Beruflich Dokumente
Kultur Dokumente
function
By
Gokaran Shukla
History of Spin based Devices
Shinji Yuasa
Working principle of TMR based MTJ
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TMR stand for tunnelling magneto-resistance (TMR)
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Amorphous barrier
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Crystalline barrier
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Formation of Fe/MgO/Fe junction require 12 stack of different materials
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Various expensive lithographic process
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We need alternative insulator which can be grown easily on fcc (111) face and perform similar as MgO.
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Define effective device Green's function
using left and right electrodes self energy.
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Discretize Schrödinger equation and calculate
total wave-function in left electrode, device
region and right electrode.
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Write total current that flow from left
electrode into device region using full
discretize wave-function.
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Define transmission using left electrode
coupling, advanced Green's function of device
, right electrode electronic coupling and
retard Green's function of device.
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Then final total current equation look like
Landuer-Buttiker current equation .
Junction formation and transport set-up
Junction formation and transport set-up
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Junction should be commensurable at interface (lattice
parameter should be matched from both side)
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Suitable atom from device region should face the lead
atom.( e.g Fe-O in Fe/MgO/Fe junction)
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Suitable atom will be decide by Gibbs formation
energy rule. (FeO/Fe2O3 has higher formation energy
than any binary compound form by Fe-Mg)
Junction formation and transport set-up
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Define Left and Right leads Green's function (also known as Surface
Green's function)
Junction formation and transport set-up
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Define Left lead and Device region, right lead and device region
coupling Green's functions
Junction formation and transport set-up
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Define self energy of the left and the right leads.
Junction formation and transport set-up
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Define effective device region Green's function .
Junction formation and transport set-up
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Define relation between Self-energy, Σ, and electronic
coupling matrix, Г
Junction formation and transport set-up
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Define Transmission matrix in term of coupling matrix and
effective device Green's function
Junction formation and transport set-up
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Define total net current from left electrode into device
region
Fe/HfO2/Fe
● Crystal structure: Bcc-Fe, cubic-HfO2
● Fe/HfO2 interfaces are commensurable.
● 11% tensile strain in HfO2. LDA band-gap of HfO2 with different lattice parameter suggest that HfO2
still maintain its bulk electronic properties.
● At interface, Fe atom facing Oxygen atom from HfO2. This is decided after considering Gibbs
formation energy of FeO/Fe2O3 versus binary compound formed between Fe and Hf.
2D kx-ky Bloch wave-function amplitude decay plot
and complex band analysis of HfO2
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Value in color contour plot varies linearly from 1.33 (green) to 2.74 Å-1 (red).
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HfO2 support transmission mainly at Γ point. At Γ point HfO2 filter Δ1 symmetry of
Bloch state.
Band structure of bcc-Fe
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Zero-biasTMR
analysis of
Fe/HFO2/Fe junction
suggest that junction
has around
~3500%TMR around
Fermi-level.
Conclusion for Fe/HfO2/Fe based MTJ
● 2D kx-ky amplitude of Bloch wave function decay
plot suggest that HfO2 support transmission mainly
at Γ point in 2D Brillouin zones.
● Complex band analysis suggest that HfO 2 filter Δ1
symmetry of Bloch state at Γ point.
● Bcc-Fe supply Δ1 symmetry of Bloch state at Γ
point along the transport direction [100].
● We found TMR around ~3500% in Fe/HfO2/Fe
based MTJ around Zero-Bias Fermi-level.
Thank you for your kind attention !
Non-equilibrium Green's function transport
Non-equilibrium Green's function transport
Non-equilibrium Green's function transport
Non-equilibrium Green's function transport
Non-equilibrium Green's function transport