You are on page 1of 20

BTS 4141N

Smart High-Side Power Switch


1 Channel: 1 x 200mΩ

Features Product Summary


• Short circuit protection Overvoltage protection Vbb(AZ) 47 V
• Current limitation Operating voltage Vbb(on) 12...45 V
• Overload protection On-state resistance RON 200 mΩ
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
SOT-223
restart and hysteresis
• Switching inductive loads 4
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input 3
• Thermal shutdown with restart 2
• ESD - Protection 1 VPS05163

• Loss of GND and loss of Vbb protection


• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)

Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

Page 1 2004-01-27
BTS 4141N

Block Diagram

+ Vbb 4
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
Charge pump Limit for OUT
Voltage
unclamped 1
sensor Level shifter ind. loads Temperature
Rectifier sensor
R
3 in
IN Load
ESD Logic

GND miniPROFET®
2
Signal GND Load GND

Pin Symbol Function


1 OUT Output to the load
2 GND Logic ground
3 IN Input, activates the power switch in case of logic high signal
4 Vbb Positive power supply voltage

Page 2 2004-01-27
BTS 4141N

Maximum Ratings
Parameter Symbol Value Unit
at Tj = 25°C, unless otherwise specified
Supply voltage Vbb -0,31)...48 V
Continuous input voltage2) VIN -10...Vbb
Load current (Short - circuit current, see page 5) IL self limited A
Current through input pin (DC) I IN ±5 mA
Reverse current through GND-pin 3) -I GND -0.5 A
Operating temperature Tj internal limited °C
Storage temperature T stg -55 ... +150
Power dissipation 4) Ptot 1.4 W
Inductive load switch-off energy dissipation 4)5) EAS 0.7 J
single pulse
Tj = 125 °C, IL = 0.5 A
Load dump protection 5) VLoadDump6)= VA + VS VLoaddump V
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 47 Ω 83
Electrostatic discharge voltage (Human Body Model) VESD kV
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin ±1
All other pins ±5

1defined by P
tot
2At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
3defined by P
tot
4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
5not subject to production test, specified by design
6V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.

Page 3 2004-01-27
BTS 4141N

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance @ min. footprint Rth(JA) - - 125 K/W
Thermal resistance @ 6 cm 2 cooling area 1) Rth(JA) - - 70
Thermal resistance, junction - soldering point RthJS - - 7 K/W

Load Switching Capabilities and Characteristics


On-state resistance RON mΩ
Tj = 25 °C, IL = 0.5 A - 150 200
Tj = 125 °C - 270 320
Nominal load current2) IL(nom) 0.7 - - A
Device on PCB 1)
Turn-on time to 90% VOUT ton µs
RL = 47 Ω, VIN = 0 to 10 V - 50 100
Turn-off time to 10% VOUT toff
RL = 47 Ω, VIN = 10 to 0 V - 75 150
Slew rate on 10 to 30% VOUT , dV/dton V/µs
RL = 47 Ω, Vbb = 15 V - 1 2
Slew rate off 70 to 40% VOUT , -dV/dtoff
RL = 47 Ω, Vbb = 15 V - 1 2

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
2Nominal load current is limited by the current limitation ( see page 5 )

Page 4 2004-01-27
BTS 4141N

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Operating Parameters
Operating voltage Vbb(on) 12 - 45 V
Undervoltage shutdown Vbb(under) 7 - 10.5
Undervoltage restart Vbb(u rst) - - 11
Undervoltage hysteresis ∆Vbb(under) - 0.5 -
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Standby current Ibb(off) µA
Tj = -40...85 °C, V IN ≤ 1,2 V - 10 25
Tj = 125 °C1) - - 50
Operating current IGND - 1 1.6 mA
Leakage output current (included in Ibb(off)) IL(off) - 3.5 10 µA
VIN ≤ 1,2 V

Protection Functions2)
Initial peak short circuit current limit IL(SCp) A
Tj = -40 °C, Vbb = 20 V, tm = 150 µs - - 2.1
Tj = 25 °C - 1.4 -
Tj = 125 °C 0.7 - -
Repetitive short circuit current limit IL(SCr) - 1.1 -
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off) VON(CL) 62 68 - V
at VOUT = Vbb - VON(CL), I bb = 4 mA
Overvoltage protection 3) Vbb(AZ) 47 - -
Ibb = 4 mA
Thermal overload trip temperature 4) Tjt 135 - - °C
Thermal hysteresis ∆Tjt - 10 - K
1higher current due temperature sensor
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3see also V
ON(CL) in circuit diagram
4 higher operating temperature at normal function available

Page 5 2004-01-27
BTS 4141N

Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Input
Continuous input voltage1) VIN -102) - Vbb V
Input turn-on threshold voltage VIN(T+) - - 3.0
Input turn-off threshold voltage VIN(T-) 1.82 - -
Input threshold hysteresis ∆VIN(T) - 0.2 -
Off state input current IIN(off) µA
VIN ≤ 1,8 V 20 - -
On state input current IIN(on) - - 110
Input delay time at switch on Vbb td(Vbbon) 150 340 - µs
Input resistance (see page 8) RI 1.5 3 5 kΩ

Reverse Battery
Reverse battery voltage3)2) -Vbb V
RGND = 0 Ω - - 0.3
RGND = 150 Ω - - 45
Continuous reverse drain current2) IS - - 1 A
Tj = 25 °C
Drain-source diode voltage (VOUT > Vbb) -VON - 0.6 1.2 V
IF = 1 A

1At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
2not subject to production test, guaranted by design
3defined by P
tot

Page 6 2004-01-27
BTS 4141N

EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.

Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.

Supply voltage: Vbb = 13.5V Temperature: Ta = 23 ±5°C ;


Load: RL = 220Ω
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.: RGND

Fast electrical transients


Acc. ISO 7637

Test Pulse Test Level Test Results Pulse Cycle Time and
On Off Generator Impedance
1 -200 V C C 500ms ; 10Ω
2 +200 V C C 500ms ; 10Ω
3a -200 V C C 100ms ; 50Ω
3b + 200 V C C 100ms ; 50Ω
41) -7 V C C 0,01Ω
5 175 V E (70V) E (70V) 400ms ; 2Ω
The test pulses are applied at Vbb

Definition of functional status

Class Content
C All functions of the device are performed as designed after exposure to disturbance.
E One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.

Test circuit:
Pulse

Bat.

Vbb

IN PROFET OUT

GND

RL
R GND

1Supply voltage V = 12 V instead of 13,5 V.


bb

Page 7 2004-01-27
BTS 4141N

Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)

Typ. Vbb-Pin Emission at DC-On with 150 Ω-matching network


100

90 1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
80 V B B , n o is e f lo o r
VBB, ON
70

60

50
1 5 0 Ω / 8 -H
dBµV

40

30

20
1 5 0 Ω / 1 3 -N
10

-1 0

-2 0
0 ,1 1 10 100 1000
f / MHz

Typ. Vbb -Pin Emission at PWM-Mode with 150 Ω-matching network


100

90 1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
80 V B B , n o is e f lo o r
VBB, PW M
70

60

50
1 5 0 Ω / 8 -H
dBµV

40

30

20
1 5 0 Ω / 1 3 -N
10

-1 0

-2 0
0 ,1 1 10 100 1000
f / MHz

Test circuit:
5µH 150Ω-Network

Vbb

IN PROFET OUT

GND 5µH

R GND R

For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz)
is inserted between supply and Vbb-pin.

Page 8 2004-01-27
BTS 4141N

Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)

Direct Power Injection: Forward Power CW


Failure criteria: Amplitude and frequency deviation max. 10% at Out

Typ. Vbb-Pin Susceptibility at DC-On/Off


40

35

30

25
dBm

20

15 L im it D e v ic e : BTS 4142
Load: 47 O hm s
VBB, ON
O -M o d e : O N / O FF / PW M
10 C o u p lin g P o in t : VBB
VBB, OFF
M o n it o r in g : O ut
M o d u la t io n : CW
5

0
1 10 100 1000
f / MHz

Typ. Vbb -Pin Susceptibility at PWM-Mode


40

35

30

25
dBm

20

15 L im it D e v ic e : BTS 4142
VBB, PW M Load: 47 O hm s
O -M o d e : ON / OFF / PW M
10 C o u p lin g P o in t : VBB
M o n it o r in g : O ut
M o d u la t io n : CW
5

0
1 10 100 1000
f / MHz

Test circuit:
HF
5µH

Vbb

150Ω PROFET OUT


IN

GND 5µH 150Ω

6,8nF
R GND RL
6,8nF

For defined decoupling and high reproducibility the same choke and the same
150Ω -matching network as for the emission measurement is used.

Page 9 2004-01-27
BTS 4141N

Terms Inductive and overvoltage output clamp

+ V bb
Ibb
V
Z

Vbb V
ON
I IN IL VON
IN PROFET OUT
OUT

GND
V
IN GND
V I
bb GND VOUT
R
GND

VON clamped to 63 V min.

Input circuit (ESD protection)


Overvoltage protection of logic part
Vbb + Vbb

R
I V
Z2
IN

IN
Logic
I
I

GND

GND
R GND
optional
The use of ESD zener diodes as voltage clamp
Signal GND
at DC conditions is not recommended

VZ2=V bb(AZ)=47V min.,


R I=3 kΩ typ., R GND=150Ω
Reverse battery protection

- Vbb

RI
IN

OUT
Power
Logic Inverse
Diode

GND
RGND
RL
optional

Signal GND Power GND

RGND=150Ω, RI=3kΩ typ.,


Temperature protection is not active during inverse
current

Page 10 2004-01-27
BTS 4141N

GND disconnect Inductive Load switch-off energy


dissipation

E bb

Vbb E AS

ELoad
IN OUT Vbb
PROFET

IN PROFET OUT
GND L
=

{
EL
V V V GND
bb IN GND ZL

ER
R
L

GND disconnect with GND pull up


Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
Vbb E AS = E bb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:
IN PROFET OUT

GND IL * L IL * R L
E AS = * ( V b b + | V O U T ( C L )| ) * ln (1 + )
2 * RL | V O U T ( C L )|

V V
V IN GND
bb

Vbb disconnect with charged inductive


load

Vbb

high
IN PROFET OUT

GND

V
bb

Page 11 2004-01-27
BTS 4141N

Typ. transient thermal impedance Typ. transient thermal impedance


ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ min. footprint
Parameter: D=tp/T Parameter: D=tp/T
2
10 10 2

K/W K/W

10 1

Z thJA
10 1
ZthJA

D=0,5
D=0,5 D=0,2
10 0 D=0,2 D=0,1
10 0
D=0,1 D=0,05
D=0,05 D=0,02
D=0,02 D=0,01
D=0,01 D=0
D=0

10 -1 -5 -4 -3 -2 -1 0 1 2 4 10 -1 -5 -4 -3 -2 -1 0 1 3
10 10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

Typ. on-state resistance Typ. on-state resistance


RON = f(Tj) ; Vbb = 15 V ; Vin = high RON = f(V bb); IL = 0.5A ; V in = high

300 300

mΩ mΩ
125°C
RON

RON

200 200

150 150
25°C

100 100
-40°C

50 50

0 0
-40 -20 0 20 40 60 80 100 °C 140 0 5 10 15 20 25 30 35 40 V 50
Tj Vbb

Page 12 2004-01-27
BTS 4141N

Typ. turn on time Typ. turn off time


ton = f(Tj ); R L = 47Ω toff = f(Tj); RL = 47Ω

100 120

µs
µs 15...30V
15V

30V 80
ton

toff
60

60

40
40

20
20

0 0
-40 -20 0 20 40 60 80 100 °C 140 -40 -20 0 20 40 60 80 100 °C 140
Tj Tj

Typ. slew rate on Typ. slew rate off


dV/dton = f(Tj ) ; RL = 47 Ω dV/dtoff = f(Tj); RL = 47 Ω

2 4
V/µs
V/µs

1.6
3
dton

dtoff
-dV
dV

1.4

2.5
1.2
30V
1 2

0.8
1.5
15V
0.6 30V
1
0.4 15V
0.5
0.2

0 0
-40 -20 0 20 40 60 80 100 °C 140 -40 -20 0 20 40 60 80 100 °C 140
Tj Tj

Page 13 2004-01-27
BTS 4141N

Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time
IL(SCp) = f(Tj) ; Vbb = 20V; tm = 150µs toff(SC) = f(Tj,start) ; Vbb = 20V

2 300
A
ms
1.6
I L(SCp)

t off(SC)
1.4
200
1.2

1 150

0.8
100
0.6

0.4
50
0.2

0 0
-40 -20 0 20 40 60 80 100 °C 140 -40 -20 0 20 40 60 80 100 °C 140
Tj Tj

Typ. initial peak short circuit current limit Typ. input current
IL(SCp) = f(Vbb); tm = 150µs IIN(on/off) = f(Tj); V bb = 15 V; VIN = low/high
VINlow ≤ 1,8V; VINhigh = 5V
2 60

-40°C
A
µA

1.5 25°C
I L(SCp)

40 on
I IN

1.25

125°C
1 30 off

0.75
20

0.5

10
0.25

0 0
0 5 10 15 20 25 30 35 40 V 50 -40 -20 0 20 40 60 80 100 °C 140
Vbb Tj

Page 14 2004-01-27
BTS 4141N

Typ. input current Typ. input threshold voltage


IIN = f(VIN); Vbb =15 V VIN(th) = f(T j) ; V bb = 15 V

60 -40°C 3
on

µA 25°C V
off

VIN(th)
40 125°C 2
IIN

30 1.5

20 1

10 0.5

0 0
0 2.5 5 7.5 10 12.5 15 V 20 -40 -20 0 20 40 60 80 100 °C 140
VIN Tj
Typ. input threshold voltage Typ. standby current
VIN(th) = f(Vbb) ; Tj = 25°C I bb(off) = f(T j) ; V bb = 32V ; VIN ≤ 1,2 V

3 22
µA
V
18
on
16
V IN(th)

Ibb(off)

2
off 14

12
1.5
10

1 8

0.5 4

0 0
0 10 20 30 V 50 -40 -20 0 20 40 60 80 100 140
°C
Vbb Tj

Page 15 2004-01-27
BTS 4141N

Maximum allowable inductive switch-off Typ. leakage current


energy, single pulse IL(off) = f(Tj) ; Vbb = 32V ; VIN ≤ 1,2 V
EAS = f(IL ); Tjstart = 125°C
2.5 4

µA
J
3

IL(off)
EAS

2.5
1.5

1
1.5

1
0.5

0.5

0 0
0.2 0.4 0.6 0.8 1 A 1.4 -40 -20 0 20 40 60 80 100 °C 140
IL Tj

Typ. input delay time at switch on Vbb


td(Vbbon) = f(Vbb)

400

µs

300
td(Vbbon)

250

200

150

100

50

0
0 5 10 15 20 25 30 35 40 V 50
Vbb

Page 16 2004-01-27
BTS 4141N

Timing diagrams

Figure 1a: Vbb turn on: Figure 2b: Switching a lamp

IN IN

Vbb
V
OUT

IL

IL
t

t d(Vbbon)
t

Figure 2a: Switching a resistive load, Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition

IN IN

V OUT
VOUT
90%
t on dV/ dtoff

dV/dton t off
10%

IL
IL

t
t

Page 17 2004-01-27
BTS 4141N

Figure 3a: Turn on into short circuit, Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling shut down by overtemperature, restart by cooling
IN IN

V OUT V OUT

Output short to GND normal


Output short to GND
operation

I I I
L L(SCp) L
I I
L(SCr) L(SCr)

t t

Heating up of the chip may require several milliseconds, depending


on external conditions.

Figure 4: Overtemperature: Figure 5: Undervoltage shutdown and restart


Reset if Tj < Tjt

IN IN

Vbb
VOUT

10,5V

Vout

TJ
t

t t d(Vbbon) t d(Vbbon)

Page 18 2004-01-27
BTS 4141N

Package and ordering code


all dimensions in mm

Sales code BTS 4141N


Ordering code, standard (1000 pcs.) Q67060-S6120
Ordering code, optional (4000 pcs.) Q67060-S6127
6.5 ±0.2 1.6 ±0.1
A
3 ±0.1 0.1 max

B
4 +0.2
15˚ max

acc. to
DIN 6784
7 ±0.3

3.5±0.2
0.5 min

1 2 3

0.7 ±0.1 2.3 0.28 ±0.04

4.6

0.25 M A 0.25 M B

GPS05560

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 19 2004-01-27
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.