Preliminary

D W
DAWIN Electronics
TM
Dec. 2008 DM2G150SH6N
High Power Lugged Type IGBT Module
Description
DAWIN’S IGBT 7DM-2 Package devices are optim ized to reduce losses
Equivalent Circuit and Package
and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
6
total losses. 7

① ② ③
Features
5
☞ High Speed Switching
4
☞ BVCES = 600V
☞ Low Conduction Loss : VCE(sat) = 2.1V (typ.)
☞ Fast & Soft Anti-Parallel FWD Package : 7DM-2 Series
☞ Short circuit rated : Min. 10uS at TC=100℃
☞ Reduced EMI and RFI
☞ Isolation Type Package

Applications
Motor Drives, High Power Inverters, Welding Machine, Induction Heating,
UPS , CVCF, Robotics , Servo Controls, High Speed SMPS
Please see the package out line information
Absolute Maximum Ratings @ Tj=25℃(Per Leg)
Symbol Parameter Conditions Ratings Unit

VCES Collector-Emitter Voltage - 600 V

VGES Gate-Emitter Voltage - ±20 V
IC Collector Current Tc = 25℃ 175 A
Tc =80℃ 150 A
ICM (1) Pulsed Collector Current - 300 A
IF Diode Continuous Forward Current Tc = 100℃ 150 A
IFM Diode Maximum Forward Current - 300 A
TSC Short Circuit Withstand Time Tc = 100℃ 10 uS
PD Maximum Power Dissipation Tc = 25℃ 595 W
Tj Operating Junction Temperature - -40 ~ 150 ℃
Tstg Storage Temperature Range - -40 ~ 125 ℃
Viso Isolation Voltage AC 1 minute 2500 V
Maximum Lead Temp. for soldering -
TL 260 ℃
Purposes, 1/8” from case for 9 seconds
- 4.0 N.m
Mounting screw Torque :M6
Power terminals screw Torque :M5 2.0 N.m

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 Preliminary
D W
DAWIN Electronics
TM
Dec. 2008 DM2G150SH6N

Electrical Characteristics of IGBT @ TC=25℃ (unless otherwise specified)

Values
Symbol Parameter Conditions Unit
Min. Typ. Max.

BVCES C - E Breakdown Voltage VGE = 0V , IC = 250uA 600 - - V

ΔBVCES/ Temperature Coeff. of VGE = 0V , IC = 1.0mA - 0.6 - V/℃

ΔTJ Breakdown Voltage

VGE(th) G - E threshold voltage IC =150mA , VCE = VGE 5.0 6.5 8.5 V

ICES Collector cutoff Current VGE = VGES, VCE = 0V - - 250 uA

IGES G - E leakage Current VGE = VGES, VCE = 0V - - ±100 nA

VCE(sat) Collector to Emitter IC=150A, VGE=15V @TC= 25℃ - 2.1 2.9 V

saturation voltage IC=150A, VGE=15V @TC=100℃ - 2.4 - V

td(on) Turn on delay tim e VCC = 300V , IC =150A - 100 - nS

tr Turn on rise time VGE = ±15V - 80 - nS

td(off) Turn off delay tim e RG = 2Ω - 135 - nS

tf Turn off fall time Inductive Load, @TC = 25℃ - 140 250 nS

Eon Turn on Switching Loss - 2.5 - mJ

Eoff Turn off Switching Loss - 4.9 - mJ

Ets Total Switching Loss - 7.4 - mJ

Tsc Short Circuit Withstand Time VCC = 300V, VGE = ±15V 10 - - uS

@TC = 100℃

Qg Total Gate Charge VCC = 300V - 460 - nC

Qge Gate-Emitter Charge VGE =± 15V - 130 - nC

Qgc Gate-Collector Charge IC = 150A - 190 - nC

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 Preliminary
D W
DAWIN Electronics
TM
Dec. 2008 DM2G150SH6N

Electrical Characteristics of FRD @ TC=25℃ (unless otherwise specified)

Values
Symbol Parameter Conditions Unit
Min. Typ. Max.

VFM Diode Forward Voltage IF=150A Tc =25℃ - 1.6 2.1

V
Tc =100℃ - 1.7 -

trr Diode Reverse IF=150A, VR=300V Tc =25℃ - 120 140

nS
Recovery Tim e di/dt= -200A/uS Tc =100℃ - 140 -

Irr Diode Peak Reverse Tc =25℃ - 30 45

A
Recovery Current Tc =100℃ - 47 -

Qrr Diode Reverse Tc =25℃ - 2400 3150

nC
Recovery Charge Tc =100℃ - 3290 -

Thermal Characteristics and Weight

Values
Symbol Parameter Conditions Unit
Min. Typ. Max.

RθJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.21 ℃/W

RθJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.48 ℃/W

RθCS Case-to-Sink ( Conductive grease applied) 0.045 - - ℃/W

Weight Weight of Module - - 250 g

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 Preliminary
D
DAWIN Electronics
W TM
Dec. 2008 DM2G150SH6N

Performance Curves
300
300
Common Emitter 15V Common Emitter
Tc= 25℃ 12V Tc= 125℃
250 15V

Collector Current, IC [A]

250
20V 12V
Collector Current, IC [A]

20V

200 200

150
V GE= 10V
150

100 V GE= 10V 100

50
50

0
0
0 1 2 3 4 5 6 7 8
0 1 2 3 4 5 6 7 8

Collector – Emitter Voltage, VCE [V] Collector – Emitter Voltage, VCE [V]
Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics

300 200

180
250
160
Collector Current, IC [A]

T C=25℃
Load Current [A]

140
200
120
T C=125℃
150 100

80
100
60

40
50 Duty cycle = 50%
20 TC=125℃
Power Dissipation = 160W
0 0
0 1 2 3 4 5 6 7 8 0.1 1 10 100 1000

Collector – Emitter Voltage, VCE [V] Frequency [KHz]

Fig 3. Typical Saturation Voltage Fig 4. Load Current vs. Frequency
characteristics
20 20
Common Emitter Common Emitter
18 18 TC=125℃
TC=25℃
Collector – Emitter Voltage, VCE [V]
Collector – Emitter Voltage, VCE [V]

16 16

14 14

12 12

10 10

8 8

6 6
150A 200A 150A 200A
4 4
IC=100A IC=100A
2 2
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate – Emitter Voltage, VGE [V] Gate – Emitter Voltage, VGE [V]

Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE

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 Preliminary
D
DAWIN Electronics
W TM
Dec. 2008 DM2G150SH6N

15 1
Common Emitter
Gate-Emitter Voltage ,VGE [V]

RL = 2Ω

Thermal Response Zthjc [℃/W]

TC = 25℃
12

0.1
9 Vcc=300V

6
0.01

3 IGBT :
DIODE :
TC=25℃
0 0.001
0 100 200 300 400 500 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Gate Charge, Qg [nc] Rectangular Pulse Duration [sec]

Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance

1000 1200

1100

1000
Collector Current, IC [A]

900
Collector Current, IC [A]

100 800

700

600

500

10 400

Single Non-repetitive 300

Pulse T j≤125℃ 200

VGE = 15V 100
RG = 2Ω
1 0
0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700

Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Fig 9. RBSOA Characteristic Fig 10. SCSOA Characteristic

1000 210
Ic MAX. (Pulsed) TJ ≤ 150℃
Ic MAX. (Continuous)
50us
180 VGE ≥15V
Collector Current, IC [A]

100us
Collector Current ,Ic [ A ]

100
1ms 150

120
10
DC Operation
90
Single Non-repetitive
1 Pulse Tc = 25℃ 60
Curves must be derated
linerarly with increase 30
In temperature
0.1 0
0.1 1 10 100 1000
0 20 40 60 80 100 120 140 160

Collector-Emitter Voltage, VCE [V] Case Temperature, Tc [ ℃ ]

Fig11. SOA characteristics Fig 12. rated Current vs. Case Temperature

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 Preliminary
D
DAWIN Electronics
W TM
Dec. 2008 DM2G150SH6N

300
600
TJ ≤ 150℃
VGE ≥15V
Power Dissipation ,PD [ W ]

250

Forward Current, IF [A]

500
T C=25℃
200
400
T C=125℃
150
300

100
200

50
100

0
0
0 20 40 60 80 100 120 140 160
0 1 2 3 4

Case Temperature, Tc [ ℃ ] Forward Drop Voltage, VF [V]

Fig 13. Power Dissipation vs. Case Temperature Fig 14. Forward characteristics

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 Preliminary
D W
DAWIN Electronics
TM
Dec. 2008 DM2G150SH6N

Package Out Line Information

7DM-2

94±0.5

80±0.5
Dimensions in mm

23±0.5 23±0.5
M5 DP 9

Φ6.4±0.2

2 3
6 7

4 ±0.3
48±0.5
13 ±0.3

5 4

4±0.3

1
11 ±0.5

6.0±0.5 17.0±0.5 6.0±0.5

1.0±0.5

48.0±0.5
14.0±0.5 14.0±0.5 14.0±0.5 19.0±0.5
9.1±0.5

MAX 31

6.8±0.5
21.7±0.5

22.0+2.0
-0.6

LABEL PLATE

91.5±0.5 45.5±0.5

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