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2N3905
C TO-92
BE
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 5.0 V
ICEX Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
IBL Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 0.1 mA 30
VCE = 1.0 V, IC = 1.0 mA 40
VCE = 1.0 V, IC = 10 mA 50 150
VCE = 1.0 V, IC = 50 mA 30
VCE = 1.0 V, IC = 100 mA 15
VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 0.25 V
I C = 50 mA, I B = 5.0 mA 0.40 V
VBE( sat) Base-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 0.65 0.85 V
I C = 50 mA, I B = 5.0 mA 0.95 V
SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, ICS = 10 mA, 35 ns
tr Rise Time I B1 = 1.0 mA ,VOB ( off ) = 3.0 V 35 ns
ts Storage Time VCC = 3.0 V, ICS = 10 mA, 200 ns
tf Fall Time I B1 = IB2 = 1.0 mA 60 ns
Typical Characteristics
250 0.3
V CE = 1 .0V β = 10
0.25
125 °C
200
0.2
150 0.15 25 °C
25 °C
0.1
100 125°C
- 40 °C
0.05
- 40 °C
50 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)
1
1 β = 10
- 40 °C
0.8
0.8
- 40 °C
25 °C
125 °C 0.6 25 °C
0.6
125 °C
0.4 0.4
V CE = 1V
0.2 0.2
0 0
1 10 100 200 0.1 1 10 25
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)
100
vs Reverse Bias Voltage
V = 25V
CB 10
C obo
10
CAPACITANCE (pF)
1 6
4 C ibo
0.1
2
0.01 0
25 50 75 100 125 0.1 1 10
TA - AMBIE NT TEMP ERATURE (° C) REVERSE BIAS VOLTAGE (V)
2N3905
PNP General Purpose Amplifier
(continued)
2 4
I C = 1.0 mA, R S = 200Ω I C = 100 µA
1 2
I C = 100 µA, R S = 2.0 kΩ
0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( kΩ )
ts t off
100 100
TIME (nS)
TIME (nS)
Ic
t on I
tf B1 = 10 t on
VBE(OFF) = 0.5V
10 10
tr
Ic Ic
I B1 = I B2 = t off I = I =
10 B1 B2 10
td
1 1
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0 25 50 75 100 125 150
TEMPERATURE (o C)
2N3905
PNP General Purpose Amplifier
(continued)
100 10
VCE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10
f = 1.0 kHz
h ie - INPUT IMPEDANCE (k Ω)
10 1
1 0.1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
500
h fe - CURRENT GAIN
200
100 100
50
20
10 10
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
TRADEMARKS
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DISCLAIMER
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. G