Stochastic effect on thermally magnetization reversal in Pico 

second ordering process  

W. Sadnawanto and Budi Purnama1
Physics Department of Post Graduate Program Sebelas Maret University,
Jl. Ir. SUtami 36A Kentingan Jebres Surakarta 57126, INDONESIA 

E­mail: bpurnama@mipa.uns.ac.id

Abstract.  In   this   study   a   magnetization   reversal   dynamics   observed   in   the   heat   assisted
magnetization reversal of CoPtCr perpendicularly magnetized material in the order of a pico
second ordering time.  Observation of heat assisted magnetization reversal used micromagnetic
simulation   solved   by   the   Landau­Lifshitz­Gilbert   equation.     The   magnetic   dot   size   of   the
simulation was 50 nm  50 nm  20 nm. The perpendicularly anisotropy constant CoPtCr was
2  106 erg/cc. Micro­magnetic simulations was carried out systematically by providing pulse­
external field with varying pulse duration of 25 ps to 1 ns.  The decrease of the minimum field
required   for   reversal   observed   in   this   simulation   until   it   reached   90%   for   125   ps   cooled
ordering time. The results also was showed that this sequence simulation running had a zero
probability   of   switching   at   zero   fields.     It   was   indicated   that   the   heat   stochastic   effect
dominated in the mechanism reduced of the field was required for along to the magnetic field
direction.

1. Introduction
Recently, heat assisted magnetic recording (HAMR) is believed as crucial keys to realize high density
recording.  Here, high anisotropy magnetic perpendicularly as a storage cell memory due to unlimited
down   scale   to   nano­meter   order   lateral   dimension.   Recording  mechanism   is   carried   out   by  apply
heating pulse (nano second order or less) so that temperature rise limit to Curie temperature.  When
cooling process near  room temperature, magnetic field is applied and data save at room temperature.
Several   studies   have   reported   the   final   switching   distribution   [1],   localized­heating   [2­4]   or
distribution of barrier energy [5] to explain a low magnetic field which is required to along field
direction.   Randomly magnetized state due to heating process is considered as a main factor of low
magnetic field required for switching. Our previous study show that a configuration of magnetic state
when zero field cooling defines the switching field [6].  Gilbert damping also other factor contributes
to randomly magnetized state.   This paper using micromagnetic simulation by solved the Landau­
1
  To whom any correspondence should be addressed.
 Lifshitz­Gilbert equation discusses about contribution for both stochastic thermal effect and Gilbert
damping in lowering magnetic field required for switching of HAMR.  

2. Numerical Methods 1 1
1
In this article, temporal evolution of ordering magnetic state along to magnetic field during cooling
process has been investigated. Randomly initial magnetized state is considered for all calculations
because temperature increases to near the Curie temperature TC after heating. The thermal fluctuation
0.8
0.8 0.5
effect is taken into account in the Landau-Lifshit-Gilbert (LLG) equation by using fluctuation
dissipation effect [7]. In order to calculate the probability of magnetic state along to field direction at
0.6
0.6
given magnetic writing-field amplitude, simulation was performed for 50 different series of random
MX
field. In this paper perpendicularly anisotropy magnetic0 of CoPtCr is considered as a storage cell
memory. The perpendicularly anisotropy constant K was 2  106 erg/cc and 4πMS was 3.75 kG. The 0.4
0.4
magnetic dot size was 50 nm  50 nm  20 nm. Micro-magnetic simulations were carried out
systematically by providing pulse-external field with varying pulse duration of 25 ps to 1 ns. The
second-power temperature dependence with the-0.5 reduced magnetization was assumed for both the 0.2
0.2
exchange stiffness constant, A and the perpendicular crystalline anisotropy, K [8]. The moderate TC of
432.9 K was used the whole simulation. The field cooling process start form TC and the temperature
are linearly decreased for ordering cooling-time i.e. from
-1 25 ps to 1 ns. 0
0 -1 -0.5 0 0.5 1 0 10
1 0 10002000300040005000
3. Results and Discussion MY
1
1 1
(a) (b)
(b)

MX (norm.)
0.5
MX (norm.)

0.5 0.5
MX (norm.)

0
0 0

-0.5
-0.5
-0.5

-1 -1
-1 -1 -
-1 -0.5 0 0.5 1 -1 -0.5 0 0.5 1
5 1 MY (norm.) MY (norm.)
Figure 1 trajectory of randomly magnetized state of nano magnetic particle in MY and MX component
1 1
under zero-field-ordering cooling from Curie temperature to room temperature for 500 pico
1 constant (a) α = 0.03 and (b) α = 0.3.
second duration calculated for different Gilbert damping
0.8 0.8
H = 2.6 kOe
MX (norm.)
MX (norm.)

0.6 0.6
H = 1 kOe
MX (norm.)

0.4 0.4
0.5
5 kOe 0.2 H = 0.5 kOe 0.2
 1

0.5 0.05

Comparison between two0trajectory of randomly magnetized state of nano dot magnetic under zero-
field-ordering cooling for 500 ps duration for Gilbert damping constant (a) α = 0.03 and (b) α = 0.3 as
shown in Figure 1. The mean of magnetized state in x-axis was zero. When the randomly magnetized
state is considered for lowering switching field of nano magnetic so that nano magnetic with α = 0.03 0
much easy to random -0.5than other case. However the sequence simulation showed contrary results as
discussed in the later.

-1
-1 -0.5 0 0.5 1 0 1000
1
1
H = 2.6 kOe

H = 1 kOe 0.5
MX (norm.)

0.5

MX
0
H = 0.5 kOe

-0.5
H=0
0
0 100 200 300 400 500 -1
t (ps) -1 -0.5 0 0.5
Figure 2 modification of a gradually steps ordering magnetic state MX (norm.) under a field-
MY
ordering-cooling calculated for K = 2  106 erg/cc, 4πMS was 3.75 kG and α = 0.3.

Figure 2 show modification of a gradually steps ordering magnetic state MX (norm.) under a field-
ordering-cooling. When H = 0, the magnetic nanodot tends to relax into a multi domain configuration
within result MX (norm.) = 0. In order with increasing of magnetic field H, there are not observed the
inversed ordering state MHX th HthWhenHsimulation
(norm.). th run for H = 2.6 kOe, heat assisted magnetic
1
recording (HAMR) realized domain nucleation formed50 Probability along field direction
Probability along field direction

of very fast domain wall propagation.

b) (a) (b)
0.8 40 0.
Hth (kOe)

0.6 30 0.

0.4 20 0.
d Heat Assisted
tcol = 125 ps Non-Heat Assisted
0.2 10
tcol = 250 ps 0.
tcol = 500 ps

1000 0 0
0 1 2 3 4 5 0 200 400 600 800 1000
Magnetic Field H (kOe)
t (ps)
Hth
Figure 3. Ordering probability along field direction as a functionH Hth
ofththe magnetic field H evaluated
for sequence cooling time from t = 25 ps to 1 ns (Fig 3.a),1and a minimum field required for along
tion

field direction Hth as a function of t (Fig 3.b).

t = 125 ps
 Hth
1

Probability along field direction

50
Figure 3(a) show the ordering probability as a function of the (b) (a)
magnetic field calculated for various
time ranged from 25 ps to 1 ns. When the ordering magnetic state MX (norm.) exceeds 0.85, it is
found that the inversed domain 40is completely annihilated. So that, to evaluate the ordering0.8probability
of magnetic state, the ordering state is therefore, judged if the (norm.) exceeds 0.85 or not. As shown
in Figure 3, the ordering probability gradually increases with the H and reaches to 1 at the threshold
Hth (kOe)

field Hth which corresponds to 30the minimum field which is required for thermally assisted 0.6magnetic
recording (HAMR). For zero magnetic fields, the ordering probabilities have same for all case i.e.
zero probability. It can be reasoned
20 when multi domain configuration realize. When the magnetic
field increase the domain wall spread to whole
0.4
magnetic dot within results single domain
Heat Assisted
configuration. Here various times, the ordering Non-Heat
probabilityAssisted
under zero fields cooling is independence
with the time. As shown at the10 Figure 4(b), the Hth decrease over time increase and it become
0.2 constant
at t = 500 ps. It means that the same mechanism for ordering magnetized state occurs when the time
much larger than 500 ps. Comparisons two switching field exclude thermally magnetization effect
also is depicted at the Figure 4.0The decrease of the minimum field required for reversal (Hth0) reaches
0 200 400 600 800 1000
90% for 125 ps cooled ordering time. It is indicated that thermally stochastic effect dominated 0 in the
1 2 3
lowering the Hth. t (ps) Magnetic Field
Hth Hth
1
Probability along field direction

tcol = 125 ps
0.8

0.6
α =0.03
0.4 α =0.3

0.2

0
0 10 20 30 40
Magnetic Field H (kOe)
Figure 4 Ordering probability along field direction as a function of the magnetic field H evaluated
for cooling time t = 125 ps with different damping Gilbert factor (a) α = 0.03 and (b) α = 0.3.

Figure 4 shows other expression of randomly magnetized state effect which is generated by Gilbert
factor on heat assisted magnetic recording (HAMR). As discussed at the previous paragraph that the
magnetic dot particle owing low Gilbert damping has high probability to obtain randomly magnetic
state. However it compensates by high value of the Hth too. In case α = 0.03, the field Hth of 38.5 kOe
is required to ordering magnetic state occurrences. In the contrary for α = 0.3, it is only 5.2 kOe (less
than 1/7) of magnetic field required for 50 sequence simulated successfully switching along to field
direction. The value is still in the range of practical application for recording writing technology.

4. Conclusion
In conclusion, the lowering magnetic field required for ordering along to field direction had clarified
by micro-magnetic simulation studied in this paper. Stochastic effects seem to be dominant in the
lowering mechanism of HAMR than randomly magnetized state affected by Gilbert constant. Finally
the decreased of the minimum field required for reversal (Hth) reaches 90% for 125 ps cooled ordering
time was obtained in this study.

5. References

[1] Victora RH, and Huang P-W 2013 IEEE Trans.Magn. 49 751
[2] Huang L, Stipe B, Staffaroni M, Juang J-Y, Hirano T, Schreck E, and Huang F-Y 2013 IEEE
Trans. Magn. 49 2565
[3] Kilic U, Finocchio G, Hauet T, Florez SH, Aktas G and Ozatay O 2012 Appl.Phys.Lett. 101
252407
[4] Li D, Staffaroni M, Schreck E and Stipe B 2013 IEEE Trans.Magn. 49
[5] 3576Ozatay O, Hauet T, Florez SH, Katine JA, Moser A, Thiele J-U, Folks L and Terris BD 2009
Appl.Phys.Lett. 95 172502
[6] Budi Purnama, Nozaki Y and Matsuyama K 2007 JMMM 310 2683
[7] Brown Jr WF 1963 Phys.Rev. 130 1677
[8] Mansuripur M and Connel GAN 1984 J.Appl.Phys 55 3049