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Procedia Environmental Sciences 33 (2016) 668 – 673

The 2nd International Symposium on LAPAN-IPB Satellite for Food Security and Environmental
Monitoring 2015, LISAT-FSEM 2015

The diffusion coefficient of lithium tantalite (LiTaO3) with

temperature variations on LAPAN-IPB satellite infra-red sensor
Agus Ismangila*, Irmansyahb, Irzamanb
a
Department of Computer Sciences, Faculty of Mathematics and Natural Sciences, Pakuan University, Indonesia
b
Department of Physics, Faculty of Mathematics and Natural Sciences, Bogor Agricultural University, Indonesia

Abstract

Lithium tantalate, which has chemical formula of LiTaO3, thin films have been grown on a p-type Si substrate (100) by using
chemical solution deposition and spin coating techniques at speed of 3000 rpm for 30 seconds. LiTaO3 thin films were made in
concentration of 2.5M and at annealing temperatures of 550°C, 600°C, 650°C, 700°C, 750°C, and 800°C. The purpose of this
study determines the diffusion coefficient of lithium tantalate (LiTaO3) above the silicon substrate (100) on the p-type annealing
temperature of 550°C, 600°C, 650°C, 700°C, 750°C and 800°C. These thin films were characterized by using LCR meter. The
electrical conductivity values of LiTaO3 films were in the range of 10-6 - 10-5 S/cm, where the higher the electrical conductivity,
the higher the light intensity. This indicates that the LiTaO3 films was a semiconductor material. In addition, the higher the
energy that moves the particles leads to the faster the diffusion. The diffusion coefficients of Li-TaO3 films were in the range of
57 - 391 nm2/s.
© 2016
© 2016TheTheAuthors.
Authors. Published
Published by Elsevier
by Elsevier B.V.is an open access article under the CC BY-NC-ND license
B.V. This
(http://creativecommons.org/licenses/by-nc-nd/4.0/).
Peer-review under responsibility of the organizing committee of LISAT-FSEM2015.
Peer-review under responsibility of the organizing committee of LISAT-FSEM2015
Keywords: Lithium tantalate (LiTaO3);electrical conductivity;diffusion coefficients

* Corresponding author. Tel.: +62-862-5728

E-mail address: a.ismangil.physics@gmail.com

1878-0296 © 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license
(http://creativecommons.org/licenses/by-nc-nd/4.0/).
Peer-review under responsibility of the organizing committee of LISAT-FSEM2015
doi:10.1016/j.proenv.2016.03.122
 Agus Ismangil et al. / Procedia Environmental Sciences 33 (2016) 668 – 673 669

1. Introduction

Ferroelectric materials, especially those based on a mixture of lithium tantalate (LiTaO3), used for the needs of
electronic devices. The role of ferroelectric materials LiTaO3 very interesting to study because in practice it can be
used as an infrared sensor. LiTaO3 is the object studied intensively over the last few years because it has unique
properties [3].
From some of the results of the study, LiTaO3 is non-hygroscopic crystals that are not easily damaged optical
properties, these properties that make the material LiTaO3 superior to other materials [6]. Crystal imperfections or
crystal defects caused by the vacancy of atoms in a crystal. Crystal defects in the form of atomic vacancies,
providing an opportunity for infiltration of foreign atoms. Foreign atoms are also likely to occupy interstitial
positions, especially if the size of the foreign atoms are smaller than the size of atoms parent material. This
interstitial position makes it easy to move over to the foreign atoms or atom itself. Diffusion is an event where there
is a transfer of material through another material. The material transfer takes place because of the atom or particle
always moves by thermal agitation. Although the actual motion is the random movement without any particular
direction, but overall there is a net direction in which the entropy increases. Diffusion is an irreversible process. In
the gas phase and liquid, easy diffusion events occur; the solid phase diffusion also occur, although it takes longer
[11].
In the crystal structure, the vacancy position allows atom adjacent atom moves fill the gap while he himself left
the same place that he contents to be empty. The newly formed vacant positions will give the possibility to be filled
by the atom next to it; and so on. This mechanism is the most likely mechanism for the occurrence of internal
diffusion. Another possibility is the existence of atoms separated from the crystal lattice and into the interstitial
atom and be easy to move. If the dimensions of the diffusing atom is much smaller than atomic dimensions of the
material to be broken, interstitial diffusion easily takes place. This mechanism occurs for example if the carbon,
nitrogen, oxygen, and hydrogen diffuses into the metal. The same thing happened on the diffusion of lithium
tantalate (LiTaO3) into the silicon crystal. The purpose of this study determines the diffusion coefficient of lithium
tantalate (LiTaO3) above the silicon substrate (100) on the p-type annealing temperature of 550°C, 600°C, 650°C,
700°C, 750°C and 800°C.

2. Experimental Method

Materials used in this study was powdered Lithium Acetate [LiO2C2H3], powder Tantalum Oxide [Ta2O5],
solvent 2-methoxyethanol [C3H8O2], the Si substrate (100) p-type, deionized water, acetone PA [CH3COCH3, 58.06
g / mole], methanol PA [CH3OH, 32.04 g / mole], the acid fluoride (HF), glass slide, silver paste, fine copper wire
and aluminum foil. In this study LiTaO3 thin films prepared by the method of chemical solution deposition (CSD)
which has been developed for the growth of perovskite thin films. This method has the advantage that the procedure
is simple, the cost is relatively economical, and get great results. Methods of chemical solution deposition (CSD) is
a method of filmmaking by way of a chemical solution deposition on the substrate surface, then prepared with a spin
coater at a speed of 3000 rpm for 30 seconds each hatching LiTaO3 solution.

T°C Temperature changes

The increase in temperature of 1.7°C / min

T1

Refrigeration

T0

t1 t2 t jam
Fig. 1 The process of annealing
670 Agus Ismangil et al. / Procedia Environmental Sciences 33 (2016) 668 – 673

The purpose of this annealing process is to get a soft silicone material to eliminate the residual stress due to the
heating process, as well as to improve the granules atom. Annealing process is carried out in stages using a furnace
VulcanTM 3-130. purpose LiTaO3 solution annealing to diffuse the silicon substrate starting from room temperature
and then raised to the annealing temperature is 550°C, 600°C, 650°C, 700°C, 750°C and 800°C with temperature
increase of 1.7°C / min and held constant during 8 hours at the annealing temperature. Furthermore, the cooling
process until it returns to room temperature [6]. After successfully growing a thin film LiTaO3 then characterized by
means of LCR Meter HIOKI 3532-50 LCR HiTESTER brands. Research flow diagram can be seen in Fig. 2.

START

Preparation of materials and tools

Preparation Si substrate (100)

Preparation of LiTaO3

Lithium acetate Tantalum oxide 2-metoksietanol

LiTaO3 with the film growth

CDS and spin coating method

Annealing process

No Succeed
Film thickness calculation

Addition of contacts on film

Characterization conductivity

Processing and analysis of data

Writing Journal

ENDS

Fig. 2. Research flow diagram

 Agus Ismangil et al. / Procedia Environmental Sciences 33 (2016) 668 – 673 671

3. Results and Discussions

Diffusion processes can occur in a state of gas, liquid, or solid so that the process of diffusion can occur in the
film lithium tantalate. Diffusion in the polymer occurred involving the movement of long molecules. Migration
atoms diffuse similar as happens in the interstitial migration. But the longer the polymer molecule increasingly
difficult movements occur, and the lower the diffusion coefficient. In the silicon ions are usually located in a central
position tetrahedron surrounded by oxygen ions. Positive ions of alkali can be placed between the tetrahedron with
weak Coulomb force. In thermodynamic, the driving factor for the occurrence of diffusion, namely the spread of
material, is the difference in concentration. This situation is analogous to the flow of electric charge in the event
where the driving factor for the flow of charge is a potential difference. Analogous to electrical events, flux material
that diffuses can be described in Fick's Law.

Fick's first law states that the flux of the diffusing material is proportional to the concentration gradient.
ௗ஼
‫ܬ‬௫ ൌ െ‫ܦ‬ (1)
ௗ௫

D is the diffusion coefficient, dC / dx is the concentration variation

Fick's Second Law states that the rate of change is proportional to the composition of the second derivative
(Laplacian) concentration.

ௗ஼ೣ ௗ మ ஼ೣ
ൌ‫ܦ‬ (2)
ௗ௧ ௗ௫ మ

Vacancy position of atoms in a crystal is a crystal imperfection rather special. Unlike the others, the vacancy is
present in equilibrium in all crystals. In fact a solids-containing impurities can double the number of vacancies, a
matter that would facilitate diffusion. In addition to the vacancy migration, migration can also occur when interstitial
atoms diffuse material small enough compared to the size of atoms penetrate the material. These imperfections do
not interfere with the electrical neutrality, and the crystals remain in the balance, as happened in the presence of the
vacancy. Imperfections which would occur depends on the amount of energy needed to form interstitial cation or
anion vacancies. On the electrical conductivity of ionic crystals at high temperatures occurs due to the diffusion of
ions and electrons almost no contribution. Therefore, the electrical conductivity is proportional to the diffusion
coefficient.
஼௤ మ
ߪ ൌ ݇ቂ ቃ‫ܦ‬ (3)
௞்

ı is the electrical conductivity by ion conduction, C and q is the charge of the concentration and imperfections that a
ct, k depends on the kinds of imperfections; k = 1 for the interstitial ion, k and T are the Boltzmann constant and tem
perature [11].

Measurement of the value of the electrical conductivity of thin film done in 5 different conditions are dark (0
lux), with lamp 1000 lux, 2000 lux, 3000 lux and 4000 lux. From Fig. 2 shows that the value of the electrical
conductivity increases with the increase in light intensity. This is due to the increase in electrical conductivity
electrons in the valence band to the conduction band. Electrons in the conduction band are free to move under the
influence of an electric field so that more electrons excited into the conduction band due to irradiated light that
causes the current to rise, thus the electrical conductivity also increased and vice versa resistance value will decrease
because of the electrical conductivity and resistance to have an inverse relationship [11].
672 Agus Ismangil et al. / Procedia Environmental Sciences 33 (2016) 668 – 673

550 oC
o
600 C
12 650 oC
700 oC
o
750 C
The electrical conductivity (µS/cm)

10
800 oC

0
0 1000 2000 3000 4000

The intensity of light (Lux)

Fig. 3. Relationship electrical conductivity of the intensity of light

The conductivity curve shows the relative conductivity rises as a function of light intensity will increase the value
of the electrical conductivity (Fig. 3.). The value of the electrical conductivity of a material depends on the material
properties. The value of the electrical conductivity of a material can be increased because these materials conduct
electricity. LiTaO3 films electrical conductivity values obtained ranged from 10-6 S / cm to 10-5 S / cm. This
indicates that the film LiTaO3 is a semiconductor material. Effect of temperature on the electrical conductivity
values have a relationship that is proportional, meaning that the annealing temperature increases causing the increase
in the value of the electrical conductivity. This occurs due to the increase in the annealing temperature causes
increased evaporation thin film layer so that the thickness of the thin film layer is reduced and the defect structure
decreases. The increase in conductivity due to electron flow will increase due to the scattering by crystal defects are
likely to decline.
Broadly speaking, the diffusion process occurs because of the displacement of the atomic structure due to the
movement of energy, in this case the movement of the atoms are accelerated when the lithium tantalate movies are
in high temperatures. At high temperatures will result in stretching and movement of the atomic structure which
causes the void between the parent atoms with neighboring atoms. With the aid of a surface treatment process, the
vacancy that occurred between the parent atom and the atomic neighbors will be occupied by other atoms as a result
of the treatment process.

Table 1. Diffusion coefficient with temperature variations and intensity

Annealing Diffusion Literature

temperature coefficient (nm2/s) diffusion
(°C) coefficient at
Intensity Intensity Intensity Intensity Intensity 900°C
0 lux 103 lux 2 103 lux 3 103 lux 4 103 lux (I Song 2004)

550 57 91 117 99 128 153 nm2/s

600 80 106 121 109 142
650 89 159 180 93 113
700 134 202 238 253 312
750 103 98 86 156 166
800 174 317 342 377 393
 Agus Ismangil et al. / Procedia Environmental Sciences 33 (2016) 668 – 673 673

The higher the temperature at which the film lithium tantalate (LiTaO3) is treated annealing at 550°C, 600°C,
650°C, 700°C and 800°C, the energy that moves the particles will also be faster so the speed at the time of diffusion
will also be more high. But at the annealing temperature of 750°C drop in the diffusion process occurs continuing
rise in the temperature of 800°C. Diffusion coefficient values ranging between 57-393 nm2/s literature diffusion
coefficient value of the film lithium tantalite (LiTaO3) at 153 nm2/s. The greater the temperature on the film, the
greater the diffusion coefficient in other words, the faster the diffusion.

4. Conclusions

Based on the results obtained concluded that the electrical conductivity of thin film increases with the increase in
light intensity otherwise the resistance value will decrease and the value of electrical conductivity obtained films
LiTaO3 obtained ranged from 1.90 - 9.95 ȝS/cm results indicate that the thin film LiTaO3 made a semiconductor
material. Film lithium tantalate (LiTaO3) at the time of the diffusion speed is higher with a rise in temperature
generates diffusion coefficient of 57-393 nm2/s, the film lithium tantalate (LiTaO3) is obtained is the forerunner of
infrared sensors.

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