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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 FDS9926A
July 2003

FDS9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description Features

These N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V
Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 43 mΩ @ VGS = 2.5 V.
process. It has been optimized for power management
applications with a wide range of gate drive voltage
• Optimized for use in battery protection circuits
(2.5V – 10V).

Applications • Low gate charge

• Battery protection
• Load switch
• Power management

5 4

6 Q1 3

7 2
Q2
8 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±10
ID Drain Current – Continuous (Note 1a) 6.5 A
– Pulsed 20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS9926A FDS9926A 13’’ 12mm 2500 units

2003 Fairchild Semiconductor Corp. FDS9926A Rev E (W)

 FDS9926A
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C 14 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA
IGSS Gate–Body Leakage VGS = ±8 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 1 1.5 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C
–3 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 4.5 V, ID = 6.5 A 25 30 mΩ
On–Resistance VGS = 2.5 V, ID = 5.4 A 35 43
VGS = 4.5 V, ID =6.5A, TJ=125°C 35 50
ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 15 A
gFS Forward Transconductance VDS = 5 V, ID = 6.5 A 22 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, V GS = 0 V, 650 pF
Coss Output Capacitance f = 1.0 MHz 150 pF
Crss Reverse Transfer Capacitance 85 pF
RG Gate Resistance V GS = 15 mV, f = 1.0 MHz 1.4 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = 10 V, ID = 1 A, 8 16 ns
tr Turn–On Rise Time VGS = 4.5 V, RGEN = 6 Ω 9 17 ns
td(off) Turn–Off Delay Time 15 26 ns
tf Turn–Off Fall Time 4 9 ns
Qg Total Gate Charge VDS = 10 V, ID = 3 A, 6.2 9 nC
Qgs Gate–Source Charge VGS = 4.5 V 1.2 nC
Qgd Gate–Drain Charge 1.7 nC

Drain–Source Diode Characteristics and Maximum Ratings

VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.3 V
trr Diode Reverse Recovery Time IF = 6.5 A, diF/dt = 100 A/µs 15 nS
Qrr Diode Reverse Recovery Charge 5 nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°/W when b) 125°/W when c) 135°/W when mounted on a

mounted on a 0.5in2 mounted on a 0.02 minimum pad.
pad of 2 oz copper in2 pad of 2 oz
copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS9926A Rev E (W)

 FDS9926A
Typical Characteristics

20 2.4
VGS = 4.5V 2.5V VGS = 2.0V
2.2

DRAIN-SOURCE ON-RESISTANCE
16
2
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
3.5 3.0V
12 1.8

1.6

8 2.5V
2.0V 1.4
3.0V
1.2
4 3.5V
4.0V
1 4.5V

0 0.8
0 0.5 1 1.5 2 0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.11
ID = 6.5A
ID = 3.25A
DRAIN-SOURCE ON-RESISTANCE

VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)

1.4 0.09
RDS(ON), NORMALIZED

1.2 0.07

o
TA = 125 C
1 0.05

0.8 0.03
TA = 25oC

0.6 0.01
-50 -25 0 25 50 75 100 125 150 1 2 3 4 5
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

20 100
o VGS = 0V
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)

TA = -55 C
o
125 C 10
15 o
ID, DRAIN CURRENT (A)

TA = 125 C
1
25oC 25oC
10 0.1
o
-55 C
0.01

5
0.001

0.0001
0 0 0.2 0.4 0.6 0.8 1 1.2
1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9926A Rev E (W)

 FDS9926A
Typical Characteristics

5 1000
VDS = 5V 15V f = 1 MHz
ID = 3 A
VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)

4 800
10V

CAPACITANCE (pF)
3 600
Ciss

2 400

Coss
1 200

Crss
0 0
0 1 2 3 4 5 6 7 8 0 5 10 15 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
RθJA = 135°C/W
RDS(ON) LIMIT 100µs 40 TA = 25°C
ID, DRAIN CURRENT (A)

10 1ms
10ms
100ms
1s 30
1 10s
DC
20
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 135oC/W
10
TA = 25oC

0.01
0.01 0.1 1 10 100 0
VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100
t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
RθJA(t) = r(t) * RθJA
0.2 o
THERMAL RESISTANCE

RθJA = 135 C/W

0.1
0.1
0.05 P(pk)
0.02 t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS9926A Rev E (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ LittleFET™ Power247™ SuperSOT™-6
ActiveArray™ FAST MICROCOUPLER™ PowerTrench SuperSOT™-8
Bottomless™ FASTr™ MicroFET™ QFET SyncFET™
CoolFET™ FRFET™ MicroPak™ QS™ TinyLogic
CROSSVOLT™ GlobalOptoisolator™ MICROWIRE™ QT Optoelectronics™ TINYOPTO™
DOME™ GTO™ MSX™ Quiet Series™ TruTranslation™
EcoSPARK™ HiSeC™ MSXPro™ RapidConfigure™ UHC™
E2CMOSTM I2C™ OCX™ RapidConnect™ UltraFET
EnSigna TM
ImpliedDisconnect™ OCXPro™ SILENT SWITCHER VCX™
FACT™ ISOPLANAR™ OPTOLOGIC SMART START™
Across the board. Around the world.™ OPTOPLANAR™ SPM™
The Power Franchise™ PACMAN™ Stealth™
Programmable Active Droop™ POP™ SuperSOT™-3
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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