applied across the diode (V) versus the current (I) flowing
thru it is called its V-I characteristic. A typical V-I characteristic of a p-n junction diode
is as shown.
IF (mA)
Forward Bias
VR VB
VF
Breakdown Region 0.7V
Reverse Bias
IR (µA)
Procedure:
1. Connect the circuit as shown in figure 1.

2. Bring the variable voltage of the DC source to zero. The current through
milliammeter should also be zero.
3. Increase the variable voltage of the DC source slowly and in steps. Corresponding
to each setting, note down the voltmeter and milliammeter readings.
4. Do not exceed the current beyond the current rating of the diode. This completes
the observation for V-I characteristics of the forward biased diode
5. Plot Current (I) Voltage (V) by choosing proper scales
6. Make the connections as shown in figure 2.
7. Repeat the steps 2 and 3. This completes observation for V-I characteristics of
reverse biased diode.
8. Plot Current (I) Voltage (V) by choosing proper scales
Fig.1. Circuit for forward biasing of the diode

Fig.2. Circuit for reverse biasing of the diode
OBSERVATIONS:
Table I
Readings for Forward Bias of the diode.
Sl. No. Vdc(Volt) VF IF

(volt) (mA)
1. 0.1
2. 0.2
3. 0.3
4. 0.4
5. 0.5
6. 0.6
7. 0.7
8. 0.8
9. 0.9
10. 1
11. 2
12. 3
13. 4
14. 5
15. 6
Table II
Readings for Reverse bias of the diode.
Sl. No. Vdc(Volt) VR IR

(volt) (µA)
1. 5
2. 10
3. 15
4. 20
5. 25
6. 30
7. 35
8. 40
9. 45
10. 50
11. 55
12. 60
13. 65
14. 70
15. 75
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
TO DETERMINE RIPPLE FACTORS OF THE HALF WAVE AND

FULL WAVE RECTIFIER CIRCUIT.

MESRA, RANCHI
AIM: To determine ripple factors of the half wave and full wave rectifier circuit with
the following condition
a) Without filter
b) With Capacitor filter
c) With the π filter.
APPARATUS:
1. CRO.
2. DC voltmeter.
3. AC voltmeter.
4. Half wave and Full wave Rectifier circuits
5. Circuit board.
THEORY:
Half-Wave rectifier rectifies the positive half cycles of the ac input. Full-Wave rectifier
rectifies both the positive and negative half cycles of the ac input.
Ripple factor (r) = rms value of the ac component / dc value of the rectifier wave.
i.e. r = Vrms/Vdc
PROCEDURE:
1. Connect a dc voltmeter, an ac voltmeter and a CRO across the output.
2. Connect the circuit as a half wave rectifier (by close K3 and open K1, K2 and
K4) and measure the dc and ac voltages with and without filter in each type
3. Plug in the input.
4. Measure Vrms, Vdc and observe waveform on CRO.
5. Tabulate the readings.
6. Calculate r from the readings.
7. Calculate r theoretically.
8. Connect the circuit as C-filter, L-filter, LC-filter and -filter (By Closing
suitable key K2, K3 and K4.) and note the readings of dc voltmeter and ac
voltmeter in each case. Tabulate the readings.
9. Now connect the circuit as a center tapped full wave rectifier (by close K1, K3
and open K2 and K4) and measure the dc and ac voltages with and without
filter (By Closing suitable key K2, K3 and K4.) in each type.
10. Calculate ‘r’ from measured value and theoretically.
OBSERVATIONS:
(a) For Full Wave Rectifier:
HW rectifier – K1 open
Parameter Without filter (K2&K4 With C1(K2 & K3 With CLC

open, K3-close) closed, K4 open) (K2&K4-closed,
K3-open)
Vdc
Vac
r
(b) For Full Wave Rectifier:
FW rectifier - K1 closed
Parameter Without filter(K2&K4 With C1(K2 & K3 With CLC

open, K3-close) closed, K4 open) (K2&K4-closed,
K3-open)
Vdc
Vac
r
RESULT:
CIRCUIT DIAGRAM:
DEPARTMENT
OF
ON
STUDY OF ZENER DIODE AS A VOLTAGE REGULATOR

MESRA, RANCHI
AIM: Study of Zener diode as a voltage regulator
APPARATUS:
1. Power supply.
2. DC voltmeter.
3. DC ammeter.
COMPONENTS:
1. Resistors 470, 1.5K, 2.2K, 3.3K, 5.6K, 12K.
2. Zener diode 1Z12.
THEORY:
If the reverse voltage across a Zener diode reaches a level called breakdown
voltage, it starts conducting heavily. Before this reverse voltage is reached it does not
conduct, however a small reverse current does flow (few A).
To prevent high current through the Zener (for it may be damaged), a series
resistor is included. After breakdown the voltage across the zener remains constant even
if the input voltage varies or the load current changes.
PROCEDURE:
A. For Characteristic of Zener diode and measuring the Breakdown Voltage:
1. Connect the circuit as shown. Fix the load resistance to 2.2 K

2. Vary V and note the values of I1, I2 and Vi and Vdc.
3. Tabulate the readings in table given below:
4. Draw V-I characteristics for the zener.
5. Find out the Breakdown Voltage (Vz) of the Zener diode
S. No. Vi (volts) Ii (mA) Iz (mA) Vdc (volts)

1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8
9 9
10 10
11 11
12 12
13 13
14 14
15 15
16 16
17 17
18 18
19 19
20 20
B. For Study Voltage regulation Characteristic of Zener diode:
1. Keep Vi > Vz (fixed)

2. Vary load (By connecting different load resistances) and measure I1 , Iz and
Vdc.
3. Tabulate the readings in table given below:
Vin=18V
RL (k) I1 (mA) Iz (mA) Vdc (volts)
1.5
2.2
3.3
5.6
12
RESULT:
PRECAUTIONS:
Ii
R1 -
+
00.000 A
470ohm
D1
R5
5V R4 R6 +
Vin R2 R3 00.000 V
3.3kohm 5.6kohm
-
(0-30V) 1.5kohm 12kohm
+ 2.2kohm
Iz 00.000 A Vz
-
Fig. CIRCUIT DIAGRAM TO STUDY ZENER DIODE CHARACTERISTICS

DEPARTMENT
OF
ON
STUDY OF THE CE TRANSISTOR AMPLIFIER AND FINDING

OUT ITS BANDWIDTH

MESRA, RANCHI
AIM: Study of the CE transistor amplifier and finding out its bandwidth
APPARATUS:
1. Power supply
2. A. C. mill voltmeter
3. Common emitter transistor amplifier circuit
THEORY:
PROCEDURE:
1. Connect the power supply to the circuits as shown. Set the voltage to –12 Volts
with respect to common terminal.
2. Connect a function generator to the input terminal and set it to 25 mV, 10 Hz.
3. Connect an a.c millivoltmeter to the output terminal.
4. Read the output and note down.
5. Keeping Vin fixed at 25 mV, go on increasing the frequency at regular intervals
and measuring the output voltage.
6. Tabulate the readings.
5. Plot Gain against frequency on semilogrethmic graph sheet.
6. Find 3dB point frequencies and Bandwidth.
OBSERVATIONS:
Input Voltage (fixed) = 25 mV.
Frequency Output voltage Voltage gain Gain

(Hz) Vo (Vout/ Vin) [20 log10 (Vout/Vin)]
(Volt) (dB)
50
70
90
100
200
300
500
1K
2K
4K
6K
8K
10K
20K
30K
40K
50K
60K
80K
100K
200K
400K
600K
800K
1M
2M
4M
8M
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
TO DETERMINE hie AND hfe OF A TRANSISTOR

MESRA, RANCHI
AIM: To dtermine hie and hfe of a CE transistor amplifier
APPARATUS:
1. Function generator.
2. VTVM/AC Mill voltmeter
3. DC milliammeter.
4. Dual DC Power Supply
THEORY:
hie =Vbe / Ib = Input impedance in CE configuration.
hfe =Ic / Ib = Forward current gain in CE configuration
PROCEDURE:
1. Connect the circuit as shown in fig.

2. Apply Vin as 25mV and 1KHz from function generator.
3. Fix collector voltage Vcc at 6 V.
4. Vary ICQ by varying VEE .
5. Measure Vbe, Vce and Vcr for various collector currents (IC).
6. Tabulate the readings and calculate hie and hfe.
7. Plot hie vs. ICQ and hfe vs. ICQ.
OBSERVATIONS:
ICQ Vbe Vce Vcr Ib Ic Hie Hfe

(mA) (mV ) (mv) (mV) = (Vin-Vbe)/10K = (Vce –Vcr)/ 10 =Vbe/Ib =Ic/Ib
(A) (mA) (K)
1.0
2.0
3.0
4.0
5.0
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
DESIGN OF AN RC PHASE SHIFT OSCILLATOR (USING IC 741 OP AMP) AND
CALCULATION OF ITS FREQUENCY OF OSCILLATION.

MESRA RANCHI
AIM: Design of an RC Phase Shift Oscillator (Using IC 741 OP AMP) and calculation of
its frequency of oscillation.
EQUIPMENTS:
1. DUAL DC POWER SUPPLY

2. CRO
3. BREADBOARD.
COMPONENTS:
1. IC 741
2. RESISTOR 1M, 10K, 33K.
3. Capacitor 0.1Μf.
ABOUT OP-AMP IC 741:
The 741 is the godfather of all operational amplifiers (amplifiers on a chip).

Although most up-to-date designs beat it for speed, low noise, etc, it still works well as a
general purpose device. One of its advantages is that it is compensated (its frequency
response is tailored) to ensure that under most curcumstances it won't produce unwanted
spurious oscillations. This means it is easy to use, but the down-side of this is the poor
speed/gain performance compared to more modern op-amps.
The 741 is usually supplied in an 8-pin ‘DIL’ (Dual In Line) or ‘DIP’ (Dual Inline
Package, or sometimes Dual Inline Plastic) package with a pinout shown above. This has
proved so popular that many other competing op-amps have adoped the same
package/pinout. Hence for many applications the various op-amps are ‘drop in’
replacements or upgrades for one another. These days there is a large family of 741 type
devices, made by various manufacturers. Sometimes one manufacturer will make
different versions, which work better than others in some respect. Each has a slightly
different part number, but it generally has “741” in it somewhere!
The values given below are ‘typical’ for an ordinary 741, better versions (more
expensive) may give better results...
Typical values of Basic Parameters:
Rail voltages : +/- 15V dc (+/- 5V min, +/- 18V max)
Input impedance: Around 2MegOhms
Low Frequency voltage gain: approx 200,000
Input bias current: 80nA
Slew rate: 0.5V per microsecond
Maximum output current: 20mA
Recommended output load: not less than 2kilOhms
Note that, due to the frequency compensation, the 741's voltage gain falls rapidly with
increasing signal frequency. Typically down to 1000 at 1kHz, 100 at 10kHz, and unity at
about 1MHz. To make this easy to remember we can say that the 741 has a gain-
bandwidth product of around one million (i.e. 1 MHz as the units of frequency are Hz).
THEORY:
The RC phase shift oscillator consists of an op-amp as amplifier and 3 RC
cascade networks as the feedback circuit. The op-amp is used in the inverting mode, so
output signal will be 180˚ out of phase. The feedback RC network provides the exactly
180˚ phase shift. So the total phase shift is 0˚.
The gain of the amplifier is also kept large to produce oscillation.

The frequency of oscillation is given by
F= 0.065/RC.
PROCEDURE:
1. Connect the circuit as shown in the circuit 1.
2. Observe the sinusoidal output on CRO.
3. Measure the time period of the sinusoidal wave and calculate its frequency.
4. Compare the measured frequency with
F= 0.065/RC.
RESULT:
PRECAUTION:
DEPARTMENT
OF
ON
DESIGN OF A WEIN BRIDGE OSCILLATOR (USING IC 741 OP AMP) AND
CALCULATION OF ITS FREQUENCY OF OSCILLATION.

MESRA RANCHI
AIM: Design of a Wein Bridge Oscillator (Using IC 741 OP AMP) and calculation of its
frequency of oscillation.
EQUIPMENTS:
1. DUAL DC POWER SUPPLY
2. CRO
3. BREADBOARD
COMPONENTS:
1. IC 741
2. RESISTORS 1.8K, 3.3KΩ
3. CAPACITORS 100KpF
4. POTENTIOMETER 47KΩ


THEORY:
In a WEIN bridge oscillator the WEIN bridge is connected between the
amplifiers input terminals. When the wein bridge is balanced the resonant frequency is
given by:
1
F=
2 RC
R1  R f
Av =
R1
PROCEDURE:
1. Connect the circuit as shown in the circuit 1

2. Observe the output on CRO adjust the gain of amplifier using potentiometer
to produce oscillation.
3. Measure the time period of the sinusoidal wave and calculate its frequency.
4. Compare the measured frequency with
1
F=
2 RC
RESULT:
PRECAUTION:
DEPARTMENT
OF
ON
TO DESIGN A NON-INVERTING AMPLIFIER USING IC 741 AND FINDING

OUT ITS GAIN BANDWIDTH PRODUCT

MESRA, RANCHI
AIM: Todesign a Non-inverting amplifier using IC 741 and finding out its gain bandwidth
product.
COMPONENTS:
1. IC 741
2. RESISTOR’S 4.7K, 47K, 470 K.

THEORY:
PROCEDURE:
1. Connect the circuit as shown in the circuit diagram.

2. Keep Rf = 470 k,R1= 47 k
3. Vary the frequency from 20Hz to 200 KHz and note down the output
reading each time, keeping Vin=10 mV (fixed) and tabulate the reading in
to observation table.
4. Repeat R1= 4.7K and repeat the procedure as above.
OBSERVATIONS:
SL. No. Frequency Vin Vout Gain Av=Vout/Vin Gain

(Hz) (mv) (mv) [20 log10 Vout/Vin)]
(dB)
1 50
2 100
3 200
4 400
5 800
6 1K
7 2K
8 4K
9 6K
10 8K
11 10K
12 15K
13 20K
14 25K
15 30K
16 35K
17 40K
18 45K
19 50K
20 60K
21 70K
22 80K
23 90K
24 100K
25 150K
26 200K
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
TO DESIGN AN INVERTING AMPLIFIER USING IC 741 AND FINDING

OUT ITS GAIN BANDWIDTH PRODUCT

MESRA, RANCHI
AIM: To design an inverting amplifier using IC 741 and finding out its gain bandwidth
product.
COMPONENTS:
1. RESISTORS 4.7K,47K.470KΩ
2. IC 741

THEORY:
PROCEDURE:

2. Keep Rf = 470K ,R1=47K
3. Keep Vin = 100mV (fixed) each time.
4. Vary the frequency from 20Hz to 200KHz and note down the output reading
at each time keeping Vin =100mV (fixed) and tabulate the readings in to
observation table.
5. Replace R1=4.7K and repeat the procedure as above (Vin=10mV).
Note: Try to take the reading until gain will drop from its constant gain upto the
value, which is approximately equal to the gain value for first reading
OBSERVATIONS:
SL. No. Frequency Vin Vout Gain Av=Vout/Vin Gain
(Hz) (mv) (mv) [20 log10 Vout/Vin)]
(dB)
1 50
2 100
3 200
4 400
5 800
6 1K
7 2K
8 4K
9 6K
10 8K
11 10K
12 15K
13 20K
14 25K
15 30K
16 35K
17 40K
18 45K
19 50K
20 60K
21 70K
22 80K
23 90K
24 100K
25 150K
26 200K
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
TO DESIGN A DIFFERENTIAL AMPLIFIER USING IC 741 AND

FINDING OUT ITS CMRR

MESRA, RANCHI
AIM: To design a differential amplifier using IC 741 and finding out its CMRR.
COMPONENTS:
1. IC 741
2. Resistors – 470K, 47K, 100Ω, 2nos each

THEORY:
A differential amplifier amplifies the difference between two signals.

Difference mode signal Vd = V1 – V2
Common mode signal Vc = 1/2 (V1 + V2)
Differential amplifier is a linear device.
Vo = A1V1 + A2V2
A1 = Amp. from input V1, when input 2 is grounded.
A2 = Amp. from input V2, when input 1 is grounded.
1. V1 = Vc + 1/2 Vd\
2. V2 = Vc – 1/2 Vd
3. Vo = AdVd + AcVc
4. Ad = (A1 – A2)/2, Ac = A1 + A2
Common mode rejection ration [CMRR] is:

Ad Differential mode gain
CMRR = ------ = ----------------------------
Ac Common mode gain
PROCEDURE:
1. Connect the circuit as shown in the circuit 1.

2. Keep Vin = 100 mV.
3. Measure the output by varying frequency.
4. Common mode gain Ac = Vo/Vin.
5. Connect the circuit as shown in circuit 2.
6. Measure V2 and Vo while keeping V1 = 100mV for different frequencies.
7. Calculate Ad from Vo = AdVd + AcVc where Vc is Common mode signal and Vd
is the Difference mode signal
8. Calculate CMRR:
CMRR = Ad/Ac.
OBSERVATIONS:
For finding out Ac:
Frequency Vin Vo Ac = Vo/Vin

(Hz) (mV) (mV)
20
200
2000
20000
200000
For finding out Ad:
Frequency V1 V2 Vo
(Hz) (mV) (mV) (mV)
20
200
2000
20000
200000
RESULT:
PRECAUTIONS:
DEPARTMENT
OF
ON
TO IMPLEMENT AND VERIFY TRUTH TABLE OF DIFFERENT

GATES USING UNIVERSAL GATE (NAND GATES).

MESRA, RANCHI
AIM: To implement and verify truth table of different gates using universal gate
(NAND gates).
CIRCUIT COMPONENT:
1. IC7400
2. Probe
THEORY: The NAND gate is said to be a universal gate because any all other gates as
well as any digital system can be implemented with it. Combinational circuits and
sequential circuits as well can be constructed with this gate because the flip-flop circuit
can be constructed from two NAND gates connected back to back.
The implementation of the AND, OR, and NOT operations with NAND gates is
shown in Fig. The NOT operation is obtained from a one-input NAND gate. The AND
operation requires two NAND gates. The first produces the inverted AND and the second
acts as an inverter to produce the normal output. The OR operation is achieved through a
NAND gate with additional inverters in each input.
PROCEDURE:

2. Before switching ON power supply, make sure that the connection are correct.
3. Apply the input logic state code mentioned in Observation Table in terms of +5 volts
for state-1 and 0 volts for state-0.
4. Observe the output states.
5. Verify the result of truth ness.
6. Repeat steps from 3 to 5 for all possible combination.
OBSERVATION TABLE:
(i)Verifying: Truth Table of (ii)Verifying: Truth Table of
NOT GATE AND GATE
INPUT OUTPUT
INPUT OUTPUT A B Y
X Y 0 0
0 1
0 1 0
1 1 1
(iii)Verifying: Truth Table of (i)Verifying: Truth Table of

OR GATE XOR GATE
INPUT OUTPUT INPUT OUTPUT

A B Y
0 0 X Y X.Y (X.Y)’.X (X.Y)’.Y X  Y
0 1
1 0 0 0
1 1 0 1
1 0
1 1
RESULT:
PRECAUTIONS:

XT - Principle of Basic Electronics Lab

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EC2102: PRINCIPLE OF BASIC ELECTRONICS LABORATORY

2. To determine forward and reverse bias characteristics of a PN junction diode.

a) Without Filter b) With Capacitor Filter c) with the π FIlter

4. Study of Zener diode as a voltage regulator.

5. Study of the CE transistor amplifier and finding out its Bandwidth.

6. To determine hie and hfe of the transistor.

a) NOT b) AND c) OR d) XOR

22. Measurement of unknown frequencies using Lissajous patterns.

24. Design of a logarithmic amplifier (using IC 741 OP-AMP).

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

TO DESIGN A RC BAND PASS FILTER CIRCUIT AND

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S.No. Frequency Output voltage Volatge Gain Gain in dB

Fig. Schematic of a band-pass filter

Fig. Frequency response of a band-pass filter using Bode plotter

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

TO DETERMINE FORWARD AND REVERSE BIAS

BIRLA INSTITUTE OF TECHNOLOGY

A p-n junction is formed by combining N-type and P-type semiconductor together

1. Connect the circuit as shown in figure 1.

Fig.1. Circuit for forward biasing of the diode

Sl. No. Vdc(Volt) VF IF

Sl. No. Vdc(Volt) VR IR

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

TO DETERMINE RIPPLE FACTORS OF THE HALF WAVE AND

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Parameter Without filter (K2&K4 With C1(K2 & K3 With CLC

(b) For Full Wave Rectifier:

Parameter Without filter(K2&K4 With C1(K2 & K3 With CLC

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

STUDY OF ZENER DIODE AS A VOLTAGE REGULATOR

BIRLA INSTITUTE OF TECHNOLOGY

A. For Characteristic of Zener diode and measuring the Breakdown Voltage:

1. Connect the circuit as shown. Fix the load resistance to 2.2 K

S. No. Vi (volts) Ii (mA) Iz (mA) Vdc (volts)

B. For Study Voltage regulation Characteristic of Zener diode:

1. Keep Vi > Vz (fixed)

Fig. CIRCUIT DIAGRAM TO STUDY ZENER DIODE CHARACTERISTICS

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

STUDY OF THE CE TRANSISTOR AMPLIFIER AND FINDING

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Frequency Output voltage Voltage gain Gain

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

TO DETERMINE hie AND hfe OF A TRANSISTOR

BIRLA INSTITUTE OF TECHNOLOGY

1. Connect the circuit as shown in fig.

ICQ Vbe Vce Vcr Ib Ic Hie Hfe

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

BIRLA INSTITUTE OF TECHNOLOGY

1. DUAL DC POWER SUPPLY

ABOUT OP-AMP IC 741:

The 741 is the godfather of all operational amplifiers (amplifiers on a chip).

The gain of the amplifier is also kept large to produce oscillation.

BASIC ELECTRONICS LABORATORY

LAB INSTRUCTIONS FOR CARRYING OUT PRACTICAL

BIRLA INSTITUTE OF TECHNOLOGY