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4) -It S~
H-W:ti=' I ('-; tj 'U.)
6.1 1. Active 6.6 Old technology:
2. Saturation 10- 3 = 2 x lO' J5 e VsEiVT
3. Active
4. Saturation VSE = 0.025 In ( ,.2 x10-3 )
, 15. = 0.673 V
10-
5. Active
6. Cutoff New technology:
10-3 2 x 1O-18eVllElVT
G h e EB junctions have a 4: 1 area ratio.
10-3 )
Ie = /seVBE/VT VBE = 0.025 In ( 2 x 10- 18 0.846 V
Ie = 800 ILA
3
Ix 10- ) Ie
VBE = VT In ( 1
6 x 10- 6
= 0.704 V Ii = - = 80
1/3
= 80 = 0.988
IS! AEI
6.4 - = - - =
200 x 200
250,000
Ii + I 81
IS2 A£2
Ie! ISlevYElIVT
6.9
Ie2 Is2 e VEn/ V,
0.31 V
= 0,412 V
(2)
Chapter 6-2
Subtracting Eq. (1) from Eq. (2) gives 6.14 For i8 = 10 J..LA,
6fi
a+6a
~.~-- .. -- a
.. ~
Ie iE i8 = 1000 - 10 = 990 J..LA
a 6.a a
f! = Ie := 990 = 99
i8 10
6.fi (3)
- a - 6a)(l a)
iY = ~ =0.99
For in 20 J..LA,
fJ a
For in = 50 J..LA,
613
ie 950
-6a -10%
: : :. -~- = -0.1% 13
iE 50
= 19
a 100
19
a 0.95
l'i + 1 20
fi 100
In x 0.7 V + Ie x Ve 18 10 J..LA
100
0.01 x 0.7 +3 x 10:::::. 30mW a = = --. = 0.99
li+l101
6.13 ie IsevBE/VT
5 xlO-15eO.7/0.025 = 7.2 rnA
ISE Is 6.98 X 10- 16 A
= IiIs = 6.91
.. 7.2 7.2
G (a)
8) Ie a 0.26
0.255 mA
+1.5 Y
2.7 kn
Ve 1.5 0,255 X 2.7 0.81 V
@In IE
---3>--
..L +
-=- 0.8V
CD r
IE
-O.g - (-1.5)
2,7
0.26mA
tr 2.7kn
VE =-0,8V(D
15 V
1.5 V
(b)
- 1.5 - 0.8
I E- 2
= 0.35 rnA -'-0.8Y G)
Vc -1.5 + 2 x 0.343
f7\ Ie ~ x 0,35
0' f -0.81 Y G)
\V = 0.98 x 035
0= 0.343
-1.5V
(c) +3Y
3 - 1.8 .I.
IE 10 = 0,12mA 'f
10kH
+1 V CD 1.8 Y CD
A O,8Y
..0
le/50 = 2.4 f.LA
o Ie =
=
0' X 0.12
0,98 x 0,12
=0,118mA
-'-3Y
(d)
t
Ve 3 0,147 x 8,2 1.8 V
L5Y
~
3 f.LA ---3>- +
Is
0.8V
V CD 1.5 - 0.8 = 0.7 CD
IE=~
4.7
0.7
4.7 = ° 15mA
., -=
In all circuits shown in P6,35, we assume indicated on the conesponding circuit diagrams:
active-mode operation and that this is the the order of the steps is shown by the circled
case at the end of the solution, The solutions are numbers,
Chapter 6-16
~
1.3 = 2.7 rnA ®
......---.--DVe = 2.7 X I
2.7V®
~0.7V CD
1 kO.
~5V
Figure 1
Figure 3
4mA Correspondingly,
Ve = +1.15 V
IkD.
VB = -1.5V 6.55
0.1 mA t
lkD.
-5V
VB = +1.2 V
Figure 2
~
~ +3V (c) +3V
~
V2=3-0'5X3'6
= +L2V
43 kfl -r1.2 V
JO~
-1 ",,0 OV
8
4.7kfl
I ,}IE
0.5 rnA t 4.7
-3V 0.5 rnA
(b) (d)
+3V
+3V
t~'2kD v8-
' - 0..T),O..7
-
V, 3 - 0.5 X 3.6 +0.75 V
1,45 V
= +1.2 V t'" OmA
V9 =, -3+ 0.25 x 10
VE -0.7V -O.5V
lOW
+4.7kfl .
t
! 14 = -0.7 - (-3) = 0.5 rnA
t 4.7 --3 V
-3V
Ce) +3V
1
480
0.0125 rnA
t "--~= = 0.25 rnA
-3V
Thus RE +
fl+l
Vo gmR~
where
V'ig 1 + flgmR~
R2 15
I/fl VBB Vee - - - = 15 x - - - = 5.357 V
R2 + RI 15 + 27
RB = Rl !i R2 = 151127 = 9.643 kQ
_ 0.99(5.357 -- 0.7) _ 1 8
I+(RdR 1) Ie - 9.643 - . 5 mA
Q.E.D (3)
1 + 1 + RdR 1 2.4+ 101
, gmR~
Ie 1.85 mA
74 rnA/V
The input resistance Rin can be obtained as gm = Vr = 0.025 V
follows:
100
1.35 kQ
gm 74
Substituting for i from Eq. (1) yields Replacing the BJT with its hybdd-7T model
results in the equivalent circuit shown at the
bottom of the page:
Rin 1 [ 1+ RI ] Q.E.D
gm Rj +R2 -74(39112) = -97.83
(d) Substituting numerical values:
110 = -0.371 x 97.83 -36.3 V IV
'Vsig
1 + 76.13
VB = 5 V, VBE = 0.7 V
For
= 4.3 V
f[ 05
1 + 1 x (82.41: 1000) -c:-_.--:--: ] 5
25 kQ
0.2
= 39.1 kQ
h 2
IR = - - = - ::::: 0.02 rnA
{3+1101
This figure belongs to Problem 7.125.
R sig
+
V 1T rw g",v"rr Re RL
- - 1- 1-
Chapter 7-52
= -40(6.8112.32) = -69.2 V IV
= -40(6.8112) = -61.8 V jV
Vo Va 11h2 Vbl
(f ) - = x-x -61.8 200kD
Vsig Vb2 Vbi Vsig
h = 0.1 rnA
25mV
= 250Q
0.1 rnA Figure]
Chapter 7-53
Ie 0.495 rnA
v" - v, ~,
200
200kfi
-Vsig
Q 0.1 leQ
At the output node,
Vo = -ai,(5 !I 100)
0.1 (5 i1100)
5 II 100
1J ig = a 0.1 ~ 47.6 V IV
Figure 2 s
2.3
-~~=0.78mA
1 +-.
51
VE = !eRE = 0.78 V
0.25 kQ
VB = VE +0.7 = 1.48 V
Node equation at the output:
I') 200:
Vo • ai + v" - v, _ 0
20 200 2.3
T
h = ---== = 1.54 rnA
1 •
Vo + 0.99 x 4v +~ - 2 = 0 T 201
20 ' 200 200
1 VE = hRE 1.54 V
VO (2 0+ ~O) = -V; (4 x 0.99 - 2~()) VB = VE + 0.7 2.24 V
v
o = -71.9 V/V
(b) Rill 100 Ii (fJ + 1)[re + (\ ,II)]
Vi
~Lp;I~
~Rn = 100 II [201 x (0.0162 + 0.5)] 130.4
= 0.964 x 65.2
Vh 2
50.9 kQ
62.9 A/A
• 100
Va (l111) 500
- - - e r e in Q) 100)
Vh (1 111) + re 500 + r" = 3.3 II ( 0.0463 + Wi
{) 50:
= 0.789 kQ 789 Q
Vb
21.3 = 0.68 V V
Vsig 21.3 + 10 /
7.136 Refer to the circuit in Fig. P7.136.
Va 500
0.94 V/V For dc analysis, open-circuit the two coupling
Vb 500 + 32.1
capacitors. Then replace the 9-V source and the
Va
0.68 X 0.94 0.64 V/V two 20-kQ resistors by their Th6venin equivalent,
Vsig namely, a 4.5-V source and a 10-kQ series
fJ = 200: resistance. The latter can be added to the lO-kQ
resistor that is connected to the base. The result is
50.9 the circuit shown in 1, which can be used to
-=-50--.9-+-1-0 = 0.836 V /V
Vsig calculate IE.
Vo 500
= 0.969 V /V
50O + 16 .2 +9V
+4~
Va
- = 0836 X 0,969 = 0.81 V /V
Vsig
h=
3 0.7
11£
[nn
3.3 + fJ + 1
2.3
Figure 1
3.3 + 101
25mV
4.5 - 0.7
- - - =46.3Q (a) Ie
0.54 rnA 20
2+-