Electronics-II

Lec. Mian Hammad Nazir

Department of Electrical Engineering
CIIT Islamabad

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 Course Contents
BJT & FET Small Signal Equivalent Circuit Models, Differential
Amplifiers, BJT Differential Amplifier, MOS Differential Amplifier,
Multistage Amplifiers, The 741 Op-Amp Circuits, Analysis of the 741
Op-Amp, Gain and Frequency Response of 741, 741 as an Inverting and
Non-inverting Amplifier, Applications of 741, General Structure of
Feedback Amplifiers and Feedback Topologies, Feedback Stability Study
and Compensation Techniques Using Negative Feedback, s-Domain
Analysis, Poles, Zeros, Bode Plots, Transfer Function, Low Pass, Band
Pass & High Pass Filters, First & Second Order Filters, Power
Amplifiers, Class A Power Amplifier, Class B Power Amplifier, Class AB
Power Amplifier, Class C Power Amplifier, Oscillators Circuits & Tuned
Amplifiers, Oscillator Characteristics, LC and Crystal Oscillators, 555
Timer IC, VCO, PLL, Series, Shunt & Switching Regulators, IC
Regulators.

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 Course Book

“Electronic devices and Circuit Theory”

Robert L. Boylestad
Louis Nashelsky
7th to 9th Edition.

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BJT (Bi-Polar Junction Transistors)

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Mian Hammad Nazir
Electronics II
 Phases of development of BJT
Year of Technology Device Invented Picture

1904 Vacuum tube diode

1906 Vacuum tube triode

1930 Vacuum tube Tetrode

1930 Vacuum tube Pentode

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Year of Technology Device Invented Picture

December 23, 1947 Conventional first time built

Transistor

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 Transistor construction

Each of the three Silicon regions has one terminal electrode connected to it,
and thus the npn BJT is a three terminal device.
The three terminals are named:
1. Collector
2. Base
3. Emitter

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 Transistor construction
 PNP Transistor

 NPN Transistor

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 Transistor construction
 The pnp transistor is drawn without the base-to-collector
bias.

 What happens to the BEJ and CBJ depletion regions?

Heavily Lightly
doped doped

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 Transistor Operation
 When BEJ is forward biased and CBJ is reverse biased

 Applying Kirchhoff’s current law to the transistor, we get

ICO, like Is for a reverse-biased
diode, is temperature sensitive

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Electronics II
 Common-base Configuration
 PNP Common-base Configuration

PNP

Pointing iN

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 NPN Common-base Configuration

NPN

Not Pointing iN

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 Modes of operation of BJT’s

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 Behavior study of Common-base BJT
To fully describe the behavior of a three-terminal device such as the
common base amplifiers requires two sets of characteristics.

 Output parameter side

 Driving point or input parameters

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Out put Parameters
 The output set will relate an output current (IC) to an output
voltage (VCB) for various levels of input current (IE)

I E=

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 The output or collector set of characteristics has three basic regions of
interest,
 Active
 Cut-off
 Saturation
Active Region.
 At the lower end of the active region the emitter current (IE) is zero,
the collector current is simply that due to the reverse saturation
current ICO.
 The current ICO is so small (μ Amp) in magnitude such that IC= 0.
 The notation most frequently used for ICO on data and specification
sheets is, as indicated, ICBO.

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 Cutt-off.
 As inferred by its name, the cutoff region is defined as that
region where the collector current is 0 A.

Saturation Region.
 The saturation region is defined as that region of the
characteristics to the left of VCB = 0V.
 The exponential increase in collector current as the
voltage VCB increases toward 0V.
 In saturation region the BJT acts as closed switch which
allows all the current to pass and Voltage across the BJT is
very low.

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Input parameters
The input set for the common-base amplifier will relate an
input current (IE) to an input voltage (VBE) for various levels of
output voltage (VCB).

BJT enters in the ON

state (Saturation mode).

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 The input characteristics reveal that
 For fixed values of collector voltage (VCB ), as the VBE increases,
the IE increases in a manner that closely resembles the diode
characteristics.

 In fact, increasing levels of VCB have such a small effect on the

characteristics that as a first approximation the change due to
changes in VCB can be ignored.

 once a transistor is in the “on” state, the base-to-emitter

voltage will be assumed to be as,

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Approximation Response Curves
Effect of variations due to VCB and the
slope of the input characteristics will be ignored

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 “
Robert Green Ingersoll

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 α
α For DC Simulations :
 In the dc mode the levels of IC and IE due to the majority carriers
are related by a quantity called alpha α.

 Even though the characteristics would suggest that

α=1
for practical devices the level of alpha typically extends from
0.90 to 0.998.

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 Since alpha is defined solely for the majority carriers, we may
write,

When I E =0 m Amp , then IC=ICBO

α For AC Simulations :

defined as,
“Relatively small change in collector current IC is divided by
the corresponding change in IE with the collector-to-base
voltageVCB held constant”
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TRANSISTOR AMPLIFYING ACTION
 The relationship between IC and IE using basic amplifying action of
the transistor can be introduced on a surface level using the
network.

 The a.c input resistance is quite small and typically varies from 10
to 100 Ohm.
 The output resistance is quite high and typically varies from 50 k
to 1 M

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 The variation in resistance is due to the forward-biased
junction at the input (base to emitter) and the reverse-biased
junction at the output (base to collector).
Using a common value of 20 Ω for the input resistance.

The voltage amplification is

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Voltage Amplification.
Typical values of voltage amplification for the common-base
configuration vary from 50 to 300.

Current Amplication.
The current amplification (IC/IE) is always less than 1 for the
common- base configuration. This latter characteristic should
be obvious since IC = α IE and α is always less than 1.

The basic amplifying action was produced by transferring

a current I from a low to a high-resistance circuit.

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COMMON-EMITTER CONFIGURATION

 Current relations developed for Common base are

applicable. i.e,
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Electronics II
IE = IC + IB and IC = α IE.
Output characteristics of Common
Emitter
 The output characteristics are a plot of the output current
(IC) versus output voltage (VCE) for a range of values of input
current(IB)

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Electronics II
On the collector characteristics curve ,in cut-off Region
IC ≠ 0 m Amp when IB = 0 Amp. Why ?

when IB=0

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Input characteristics of Common
Emitter
 The input characteristics are a plot of the input current (IB)
versus the input voltage (VBE) for a range of values of output voltage
(VCE).

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Electronics II
 β
β for dc Simulations.
 In the dc mode the levels of IC and IB are related by a quantity
called beta and defined by the following equation.

 For practical devices the level of β typically ranges from

about 50 to over 400, with most in the midrange.

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 β for A.C Simulations.
For ac situations an ac beta has been defined as follows,

On specification sheets βac is normally referred to as

β ac = hfe
Where,
hfe  lower case (h) denotes Hybrid equivalent circuit
fe denotes forward current gain in Common emitter config.

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Calculation of βac and βdc

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β ac Calculations.

βdc Calucations.

Thus, β ac ≃ β dc
Generally, the smaller the level of ICEO, the
closer the magnitude of the two betas.
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Electronics II
What about βac and βdc when ICEO = 0 A. ?

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Calculating the βac at the Q-point indicated will result in

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Relationship between α and β

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Mian Hammad Nazir Electronics II
COMMON-COLLECTOR Configuration

 The output characteristics of the common-collector configuration are the

same as for the common-emitter configuration
 The input current, therefore, is the same for both the common-emitter and
common collector characteristics
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 Summary
 BJT’s
 Common Base Configuration
Output Characteristic curves
Input Characteristic curves
DC current gain factor α
 Common Emitter Configuration
Output Characteristic curves
Input Characteristic curves
DC current gain factor β
 Relation between α and β
 Common collector Configuration

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