BJT Circuit Analysis

and MOS Basics

EEE 41 DC 14
Formulas
𝑁𝐷 2𝜀𝑠 𝑁𝐷
𝑥𝑝 = 𝑁 𝑊= 𝑉𝑏𝑖 − 𝑉𝐴
𝐴 +𝑁𝐷 𝑞 𝑁𝐴 𝑁𝐴 +𝑁𝐷
𝑁𝐴 2𝜀𝑠 𝑁𝐴
𝑥𝑛 = 𝑊= 𝑉𝑏𝑖 − 𝑉𝐴
𝑁𝐴 +𝑁𝐷 𝑞 𝑁𝐷 𝑁𝐴 +𝑁𝐷

1
𝛽𝐷𝐶 = 𝑛2 2
𝑖𝐸 𝐷𝐸 𝑁𝐵 𝑊 +1 𝑊
𝑛2 𝐷 𝑁 𝐿
𝑖𝐵 𝐵 𝐸 𝐸
2 𝐿𝐵

𝑄𝐵 𝑄𝐵 𝜏𝐵
𝑖𝑏 ≈ 𝑖𝑐 ≈ 𝛽𝐷𝐶 ≈
𝜏𝐵 𝜏𝑡 𝜏𝑡
𝑊2 𝑞𝐴𝑊Δ𝑝𝐵 𝑥=0
𝜏𝑡 ≡ 𝑄𝐵 ≈
2𝐷𝐵 2
BJT Analysis
Consider a Si PNP BJT with long emitter and collector
regions and the following parameters. If the BJT is to
be biased under the given voltages. Assume a
constant cross-sectional area throughout the BJT of
10−7 𝑐𝑚2 .
Emitter Base Collector
𝑁𝐸 = 1018 𝑐𝑚−3 𝑁𝐵 = 1016 𝑐𝑚−3 𝑁𝐶 = 1014 𝑐𝑚−3
𝜇𝐸 = 260 𝑐𝑚2 /𝑉𝑠 𝜇𝐵 = 437 𝑐𝑚2 /𝑉𝑠 𝜇𝐶 = 1358 𝑐𝑚2 /𝑉𝑠
𝜏𝐸 = 1𝜇𝑠 𝜏𝐵 = 5𝜇𝑠 𝜏𝐶 = 6𝜇𝑠
𝑊𝐸 → ∞ 𝑊𝐵 = 10−4 𝑐𝑚 𝑊𝐶 → ∞
BJT Analysis
Case 𝑽𝑬𝑩 𝑽𝑬𝑪
1 0.6𝑉 2𝑉
2 0.6𝑉 3𝑉
3 0.7𝑉 2.1𝑉
4 0.7𝑉 3.1𝑉

1. Determine the quasi neutral region width of the base for

each case shown.
2. Determine the 𝛽 for each case.
3. Determine 𝑄𝐵 for the first case.
4. Determine the base transit time for the first case.
BJT Analysis
Case 𝑽𝑬𝑩 𝑽𝑬𝑪 𝑽𝑪𝑩
1 0.6𝑉 2𝑉 −1.4𝑉
2 0.6𝑉 3𝑉 −2.4𝑉
3 0.7𝑉 2.1𝑉 −1.4𝑉
4 0.7𝑉 3.1𝑉 −2.4𝑉

𝑉𝐶𝐵 is needed in the computation. By KVL across the PNP: 𝑉𝐸𝐶 + 𝑉𝐶𝐵 − 𝑉𝐸𝐵 = 0
Therefore, 𝑉𝐶𝐵 = 𝑉𝐸𝐵 − 𝑉𝐸𝐶

The base side depletion region widths are computed for each case of 𝑉𝐸𝐶 and 𝑉𝐶𝐵 .
𝑘𝑇 𝑁𝐸 𝑁𝐵 10181016
𝑉𝑏𝑖 𝐸𝐵 = ln = 0.026𝑉 ⋅ ln = 0.8381𝑉
𝑞 𝑛2𝑖 1020
𝑘𝑇 𝑁𝐶 𝑁𝐵 10141016
𝑉𝑏𝑖 𝐶𝐵 = ln 2 = 0.026𝑉 ⋅ ln 20 = 0.5987𝑉
𝑞 𝑛𝑖 10
BJT Analysis Computing for each case:

𝑽𝑬𝑩 𝒙𝒏(𝑬𝑩)

2𝜀𝑠 𝑁𝐸 0.6V 1.7168 × 10−5 𝑐𝑚

𝑥𝑛 𝐸𝐵 = 𝑉𝑏𝑖 𝐸𝐵 − 𝑉𝐸𝐵 0.7V 1.3075 × 10−5 𝑐𝑚
𝑞 𝑁𝐵 𝑁𝐸 + 𝑁𝐵

2𝜀𝑠 𝑁𝐶 𝑽𝑪𝑩 𝒙𝒏(𝑪𝑩)

𝑥𝑛 𝐶𝐵 = 𝑉𝑏𝑖 𝐶𝐵 − 𝑉𝐶𝐵 4.9735 × 10−6 𝑐𝑚
𝑞 𝑁𝐵 𝑁𝐶 + 𝑁𝐵 -1.4V
-2.4V 6.0920 × 10−6 𝑐𝑚

Case with 𝑉𝐸𝐵 = 0.6𝑉, 𝑉𝐶𝐵 = −1.4𝑉:

2 10−12 1018
𝑥𝑛 𝐸𝐵 = 0.8381 − 0.6 = 1.7168 × 10−5𝑐𝑚
1.6 × 10−19 1016 1018 + 1016

2 10−12 1014
𝑥𝑛 𝐶𝐵 = 0.5987 − −1.4 = 4.9735 × 10−6𝑐𝑚
1.6 × 10−19 1016 1014 + 1016
 BJT Analysis
Using the values for 𝑥𝑛 𝐸𝐵 and 𝑥𝑛 𝐶𝐵 with 𝑽𝑬𝑩 𝒙𝒏(𝑬𝑩)
𝑊 = 𝑊𝐵 − 𝑥𝑛 𝐸𝐵 − 𝑥𝑛 𝐶𝐵 0.6V 1.7168 × 10−5 𝑐𝑚
0.7V 1.3075 × 10−5 𝑐𝑚
Case 1 (in cm):
𝑊 = 10−4 − 1.7168 × 1015 − 4.9735 × 10−6 𝑽𝑪𝑩 𝒙𝒏(𝑪𝑩)
-1.4V 4.9735 × 10−6 𝑐𝑚
Case 2 (in cm):
-2.4V 6.0920 × 10−6 𝑐𝑚
𝑊 = 10−4 − 1.7168 × 1015 − 6.0920 × 10−6

and so on.
Case 𝑽𝑬𝑩 𝑽𝑬𝑪 𝑽𝑪𝑩 𝑾
1 0.6𝑉 2𝑉 −1.4𝑉 7.7859 × 10−5 𝑐𝑚
2 0.6𝑉 3𝑉 −2.4𝑉 7.6740 × 10−5 𝑐𝑚
3 0.7𝑉 2.1𝑉 −1.4𝑉 8.1951 × 10−5 𝑐𝑚
4 0.7𝑉 3.1𝑉 −2.4𝑉 8.0833 × 10−5 𝑐𝑚
 BJT Analysis
𝛽 for each case can be solved using the value for 𝑊
1
𝛽= 2
𝑛𝑖𝐸 𝐷𝐸 𝑁𝐵 𝑊 1 𝑊 2
+
𝑛2𝑖𝐵 𝐷𝐵 𝑁𝐸 𝐿𝐸 2 𝐿𝐵

Case 1: 𝐷𝐸 𝜇𝐸
Note: =
𝐷𝐵 𝜇𝐵
𝐿𝐵 = 0.026 × 437 5 × 10−6 = 7.537 × 10−3𝑠
𝐿𝐸 = 0.026 × 260 1 × 10−6 = 2.6 × 10−3𝑠
1
𝛽= 2 = 4320
1020 260 1016 7.7859 × 10−5 1 7.7859 × 10−5
+2
1020 437 1018 2.6 × 10−3 7.537 × 10−3
Case 𝑽𝑬𝑩 𝑽𝑬𝑪 𝑽𝑪𝑩 𝑾 𝜷
1 0.6𝑉 2𝑉 −1.4𝑉 7.7859 × 10−5 𝑐𝑚 4320
2 0.6𝑉 3𝑉 −2.4𝑉 7.6740 × 10−5 𝑐𝑚 4400
3 0.7𝑉 2.1𝑉 −1.4𝑉 8.1951 × 10−5 𝑐𝑚 4050
4 0.7𝑉 3.1𝑉 −2.4𝑉 8.0833 × 10−5 𝑐𝑚 4120
BJT Circuit Analysis
Use the following values for the circuit:
𝑉1 = 1.5𝑉
𝑉2 = 5𝑉
𝑅𝐵 = 10𝑘Ω
𝑅𝐶 = 500Ω

Use the following values for the BJT:

𝑉𝐵𝐸,𝑂𝑁 = 0.7
𝑉𝐶𝐸,𝑆𝐴𝑇 = 0.2𝑉
𝛽 = 150

1. Determine the region of operation of the BJT.

2. Determine 𝑉𝑂𝑈𝑇 .
3. Draw the small-signal model of the BJT.
BJT Circuit Analysis
Assuming that the BJT is in the forward-active mode…
By KVL at the lower loop:
−𝑉1 + 𝐼𝐵𝑅𝐵 − 𝑉𝐵𝐸,𝑂𝑁 = 0𝑉
−1.5𝑉 + 𝐼𝐵 ⋅ 10𝑘Ω + 0.7𝑉 = 0𝑉 𝑉2 𝑅𝐶
𝑅𝐵
1.5𝑉−0.7𝑉
𝐼𝐵 = = 80𝜇𝐴 𝑉𝑂𝑈𝑇
10𝑘Ω

By KVL at the outer loop: 𝑉1 𝑉𝐵𝐸,𝑂𝑁 𝛽𝐼𝐵

−𝑉1 − 𝑉2 + 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 = 0𝑉
−1.5𝑉 − 5𝑉 + 500𝐼𝐵 + 𝑉𝐶𝐸 = 0𝑉
𝑉𝐶𝐸 = 0.5𝑉

Since 𝐼𝐵 > 0 and 𝑉𝐶𝐸 > 𝑉𝐶𝐸,𝑆𝐴𝑇, then the BJT is indeed forward-active.
And since 𝑉𝐶𝐸 = 𝑉𝑂𝑈𝑇, then 𝑉𝑂𝑈𝑇 = 0.5𝑉
 MOS Capacitors (Electrostatics)

MOS-C convention: x=0 at O-S interface ΦM = ΦS case (ideal case)

Body is at ground.

EF(metal) – EF(semiconductor bulk) = -qVG

MOS Capacitors (Electrostatics)

ΦM ≠ ΦS case
(General case)
MOS-C EBD
Given the EBD of a MOS
capacitor above where the
middle region is SiO2 and the
right-most region is Si. The device
is at room temperature and
steady-state. 𝐸𝑖 is at 𝐸𝐹𝑆 at the
surface. 𝜒𝑆𝑖 = 4.05𝑒𝑉 and
𝜒𝑆𝑖𝑂2 = 0.95𝑒𝑉

1. What is the gate voltage applied?

2. Draw 𝐸0 on the EBD.
3. What is the hole concentration at the flat band region of the
semiconductor?
4. What is the hole concentration at the Si-SiO2 interface?
MOS-C EBD 𝐸0

1
1. 𝑉𝐺 = 𝐸𝐹𝑆 − 𝐸𝐹𝑀 = 0.6V
𝑞
2. See 𝐸0 on drawing.
3. at the flat band region, 𝐸𝑖 − 𝐸𝐹 = 0.3𝑒𝑉
𝑝 = 𝑛𝑖 𝑒 𝐸𝑖 −𝐸𝐹 /𝑘𝑇 = 1010 𝑐𝑚−3 ⋅ 𝑒 0.3𝑉/0.026𝑉 ≈ 1015 𝑐𝑚−3
𝑛2𝑖 1020 𝑐𝑚−3
𝑛= = ≈ 1015 𝑐𝑚−3
𝑝 1015 𝑐𝑚−3
4. at the surface, 𝐸𝐹 − 𝐸𝑖 = 0.3𝑒𝑉
𝑛 = 𝑛𝑖 𝑒 𝐸𝐹 −𝐸𝑖 /𝑘𝑇 = 1010 𝑐𝑚−3 ⋅ 𝑒 0.3/0.026 ≈ 105 𝑐𝑚−3
𝑛2𝑖 1020𝑐𝑚−3
𝑝= = ≈ 1015 𝑐𝑚−3
𝑛 105𝑐𝑚−3