I.D. No.

____________
BAHRA UNIVERSITY, WAKNAGHAT
Test – I, RRA/IMPROVEMENT, September 2017
Basic Electric and Electronics Engineering (ME 210)
(B. Tech. ME) (3rd Semester/ 2nd Year)
Max. Marks: 40 Time: 90 min.
______________________________________________________________________________
PART I (1×5 = 5 Marks)
Q1.
i. What is meant by charge?
ii. What is meant by Current?
iii. State Krichoff’s current Law.
iv. Distinguish between a Branch and a node of a circuit.
v. Define line currents and phase currents?

PART II (20 Marks)

Q2. In the circuit given below calculate VO and IO when VS = 1V.
I. Find VO and IO when VS = 10V.
II. What are VO and IO when each of the 1-Ω resistors is replaced by a 10-Ω and VS =
10V?10

Q3. Given the circuit in the Fig. below, obtain the Norton equivalent as viewed from
terminals: 10
(i). a – b
(ii).c – d

PART III (15 Marks)

Q4. Find the Thevenin equivalent looking into terminals a-b of the circuit in the fig. given
below.
 I.D. No.____________
BAHRA UNIVERSITY, WAKNAGHAT
Test – II, October 2016
Electronic Devices and Circuits (EC 2106)
(B. Tech. ECE) (3rd Semester/ 2nd Year)
Max. Marks: 40 Time: 90 min.
______________________________________________________________________________
PART I (1×5 = 5 Marks)
Q1
(i). Why FET is called as voltage operated device?
(ii). Two zener diodes connected ______ can be used as a.c. regulator.
a. in parallel with each other b. in series with load c. back-to-back d. in series with input voltage
(iii). When designing a voltage divider circuit, the divider resistors:
a. should carry approximately equal current b. should carry current that are 10 times the base current c.
determine the base voltage as the drop across R2 d. all of above
(iv). Why transistor cannot be replaced by back to back diode connection?
(v). Shockley’s equation defines __________ of the FET and are unaffected by network in which device is
deployed
a. VGS characteristics b. drain characteristics c. input output characteristics d. transfer characteristics

SECTION – II (2x10=20 MARKS)

Q2. What do you understand by JFET? With neat diagram of N-channel JFET explain its transfer
characteristics.
Q3. For the circuit given below β = 100 find out IC and VCE.

SECTION III (1x15=15 MARKS)

Q4. (i). For the circuit given below the value of IC = 2mA and β = 100, find the value of VCE and IE
(ii). (a) Describe in your own words why IG is effectively zero amperes for a JFET transistor.
(b) Why is the input impedance to a JFET so high?
(c) Why is the terminology field effect appropriate for this important three-terminal device?
 I.D. No.____________
BAHRA UNIVERSITY, WAKNAGHAT
Test – II, October 2016
Electronic Devices and Circuits (EC 2106)
(B. Tech. ECE) (3rd Semester/ 2nd Year)
Max. Marks: 40 Time: 90 min.
______________________________________________________________________________
PART I (1×5 = 5 Marks)
Q1
(i). FET has very high input impedance. True/False
(ii). Two zener diodes connected ______ can be used as a.c. regulator.
a. in parallel with each other b. in series with load c. back-to-back d. in series with input voltage
(iii). When designing a voltage divider circuit, the divider resistors:
a. should carry approximately equal current b. should carry current that are 10 times the base current c.
determine the base voltage as the drop across R2 d. all of above
(iv). Two zener diodes connected ______ can be used as a.c. regulator.
a. in parallel with each other b. in series with load c. back-to-back d. in series with input voltage
(v). Why transistor cannot be replaced by back to back diode connection?

SECTION – II (2x10=20 MARKS)

Q2. Derive an expression Explain the collector to base biasing circuit of an npn transistor.
Q3. What do you understand by JFET? Derive the expression for Shockley’s Equation.

SECTION III (1x15=15 MARKS)

Q4. (i). For the circuit given below find out VB, VC, VE, IB, IC, VCE, VBE. Assume β = 100.

(ii). For the given circuit find out IB, IC, VCE, and IE.