RAJALAKSHMI INSTITUTE OF TECHNOLOGY

Kuthambakkam, Chennai – 602 107

LESSON PLAN

Faculty Name : P.SATHISH BABU Section : --

ELECTRIC CIRCUITS AND

Subject Name : Code : EC2151
ELECTRON DEVICES

Year : I Semester : II

Degree & Branch : B.E. – CSE

AIM
To impart basic knowledge on circuit analysis techniques, Resonance in RLC circuits, semiconductor
devices, transistors and special semiconductor devices.

OBJECTIVES

i. To expose the students on the analysis of D.C. and A.C. Circuits using various
theorems.

ii. To understand the concept of steady state & transient response of RLC circuits.

iii. To introduce the working principle and operation of semiconductor devices and
study their characteristics.

iv. To study the operation and characteristics of different types of transistors.

v. To introduce the basics of special semiconductor devices and to study their

applications.

TEXT BOOKS
1. Joseph A. Edminister, Mahmood, Nahri, “Electric Circuits” – Shaum series,Tata McGraw
Hill, (2001)
2. S. Salivahanan, N. Suresh kumar and A. Vallavanraj, “Electronic Devices and Circuits”,Tata
nd
McGraw Hill, 2 Edition, (2008).
3. David A.Bell,“Electronic Devices & Circuits”,Oxford University Press, 5th Edition, (2008).

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REFERENCE BOOKS
1. Robert T. Paynter, “Introducing Electronics Devices and Circuits”, Pearson Education, 7
th

Education, (2006).
2. William H. Hayt, J.V. Jack, E. Kemmebly and steven M. Durbin, “Engineering Circuit
th
Analysis”,Tata McGraw Hill, 6 Edition, 2002.
3. J. Millman & Halkins, Satyebranta Jit, “Electronic Devices & Circuits”,Tata McGraw Hill,
nd
2 Edition, 2008.

SUGGESTED BOOKS

1. U.A. Bakshi, A.P. Godse, “Electric circuits and Electron devices”, Technical
Publications,Pune.
2. Sudhakar & Shyammohan, “Circuit and Network Analysis”,Tata Mc Graw Hill, New
Delhi, 2005.
3. Arumugam and Prem Kumar, “Electric Circuit Theory”, Khanna Publishers, 2002;

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 S. T/R/S Book
Date Period Unit Topic(s) Page(s)
No. Book No.
1 I Introduction to Electrical circuits S 1 1.1

2 I Ohm’s Law, Kirchoff’s current S 1 1.8,1.63

and voltage laws
3 I Problems on KCL,KVL S 1 1.65

4 I Series connection of independent S 1 1.12

sources – R, L and C
5 I Parallel connection of S 1 1.16
independent R, L and C
6 I Mesh analysis S 1 1.70
7 I Nodal analysis S 1 1.75
8 I Thevenin’s theorem S 1 2.6
9 I Superposition theorem S 1 2.1
10 I Norton’s theorem S 1 2.13

11 I Maximum power transfer S 1 2.18

theorem
12 I Duality S 1 2.23
13 I Star – Delta conversion S 1 1.54
14 I Delta – Star conversion S 1 1.52

15 II Introduction to Transient S 1 3.1

analysis
16 II Laplace Transform, Inverse S 1 3.2
Laplace transform
17 II Phasor relationship for R,L,C S 1 1.36
II 3.8,3.14.
18 DC response of RL, RC and S 1
RLC circuits 3.19
II 3.9,3.15.
19 Problems on DC response of RL, S 1
RC and RLC circuits 3.20

20 II RL, RC and RLC circuit S 1 3.27

responses to pulse inputs
21 II RLC circuit response to S 1 3.27
sinusoidal inputs
II Problems on RLC circuit
22 response to sinusoidal & pulse S 1 3.44
inputs
23 II frequency response S 1 3.36
24 II Series resonance S 1 4.3
25 II Parallel resonance S 1 4.21

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 S. T/R/S Book
Date Period Unit Topic(s) Page(s)
No. Book No.

26 II Single tuned circuit. S 1 4.56

27 II Double tuned circuits S 1 4.59

28 III Introduction T 2 67

29 III Review of intrinsic & extrinsic T 2 67

semiconductors
30 III Theory of PN junction diode T 2 92
31 III Energy band structure T 2 98
32 III space charge capacitances T 2 107
33 III diffusion capacitances T 2 107

34 III effect of temperature and T 2 111

breakdown mechanism
35 III Zener diode Principle&working T 2 123

36 III Zener diode and its T 2 123

characteristics
37 IV Principle & operation of PNP T 2 149
and NPN transistors
38 IV study of CE, configurations and T 2 157
their characteristics
39 IV study of CB configurations and T 2 155
their characteristics
40 IV study of CC configurations and T 2 160
their characteristics
41 IV Breakdown in transistors T 2 171

42 IV operation and comparison of N- T 2 197

Channel and P-Channel JFET
43 IV drain current equation T 2 202
44 IV MOSFET T 2 206

45 IV Enhancement and depletion T 2 206,207

types
46 IV structure and operation S 1 7.24

47 IV comparison of BJT with S 1 7.30

MOSFET
48 IV Thermal effect on MOSFET S 1 7.32
49 V Tunnel diodes, PIN diode T 2 136, 144
50 V Varactor diode, Laser T 2 125,146
51 V SCR characteristics T 2 227
52 V Two transistor equivalent model T 2 228

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 S. T/R/S Book
Date Period Unit Topic(s) Page(s)
No. Book No.
53 V UJT T 2 584
54 V Diac and Triac T 2 237,235
55 V CCD T 2 220
56 V Photodiode S 1 8.66
57 V Phototransistor S 1 8.71
58 V Photoconductive T 2 777
59 V Photovoltaic cells T 2 782
60 V LED, LCD T 2 787,789

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