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PD - 94788

IRF5305PbF
HEXFET® Power MOSFET
 Advanced Process Technology
 Dynamic dv/dt Rating D
VDSS = -55V
 175°C Operating Temperature
 Fast Switching
RDS(on) = 0.06Ω
 P-Channel G
 Fully Avalanche Rated
 Lead-Free ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

Absolute Maximum Ratings


Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A
IDM Pulsed Drain Current  -110
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 280 mJ
IAR Avalanche Current -16 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

10/31/03
IRF5305PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A 
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 63 ID = -16A
Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13 
td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V
tr Rise Time ––– 66 ––– ID = -16A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10 
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 1200 ––– VGS = 0V


Coss Output Capacitance ––– 520 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -31


(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -110
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V 
trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A
Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs 

Notes:
 Repetitive rating; pulse width limited by  ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
 VDD = -25V, starting TJ = 25°C, L = 2.1mH  Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -16A. (See Figure 12)

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IRF5305PbF
1000 1000 VGS
VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V

-ID , Drain-to-Source Current (A)


-ID , Drain-to-Source Current (A)

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V
100 100

10 10

-4.5V
-4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH


TJc = 25°C TCJ = 175°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -27A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

TJ = 25°C
1.5
TJ = 175°C
(Normalized)

10 1.0

0.5

V DS = -25V
20µs PULSE WIDTH V GS = -10V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature

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IRF5305PbF
2500 20
V GS = 0V, f = 1MHz I D = -16A
C iss = Cgs + C gd , Cds SHORTED V DS = -44V

-VGS , Gate-to-Source Voltage (V)


C rss = C gd V DS = -28V
2000 C oss = C ds + C gd 16
Ciss
C, Capacitance (pF)

Coss
1500 12

1000 8
Crss

500 4

FOR TEST CIRCUIT


SEE FIGURE 13
0 A 0 A
1 10 100 0 10 20 30 40 50 60
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-ISD , Reverse Drain Current (A)

-ID , Drain Current (A)

100

100
100µs
TJ = 175°C
10
1ms
TJ = 25°C

TC = 25°C 10ms
TJ = 175°C
VGS = 0V Single Pulse
10 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage

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IRF5305PbF
RD
VDS
35
VGS
D.U.T.
30 RG -
+ VDD
-ID , Drain Current (A)

25
-10V
Pulse Width ≤ 1 µs
20 Duty Factor ≤ 0.1 %

15 Fig 10a. Switching Time Test Circuit

10
td(on) tr t d(off) tf
VGS
5 10%

0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
90%
VDS

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10
PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF5305PbF
VDS L
700
ID

E AS , Single Pulse Avalanche Energy (mJ)


- TOP -6.6A
RG D.U.T -11A
+ VDD 600
IAS A BOTTOM -16A
-20V DRIVER
tp 0.01Ω 500

400

15V 300

200
Fig 12a. Unclamped Inductive Test Circuit

I AS 100

VDD = -25V
0 A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current
tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com
IRF5305PbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
• Low Stray Inductance
• Ground Plane

• Low Leakage Inductance
Current Transformer
-

+


- +
-

 **
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel


** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive


P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS


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IRF5305PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET
1 - GATE
IGBTs, CoPACK
1 2 3 2 - DRAIN
1- GATE 1- GATE
3 - SOURCE
2- DRAIN 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)


3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010


LOT CODE 1789
ASSEMBLED O N WW 19, 1997 INTERNATIONAL PART NUMBER
IN THE ASSEMBLY LINE "C" RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free" DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT CODE WEEK 19
LINE C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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