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Miller (hkl) and Miller-Bravais (hkil) Indices

¼

½

y
x
Direction (uvw) and Weber (u’v’tw’) Indices

½ ¼

y
x
Crystal Structure

The structure of BaTiO3, is perovskite family with lattice


parameters a = 3.992 Å and c = 4.036 Å. The atoms are at the
positions: Ti: ½, ½, ½; Ba: 0, 0, 0; O: ½, 0, 0; 0, ½, 0; 0, 0, ½.
Sketch the unit cell in 3-D. What is the number of formula units
in the unit cell?
Crystal Structure

For this structures sketch the simplest unit cell,


give the Bravais lattice and determine the lattice
parameters, the packing factor and the
theoretical density. You may assume that atoms
are touching along cube faces unless not allowed
by other atoms. Large circles represent A atoms:
rA = 1.5 Å, AWA = 100 g/mole. Small circles
represent B atoms: rB = 1.2 Å, AWB = 60
g/mole. NA = 6.02 x 1023 atoms/mole
Stereographic Projection

Sketch the poles (100) for cubic and tetragonal for which c = 2a
and then find the (123) plane in the stereographic projections
given in the following page. Also sketch the unit cell and the (123)
plane in the orientation corresponding to the stereographic
projection.
Sketch of Plane / Unit
Cell

Longitude =
Latitude =
Symmetry

Sketch the difference between 61 and 65


Symmetry

If an atom is located at fractional coordinates (¼, ⅛, ⅙), what


other coordinates must be occupied by the same object for the
space group P42m? How many atoms per cell unit for this P42m
space group?
Crystal Formation

Comment on what might happen


to the dendrite growth shown in
the circled area of the figure
Crystal Characterization

Prove that for FCC cubic crystal, the 3 first peaks in X-ray
diffraction would be (111), (200), and (111) and then find the 5
first peaks for the crystal shown in the figure

Cs

Cl
Crystal Characterization

MgO powder was analyzed by XRD with an x-ray source of Cu


K = 1.5406 Ǻ, and the results are presented in the next page.
Each of diffraction peak has been indexed. Determine the lattice
parameters and its crystallite size based on (200) peak zoomed
after next page.
4500 (200)
4000

3500

3000
Intensity (a.u)

2500

2000 (220)

1500

1000
(111) (222)
500 (311)
0
30 40 50 60 70 80
2 Theta (Deg)
(200)
4500

4000

3500

3000
Intensity (a.u)

2500

2000

1500

1000

500

0
40 41 42 43 44 45
2 Theta (Deg)
Point Defect

 Use Kröger-Vink notation to show the reaction of Si 3N4


added into SiC creating a point defect of silicon vacancy.
 Use Kröger-Vink notation to show the reaction of doping
Al2O3 with MgO to create Mg interstitial point defect.
Line Defect

 Differentiate between edge and screw dislocations in terms of


dislocation line and Burger’s vector
 Show the strength of perfect crystal
 Explain what is Pierls-Nabarro stress
Dislocation Interaction

 Sketch partial dislocation in FCC and show that Shockley


partials is favorable than perfect edge dislocation in terms of
energy
 Explain the difference between FCC and BCC metals in term
of slip systems and their relation to mechanical properties
 Explain how dislocation multiplication occurs according to
Frank-Read theory

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