APM4500

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features Pin Description

• N-Channel S1 1 8 D1

20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V G1 2 7 D1

RDS(ON)=30mΩ(typ.) @ VGS=2.5V S2 3 6 D2

• P-Channel G2 4 5 D2

-20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V

SO-8
RDS(ON)=105mΩ(typ.) @ VGS=-2.5V
• Super High Dense Cell Design for Extremely Low
D1 D1 S2
RDS(ON)
• Reliable and Rugged
• SO-8 Package
G2
G1

Applications
S1 D2 D2

• Power Management in Notebook Computer , N-Channel MOSFET P-Channel MOSFET

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

APM4500
Package Code
K : SO-8
Handling Code
Operation Junction Temp. Range
Temp. Range C : -55 to 150°C
Handling Code
Package Code TR : Tape & Reel

APM4500 K : APM4500
XXXXX XXXXX - Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.2 - May., 2003
APM4500

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter N-Channel P-Channel Unit

VDSS Drain-Source Voltage 20 -20
V
VGSS Gate-Source Voltage ±12 ±12
ID* Maximum Drain Current – Continuous 8 -4.3
A
IDM Maximum Drain Current – Pulsed 35 -17
TA=25°C 2.5 2.5
PD Maximum Power Dissipation W
TA=100°C 1.0 1.0
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθjA Thermal Resistance – Junction to Ambient 62.5 °C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM4500
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
N-Ch 20
Drain-Source Breakdown
BVDSS VGS=0V , IDS=250µA V
Voltage P-Ch -20
VDS=16V , VGS=0V N-Ch 1
Zero Gate Voltage Drain
IDSS µA
Current VDS=-16V , VGS=0V P-Ch -1
VDS=VGS , IDS=250µA N-Ch 0.5 0.7 1
VGS(th) Gate Threshold Voltage V
VDS=VGS , IDS=-250µA P-Ch -0.45 -1
VGS=±12V , VDS=0V N-Ch ±100
IGSS Gate Leakage Current nA
VGS=±12V , VDS=0V P-Ch ±100
VGS=4.5V , IDS=8A 22 26
N-Ch
Drain-Source On-state VGS=2.5V , IDS=5.2A 30 36
RDS(ON)a mΩ
Resistance VGS=-4.5V , IDS=-4.3A 80 90
P-Ch
VGS=-2.5V , IDS=-2A 105 115
ISD=1.7A , VGS=0V N-Ch 0.8 1.3
VSDa Diode Forward Voltage V
ISD=-1.25A , VGS=0V P-Ch -0.7 -1.3
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

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Rev. A.2 - May., 2003
APM4500

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM4500
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Dynamicb
N-Channel N-Ch 10 13
Qg Total Gate Charge
VDS=10V , IDS= 8A P-Ch 9 12
VGS=4.5V N-Ch 3
Qgs Gate-Source Charge nC
P-Channel P-Ch 3
VDS=-10V , IDS=-3A N-Ch 2.5
Qgd Gate-Drain Charge
VGS=-4.5V P-Ch 1
N-Channel N-Ch 16 32
td(ON) Turn-on Delay Time
VDD=10V , IDS=1A , P-Ch 13 21.5
VGEN =4.5V , RG=0.2Ω N-Ch 40 75
Tr Turn-on Rise Time
P-Ch 36 56
ns
P-Channel N-Ch 42 78
td(OFF) Turn-off Delay Time
VDD=-10V , IDS=-1A , P-Ch 45 69.5
VGEN =-4.5V , RG=6Ω N-Ch 20 35
Tf Turn-off Fall Time
P-Ch 37 57.5
N-Ch 675
Ciss Input Capacitance
P-Ch 510
VGS=0V
N-Ch 178
Coss Output Capacitance VDS=15V pF
P-Ch 270
Frequency=1.0MHz
N-Ch 105
Crss Reverse Transfer Capacitance
P-Ch 120

Notes
b
: Guaranteed by design, not subject to production testing

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Rev. A.2 - May., 2003
APM4500

Typical Characteristics

N-Channel MOSFET

Output Characteristics Transfer Characteristics

20 20
VGS=3,4,5,6,7,8,9,10V
VGS=2.5V
16 16

ID-Drain Current (A)

ID-Drain Current (A)

12 12

8 VGS=2V 8
TJ=125°C

4 TJ=-55°C
4 TJ=25°C
VGS=1.5V

0 0
0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.06
IDS=250µA
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)

1.25 0.05

1.00 0.04
(Normalized)

VGS=2.5V
0.75 0.03
VGS=4.5V
0.50 0.02

0.25 0.01

0.00 0.00
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10

Tj - Junction Temperature (°C) ID - Drain Current (A)

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Rev. A.2 - May., 2003
APM4500

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.10 2.00
ID=8A VGS=4.5V
0.09 1.75 ID=8A

RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)

0.08
1.50
0.07

(Normalized)
0.06 1.25

0.05 1.00
0.04 0.75
0.03
0.50
0.02
0.25
0.01
0.00 0.00
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

10 1000
VDS=10V Frequency=1MHz
ID=1A
VGS-Gate-Source Voltage (V)

8 800
Ciss
Capacitance (pF)

6 600

4 400

Coss
2 200

Crss
0 0
0 4 8 12 16 20 0 4 8 12 16 20
QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V)

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Rev. A.2 - May., 2003
APM4500

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage Single Pulse Power

20 60

10
48
IS-Source Current (A)

Power (W)
36

1 TJ=150°C TJ=25°C
24

12

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 100
VSD -Source-to-Drain Voltage (V) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

2
Normalized Effective Transient

1 Duty Cycle = 0.5

Thermal Impedance

D= 0.2

D= 0.1

D= 0.05
0.1

D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=62.5°C/W
3.T JM -T A =P DM Z thJA
SINGLE PULSE 4.Surface Mounted

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Square Wave Pulse Duration (sec)

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Rev. A.2 - May., 2003
APM4500

Typical Characteristics

P-Channel MOSFET

Output Characteristics Transfer Characteristics

10 10
-VGS=3,4.5,6,7,8V

8 -VGS=2V 8

-ID-Drain Current (A)

-ID-Drain Current (A)

6 6

4 4
-VGS=1.5V TJ=25°C

TJ=125°C TJ=-55°C
2 2

-VGS=1V
0 0
0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5
-VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.16
-IDS=250µA
-VGS(th)-Threshold Voltage (V)

0.14
1.25
RDS(ON)-On-Resistance (Ω)

0.12
1.00 -VGS=2.5V
(Normalized)

0.10
0.75 -VGS=4.5V
0.08
0.50
0.06

0.25 0.04

0.00 0.02
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10

Tj - Junction Temperature (°C) -ID - Drain Current (A)

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Rev. A.2 - May., 2003
APM4500

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.20 2.0
-ID=4.3A -VGS=4.5V
0.18 1.8 -ID=4.3A

RDS(ON)-On-Resistance (Ω)
RDS(ON)-On-Resistance (Ω)

1.6
0.16
1.4

(Normalized)
0.14
1.2
0.12
1.0
0.10
0.8
0.08
0.6
0.06 0.4

0.04 0.2
1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150

-VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

5 800
-VDS=10V Frequency=1MHz
-ID=3A
-VGS-Gate-Source Voltage (V)

700
4
600
Capacitance (pF)

Ciss
3
500

400
2

300 Coss

1
200
Crss
0 100
0 2 4 6 8 10 0 5 10 15 20
QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.2 - May., 2003
APM4500

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage Single Pulse Power

10 14

12
-IS-Source Current (A)

10

Power (W)
8

TJ=150°C TJ=25°C 6

1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100
-VSD -Source-to-Drain Voltage (V) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient

1
Duty Cycle=0.5
Thermal Impedance

D=0.2

D=0.1

0.1
D=0.05

D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R thJA=62.5°C/W
3.T JM-T A=P DMZ thJA
D=0.01 SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Square Wave Pulse Duration (sec)

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Rev. A.2 - May., 2003
APM4500

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

0.015X45
E H

e1 e2

A1
A 1

L
0.004max.

Mi ll im et er s Inche s
Dim
Min . Max . Min. Max .
A 1. 35 1. 75 0. 053 0. 069
A1 0. 10 0. 25 0. 004 0. 010
D 4. 80 5. 00 0. 189 0. 197
E 3. 80 4. 00 0. 150 0. 157
H 5. 80 6. 20 0. 228 0. 244
L 0. 40 1. 27 0. 016 0. 050
e1 0. 33 0. 51 0. 013 0. 020
e2 1. 27B S C 0. 50B S C
φ 1 8° 8°

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Rev. A.2 - May., 2003
APM4500

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999
temperature

Peak temperature

183°C
Pre-heat temperature

Time
Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 11 www.anpec.com.tw

Rev. A.2 - May., 2003
APM4500

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

Po P D
E
P1

F Bo
W

Ao D1 Ko

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ± 1 62 +1.5 12.75+ 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
0.15
SOP- 8 F D D1 Po P1 Ao Bo Ko t
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

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Rev. A.2 - May., 2003
APM4500

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8 12 9.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 13 www.anpec.com.tw

Rev. A.2 - May., 2003