You are on page 1of 19

NCP5106A, NCP5106B

High Voltage, High and Low


Side Driver
The NCP5106 is a high voltage gate driver IC providing two
outputs for direct drive of 2 N−channel power MOSFETs or IGBTs
arranged in a half−bridge configuration version B or any other
high−side + low−side configuration version A. www.onsemi.com
It uses the bootstrap technique to ensure a proper drive of the
high−side power switch. The driver works with 2 independent inputs.
MARKING
Features DIAGRAMS
• High Voltage Range: Up to 600 V 1 8
• dV/dt Immunity ±50 V/nsec SOIC−8 5106x
• Negative Current Injection Characterized Over the Temperature Range
D SUFFIX ALYW
CASE 751 G
• Gate Drive Supply Range from 10 V to 20 V 1
• High and Low Drive Outputs
• Output Source / Sink Current Capability 250 mA / 500 mA
• 3.3 V and 5 V Input Logic Compatible 1
NCP5106x
• Up to VCC Swing on Input Pins PDIP−8
AWL
YYWWG
• Extended Allowable Negative Bridge Pin Voltage Swing to −10 V P SUFFIX
CASE 626
for Signal Propagation
• Matched Propagation Delays Between Both Channels
• Outputs in Phase with the Inputs 1 5106x
• Independent Logic Inputs to Accommodate All Topologies (Version A) DFN10 ALYWG
• Cross Conduction Protection with 100 ns Internal Fixed Dead Time MN SUFFIX G
CASE 506DJ
(Version B)
• Under VCC LockOut (UVLO) for Both Channels NCP5106 = Specific Device Code
• Pin−to−Pin Compatible with Industry Standards x
A
= A or B version
= Assembly Location
• These are Pb−Free Devices L or WL = Wafer Lot
Y or YY = Year
Typical Applications W or WW = Work Week
• Half−Bridge Power Converters G or G = Pb−Free Package

• Any Complementary Drive Converters (Asymmetrical Half−Bridge, (Note: Microdot may be in either location)

Active Clamp) (A Version Only).


• Full−Bridge Converters PINOUT INFORMATION
VCC 1 VBOOT
IN_HI DRV_HI
IN_LO BRIDGE
GND DRV_LO
8 Pin Package

VCC 1 VBOOT
IN_HI NC
IN_LO DRV_HI
GND NC
DRV_LO BRIDGE
10 Pin DFN Package

ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of
this data sheet.

© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number:


February, 2017 − Rev. 9 NCP5106/D
NCP5106A, NCP5106B

Vbulk +
C1

GND D4
Q1 T1 D1 L1 Out+
Vcc C3
U1 C4 +
GND C3
Vcc VBOOT
IN_HI DRV_HI Lf
NCP1395 Out−
IN_LO Bridge
D2
GND DRV_LO
C6
GND NCP5106 Q2
GND
GND R1

D3

GND U2
Figure 1. Typical Application Resonant Converter (LLC type)

Vbulk +
C1
C5
GND D4
Q1
Vcc C3 T1 D1 L1 Out+
U1 C4
GND +
Vcc VBOOT C3
MC34025 IN_HI DRV_HI
IN_LO Bridge Out−
GND DRV_LO D2
C6
GND NCP5106 Q2
GND
GND R1

D3

GND U2
Figure 2. Typical Application Half Bridge Converter

www.onsemi.com
2
NCP5106A, NCP5106B

VCC VCC VBOOT


UV
DETECT
IN_HI
PULSE LEVEL S Q DRV_HI
TRIGGER SHIFTER R Q

BRIDGE
GND UV
GND DETECT
VCC

IN_LO DRV_LO
DELAY

GND

GND GND
GND

GND

Figure 3. Detailed Block Diagram: Version A

VCC VCC VBOOT


UV
DETECT
IN_HI
PULSE LEVEL S Q DRV_HI
TRIGGER SHIFTER R Q

BRIDGE
CROSS GND UV
GND CONDUCTION DETECT
VCC
PREVENTION

IN_LO DRV_LO
DELAY

GND

GND GND

Figure 4. Detailed Block Diagram: Version B

PIN DESCRIPTION

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Pin Name Description

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IN_HI Logic Input for High Side Driver Output in Phase

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
IN_LO Logic Input for Low Side Driver Output in Phase

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
GND Ground

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
DRV_LO Low Side Gate Drive Output

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC Low Side and Main Power Supply

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VBOOT

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
DRV_HI
Bootstrap Power Supply
High Side Gate Drive Output

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
BRIDGE

ÁÁÁÁÁÁÁ
NC
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Bootstrap Return or High Side Floating Supply Return
Removed for creepage distance (DFN package only)

www.onsemi.com
3
NCP5106A, NCP5106B

MAXIMUM RATINGS
Rating Symbol Value Unit
VCC Main power supply voltage −0.3 to 20 V
VCC_transient Main transient power supply voltage: 23 V
IVCC_max = 5 mA during 10 ms

VBRIDGE VHV: High Voltage BRIDGE pin −1 to 600 V


VBRIDGE Allowable Negative Bridge Pin Voltage for IN_LO Signal Propagation to DRV_LO −10 V
(see characterization curves for detailed results)

VBOOT−VBRIDGE VHV: Floating supply voltage −0.3 to 20 V


VDRV_HI VHV: High side output voltage VBRIDGE − 0.3 to V
VBOOT + 0.3

VDRV_LO Low side output voltage −0.3 to VCC + 0.3 V


dVBRIDGE/dt Allowable output slew rate 50 V/ns
VIN_XX Inputs IN_HI, IN_LO −1.0 to VCC + 0.3 V
ESD Capability:
− HBM model (all pins except pins 6−7−8 in 8 pins 2 kV
package or 11−12−13 in 14 pins package)
− Machine model (all pins except pins 6−7−8 in 8 pins 200 V
package or 11−12−13 in 14 pins package)
Latch up capability per JEDEC JESD78
RqJA Power dissipation and Thermal characteristics °C/W
PDIP−8: Thermal Resistance, Junction−to−Air 100
SO−8: Thermal Resistance, Junction−to−Air 178
DFN10 4x4: Thermal Resistance, Junction−to−Ambient 1 Oz Cu 162
DFN10 4x4: 50 mm2 Printed Circuit Copper Clad
TST Storage Temperature Range −55 to +150 °C
TJ_max Maximum Operating Junction Temperature +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

www.onsemi.com
4
NCP5106A, NCP5106B

ELECTRICAL CHARACTERISTIC (VCC = Vboot = 15 V, VGND = Vbridge, −40°C < TJ < 125°C, Outputs loaded with 1 nF)
TJ −40°C to 125°C

Rating Symbol Min Typ Max Units


OUTPUT SECTION
Output high short circuit pulsed current VDRV = 0 V, PW v 10 ms (Note 1) IDRVsource − 250 − mA
Output low short circuit pulsed current VDRV = VCC, PW v 10 ms (Note 1) IDRVsink − 500 − mA
Output resistor (Typical value @ 25°C) Source ROH − 30 60 W
Output resistor (Typical value @ 25°C) Sink ROL − 10 20 W
High level output voltage, VBIAS−VDRV_XX @ IDRV_XX = 20 mA VDRV_H − 0.7 1.6 V
Low level output voltage VDRV_XX @ IDRV_XX = 20 mA VDRV_L − 0.2 0.6 V
DYNAMIC OUTPUT SECTION
Turn−on propagation delay (Vbridge = 0 V) tON − 100 170 ns
Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 2) tOFF − 100 170 ns
Output voltage rise time (from 10% to 90% @ VCC = 15 V) with 1 nF load tr − 85 160 ns
Output voltage fall time (from 90% to 10% @VCC = 15 V) with 1 nF load tf − 35 75 ns
Propagation delay matching between the High side and the Low side @ 25°C (Note 3) Dt − 20 35 ns
Internal fixed dead time (only valid for B version) (Note 4) DT 65 100 190 ns
Minimum input width that changes the output tPW1 − − 50 ns
Maximum input width that does not change the output SOIC−8, PDIP−8 tPW2 20 − − ns
DFN10 15 − −

INPUT SECTION
Low level input voltage threshold VIN − − 0.8 V
Input pull−down resistor (VIN < 0.5 V) RIN − 200 − kW
High level input voltage threshold VIN 2.3 − − V
Logic “1” input bias current @ VIN_XX = 5 V @ 25°C IIN+ − 5 25 mA
Logic “0” input bias current @ VIN_XX = 0 V @ 25°C IIN− − − 2.0 mA
SUPPLY SECTION
VCC UV Start−up voltage threshold VCC_stup 8.0 8.9 9.9 V
VCC UV Shut−down voltage threshold VCC_shtdwn 7.3 8.2 9.1 V
Hysteresis on VCC VCC_hyst 0.3 0.7 − V
Vboot Start−up voltage threshold reference to bridge pin Vboot_stup 8.0 8.9 9.9 V
(Vboot_stup = Vboot − Vbridge)
Vboot UV Shut−down voltage threshold Vboot_shtdwn 7.3 8.2 9.1 V
Hysteresis on Vboot Vboot_hyst 0.3 0.7 − V
Leakage current on high voltage pins to GND IHV_LEAK − 5 40 mA
(VBOOT = VBRIDGE = DRV_HI = 600 V)
Consumption in active mode (VCC = Vboot, fsw = 100 kHz and 1 nF load on both driv- ICC1 − 4 5 mA
er outputs)

Consumption in inhibition mode (VCC = Vboot) ICC2 − 250 400 mA


VCC current consumption in inhibition mode ICC3 − 200 − mA
Vboot current consumption in inhibition mode ICC4 − 50 − mA
1. Parameter guaranteed by design.
2. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design.
3. See characterization curve for Dt parameters variation on the full range temperature.
4. Version B integrates a dead time in order to prevent any cross conduction between DRV_HI and DRV_LO. See timing diagram of Figure 10.
5. Timing diagram definition see: Figure 7, Figure 8 and Figure 9.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

www.onsemi.com
5
NCP5106A, NCP5106B

IN_HI
IN_LO

DRV_HI
DRV_LO

Figure 5. Input/Output Timing Diagram (A Version)

IN_HI

IN_LO

DRV_HI

DRV_LO

Figure 6. Input/Output Timing Diagram (B Version)

IN_HI 50% 50%


(IN_LO)
tr tf
ton toff

90% 90%
DRV_HI
(DRV_LO) 10% 10%

Figure 7. Propagation Delay and Rise / Fall Time Definition

www.onsemi.com
6
NCP5106A, NCP5106B

IN_LO
&
50% 50%
IN_HI
ton_HI
toff_HI

Delta_t 90%
DRV_HI
10%
ton_LO
Delta_t

toff_LO 90%

DRV_LO
10% Matching Delay 1 = ton_HI − ton_LO
Matching Delay 2 = toff_LO − toff_HI

Figure 8. Matching Propagation Delay (A Version)

IN_HI 50% 50%

toff_HI
ton_HI
90%
DRV_HI
10%

Matching Delay1=ton_HI−ton_LO
Matching Delay2=toff_HI−toff_LO
IN_LO 50% 50%

toff_LO ton_LO

90%
DRV_LO
10%

Figure 9. Matching Propagation Delay (B Version)

www.onsemi.com
7
NCP5106A, NCP5106B

IN_HI

IN_LO

DRV_HI

DRV_LO

Internal Deadtime Internal Deadtime

Figure 10. Input/Output Cross Conduction Output Protection Timing Diagram (B Version)

www.onsemi.com
8
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

140 140
TON, PROPAGATION DELAY (ns)

TON, PROPAGATION DELAY (ns)


120 120 TON Low Side
TON High Side
100 100

80 80

60 60
TON High Side
40 TON Low Side 40

20 20

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 11. Turn ON Propagation Delay vs. Figure 12. Turn ON Propagation Delay vs.
Supply Voltage (VCC = VBOOT) Temperature

140 140
TOFF, PROPAGATION DELAY (ns)

TOFF, PROPAGATION DELAY (ns)


120 120
TOFF Low Side
100 100 TOFF Low Side

80 80 TOFF High Side

60 60
TOFF High Side
40 40

20 20

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)
Figure 13. Turn OFF Propagation Delay vs. Figure 14. Turn OFF Propagation Delay vs.
Supply Voltage (VCC = VBOOT) Temperature

140 160
TOFF PROPAGATION DELAY (ns)
TON, PROPAGATION DELAY (ns)

120 140

120
100
100
80
80
60
60
40
40
20 20

0 0
0 10 20 30 40 50 0 10 20 30 40 50
BRIDGE PIN VOLTAGE (V) BRIDGE PIN VOLTAGE (V)
Figure 15. High Side Turn ON Propagation Figure 16. High Side Turn OFF Propagation
Delay vs. VBRIDGE Voltage Delay vs. VBRIDGE Voltage

www.onsemi.com
9
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

160 140

140 120
TON, RISETIME (ns)

120
100

TON, RISETIME (ns)


tr Low Side
100 tr High Side
80
80
60 tr High Side
60
40
40
tr Low Side
20 20

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 17. Turn ON Risetime vs. Supply Figure 18. Turn ON Risetime vs. Temperature
Voltage (VCC = VBOOT)

80 70

70 60
60
TOFF, FALLTIME (ns)

TOFF, FALLTIME (ns)

50
tf Low Side tf High Side
50
40
40
30
30
20
20
tf High Side
tf Low Side
10 10

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 19. Turn OFF Falltime vs. Supply Figure 20. Turn OFF Falltime vs. Temperature
Voltage (VCC = VBOOT)

20 200
PROPAGATION DELAY MATCHING (ns)

180
160
15
140
DEAD TIME (ns)

120
10 100
80
60
5
40
20
0 0
−40 −20 0 20 40 60 80 100 120 −40 −20 0 20 40 60 80 100 120
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 21. Propagation Delay Matching Figure 22. Dead Time vs. Temperature
Between High Side and Low Side Driver vs.
Temperature

www.onsemi.com
10
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

1.4 1.4
LOW LEVEL INPUT VOLTAGE THRESHOLD (V)

1.2 1.2

LOW LEVEL INPUT VOLTAGE


1 1.0

THRESHOLD (V)
0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0 0.0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 23. Low Level Input Voltage Threshold Figure 24. Low Level Input Voltage Threshold
vs. Supply Voltage (VCC = VBOOT) vs. Temperature
2.5 2.5
HIGH LEVEL INPUT VOLTAGE
HIGH LEVEL INPUT VOLTAGE

2 2.0
THRESHOLD (V)
THRESHOLD (V)

1.5 1.5

1 1.0

0.5 0.5

0 0.0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 25. High Level Input Voltage Threshold Figure 26. High Level Input Voltage Threshold
vs. Supply Voltage (VCC = VBOOT) vs. Temperature
4 6
5.5
LOGIC “0” INPUT CURRENT (mA)

LOGIC “0” INPUT CURRENT (mA)

3.5
5
3 4.5
4
2.5
3.5
2 3
2.5
1.5
2
1 1.5
1
0.5
0.5
0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 27. Logic “0” Input Current vs. Supply Figure 28. Logic “0” Input Current vs.
Voltage (VCC = VBOOT) Temperature

www.onsemi.com
11
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

8 10
LOGIC “1” INPUT CURRENT (mA)

LOGIC “1” INPUT CURRENT (mA)


7
8
6

5
6
4

3 4

2
2
1

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)
Figure 29. Logic “1” Input Current vs. Supply Figure 30. Logic “1” Input Current vs.
Voltage (VCC = VBOOT) Temperature

1 1.0
LOW LEVEL OUTPUT VOLTAGE (V)
LOW LEVEL OUTPUT VOLTAGE

0.8 0.8
THRESHOLD (V)

0.6 0.6

0.4 0.4

0.2 0.2

0 0.0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)
Figure 31. Low Level Output Voltage vs. Figure 32. Low Level Output Voltage vs.
Supply Voltage (VCC = VBOOT) Temperature

1.6 1.6
HIGH LEVEL OUTPUT VOLTAGE (V)
HIGH LEVEL OUTPUT VOLTAGE

1.2 1.2
THRESHOLD (V)

0.8 0.8

0.4 0.4

0 0.0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)
Figure 33. High Level Output Voltage vs. Figure 34. High Level Output Voltage vs.
Supply Voltage (VCC = VBOOT) Temperature

www.onsemi.com
12
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

400 400
OUTPUT SOURCE CURRENT (mA)

OUTPUT SOURCE CURRENT (mA)


350 Isrc High Side 350
Isrc High Side
300 300

250 250

200 Isrc Low Side 200


Isrc Low Side
150 150

100 100

50 50

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)
Figure 35. Output Source Current vs. Supply Figure 36. Output Source Current vs.
Voltage (VCC = VBOOT) Temperature

600 600
Isink High Side Isink High Side
OUTPUT SINK CURRENT (mA)

OUTPUT SINK CURRENT (mA)

500 500

400 400
Isink Low Side
300 300
Isink Low Side

200 200

100 100

0 0
10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)

Figure 37. Output Sink Current vs. Supply Figure 38. Output Sink Current vs.
Voltage (VCC = VBOOT) Temperature

0.2 20
HIGH SIDE LEAKAGE CURRENT ON

VOLTAGE PINS (600 V) to GND (mA)


LEAKAGE CURRENT ON HIGH

0.16
HV PINS TO GND (mA)

15

0.12
10
0.08

5
0.04

0 0
0 100 200 300 400 500 600 −40 −20 0 20 40 60 80 100 120
HV PINS VOLTAGE (V) TEMPERATURE (°C)
Figure 39. Leakage Current on High Voltage Figure 40. Leakage Current on High Voltage
Pins (600 V) to Ground vs. VBRIDGE Voltage Pins (600 V) to Ground vs. Temperature
(VBRIGDE = VBOOT = VDRV_HI) (VBRIDGE = VBOOT = VDRv_HI = 600 V)

www.onsemi.com
13
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

100 100

VBOOT CURRENT SUPPLY (mA)


VBOOT SUPPLY CURRENT (mA)

80 80

60 60

40 40

20 20

0 0
0 4 8 12 16 20 −40 −20 0 20 40 60 80 100 120
VBOOT, VOLTAGE (V) TEMPERATURE (°C)
Figure 41. VBOOT Supply Current vs. Bootstrap Figure 42. VBOOT Supply Current vs.
Supply Voltage Temperature

240 400
VCC SUPPLY CURRENT (mA)

200
VCC CURRENT SUPPLY (mA)

300
160

120 200

80
100
40

0 0
0 4 8 12 16 20 −40 −20 0 20 40 60 80 100 120
VCC, VOLTAGE (V) TEMPERATURE (°C)
Figure 43. VCC Supply Current vs. VCC Supply Figure 44. VCC Supply Current vs. Temperature
Voltage
10.0 9.0
9.8 VCC UVLO Shutdown
8.8
UVLO STARTUP VOLTAGE (V)

UVLO SHUTDOWN VOLTAGE (V)

9.6 8.6
VCC UVLO Startup
9.4 8.4
9.2 8.2
9.0 8.0
8.8 7.8 VBOOT UVLO Shutdown

8.6 7.6
VBOOT UVLO Startup
8.4 7.4
8.2 7.2
8.0 7.0
−40 −20 0 20 40 60 80 100 120 −40 −20 0 20 40 60 80 100 120
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 45. UVLO Startup Voltage vs. Figure 46. UVLO Shutdown Voltage vs.
Temperature Temperature

www.onsemi.com
14
NCP5106A, NCP5106B

CHARACTERIZATION CURVES

25 40
ICC+ IBOOT CURRENT SUPPLY (mA)

ICC+ IBOOT CURRENT SUPPLY (mA)


CLOAD = 1 nF/Q = 15 nC CLOAD = 2.2 nF/Q = 33 nC RGATE = 0 R
35
20
30

25
15 RGATE = 10 R
20
10 RGATE = 22 R
15

10
5
RGATE = 0 R to 22 R 5

0 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
SWITCHING FREQUENCY (kHz) SWITCHING FREQUENCY (kHz)
Figure 47. ICC1 Consumption vs. Switching Figure 48. ICC1 Consumption vs. Switching
Frequency with 15 nC Load on Each Driver @ Frequency with 33 nC Load on Each Driver @
VCC = 15 V VCC = 15 V

70 120
ICC+ IBOOT CURRENT SUPPLY (mA)

ICC+ IBOOT CURRENT SUPPLY (mA)


CLOAD = 3.3 nF/Q = 50 nC CLOAD = 6.6 nF/Q = 100 nC RGATE = 0 R
60 RGATE = 0 R
100

50
80
40
RGATE = 10 R RGATE = 10 R
60
30
RGATE = 22 R 40
20 RGATE = 22 R

10 20

0 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
SWITCHING FREQUENCY (kHz) SWITCHING FREQUENCY (kHz)

Figure 49. ICC1 Consumption vs. Switching Figure 50. ICC1 Consumption vs. Switching
Frequency with 50 nC Load on Each Driver @ Frequency with 100 nC Load on Each Driver @
VCC = 15 V VCC = 15 V
0 0
NEGATIVE PULSE VOLTAGE (V)

NEGATIVE PULSE VOLTAGE (V)

−5 −40°C −5 −40°C

−10 −10
25°C
25°C
−15 −15

−20 125°C −20


125°C
−25 −25

−30 −30

−35 −35
0 100 200 300 400 500 600 0 100 200 300 400 500 600
NEGATIVE PULSE DURATION (ns) NEGATIVE PULSE DURATION (ns)
Figure 51. NCP5106A, Negative Voltage Safe Figure 52. NCP5106B, Negative Voltage Safe
Operating Area on the Bridge Pin Operating Area on the Bridge Pin

www.onsemi.com
15
NCP5106A, NCP5106B

APPLICATION INFORMATION
Negative Voltage Safe Operating Area Summary:
When the driver is used in a half bridge configuration, it • If the negative pulse characteristic (negative voltage
is possible to see negative voltage appearing on the bridge level & pulse width) is above the curves the driver
pin (pin 6) during the power MOSFETs transitions. When runs in safe operating area.
the high−side MOSFET is switched off, the body diode of • If the negative pulse characteristic (negative voltage
the low−side MOSFET starts to conduct. The negative
level & pulse width) is below one or all curves the
voltage applied to the bridge pin thus corresponds to the
driver will NOT run in safe operating area.
forward voltage of the body diode. However, as pcb copper
Note, each curve of the Figure 51 (or 52) represents the
tracks and wire bonding introduce stray elements
negative voltage and width level where the driver starts to
(inductance and capacitor), the maximum negative voltage
fail at the corresponding die temperature.
of the bridge pin will combine the forward voltage and the
If in the application the bridge pin is too close of the safe
oscillations created by the parasitic elements. As any
operating limit, it is possible to limit the negative voltage
CMOS device, the deep negative voltage of a selected pin
to the bridge pin by inserting one resistor and one diode as
can inject carriers into the substrate, leading to an erratic
follows:
behavior of the concerned component. ON Semiconductor
provides characterization data of its half−bridge driver to Vcc D2
show the maximum negative voltage the driver can safely Vbulk
operate with. To prevent the negative injection, it is the MUR160
U1 C1
designer duty to verify that the amount of negative voltage NCP5106A 100n M1
1 8
pertinent to his/her application does not exceed the VCC VBOOT
characterization curve we provide, including some safety IN_Hi
2 7
IN_HI DRV_HI R1
margin. 3 6
In order to estimate the maximum negative voltage IN_LO IN_LO BRIDGE
4 5 10R
accepted by the driver, this parameter has been 0 GND DRV_LO
M2
characterized over full the temperature range of the
component. A test fixture has been developed in which we
D1
purposely negatively bias the bridge pin during the MUR160
freewheel period of a buck converter. When the upper gate
voltage shows signs of an erratic behavior, we consider the 0
limit has been reached. Figure 53. R1 and D1 Improves the Robustness of the
Figure 51 (or 52), illustrates the negative voltage safe Driver
operating area. Its interpretation is as follows: assume a
negative 10 V pulse featuring a 100 ns width is applied on R1 and D1 should be placed as close as possible of the
the bridge pin, the driver will work correctly over the whole driver. D1 should be connected directly between the bridge
die temperature range. Should the pulse swing to −20 V, pin (pin 6) and the ground pin (pin 4). By this way the
keeping the same width of 100 ns, the driver will not work negative voltage applied to the bridge pin will be limited
properly or will be damaged for temperatures below by D1 and R1 and will prevent any wrong behavior.
125°C.

ORDERING INFORMATION
Device Package Shipping†
NCP5106APG PDIP−8 (Pb−Free) 50 Units / Rail
NCP5106ADR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel
NCP5106BPG PDIP−8 (Pb−Free) 50 Units / Rail
NCP5106BDR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel
NCP5106AMNTWG DFN10 (Pb−Free) 4000 / Tape & Reel
NCP5106BMNTWG DFN10 (Pb−Free) 4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

www.onsemi.com
16
NCP5106A, NCP5106B

PACKAGE DIMENSIONS

8 LEAD PDIP
CASE 626−05
ISSUE N

NOTES:
D A 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
E 2. CONTROLLING DIMENSION: INCHES.
H 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK-
AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
8 5
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT
E1 TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
1 4 PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE
NOTE 8 LEADS UNCONSTRAINED.
c 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
b2 B END VIEW LEADS, WHERE THE LEADS EXIT THE BODY.
TOP VIEW WITH LEADS CONSTRAINED 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
NOTE 5
INCHES MILLIMETERS
A2 DIM MIN MAX MIN MAX
e/2 A −−−− 0.210 −−− 5.33
A NOTE 3 A1 0.015 −−−− 0.38 −−−
A2 0.115 0.195 2.92 4.95
L b 0.014 0.022 0.35 0.56
b2 0.060 TYP 1.52 TYP
C 0.008 0.014 0.20 0.36
D 0.355 0.400 9.02 10.16
SEATING
PLANE D1 0.005 −−−− 0.13 −−−
A1 E 0.300 0.325 7.62 8.26
C M E1 0.240 0.280 6.10 7.11
D1 e 0.100 BSC 2.54 BSC
eB −−−− 0.430 −−− 10.92
e eB L 0.115 0.150 2.92 3.81
8X b END VIEW M −−−− 10 ° −−− 10 °
0.010 M C A M B M NOTE 6
SIDE VIEW

www.onsemi.com
17
NCP5106A, NCP5106B

PACKAGE DIMENSIONS

SOIC−8 NB
CASE 751−07
NOTES:
−X−
ISSUE AK 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
8 5 PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
1 IN EXCESS OF THE D DIMENSION AT
4 MAXIMUM MATERIAL CONDITION.
−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS INCHES
G
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
C N X 45 _ B 3.80 4.00 0.150 0.157
SEATING C 1.35 1.75 0.053 0.069
PLANE D 0.33 0.51 0.013 0.020
−Z− G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
0.10 (0.004) J 0.19 0.25 0.007 0.010
H M J K 0.40 1.27 0.016 0.050
D
M 0 _ 8 _ 0 _ 8 _
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
0.25 (0.010) M Z Y S X S

SOLDERING FOOTPRINT*

1.52
0.060

7.0 4.0
0.275 0.155

0.6 1.270
0.024 0.050

SCALE 6:1 ǒinches


mm Ǔ

*For additional information on our Pb−Free strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

www.onsemi.com
18
NCP5106A, NCP5106B

PACKAGE DIMENSIONS

DFN10 4x4, 0.8P


CASE 506DJ
ISSUE O

D A B NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
L L 2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM THE

ÇÇÇÇ
L1 TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
ALTERNATE A−1 ALTERNATE A−2

ÇÇÇÇ
WELL AS THE TERMINALS.
PIN ONE E DETAIL A 5. FOR DEVICE OPN CONTAINING W OPTION, DETAIL A
REFERENCE ALTERNATE TERMINAL ALTERNATE CONSTRUCTION A−2 AND DETAIL B AL-

ÇÇÇÇ
CONSTRUCTIONS TERNATE CONSTRUCTION B−2 ARE NOT APPLICABLE.

ÇÇÇÇ ÉÉ ÉÉÉ
MILLIMETERS
2X DIM MIN MAX
A3
A 0.80 1.00

ÉÉ
ÇÇ ÉÉÉ
ÇÇÇ
0.10 C A1 EXPOSED Cu MOLD CMPD
A1 0.00 0.05
A3 0.20 REF
2X 0.10 C b 0.25 0.35
TOP VIEW D 4.00 BSC
D2 2.90 3.10
0.10 C DETAIL B A ALTERNATE B−1 ALTERNATE B−2 E 4.00 BSC
E2 1.85 2.05
DETAIL B E3 0.375 BSC
ALTERNATE e 0.80 BSC
10X CONSTRUCTIONS K 0.90 −−−
0.08 C L 0.35 0.45
A3 SEATING L1 0.00 0.15
NOTE 4 SIDE VIEW A1 C PLANE

0.10 C A B
DETAIL A
D2 10X L RECOMMENDED
1 5 MOUNTING FOOTPRINT
10X
0.10 C A B 3.20 0.60
PACKAGE
OUTLINE
E3
E2

4.30
0.75 2.15

K 10 6
10X b 1
e
10X
0.10 C A B 0.80 0.42
0.05 C NOTE 3 PITCH
BOTTOM VIEW DIMENSIONS: MILLIMETERS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action
Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

◊ www.onsemi.com NCP5106/D
19