1114 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN, VOL. 1 1 , NO.
9, SEPTEMBER 1992
A Mobility Model Including the Screening Effect in
.
, -__ .- .
MOS Inversion Layer
. 6 ‘i Masayoshi Shirahata, Hiromi Kusano, Norihiko Kotani, Shigeru Kusanoki,
- .‘* and Yoichi Akasaka, Senior Member, IEEE
Abstruct-We propose a new mobility model for MOSFET
device simulation. Our model is the first one that is not only
applicable to both inversion layer and sourceldrain high con-
. .: centration regions of a MOSFET but also takes into account
the screening effect in the inversion layer. The model also in-
cludes an improved normal-field dependence for thin gate oxide
MOSFET’s. The low parallel electric field mobility is estimated
by adding mobilities due to donor scattering, acceptor scatter-
ing and lattice scattering using Matthiesen’s rule. Both mobil-
ities due to donor and acceptor scattering include screening
effect of electrons. The mobility due to lattice scattering is
formed as a function of normal electric field E,, including strong
dependence term of E,, to express surface roughness scatter-
ing. Calculation results of the device simulation using our mo-
bility model show good agreement with the experimental data
- ,
for various channel dopings.
. ..- . more, good agreement between the calculated and exper-
I. INTRODUCTION
I N THE last decade, device simulation has been used to
study various characteristics of and design MOSFET’s.
A mobility model in device simulation is an important pa-
rameter that greatly affects the calculation results. The
mobility model proposed by Yamaguchi [ 11 has widely
been used in device simulators [2], [3]. Its key advantage
is the capability of expressing the carrier flows In both the
inversion layer and source/drain high concentration re-
gions. There is no necessity to distinguish these two types
of flows and, hence, it is easy to implement this model in
a device simulator. However, when we use Yamaguchi’s
model in a device simulator for such advanced MOS-
FET’s that have high substrate concentrations and thin
gate oxides, some problems arise. Lee [4] has pointed out
one of these problems and has proposed a modified
method. Shin et al. [5] have proposed a modelling ap-
proach to derive a mobility expression as a function of a
local electric field for device simulations from a semi-em-
pirical equation that is a function of effective normal field.
They have also showed a mobility expression derived by
Manuscript received January 8, 1991; revised August 22, 1991. This
paper was recommended by Associate Editor T. Toyabe.
M. Shirahata and S . Kusunoki are with the Mitsubishi Electric Corpo-
ration LSI R&D Corporation, Itami, Hyugo, 664 Japan.
H.Kusano is with the Mitsubishi Electric Corporation Asic Design Cen-
ter, Hyugo, 664 Japan. e where Wand q are the width of the MOSFET’s and the
N. Kotani is with the Mitsubishi Electric Corporation Simulation Group,
Hyugo, 664 Japan.
Y. Akasaka is with the Mitsubishi Electric Corporation Advanced De-
sign Technologies Department, Hyugo, 664 Japan.
IEEE Log Number 9200539.
0278-0070/92$03.00 0 1992 IEEE
their approach from a semi-empirical expression proposed
by Schwarz and Russek [6]. However, these previous
model: are applicable only to the inversion layer region,
not to the source/drain high concentration regions, and it
is necessary to distinguish two flows of inversion layer
and source/drain high concentration regions.
In this paper we propose a new mobility model for ad-
vanced MOSFET’s. Our model is the first one that is ap-
plicable not only to both inversion layer and sourceldrain
high concentration regions of a MOSFET, but also takes
into account the screening effect in the inversion layer. In
the model, we also consider an improved normal-field de-
pendence for MOSFET’s with thin gate oxides. Further-
imental results is found for the MOSFET’s with various
channel dopings.
11. MOBILITYMODEL
A . Problems of the Previous Models
According to the scaling law, scaled devices have been
and are being fabricated with higher substrate concentra-
tions and thinner gate oxides. As such, it is necessary to
reevaluate the dependence of high impurity concentra-
tions and high normal electric field used in existing mo-
bility models. When a device simulator based on Yama-
guchi’s mobility model is applied to these devices to
predict their characteristics, the mobility in the inversion
layer is estimated low due to high impurity concentration.
This is inconsistent with the fact that the inversion-layer
mobility of various substrate impurity concentrations fol-
lows the universal curve when plotted as a function of
effective normal field [7]-[9]. By using our own device
simulator, combined with Yamaguchi’s mode1,we simu-
late drain conductance gD in the linear region (V, = 50
mV) of the long-channel MOSFET’s (L = 200 pm) that
have flat impurity profiles. We also estimate the inversion
carrier density NinV and depletion charge density by
numerical integration. Then the inversion-layer mobility
pLefis estimated as
peff = LgD/(wqNinv) (1)
electron unit charge, respectively. The effective field Ee*
is calculated by the following equation:
= q(Ndepl -k Ninv/2)/Esi (2)
 SHIRAHATA er a l . : A MOBILITY MODEL IN MOS INVERSION LAYER 1115

where csl is the dielectric constant of silicon. Lee showed

the consistency of this formula with value obtained from -
0
YAMAGUCHI'S MODEL
TAKAGI'S DATA
{
numerical integration [lo]. The calculation results are I
1
shown in Fig. 1. Two types of discrepancies are revealed
in the figure: (1) The universal curve cannot be predicted
by Yamaguchi's mobility model and (2) discrepancy ex-
c ists in the normal electric field dependence of the mobility
at fields higher than 0.5 mV/cm. As shown in Fig. 2, the
second type of discrepancy is seen in the results obtained
by the model proposed by Schwarz and Russek pointed
--_
out in [11]-[13]. Thus it is necessary to improve the de- 77~10~'

'
I
pendence of normal electric field on the inversion-layer 24~10~'
mobility.
,
L LLLLLUL -LLLLLLUL
LU
B. Present Model 4 5 8 7
Our mobility model is given by 10 10 10 10

~ ( N DN ,A , n , En, Ep) = P I ( N D ,NA, n , EJf(p1, Ep) (3) EFFECTIVE NORMAL FIELD (V/cm)
where N D , N A , n , En, and E, are ionized donor and accep- Fig. 1. Effective mobility versus effective normal field estimated by ( I )
from the results of the device simulation using Yamaguchi's mobility
tor densities, electron density, the electric field compo- model.
nents perpendicular and parallel to the current density
vector, respectively. As in Yamaguchi's model, the term h -- -
f (pI,E,) expresses velocity saturation effect that is based
E
U)
- PRESENT MODEL
on Thomber's scaling law [14]. ? ___ SCHWARZ'S MODEL
N lo4 0 TAKAGI'S DATA
p1( N D , NA, n, En) is low parallel electric field mobility b
that depends on ND, N A , n and E,,. Using Matthiesen's UEo !-
rule, pI is obtained by adding mobilities due to donor >
scattering, acceptor scattering and other scattering-mecb- k
=!
anisms. pl is written as m
0
pl(ND, NA, n , En)-' 5
W
= p2(ND, n1-I + p 3 ( N A 9 n)-' + p 4 ( E n ) - l . (4) L
I-
p2 (ND, n ) is the mobility due to donor sdattering. The o
W
expression was derived by Klaassen [15] from the LL
LL
Caughey and Thomas empirical expression [ 161. p2 is ex- W
pressed as 4 5 e 7
10 10 10 10
~2 ( N D ~n) = d / < ~ -o p m i n ) ( N I /ND)"'
EFFECTIVE NORMAL FIELD (V/cm)
-k pOk"/(pO - (5)
/&"(n/ND)
Fig. 2. Dependence of the effective mobility on effective normal field ac-
where pmln,N I , and a l are parameters and we use the val- cording to (8) and Schwarz and Russek's semi-empirical equations.
ues 92 cm2/V . s, 1.3 X 1017~ m - and ~ , 0.91, respec-
tively, according to [17]. po is bulk mobility of low elec-
tric field and low impurity concentration and we use the If we apply (6) to thep-type substrate region, the mobility
value 1430 cm2/V s. In this expression, Klaassen takes is estimated too low due to low electron concentration.
into account screening of the donors by electrons accord- To escape this wrong estimation, we must make the lower
ing to the statistical screening theory of Ridley [ 181. limit of mobility. We estimate the lower limit of mobility
p3 is the mobility due to acceptor scattering. Although by the expression of Caughey and Thomas [ 161. Strictly
in ref. [ l l ] , the Brooks-Herring treatment for screened speaking, it is inadvisable to apply the expression of
coulomb scattering is adopted, we use a simple formula- Caughey and Thomas to the p-type substrate region where
tion according to the interpretation of Takagi et al. [7]. acceptor density is typically 10'' cmP3 and electron con-
The mobility due to acceptor-scattering in the inversion centration is lo3 cmP3. However, there is no experiment
layer is proportional to N,,,"/NA. So we assume p3 can be to extract the electron mobility at the p-type substrate re-
written as gion and Zd-Vd and ZhVg characteristics are not affected
by the mobility of substrate region. We therefore use the
p3(NA? n, = ' n/N.4 (6) lower limit of mobility estimated by the expression of
where c is a parameter to fit the experimental data in the Caughey and Thomas.
vicinity of threshold voltage [7] and we use the value 2.0. p4 is the mobility due to lattice scattering and surface
1116 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN, VOL. 11, NO. 9, SEPTEMBER 1992
roughness scattering. As with previous mobility models
[ 113-[ 131, we express those dependencies as a function of
normal electric field. Hence the p4 is written as
P4(En) = po/[(l + + (E,,/E2)P21.
The parameter p l is the slope of the experimental data
[7], i.e., 0.28, where E, is less than 0.5 MV/cm. Other
parameters p 2 , El and E2 are determined so as to fit the
whole region of experimental data [7] and are obtained as
2.9, 6.3 x lo3 into V/cm and 7.7 x lo5 V/cm, respec-
tively. The expression can fit into the experimental results
well, [7], even at high normal electric field as shown in
Fig. 2. In our model we assume that its local normal field
dependence is the same as the effective normal field de-
pendence of the mobility that has been experimentally ob-
tained. Although there has been an approach to derive the
local normal field dependence from experimentally mea-
sured effective normal field dependence [5], it can be ap-
plied only to the inversion layer because of its assumption
that the derivative of the electric field parallel to the in-
terface can be negligible from two-dimensional Poisson’s
equation. There is a discrepancy between experimental
data and calculation results due to this simplification of
our assumption. However, for our calculation results it is
slight. It is shown in the next section of this paper, so we
carry out this simplification in our model.
We consider some limiting cases of our model. At
source or drain high concentration region, typical values
are Nd = lo2’ ~ m - n~ =, N,, NA = lOI7 cmP3, En = 0.
In that case, the contribution of acceptor scattering is neg-
ligible. As a result p1is reduced to
PI = Pmin + (PO - pm,n)/[l + (ND/NI)*’I. (8)
This is the Caughey and Thomas expression [ 161 .’For the
case of inversion layer, ( N , I 1015 ~ m - N~~ , = 1017
cmP3) the contribution of donor scattering is negligible.
So pl becomes
PI = ~ o / [ ( l + En/EJpl + + C N , ~ / ~ I .(9)
When inversion becomes stronger, the term due to accep-
tor scattering can be omitted and p1 depends only on E,
and shows universal curve.
111. RESULTSAND DISCUSSION
Following the same procedure explained in the pro-
ceeding section, we calculated the effective mobility pefl
using our own model. Fig. 3 shows the calculation results
for various substrate impurity concentrations. The exper-
imental data of Takagi et al. [7] are included for compar-
ison. As can be seen in the figure, the universal relation-
ship can be predicted by using our-mobility model, and
good agreement exists between the calculation results and
experimental data over all the range of substrate impurity
concentrations.
To compare the substrate impurity concentration de-
pendence on MOSFET characteristics of the simulation
results and that of the experimental results, we fabricated
- PRESENT MODEL
0 TAKAGI’SDATA
(7)
I
NA (cm”)
ld f
I
ld
8
2.4~10’~
lo’
4 5 6 7
10 10 10 10
EFFECTIVE NORMAL FIELD [V/cm)
Fig. 3 . Effective mobility versus effective normal field estimated accord-
ing to ( 1 ) from the results of the device simulation using our mobility
model.
some MOSFET’s. We prepared long channel MOSFET’s
( L = 100 pm) with flat sub5trate impurity concentration
and thin gate of oxide 100 A thickness. The Vg-Zd char-
acteristics are shown in Fig. 4, and the simulation results
with our mobility model are also shown. The calculation
results show good agreement with the experimental re-
Sults throughout all the range of substrate impurity con-
centrations, except for higher gate voltage and higher
concentration. The slight deviations are due to simplifi-
cation to match the local electric field dependence to the
effective normal field dependence. Fig. 5 shows the cal-
culation results with Yamaguchi’s model. The results
show strong substrate impurity concentration dependence
on the characteristics, and these results differ from the
experimental data. Fig. 6 depicts three plottings of the
drain current as a function of gate voltage of the MOS-
FET’s with substrate impurity concentrations of 4.0 X
2.4 x 1017, and 1.6 x lo’* ~ m - One ~ . plotting is
given by our own model. Another plotting is based on the
modification of our model in which the normal field de-
pendence is reduced to only p1 slope dependence. The
third plotting gives the experimental results. The current-
voltage characteristics calculated by our model are in good
agreement with the experimental data, while the drain
current calculated by the modified mobility increases
steeply at high gate voltage. So we must consider the
strong dependence of E,, for thin gate oxide MOSFET’s.
We also fabricated MOSFET’s with various channel
doses and doping energies. The devices have 1 pm chan-
nel length and 10 pm channel yidth. The gate oxides were
grown to a thickness of 100 A in wet oxygen at 820°C.
The channel doses are 1 x 10l2 and 2 x 10l2 cmV2at
channel dose energy of 10 keV and 3 x 10l2, 5 x 10l2,
and 7 X 10l2 cm-2 at 50 keV. After the channel dosing,
low temperature annealing (700°C, 480 min) was per-
formed. Typical channel doping profiles are given in Fig.
 1117
SHIRAHATA et ai.: A MOBILITY MODEL IN MOS INVERSION LAYER

110 -6 I lo18 t
-
-
- DOSE
5 - - PRESENT MODEL - DOSE SOkeV, 3x1 O’2cm-2
0 EXPERIMENT - 10keV. l ~ l O ’ ~ c m - ~ -
/ \

-a
Y
io” /
/ \

I-
Z
W
a
CT
\ I

i
3
0
z
a
a
n
10”
0 1 2 3 4 5 6 0 0.05 0.1 0.15 0.2 0.25

GATE VOLTAGE ( V I
DEPTH ( d n )
Fig. 4. Drain current versus gate voltage at a drain voltage of 0.1 V for
various substrate impurity concentrations using our mobility model. Fig. 7 . Channel profiles of the devices for two types of doping energy.
Solid line is 10 keV, 1 x lo-* cm-’ and dashed line is 50 keV, 3 X 10”
cm-2.
110 -6 1

-
-
0
YAMAGUCHrS MODEL
EXPERIMENT
0
NA (mal
4.0~10’~
0.3 r
0 3.6~10’~

-a O O

2.4~10~~ 0.25
U

I- 6.1~10”
I WkeV

Z
W
a
a 1.&I 0”
3
0
z
a
a \
n
--Ec PRESENT MODEL
0.051 ---&--. YAMAGUCHI’S MODEL
0 1 2 3 4 5 6 -*-- EXPERIMENT

GATE VOLTAGE ( V I 0 I I I I I I ~

Fig. 5. Drain current versus gate voltage at a drain voltage of 0.1 V for 0 1 2 3 4 5 6 7 8
various substrate impurity concentrations using Yamaguchi’s mobility
model.
DOSE (cm-* 1 (10’2 1
Fig. 8. Transconductance g,n as a function of the channel dose. Experi-
mental data, calculation results with using our mobility model, and results

1L - PRESENT MODEL with using Yamaguchi’s mobility model are given.

CONSTANT En DEPENDENT MODEL
0 EXPERIMENT /

-a
U = I
7. At the surface, the impurity concentration made by the
channel dose energy of 10 keV is about 10 times higher
I- than that made by the energy of 50 keV. Fig. 8 depicts
z
W the transconductance g, as a function of doping level. The
a calculation results with our mobility model, those with
a
3 Yamaguchi’s model, and the experimental data are given
0
in Fig. 8. The results calculated by our model show rea-
2a sonable agreement with the experimental data for both
dose energies. The results by Yamaguchi’s model are
n
underestimated for the MOSFET’s with high impurity
0 1 2 3 4 5 concentration made by the channel dose energy of 10 keV
GATE VOLTAGE ( V )
and overestimated for the MOSFET’s with low impurity
concentration made by the channel dose energy of 50 keV.
Fig. 6 . Drain current versus gate voltage at a drain voltage of 0.1 V for
various substrate impurity concentrations using constant En dependent mo-
Hence it is impossible to fit the calculation results with
bility model. experimental data for both dose energies.
 1118 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN, VOL. 1 1 , NO. 9, SEPTEMBER 1992

IV. CONCLUSIONS
A new mobility model has been proposed for MOS-
FET’s with thin gate oxides and high impurity concentra-
tions. It‘is not only applicable to the whole region of a
‘ _..
__ .. MOSFET but also takes into account the screening effect
in the inversion layer.
The calculation results given by our model show good
agreement with the experimental data over the whole
range of substrate concentrations. There is also good
agreement between the calculation results and experimen-
tal data even at high normal electric field where the mo-
bility is reduced due to surface roughness scattering.
ACKNOWLEDGMENT
The authors are very thankful to K. Taniguchi for val-
uable discussions and K. Nakajima for his helpful advice.
empirically related to doping and field,” Proc. IEEE, vol. 52, pp.
2192-2193, 1967.
1171 G. Baccarani and P. Ostoja, “Electron mobility empirically related
to the phosphorous concentration in silicon,” Solid-state Electronics,
vol. 18, pp. 579-580, 1975.
[ 181 B. K. Ridley, Quantum Processes in Semiconductors. Oxford, U.K.:
Clarendon, 1988.
Masayoshi Shirahata was bom in Osaka, Japan,
in 1963. He received the B.S. and M.S. degrees
in electronic engineering from Osaka University,
Osaka, Japan, in 1985 and 1987, respectively.
He joined the LSI Laboratory, Mitsubishi Elec-
tric Corporation, Hyogo, Japan, in 1987, and has
been engaged in the numerical modeling of semi-
conductor devices.
Mr. Shirahata is a member of the Japan Society
of Applied Physics.

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Aug. 1989. tem science, from Kyushu University, Fukuoka,
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2136, Apr. 1980. tric Corporation in 1982, where he worked on the
[I51 D. B. M. Klaassen, “A unified mobility model for device simula- research of SO1 and 3-D devices. Since 1988, he
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 SHIRAHATA et a l . : A MOBILITY MODEL IN MOS INVERSION LAYER
Yoichi Akasaka (SM'88) was bom in Osaka, Ja-
pan, in 1943. He received the B.S., M.S., and
Ph D. degrees in electronics from Osaka Univer-
sity in 1965, 1967, and 1972, respectively
In 1970, he joined Mitsubishi Electric Corpo-
ration, where he worked on ion implantation tech-
nology for semiconductors. He IS currently a de-
partment manager of advanced devlce technologies
where he is responsible for the development of de-
6 vice structures of DRAM, SRAM, process, de-
vice, and circuit simulations, and advanced CVD,
MeV implant, and rapid thermal processing
He led a project on laboratory automation which received the 19th Isi-
1119
kawa Award in 1987. He also managed the development of Raman mi-
crospectroscopy equipment, which received 100 R&D Awards in Chicago
in 1988. Under the management of the Future Electron Device Association,
directed by MITI, he has been investigating SO1 and 3-D IC's for ten years
In April 1990, he received an award from the Minister of Science of Japan
for his efforts in 3-D IC development He has authored or coauthored about
100 technical papers and has served on various committees for technical
meetings, including IEDM, the Symposium on VLSI Technology, and the
Conference on Solid State Devices and Matenals. He was a Visiting Pro-
fessor at Osaka University in 1988, where he has been a lecturer of LSI
technology since 1985
Dr Akasaka is a member of the Japan Society of Applied Physlcs