1 MHz Cascaded Z-Source Inverters for Scalable Grid-Interactive Photovoltaic

(PV) Applications Using GaN Device

Liming Liu, Hui Li
Florida State University
Tallahassee, FL 32310, USA
Liming@caps.fsu.edu,
Hli@caps.fsu.edu
Yi Zhao, Xiangning He Z. John Shen
Zhejiang University University of Center Florida
Hangzhou, Zhejiang 310058, China Orlando, FL 32826, USA
zhao.yi@foxmail.com, johnshen@ucf.edu
hxn@ee.zju.edu.cn

Abstract --This paper presents a scalable cascaded Z-source
inverter for residential PV systems with high efficiency and high
switching frequency. The commercial low voltage Gallium
Nitride (GaN) device with low loss and high frequency is used to
facilitate each Z-source inverter cell modular. The
comprehensive Z-source network is designed based on the
innovative equivalent AC circuit model. A detailed efficiency
analysis is applied to a 3kW single phase grid-connected PV
system with four cascaded Z-source inverter cells and 1MHz
output frequency. The proposed topology also has the advantage
to achieve independent maximum power point tracking (MPPT)
control for each module and therefore improve the PV energy
harvesting capability.
Index Terms— Cascaded Z-Source Inverter, Gallium Nitride
(GaN) Device, Photovoltaic (PV) System, Z-Source Network
Design
I. INTRODUCTION
Current residential photovoltaic (PV) systems are
typically constructed from ten to a few hundred series-
parallel connection PV modules connected to a common DC
bus inverter [1-3]. One main reason that prevents the grid-
connected PV systems from realizing its full market potential
is the power losses due to the module mismatch, orientation
mismatch, partial shading, and MPPT inefficiencies. The
conventional single DC bus inverter and MPPT methods both
can not solve the above issues due to multiple local peak
power points [4-5]. The cascaded dc-dc converter topology,
as shown in Fig.1, can achieve MPPT for each PV module,
which reduces the above power loss [6-7]. However, the
configuration has dc-dc and dc-ac conversion stages, which
decreases the overall system efficiency. In addition, the
switching frequency of dc-ac inverter is limited leading to the
big size filter and large electrolyte capacitors. Cascaded
multilevel inverter topology, as shown in Fig.2, can achieve
MPPT for each PV module, single stage energy conversion,
as well support a higher equivalent PWM frequency and a
larger DC bus voltage [8-9]. Nevertheless, the H-bridge
inverter still lacks boost function so that the inverter KVA
requirement has to be increased twice with a PV voltage
range of 1:2. Moreover, the high switching losses at high
switching frequencies still present a daunting challenge.
This paper proposed a scalable cascaded Z-source inverter
configuration for residential PV system as shown in Fig.3.
The proposed PV system can achieve single energy
conversion and boost function. The commercial low voltage
GaN device can be used to facilitate the each Z-source
inverter cell modular, which reduces losses significantly and
achieves high efficiency [10]. The integrated Z-source
network in each module is immune to shoot-through faults
especially operating at high switching frequency and
enhances the system reliability. Independent MPPT for each
Z-source inverter module can implement an efficient PV
energy conversion.
In this paper, the PV system with equivalent 1MHz output
frequency has been achieved due to advanced GaN devices
and phase-shift PWM technology so the size and weight of
line filter can be reduced significantly and good power
quality can be maintained as well. From the capability of
double fundamental frequency (DFF) power oscillation
handling and high frequency ripple attenuation point of view,
the comprehensive Z-source network design has been
developed based on an innovative equivalent AC circuit
model for the single phase PV system. The efficiency of each
Z-source inverter module is analyzed. The effect of

Fig.1 Grid connected PV system with Fig.2 Grid connected PV system with Fig.3 Proposed PV system circuit configuration cascaded DC-DC
converters cascaded H-bridge inverters with cascaded Z-source inverters

978-1-4577-0541-0/11/$26.00 ©2011 IEEE 2738

commercial devices selection for the proposed PV system and TABLE I: SYSTEM CIRCUIT PARAMETERS
Parameters Symbol Value
switching pattern on the efficiency has been discussed.
Vdc1, Vdc2
Finally, the detail power loss derivation is provided. DC link voltage
Vdc3, Vdc4
135V
VPV1, VPV2
II. SYSTEM DESCRIPTION AND PARAMETERS SELECTION PV Voltage
VPV3, VPV4
60-120V

The 3kW/240V single phase grid-connected PV system Pin1, Pin2

Each Full PV power 750W
Pin3, Pin4
with four cascaded Z-source inverter modules (ZSIM) and Z-source
Switching frequency fSW 125kHz
1MHz output frequency is developed as shown in Fig.4. The inverter
200V/12A/25mΩ GaN transistors recently introduced to the module Z-source inductor LZL 18μH
(ZSIM)
market by EPC Corporation are used in each ZSIM. Each Z-source capacitor CZC 2500μF
ZSIM is a standardized open-frame power module with
Input capacitor Cin 25μF
750W. The input voltage of each PV module varies between
60V and 120V under different solar irradiation levels. In Cascaded inverter
n 4
number
order to generate 1 MHz operation frequency at output
Filter Inductor Lf 100μH
terminals, the switching frequency of each ZSIM is 125 kHz Grid
due to phase-shift PWM modulation method. The dc voltage Rated RMS phase
Vg 240V
voltage
after Z-source network is controlled to 135V during non-
shoot-through period. There are two shoot-through states per Vdc = 2V peak − V pv _ low (1)
switching cycle as shown in Fig.5. Ts is the switching cycle
where Vpeak is selected to 97.5V considering the possible
and Tst is the shoot-through period. The peak carrier voltage
maximum output voltage of ZSIM, Vpv_low is 60V. The system
is Vtri. In the most challenge case, PV module is controlled to
circuit parameters are shown in Table. I. The detailed Z-
generate the full power 750W under lowest PV voltage Vpv_low.
The peak value of each ZSIM output voltage Vpeak is equal to source network design is introduced in the following section.
the shoot-through command line Bline. The dc voltage after Z- The PV system is able to operate in stand-alone mode and
grid-connected mode through a static transfer switch (STS)
source network can be calculated by:
Z-source Module 1 according to the system requirement.
ipv1 D 5.6A 200V GaN
Vpv1
LZL
Vdc1 S1 S2 iL1 Lf /2 PCC ig III. Z-SOURCE NETWORK DESIGN
CZC CZC
PV 60~120V 135V
Module Cin S3 S4
v1 STS A. Z-source inductor design
LZL
750W
Z-source Module 2 The Z-source network design is critical for the system
ipv2 D 5.6A
LZL
200V GaN
efficiency evaluation. The Z-source inductors are useful for
Vpv2
CZC CZC
Vdc2 S5 S6
v2
reducing current ripple, as well Z-source capacitors and input
PV 60~120V 135V
Module Cin S7 S8 capacitor can handle voltage ripple. The maximum current
LZL 240V
750W vs through the inductor occurs during maximum shoot-through
Z-source Module 3 Local
ipv3 D 5.6A 200V GaN Load g
v duty cycle, which causes maximum ripple current. In the
LZL
Vpv3 Vdc3 S9 S10 design, 40% current ripple through the inductors during
CZC CZC
PV 60~120V 135V v3 maximum power operation is chosen. Based on Fig.5, the
Module Cin S11 S12
LZL inductance can be calculated by:
750W
ipv4 D Z-source
5.6A
Module 4
200V GaN VZC (1 − M )
Vpv4
LZL LZL = (2)
CZC CZC
Vdc4 S13 S14 v4 Lf /2 2 f sw ΔI ZL
PV 60~120V 135V
Module Cin
LZL S15 S16 where VZC =(Vdc+Vpv_low)/2 is the Z-source capacitor voltage,
750W Vdc is the dc voltage after Z-source network, M=Vpeak/Vtri is
Fig.4 Proposed PV system with four cascaded Z-source inverter modules at modulation index, Vtri is the carrier peak value, fsw is
3kW switching frequency, ΔIZL is the allowed maximum Z-source
inductor current ripple.
B. Input capacitor design
For the single phase inverter system, the instantaneous
output power includes dc component and DFF components.
Vtri

The peak to peak value of the DFF power is twice dc power,

which is PV power. From the energy conservation point of
Vpeak

view, the DFF power should be absorbed by the input

capacitor and Z-source capacitors, which causes DFF voltage
ripple. Since the Z-source capacitor voltage VZC is much
greater than input capacitor voltage Vpv, Z-source capacitors
Fig.5 Z-source inverter modulation with maximum shoot-through duty should be used to deal with the DFF power. Otherwise, the
ratio

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 (a) (b) (c)
Fig.6 Z-source inverter operation mode: (a) shoot-through state; (b) traditional zero state; (c) active state
total capacitance will increase which resulting in low power ⎧ di ZL
density. In addition, input capacitor with big capacitance will ⎪ LZL = Dnst V pv − ( Dnst − Dst )V ZC
⎪ dt
cause the phase-shift between VZC and Vpv due to the ⎪⎪ dV pv 1
equivalent LC filter on DC side, which will increase the ⎨Cin = i pv − 2 Dnst i ZL − MI g cos 2ωt (5)
burden of total capacitors to handle the DFF power. ⎪ dt 2
According to the above analysis, the input capacitor is used ⎪ dV ZC 1
⎪CZC = ( Dnst − Dst ) i ZL + MI g cos 2ωt
for handling most high frequency voltage ripple. The ⎪⎩ dt 2
maximum high frequency voltage ripple occurs during shoot- ⎧⎛ Dnst ⎞ ⎛ ⎞ di ZL
LZL
through period and PV module only delivers power to input ⎪⎜⎜ ⎟⎟V pv = V ZC + ⎜⎜ ⎟⎟
D
⎪⎝ nst − Dst ⎠ D
⎝ nsht − D st ⎠ dt
capacitor. In order to achieve good voltage performance, high
⎪
frequency voltage ripple is limited with 1%. The capacitance ⎪⎛ Dnst − Dst ⎞ ⎡⎛ 1 ⎞ ⎛ Dst ⎞ ⎛ Cin ⎞ dV pv ⎤
can be determined by: ⎪⎜⎜ D ⎟⎟ ⎢⎜⎜ ⎟⎟ i pv − ⎜⎜ ⎟⎟ i ZL − ⎜⎜ ⎟⎟ ⎥
⎪⎝ nst ⎠ ⎢⎣⎝ Dnst − Dst ⎠ ⎝ Dnst − Dst ⎠ ⎝ Dnst − Dst ⎠ dt ⎥⎦ (6)
Pmax (1 − M ) Pmax (1 − M ) ⎨
Cin = = (3) ⎪ 1 ⎛ 1 ⎞
2 f swV pv _ low ΔV pv _ hf 2 f swV pv2 _ low × 1% ⎪ = 2i ZL −
D ⎜ − 2 MI g cos2ωt + Dst i ZL ⎟
⎪ nst ⎝ ⎠
where ΔVpv_hf is the allowed maximum input capacitor high ⎪⎛ C ⎞ dV ZC ⎛ 1 ⎛ 1⎞ ⎞
⎪⎜ ZC ⎟ = i ZL − ⎜⎜ ⎟⎟ ⎜ − MI g cos2ωt + Dst i ZL ⎟
frequency voltage ripple, Pmax is 750W. ⎜ ⎟
⎩⎪⎝ Dnst ⎠ dt ⎝ Dnst ⎠ ⎝ 2 ⎠
C. Z-source capacitor design where Dnst = M and Dst = 1 − M in the worst case;
The Z-source capacitor is used to handle the DFF voltage 1 M
ripple and partly high frequency voltage ripple. In order to is = − I g cos 2ωt .
2 Dnst
obtain suitable Z-source capacitance, the Z-source inverter
operation mode is firstly analyzed in three different operation According to (6) and Fig.6, the equivalent AC circuit
modes as shown in Fig.6. The relationship between voltage, model is developed as shown in Fig.7. Due to the DFF
current and operation mode can be expressed by: current ripple is absorbed by Z-source network, AC
component of PV current can be ignored. Therefore, one can
⎧ diZL
⎪VZL = LZL
dt
( ) (
= DstVZC + D0 V pv − VZC + D1 V pv − VZC ) obtain the relationship of current and voltage as follows:
⎪ ⎧⎛ 1 − M ⎞
⎪ = DnstV pv − ( Dnst − Dst )VZC ⎪⎜ ⎟ iZL + iCin + iZC + iZL = 0
⎪ ⎪⎝ M ⎠
⎪i dV pv ⎪⎪
⎪ cin
⎨
= Cin
dt
( ) (
= Dst i pv + D0 i pv − 2iZL + D1 i pv − 2iZL + iLf ) (4) ⎨iZL − iZC − is − ⎜
⎛1− M ⎞
⎟ iZL = 0 (7)
⎪ ⎝ M ⎠
⎪ = i pv − 2 Dnst iZL + MI g sin 2 ωt
⎪ ⎪i Z ' = i Z ' + i Z '
⎪ dVZC ⎪ Cin Cin ZL ZL ZC ZC
⎪ iZC = CZC
dt
(
= − Dst iZL + D0iZL + D1 iZL − iLf ) ⎪⎩
⎪
⎪⎩ = ( Dnst − Dst ) iZL − MI g sin 2 ωt V ZL i ZL
where Dst is the shoot-through duty ratio; Dnst = D0+ D1 is the LZL
non-shoot-through duty ratio; D0 is tradition zero duty ratio; i cin D −D is
nst st
D1=Msinωt is active state duty ratio; iLf= Igsinωt is the AC
+

filter current; ω=2π×60 (rad/s); Ig is the peak value of the + Dnst V ZC

V
grid current. Dnst − Dst PV C ZC
1 D D −D Dst
Among AC and DC components included in (4), AC i pv st i nst st C D
nst i
D D ZL 2
Dnst
in
Dnst ZL
components are useful for the Z-source capacitors design. nst nst i ZC
They can be extracted from (5) and then converted as (6):

Fig.7 The equivalent AC circuit model of Z-source inverter

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 After getting the current iCin , iZC and iZL , the peak-peak
voltage ripple on input capacitor ΔVpv, Z-source capacitor
ΔVZC and DC link after Z-source network ΔVdc can be ΔV pv
calculated by (8).

⎡ ⎛ ' 1 ' ⎞ ' ⎤

⎢ ⎜ Z ZL − M Z ZC ⎟ Z Cin ⎥ ΔVZC
⎢ ⎝ ⎠ ⎥
⎢ ' ' ⎛ 2M − 1 ⎞ ' ⎥
⎢ 2 Z Cin + Z ZL + ⎜ M ⎟ ZC ⎥ Z
⎢ ⎝ ⎠ ⎥
⎢ ⎛ 1 ' ⎞ '
⎥
⎡ ΔV pv ⎤ ⎢ '
⎜ − Z ZL − M Z Cin ⎟ Z ZC ⎥
⎢ ⎥ ⎢ ⎝ ⎠ ⎥ Ig (8)
⎢ Δ V =
⎥ ⎢ ΔVdc
ZC
⎛ 2M − 1 ⎞ ' ⎥
⎢⎣ ΔVdc ⎥⎦ ⎢ 2 Z Cin + Z ZL + ⎜
' '
⎟ Z ZC ⎥
⎢ ⎝ M ⎠ ⎥
⎢ ' ' 1 ' ' ' ' ⎥ CZC (μF)
⎢ −2 Z ZL Z ZC − Z Cin Z ZC − Z ZL Z Cin ⎥
⎢ M ⎥ Fig. 8 The relationship between voltages ripples ΔVpv, ΔVZC, ΔVdc and CZC
⎢ 2 Z ' + Z ' + ⎛ 2M − 1 ⎞ Z ' ⎥
⎢ Cin ZL ⎜ M ⎟ ZC ⎥
⎣ ⎝ ⎠ ⎦
⎛ ⎛ 2M − 1 ⎞ ⎞ ⎛ 1 ⎞
where '
Z Cin = 1/ ⎜ ω ' ⎜ 2 ⎟ Cin ⎟ ; '
Z ZC = 1/ ⎜ ω ' CZC ⎟ ;
⎝ ⎝ M ⎠ ⎠ ⎝ M ⎠
⎛ ⎛ 1 ⎞ ⎞
= 1/ ⎜ ω ' ⎜ ⎟ LZL ⎟ ; ω = 2π × 120 .
' '
Z ZL
⎝ ⎝ 2 M − 1 ⎠ ⎠
Based on (2), (3) and (8), the relationship between
voltages ripples ΔVpv, ΔVZC, ΔVdc and CZC can be obtained in
the Fig.8. It can be seen from Fig.8 that the ΔVpv is highest.
In order to achieve good voltage performance and power
density, ΔVpv is limited with 5%. Fig.9 shows the
relationship among Cin, CZC and ΔVpv. It is obvious that Z-
source capacitors can handle the DFF voltage ripple better )
Cin (μF) (μF
than input capacitor. C ZC

IV. EFFICIENCY ANALYSIS Fig.9 Input capacitor voltage ripple with different input capacitance Cin
and Z-source capacitor CZC
The commercial devices selection and switching pattern network can be improved.
are both critical for the ZSIM efficiency. The detail Z-source The switching losses and conduction losses of the active
network parameters and commercial device selection for each switches are relative to the switching pattern. In this
module in Fig.4 are designed in Table II. Considering the efficiency analysis, unipolar & frequency multiplication
actual operation current, each device includes two 200V GaN method is applied. The following power loss analysis focuses
devices in parallel. In order to reduce the size of Z-source on ‘Module1’ in Fig.4.
network and effectively handle the DFF and high frequency
ripple, two hybrid capacitors are series and then paralleled A. GaN devices power loss
with one ceramic capacitor, which composes one Z-source As mentioned above, each ZSIM includes eight GaN
capacitor CZC. The hybrid capacitors are used to handle DFF devices. The power loss of GaN devices includes mainly
power oscillation and the ceramic capacitor deals with high switching loss and conduction loss. The instantaneous
frequency ripple. By this way, the efficiency of Z-source currents on Z-source inductor and AC inductor filter will
TABLE II: Z-SOURCE NETWORK PARAMETERS AND COMMERCIAL DEVICE
Device Parameters
Switching Device
S1~S4 GaN N/A Vds=200V Ic=12A Rdson=25mΩ
Cell
Vc=100V@85ºC,
Hybrid Capacitor EVANS THRQ5 7500μF Iripple=6A@tr=30 ºC Resr_hy=35m Ω
Vc=60V@125 ºC
CZC
GaN
Ceramic Capacitor 25 μF Vc=200V Iripple=10A Resr_ce=5m Ω
AMC_201P02W256KJ4C
Cin Ceramic Capacitor AMC_201P02W256KJ4C 25 μF Vc=200V Iripple=10A Resr_ce=5m Ω
LZL Ferrite Inductor EI30 18μH N/A Irms=13A Ron=5.2m Ω
D Schottky Diode On Semi MBRF20200CT N/A Vrrm=200V IF=20A VF=0.8V

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 TABLE III: GAN DEVICES SWITCHING PATTERN IN ONE SWITCHING where Vdc is the dc link voltage 135V of inverter as shown in
CYCLE Fig.4.
Switch S1 S2 S3 S4
Period (D1) (D2) (D3) (D4)
State The shoot-through period can be obtained in (11):
t0-t1 on off off on Active ⎡ 1 ⎛ V pv _ low ⎞ ⎤
Tst = ⎢ ⎜ 1 − ⎟ Ts ⎥ (12)
on Traditional
t1-t2 on
(D2)
off off
zero ⎣⎢ 2 ⎝ Vdc ⎠ ⎦⎥
t2-t3 on on on off Shoot-through where Vpv_low is 60V, Vdc is 135V and Ts is 8µs.
Traditional In one switching cycle, the total input charge Qin should
t3-t4 on on off off
zero be equal to the total output charge Qout. As shown in Fig.6,
t4-t5 on
off
off on Active the total input charge can be expressed as:
(D2)
Qin = I pvTs (13)
t5-t6 on off off on Active
on Traditional where I pv = Pmax V pv _ low is 12.5A in the most challenge case.
t6-t7 off off
(D3)
on
zero During shoot-through state and traditional zero state, ILf (n)
t7-t8 off on on on Shoot-through is zero. So the total charge on the dc side of inverter can be
Traditional given by:
t8-t9 off off on on
zero
off QLf = I Lf (n) D (n)Ts ( n = 1, 2, , N s ) (14)
t9-t10 on off
(D3)
on Active
The total charge on the Z-source inductor can be written
Switching
times(on/off)
1 1 1 1 as:
Switching QZL = I ZL (n) (Ts − Tst ) ( n = 1, 2, , N s ) (15)
on-off
Transient
ILf(n) 2 IZL(n) 2 IZL(n) ILf(n) where IZL (n) is the instantaneous current through Z-source
current inductor.
Based on (12)-(14) and ignoring the charge on input
dominate the power loss, which can be derived as follows. capacitor Cin, the relationship between Qin and Qout can be
The instantaneous equivalent grid voltage for each ZSIM expressed as:
in half of fundamental cycle can be expressed as: Qin = 2QZL − QLf (16)
⎛ n ⎞ Accordingly, IZL (n) can be calculated by:
Vg (n) = Vg _ peak sin ⎜ π ⎟ ( n = 1, 2, , N s ) (9)
⎝ Ns ⎠ I Lf (n) D ( n ) Ts + I pvTs
I ZL ( n ) = ( n = 1, 2, , N s ) (17)
where Vg_peak is the peak value of the equivalent grid voltage, 2 (Ts − Tst )
that is 60 2 V. Ns is the number of switching frequency in In view of Bline and v1 as shown in Fig.5, as well as the
fs unipolar & frequency multiplication method application, the
half of fundamental frequency N s = 1040 .
2 fg switching pattern in one switching cycle is addressed in Table
The instantaneous current through AC filter inductor in III and Fig.10. The GaN devices S1-S4 turn on and off only
half of fundamental cycle can be given by: once in one switching cycle, respectively. Due to the free-
⎛ n ⎞ wheeling diode (D2 and D3), the soft-switching can be
I Lf (n) = I Lf _ peak sin ⎜ π ⎟ ( n = 1, 2, , N s ) (10) achieved at t2 and t3 for S2, and t7 and t8 for S3. In these
⎝ Ns ⎠ transient processes, the switching loss for S2 and S3 can be
where ILf_peak is the peak value of the AC filter inductor ignored. The switch-on and switch-off instantaneous currents
750 for S1-S4 are ILf(n), 2IZL(n), 2IZL(n), ILf(n), respectively. So
current, that is iLf _ peak = 2 A.
the turn-on energy loss for each ZSIM in half of fundamental
60
The duty cycle can be determined as: cycle can be calculated as:
N s⎡
Vg (n) tri + tfu tri + tfu ⎤
D ( n) = ( n = 1, 2, , N s ) (11) Esw _ on = ∑ ⎢2iVdc i I Lf (n)i + 2iVdc i2i I ZL (n)i (18)
Vdc n =1 ⎣ 2 2 ⎥⎦

(a) (b) (c) (d) (e)

Fig.10 Switching patterns under different operation modes in half of switching cycle: (a) active state (t0-t1); (b) traditional zero state (t1-t2); (c) shoot-through
state (t2-t3); (d) traditional zero state (t3-t4); (e) shoot-through state (t4-t5)

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where tri is the current rise time, tfu is the voltage fall time. Ns
The calculation of tri and tfu can refer to [11]. Econ = ∑ [ Econ1 + Econ 2 + Econ3 + Econ 4 ] (25)
The turn-off energy loss for each ZSIM in half of n =1

fundamental cycle can be derived by: As mentioned above, each device includes two 200V GaN
Ns devices in parallel. So the above conduction energy loss will
⎡ tru + tfi tru + tfi ⎤
Esw _ off = ∑ ⎢2iVdc i I Lf (n)i + 2iVdc i2i I ZL (n)i (19) be halved. Therefore, the GaN device conduction loss can be
n =1 ⎣ 2 2 ⎥⎦ derived by:
where tru is the voltage rise time, tfi is the current fall time. ⎛E ⎞
The calculation of tru and tfi can also refer to [11]. Pcon = 120i⎜ con ⎟ (26)
⎝ 2 ⎠
Consequently, the switching loss for GaN devices can be
expressed as: B. Input diode power loss
(
Psw = 120i Esw _ on + Esw _ off ) (20) The input diode power loss consists of switching loss and
conduction loss. However, the switching loss is very small
The conduction losses in GaN devices can be calculated
and can be ignored. The average current on diode is equal to
using a GaN –approximation with the drain-source on-state
Ipv. So the conduction loss of input diode can be obtained by:
resistance (Rdson) and instantaneous current on GaN devices.
Pdcon = VF I pv (27)
Fig.10 shows the instantaneous current on S1-S4 under three
operation modes from t0-t5.In the active state in (a), S1 and S4 where VF is the forward voltage drop of the diode.
turn on simultaneously. The instantaneous current is ILf(n). In C. Z-source inductor power loss
the traditional zero state in (b), S1 and S2 turn on The Z-source inductor power loss is composed of core
simultaneously. The soft turn-on for S2 can be achieved due loss and winding loss as follows:
to the free-wheeling diode D2. The instantaneous current is
PZL = Pcore + Pcop = kbVe + Ron I 2 (28)
ILf(n). In the shoot-through state shown in (c), the S1 and S3 ZL _ rms
switch on at the same time, and S2 is still on. In this case, the where kb is the loss coefficient, Ve is the volume of the core
current on S1 is ILf(n)+2IZL(n). The currents through S3 and shown in Table II. Ron is the resistance of the winding. IZL_rms
S2 are 2IZL(n) and ILf(n), respectively. In the traditional zero is the root mean square (RMS) value of the Z-source inductor
state in (d), S1 and S2 turn on simultaneously. The current, which can be obtained by (29):
instantaneous current is ILf(n). In the active state in (e), S1 Ns
and S4 turn on simultaneously. The soft turn-off for S2 can I ZL _ rms = 120i∑ ⎡⎣ I ZL
2
( n )iTs ⎤⎦ (29)
be achieved due to the free-wheeling diode D2. The n =1
instantaneous current is ILf(n). D. Z-source capacitor power loss
Therefore, the equivalent conduction loss for S1 in half of
switching cycle can be given by: Aforementioned, each Z-source capacitor consists of two
series hybrid capacitors and one paralleled ceramic capacitor.
⎛T T ⎞ T 2
The hybrid capacitors mostly contribute to handle DFF power
Econ1 = ⎜ s − st ⎟ I Lf2 (n) Rdson + st ⎡⎣ I Lf (n) + 2i I ZL (n) ⎤⎦ Rdson (21)
⎝2 2 ⎠ 2 oscillation and the ceramic capacitor is used to deal with high
The equivalent conduction loss for S2 in half of switching frequency ripple. Therefore, the Z-source capacitor power
cycle can be expressed as: loss is composed of power loss on hybrid capacitor and
⎛T ⎞ power loss on ceramic capacitor.
Econ 2 = ⎜ st + TZ ⎟ I Lf2 (n) Rdson (22) As illustrated in Fig.6, the Z-source capacitor
⎝ 2 ⎠ instantaneous current in shoot-through state is IZL(n). In the
where Tz is the traditional zero period in half of switching traditional zero state, the current is -IZL(n). In the active state,
cycle. the current is ILf(n)-IZL(n). In order to investigate the Z-source
The equivalent conduction loss for S3 in half of switching capacitor power loss, the average current of Z-source
cycle can be calculated as: capacitor in one switching cycle is derived primarily by:
T ⎡ ⎤
Econ 3 = st [ 2i I ZL (n)] Rdson ⎛ Tst ⎞
2
(23)
2 ⎢( − I ZL ( n ) )i⎜1 − D ( n ) − ⎟ ⎥
Ts ⎠
The equivalent conduction loss for S4 in half of switching I ZC _ avg ( n ) = ⎢ ⎝ ⎥ (30)
cycle can be written as: ⎢ Tst ⎥
⎛T T ⎞ ⎢⎣
( )
⎢+ I Lf ( n ) − I ZL ( n ) i D ( n ) + I ZL ( n )i ⎥
Ts ⎥⎦
Econ 4 = ⎜ s − st − TZ ⎟ I Lf2 (n) Rdson (24)
⎝ 2 2 ⎠ The RMS value of Z-source capacitor current can be
Accordingly, the conduction energy loss for each ZSIM in calculated as:
half of fundamental cycle can be derived by:

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 ZL ( n )i(1 − D ( n ) )iTs +
Ns ⎡ I
2
⎤ TABLE IV: POWER LOSS FOR EACH ZSIM
Num
I ZC _ rms = 120i∑ ⎢ ⎥ (31) Device
ber
Power Loss Percentage
n =1 ⎢ I ( ) ⎥
2

⎣ Lf
− I ZL ( n ) i D ( n )iTs⎦ Switching loss 7.649W 23.0%
GaN 8 54.9%
Conduction loss 10.589W 31.9%
The above IZC_rms is separated into two parts: the RMS
Switching loss 0W 0
values of Z-source capacitor current at 120Hz and other high Diode 1 30.1%
Conduction loss 10W 30.1%
frequency.
Z-source Core loss 0.772W 2.3%
The RMS value of Z-source capacitor current at 120Hz is Inductor
2 7.5%
Copper loss 1.704W 5.2%
given by: Z-source
Ns 2 ESR loss 2.25W 6.8% 6.8%
Capacitor
I ZC _ rms _120 = 120i∑ I 2
ZC _ avg ( n )iTs (32) Input
1 ESR loss 0.324W 0.7% 0.7%
n =1 Capacitor
So the RMS value of Z-source capacitor current at other Efficiency=(750-
Total 33.288W 33.288)/750=95.
high frequency is obtained by: 56%
2 2
I ZC _ rms _ hf = I ZC _ rms − I ZC _ rms _120 (33)
E. Input capacitor power loss
As shown in Table II, the equivalent impedance of two
The input capacitor power loss is related to the mean
series hybrid capacitors is calculated as:
value of input capacitor current and ESR. The input capacitor
1 is used to handle high frequency ripple, so the ceramic
Z hy = 2i Resr _ hy + (34)
j 2iπ i2i f sw i2iChy capacitor is selected as shown in Table II. As described in
where Resr_hy is the equivalent series resistor (ESR) of the Fig.6, the input capacitor instantaneous current in shoot-
hybrid capacitor, fsw is the switching frequency, Chy is the through state is Ipv. In the traditional zero state, the current is
capacitance of hybrid capacitor. Ipv-2IZL(n). In the active state, the current is Ipv+ ILf(n)-2IZL(n).
The equivalent impedance of the ceramic capacitors is Accordingly, the RMS value of input capacitor current can be
calculated as: expressed as:
1 ⎡ I 2 ( n )iT + ⎤
Z ce = Resr _ ce + (35) ⎢ pv st
⎥
j 2iπ i2i f sw iCce Ns

Icin _ rms = 120i∑ ⎢ I pv − 2i I ZL ( n) i( Ts − Ts i D ( n) − Tst ) ⎥ (39)

( )
2
where Resr_ce is the ESR of the ceramic capacitor, Cce is the ⎢ ⎥
n =1
capacitance of ceramic capacitor. ⎢ ⎥
( )
⎢⎣+ I pv + I Lf ( n) − 2i I ZL ( n) i(Ts i D ( n ) ) ⎥⎦
2

So the power loss on hybrid capacitors is expressed as;

⎡⎛ Z ⎞
2
⎤ The power loss of input capacitor can be calculated as:
Phy = ⎢⎜ ce
i I ZC _ rms _ hf ⎟ + I 2 ⎥i Resr _ hy (36) Pcin = I cin _ rms i Resr _ ce (40)
⎢⎜⎝ Z hy + Z ce ⎟
⎠
ZC _ rms _120 ⎥
⎣ ⎦ where Resr_ce is the ESR of the input capacitor.
The power loss on hybrid capacitors is given by; According to the above analysis, the total power loss
⎛ Z hy ⎞
2 includes the switching and conduction loss of GaN devices,
Pce = ⎜ iI ⎟ iR (37) input diode loss, the inductors and capacitors loss on Z-
⎜ Z hy + Z ce ZC _ rms _ hf ⎟ esr _ hy source network, and the input capacitor loss as shown in
⎝ ⎠
The total power loss on Z-source capacitor is presented as: Table IV. The power loss of each 750 W module is calculated
PZC = Phy + Pce (38) around 33.2 watts so the efficiency is around 95%. Fig.10

Fig.10 Power loss distribution chart Fig.11 Efficiency curves of ZSIM using diode and SR

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shows the power loss distribution. Since the proposed [11] Dusan Graovac, Marco Purschel, Andreas Kiep, “MOSFET Power
Losses Calculation Using the Data-Sheet Parameters,” Automotive
topology allows each module to switch at only a fraction of
Power, Application Note, vol. 1.1, July 2006
the 1 MHz system frequency, distribution of power losses to
a larger number of power devices leading to high efficiency
at 1 MHz and air cooling becomes achievable. This
architecture is particularly suitable for PV system where
distributed PV module can be monitored, controlled,
maintained, or replaced if necessary. If synchronous rectifier
(SR) replaces the diode to be in series with PV module, the
efficiency of each z-source inverter module can be increased
from 95% to 96%, shown in Fig.11.
V. CONCLUSION
In this paper, a scalable cascaded Z-source inverter for
residential PV system with 1MHz frequency output has been
presented. The high switching frequency and high efficiency
of modular Z-source inverter cell has been achieved based on
the advanced GaN device, phase-shift PWM technology, and
innovative Z-source network design. In addition, the energy
harvesting capability of the PV system can be improved due
to the independent MPPT control can be realized for each
module using the proposed topology. The comprehensive Z-
source network design is developed and the detail power loss
derivation is explored to evaluate the system efficiency in this
paper.
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