MDP13N50B / MDF13N50B N-channel MOSFET 500V

MDP13N50B / MDF13N50B
N-Channel MOSFET 500V, 13.0 A, 0.5Ω

General Description Features

The MDP/F13N50B uses advanced Magnachip’s
VDS = 500V
MOSFET Technology, which provides low on-state
ID = 13.0A @VGS = 10V
resistance, high switching performance and
RDS(ON) ≤ 0.5Ω @VGS = 10V
excellent quality.

MDP/F13N50B is suitable device for SMPS, HID

and general purpose applications. Applications

Power Supply

PFC

Ballast

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol MDP13N50B MDF13N50B Unit
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 13 13* A
Continuous Drain Current o
ID
TC=100 C 8.2 8.2* A
(1)
Pulsed Drain Current IDM 52 52* A
o
TC=25 C 187 41 W
Power Dissipation o
PD o
Derate above 25 C 1.49 0.33 W/ C
(1)
Repetitive Avalanche Energy EAR 18.7 mJ
(3)
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns
(4)
Single Pulse Avalanche Energy EAS 580 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
※ Id limited by maximum junction temperature

Thermal Characteristics
Characteristics Symbol MDP13N50B MDF13N50B Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 0.67 3.05

Dec 2011. Version 1.0 1 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDP13N50BTH -55~150 C TO-220 Tube Halogen Free
o
MDF13N50BTH -55~150 C TO-220F Tube Halogen Free

Electrical Characteristics (Ta = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 6.5A - 0.39 0.5 Ω
Forward Transconductance gfs VDS = 40V, ID = 6.5A - 13 - S
Dynamic Characteristics
Total Gate Charge Qg - 27 -
(3)
Gate-Source Charge Qgs VDS = 400V,ID = 13.0A,VGS = 10V - 6.3 - nC
Gate-Drain Charge Qgd - 8.6 -
Input Capacitance Ciss - 1459 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 7.4 - pF
Output Capacitance Coss - 174 -
Turn-On Delay Time td(on) - 21 -
Rise Time tr VGS = 10V, VDS = 250V, ID = 13.0A, - 47 -
(3) ns
Turn-Off Delay Time td(off) RG = 25Ω - 131 -
Fall Time tf - 54 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
IS - 13 - A
Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 13.0A, VGS = 0V - - 1.4 V
Body Diode Reverse Recovery Time trr (3)
- 325 - ns
IF = 13.0A, dl/dt = 100A/µs
Body Diode Reverse Recovery Charge Qrr - 2.9 - µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤13.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C
4. L=6.2mH, IAS=13.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C

Dec 2011. Version 1.0 2 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
35 1.00
Vgs=5.0V
Notes
30 =5.5V
1. 250µs Pulse Test
=6.0V
2. TC=25℃
=7.0V
=8.0V
25 =10.0V
I D ,D ra in C u rre n t [A ]

=15.0V 0.75

R D S (O N ) [Ω ]
20

15 VGS=10V
VGS=20V
0.50
10

0 0.25
0 5 10 15 20 25 5 10 15 20 25 30

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :
1. VGS = 10 V
Drain-Source Breakdown Voltage 1. VGS = 0 V
2.5 2. ID = 5.0A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

※ Notes :
1. VGS = 0 V
* Notes ;
2.250µs Pulse test
1. Vds=30V
Reverse Drain Current [A]

10 10

150℃
ID (A)

-55℃
IDR

150℃ 25℃
25℃
1 1

0.1
3 4 5 6 7 0.1
0.2 0.4 0.6 0.8 1.0 1.2
VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Dec 2011. Version 1.0 3 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
10 1400
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 13.0A Coss = Cds + Cgd
Crss = Cgd
100V 1200 Coss
8 250V
VGS, Gate-Source Voltage [V]

400V
1000 ※ Notes ;
1. VGS = 0 V

Capacitance [pF]
6 2. f = 1 MHz
800 Ciss

600
4

400
Crss

2
200

0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 1 10
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10 14

10 µs
Operation in This Area
is Limited by R DS(on)
12
100 µs
10
1 1 ms
10
ID, Drain Current [A]

ID, Drain Current [A]

10 ms

100 ms
DC 8
0
10
6

-1
4
10
Single Pulse
TJ=Max rated 2
TC=25℃

-2
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
MDP13N50B (TO-220) Temperature

0
10
24000
single Pulse
22000
RthJC = 0.67℃/W
Normalized Thermal Response

20000
TC = 25℃
D=0.5
18000
16000
Power (W)

0.2 14000
Zθ JC(t),

-1
10 12000
0.1
10000
0.05
8000
0.02 ※ Notes : 6000
Duty Factor, D=t1/t2
0.01 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 4000
RΘ JC=0.67℃/W
single pulse 2000
-2
10 0
10
-5 -4
10
-3
10
-2
10 10
-1 0
10 10
1 1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
MDP13N50B (TO-220) Dissipation – MDP13N50B (TO-220)

Dec 2011. Version 1.0 4 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
2
10 14000
10 µs
Operation in This Area single Pulse
is Limited by R DS(on) 12000 RthJC = 3.0℃/W
100 µs
1 1 ms TC = 25℃
10
10000
ID, Drain Current [A]

10 ms

100 ms

Power (W)
DC 8000
0
10
6000

4000
-1
10
Single Pulse
TJ=Max rated 2000
TC=25℃

10
-2 0
10
-1
10
0
10
1
10
2 1E-5 1E-4 1E-3 0.01 0.1 1 10

VDS, Drain-Source Voltage [V] Pulse Width (s)

Fig.13 Maximum Safe Operating Area Fig.14 Single Pulse Maximum Power
MDF13N50B (TO-220F) Dissipation – MDF13N50B (TO-220F)

0
10
Normalized Thermal Response

D=0.5

0.2
Zθ JC(t),

-1 0.1
10

0.05

0.02 ※ Notes :
Duty Factor, D=t1/t2
0.01 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.0℃/W
single pulse
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.15 Transient Thermal Response Curve

MDF13N50B (TO-220F)

Dec 2011. Version 1.0 5 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
Physical Dimensions

3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified

Dec 2011. Version 1.0 6 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
Physical Dimension

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

Symbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55

Dec 2011. Version 1.0 7 MagnaChip Semiconductor Ltd.

 MDP13N50B / MDF13N50B N-channel MOSFET 500V
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The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
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MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Dec 2011. Version 1.0 8 MagnaChip Semiconductor Ltd.