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IRF5305PbF
HEXFET® Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating D
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.06Ω
P-Channel G
Fully Avalanche Rated
Lead-Free ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
10/31/03
IRF5305PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 63 ID = -16A
Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V
tr Rise Time ––– 66 ––– ID = -16A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A
Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
VDD = -25V, starting TJ = 25°C, L = 2.1mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -16A. (See Figure 12)
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IRF5305PbF
1000 1000 VGS
VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V
100 100
10 10
-4.5V
-4.5V
100 2.0
I D = -27A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)
TJ = 25°C
1.5
TJ = 175°C
(Normalized)
10 1.0
0.5
V DS = -25V
20µs PULSE WIDTH V GS = -10V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
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IRF5305PbF
2500 20
V GS = 0V, f = 1MHz I D = -16A
C iss = Cgs + C gd , Cds SHORTED V DS = -44V
Coss
1500 12
1000 8
Crss
500 4
1000 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-ISD , Reverse Drain Current (A)
100
100
100µs
TJ = 175°C
10
1ms
TJ = 25°C
TC = 25°C 10ms
TJ = 175°C
VGS = 0V Single Pulse
10 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)
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IRF5305PbF
RD
VDS
35
VGS
D.U.T.
30 RG -
+ VDD
-ID , Drain Current (A)
25
-10V
Pulse Width ≤ 1 µs
20 Duty Factor ≤ 0.1 %
10
td(on) tr t d(off) tf
VGS
5 10%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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IRF5305PbF
VDS L
700
ID
400
15V 300
200
Fig 12a. Unclamped Inductive Test Circuit
I AS 100
VDD = -25V
0 A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Current Regulator
Same Type as D.U.T.
50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS
VGS
VG
-3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF5305PbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
**
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/