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2. Uniqueness Theorem
A solution is said to be unique if it is the only one possible among a given
class of solutions. The EM field in a given region V[ S ] is unique if
- all sources are given;
- either the tangential E tan components or the tangential H tan components
are specified at the boundary S. 1
The uniqueness theorem follows from Poynting’s theorem in its integral form:
1
A more general statement of the theorem asserts that any one of the following boundary conditions at S ensure the solution’s
uniqueness: (1) E tan S , or (2) H tan S , or (3) Etan1 S and H tan1 S , or (4) Etan2 S and H tan2 S . Here, E tan = E − E ⋅ nˆ is the tangential
component of E at the surface S while Etan1 and Etan2 are its components. The same notations hold for H .
[N.K. Nikolova, “Electromagnetic boundary conditions and uniqueness revisited,” IEEE Antennas & Propagation Magazine,
vol. 46, no. 5, pp. 141–149, Oct. 2004.]
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We start with the supposition that a given EM problem has two solutions (due to
the same sources and the same boundary conditions): (Ea , H a ) and (Eb , H b ) .
The difference field is then formed:
δ=
E E a − Eb ,
(17.2)
δ=
H H a − Hb .
The difference field has no sources; thus, it satisfies the source-free form of
(17.1):
Since both fields satisfy the same boundary conditions, then δ E tan = 0 or
δ H tan = 0 over S, which makes the surface integral in (17.3) zero. This results in
jω ∫∫∫ ( µ | δ H |2 −ε | δ E |2 )dv + ∫∫∫ σ | δ E |2 dv =
0, (17.4)
VS
VS
imaginary real
3. Equivalence Principles
The equivalence principle follows from the uniqueness theorem. It allows for
the simplification of certain EM problems. As long as a problem is re-formulated
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so that it preserves the boundary conditions at S, it is going to produce the only
one possible solution for the region VS bounded by S. Such a re-formulated
problem is referred to as an equivalent problem.
(E o , H o ) (E o , H o ) (E o , H o )
VS VS VS
J se Js
(E o , H o ) ⇒ (E e , H e ) ⇒ no fields
S sources S no sources M se S no sources Ms
n̂ n̂ n̂
(a) Original problem (b) General equivalent (c) Equivalent problem
problem with zero fields
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(E o , H o ) (E o , H o ) no fields (E o , H o ) no fields (E o , H o )
VS S S S
n̂ n̂ n̂
sources no sources no sources
⇒ Ms ⇒ 2M s
Js = 0 Js = 0
(b) We can assume that the boundary S is a perfect magnetic conductor. As per
image theory, in an equivalent open problem, this eliminates the surface
magnetic currents, i.e., M s = 0 , and leaves just surface electric currents of
double strength 2J s . This approach is illustrated below.
(E o , H o ) (E o , H o ) (E o , H o ) (E o , H o )
no fields no fields
VS
S S S
n̂ n̂ n̂
sources no sources no sources
⇒ Js ⇒ 2J s
Ms = 0
Ms = 0
(c) Make no assumptions about the materials inside S, and define both J s and
M s currents, which radiate in free space (no fictitious conductors behind
them). It can be shown that these equivalent currents create zero fields
inside VS . [Ewald-Oseen extinction theorem: A. Ishimaru, Electro-
magnetic Wave Propagation, Radiation, and Scattering, Prentice Hall,
1991, p. 173]
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The first two approaches are not very accurate in the general case of a curved
boundary surface S because the image theory can be applied to curved surfaces
only if the curvature radius is large compared to the wavelength. However, in the
case of flat infinite planes (walls), the image theory holds exactly and all three
approaches should produce the same external field according to the uniqueness
theorem.
The above approaches are used to compute fields in half-space as excited by
apertures. The field behind S is assumed known and are used to define the
equivalent surface currents. The open-region far-zone solutions for the vector
potentials A (resulting from J s ) and F (resulting from M s ) are
e− jβ r
A( P) = µ
4π r ∫∫ J s (r′)e jβ rˆ ⋅r′ds′ , (17.8)
S
e− jβ r
F( P) = ε
4π r ∫∫ M s (r′)e jβ rˆ ⋅r′ds′ . (17.9)
S
Here, r̂ denotes the unit vector pointing from the origin of the coordinate system
to the point of observation P. The integration point Q is specified through the
position vector r′ . In the far zone, it is assumed that the field propagates radially
away from the antenna. It is convenient to introduce the propagation vector or
wave vector,
β = β rˆ , (17.10)
which characterizes both the phase constant and the direction of propagation of
the wave. The vector potentials can then be written as
e− jβ r
A( P) = µ
4π r ∫∫ J s (r′)e jβ⋅r′ds′ , (17.11)
S
e− jβ r
F( P) = ε
4π r ∫∫ M s (r′)e jβ⋅r′ds′ . (17.12)
S
The relations between the far-zone field vectors and the vector potentials are
E far =
A − jω ( Aθ θˆ + Aϕ φˆ ) , (17.13)
− jω ( Fθ θˆ + Fϕ φˆ ) .
H Ffar = (17.14)
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Since
E Ffar η H Ffar × rˆ ,
= (17.15)
the total far-zone electric field (due to both A and F) is found as
E far = − jω ( Aθ + η Fϕ )θˆ + ( Aϕ − η Fθ )φˆ .
E Afar + E Ffar = (17.16)
Equation (17.16) involves both vector potentials as arising from both types of
surface currents. Computations are reduced in half if image theory is used in
conjunction with an electric or magnetic wall assumption.
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e− jβ r
−ε
F( P ) = ∫∫
4π r S A
nˆ × Ea e jβ⋅r ′ds′ . (17.19)
We can work with the general vector expression for the far field E [see (17.16)]
written as
E far =− jω A − jωη F × rˆ , (17.20)
where the longitudinal Ar component is to be neglected. Substituting (17.18)
and (17.19) into (17.20) yields
e− jβ r
E far =− jβ rˆ × ∫∫ [nˆ × Ea − η rˆ × (nˆ × H a ) ] e jβ⋅r′ ds′ . (17.21)
4π r SA
This is the full vector form of the radiated field resulting from the aperture field,
and it is referred to as the vector diffraction integral (or vector Kirchhoff
integral).
We now consider a practical case of a flat aperture lying in the xy plane with
nˆ ≡ zˆ . For brevity, the radiation integrals in (17.18) and (17.19) are denoted as
I H = I xH xˆ + I yH yˆ = ∫∫ H a e jβ⋅r′ds′ , (17.22)
S
I E = I xE xˆ + I yE yˆ = ∫∫ Ea e jβ⋅r′ds′ . (17.23)
S
Then,
e− jβ r
=A µ (− I yH xˆ + I xH yˆ ) , (17.24)
4π r
e− jβ r
F= −ε (− I yE xˆ + I xE yˆ ) . (17.25)
4π r
The integrals in the above expressions can be explicitly written for the case nˆ ≡ zˆ
bearing in mind that the source-point position is = r′ x′xˆ + y′yˆ :
I xE (θ , ϕ ) = ∫∫ Eax ( x ′, y ′)e j β ( x′ sin θ cos ϕ + y′ sin θ sin ϕ ) dx ′dy ′ , (17.26)
SA
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I xH (θ , ϕ ) = ∫∫ H ax ( x ′, y ′)e j β ( x′ sin θ cos ϕ + y′ sin θ sin ϕ ) dx ′dy ′ , (17.28)
SA
Note that the above integrals can be viewed as 2-D Fourier transforms of the
aperture field components where x transforms into β x = − β sin θ cos ϕ and y
transforms into β y = − β sin θ sin ϕ .
The transverse components of the magnetic vector potential in spherical terms
are obtained from (17.24) as
e− jβ r
=Aθ µ ( − I yH ⋅ cosθ cosϕ + I xH ⋅ cosθ sin ϕ ) , (17.30)
4π r
e− jβ r H
= Aϕ µ ( I y ⋅ sin ϕ + I xH ⋅ cosϕ ) , (17.31)
4π r
which can also be written in the vector form:
e− jβ r ˆ
=A⊥ µ θ cosθ ( I xH sin ϕ − I yH cos ϕ ) + φˆ ( I xH cos ϕ + I yH sin ϕ ) . (17.32)
4π r
Analogously,
e− jβ r ˆ
F⊥ = −ε θ cosθ ( I xE sin ϕ − I yE cos ϕ ) + φˆ ( I xE cos ϕ + I yE sin ϕ ) . (17.33)
4π r
By substituting the above expressions in (17.16), we obtain the far-zone E field:
e− jβ r E
=Eθ j β I x cos ϕ + I yE sin ϕ + η cosθ ⋅ ( I yH cos ϕ − I xH sin ϕ ) , (17.34)
4π r
e− jβ r
Eϕ j β -η ( I xH cos ϕ + I yH sin ϕ ) + cosθ ⋅ ( I yE cos ϕ − I xE sin ϕ ) . (17.35)
4π r
For apertures mounted on a conducting plane (e.g., slot antennas), the
preferred equivalent model is the one using an electric wall with doubled
magnetic current density
M s =⋅ 2 (Ea × nˆ ) , (17.36)
radiating in open space. The solution, of course, is valid only for z ≥ 0 . In this
case, I H = 0 and the field is given by
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e− j β r E
= Eθ (θ , ϕ ) j β ( I x cos ϕ + I yE sin ϕ ) , (17.37)
4π r
e− j β r
= Eϕ (θ , ϕ ) j β cos θ ( I yE cos ϕ − I xE sin ϕ ) . (17.38)
4π r
For apertures illuminated from open space (e.g., reflector antennas), the dual
current formulation is used. Then, the usual assumption is that the aperture field
resembles that of a locally-plane wave, i.e.,
H a = zˆ × Ea / η . (17.39)
This implies that
1 I yE I xE
I=
H zˆ × I E or I xH = − , I yH = . (17.40)
η η η
This assumption is valid for apertures that are at least a couple of wavelengths in
extent. Then, (17.34)-(17.35) reduce to
e− j β r (1 + cos θ ) E
= Eθ (θ , ϕ ) j β ( I x cos ϕ + I yE sin ϕ ) , (17.41)
4π r 2
e− j β r (1 + cos θ ) E
= Eϕ (θ , ϕ ) j β ( I y cos ϕ − I xE sin ϕ ) . (17.42)
4π r 2
Compare (17.41)-(17.42) to (17.37)-(17.38). The terms in the brackets are
identical. If the aperture has high gain, the factors containing cosθ are not going
to affect the pattern significantly and the two sets of formulas are going to be
nearly equivalent.
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5. The Uniform Rectangular Aperture on an Infinite Ground Plane
A rectangular aperture is defined in the xy plane as shown below.
Ea
Ly
x
Lx
If the field is uniform in amplitude and phase across the aperture, it is referred to
as a uniform rectangular aperture. Let us assume that the aperture field is y-
polarized:
Lx Ly
Ea =E0 yˆ , for | x |≤ and | y |≤ ,
2 2 (17.43)
Ea = 0, elsewhere .
According to the equivalence principle, we assume an electric wall at z = 0 ,
where the equivalent magnetic current density is given by M s= ,e E0 × nˆ .
Applying image theory, we double the equivalent source radiating in open space:
M=
s 2M s=
,e 2 E0 yˆ ×=
zˆ 2 E0 xˆ . (17.44)
The only non-zero radiation integral is [see (17.27)]
Lx /2 Ly /2
=I yE (θ , ϕ ) 2 E0 ∫ e j β x′ sin θ cos ϕ dx ′ ⋅ ∫ e j β y′ sin θ sin ϕ dy ′ , (17.45)
− Lx /2 − Ly /2
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β Lx β Ly
sin sin θ cos ϕ sin sin θ sin ϕ
I yE (θ , ϕ ) 2 E0 Lx Ly 2 ⋅ 2 . (17.46)
β Lx β Ly
sin θ cos ϕ sin θ sin ϕ
2 2
To shorten the notations, let us introduce the pattern variables:
u(θ , ϕ ) = 0.5β Lx sin θ cos ϕ ,
(17.47)
v (θ , ϕ ) = 0.5β Ly sin θ sin ϕ .
The complete radiation field is found by substituting (17.46) in (17.37)-(17.38):
e− j β r sin u sin v
Eθ (θ , ϕ ) = j β E0 Lx Ly sin ϕ ,
2π r u v
(17.48)
e− j β r sin u sin v
Eϕ (θ , ϕ ) = j β E0 Lx Ly cos θ cos ϕ .
2π r u v
The total-field amplitude pattern is, therefore,
sin u sin v
| E (θ , ϕ ) |=
F (θ , ϕ ) =sin 2 ϕ + cos2 θ cos2 ϕ ⋅ =
u v
(17.49)
sin u sin v
=1 − sin 2 θ cos2 ϕ ⋅ .
u v
The principal plane patterns are:
E-plane pattern (ϕ = π / 2)
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PRINCIPLE PATTERNS FOR APERTURE OF SIZE: Lx = 3λ , Ly = 2λ
0
E-plane
H-plane 30 30
60 60
120 120
150 150
180
For electrically large apertures, the main beam is narrow and the
(1 − sin 2 θ cos 2 ϕ )1/2 in (17.49) is negligible, i.e., it is roughly equal to 1 for all
observation angles within the main beam. That is why, in the theory of large
apertures and arrays, it is assumed that the amplitude pattern is
sin u sin v
f (u , v) ≈ ⋅ , (17.52)
u v
where u = 0.5β Lx sin θ cos ϕ and v = 0.5β Ly sin θ sin ϕ .
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Below is a view of the | (sin u ) / u | function for Lx = 20λ and ϕ = 0 (H-plane
pattern):
|sin[20*pi*sin(theta)]/[20*pi*sin(theta)]|
1
0.8
0.6
0.4
0.2
0
-1 -0.5 0 0.5 1
sin(theta)
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Here is a view of the | sin v / v | function for Ly = 10λ and ϕ = 90 (E-plane
pattern):
0.8
0.6
0.4
0.2
0
-1 -0.5 0 0.5 1
sin(theta)
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Point for Discussion: The field of a narrow slot (a slit) ( Ly λ ).
y L
x
z
Ea = E0 yˆ
The radiation integral for the case of a slit is a particular case of (17.46):
sin ( 0.5β Lx sin θ cos ϕ ) sin ( 0.5β Ly sin θ sin ϕ )
( I yE )slit 2 E0 Lx Ly ⋅ lim , (17.53)
(0.5β Lx sin θ cos ϕ ) Ly →0 ( 0.5β Ly sin θ sin ϕ )
which leads to
sin ( 0.5β Lx sin θ cos ϕ )
( I yE )slit = 2E0 Lx Ly . (17.54)
(0.5β Lx sin θ cos ϕ )
The total field pattern of the slit is then
sin ( 0.5β Lx sin θ cos ϕ )
F (θ , ϕ ) =
1 − sin 2 θ cos2 ϕ ⋅ (17.55)
0.5β Lx sin θ cos ϕ
The principal plane patterns are:
E-plane pattern (ϕ = π / 2) - omnidirectional!
Eθ = 1 (17.56)
H-plane pattern (ϕ = 0)
sin ( 0.5β Lx sin θ )
Eϕ cosθ ⋅
= (17.57)
(0.5β Lx sin θ )
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Beamwidths
(a) First-null beamwidth (FNBW)
We need the locations of the first nulls in the pattern in order to calculate the
FNBW. The nulls of the E-plane pattern are determined from (17.50) as
β Ly
sin θ=
/θ =θ n π , n 1, 2, ,
n= (17.58)
2
nλ
⇒ θn =
arcsin , rad. (17.59)
y
L
The first null occurs at n = 1 .
λ
2θ n 2arcsin
⇒ FNBWE == , rad. (17.60)
Ly
In a similar fashion, FNBWH is determined to be
λ
FNBWH = 2arcsin , rad. (17.61)
Lx
It is apparent that larger aperture widths lead to narrower beams.
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A first-order approximation is possible for very small arguments in (17.65), i.e.,
when Ly 0.443λ (large aperture):
λ
HPBWE ≈ 0.886 . (17.66)
Ly
The half-power beamwidth in the H-plane is analogous:
0.443λ
HPBWH ≈ 2arcsin . (17.67)
Lx
Side-lobe level
It is obvious from the properties of the | sin x / x | function that the first side lobe
has the largest maximum of all side lobes, and it is
sin 4.494
θ θ s ) |≈
| Eθ (= ≈ 0.217 ≈ −13.26 , dB. (17.68)
4.494
When evaluating side-lobe levels and beamwidths in the H-plane, one has to
include the cosθ factor. The larger the aperture, the less important this factor is.
Directivity
The antenna solid angle Ω A is needed to calculate the directivity from
D0 4π / Ω A .
= (17.69)
The radiation intensity in any direction can be expressed through the normalized
field pattern as
U (θ =
, ϕ ) U max ⋅ | F (θ , ϕ ) |2 . (17.70)
The far-field pattern | F (θ , ϕ ) | is available from (17.49), namely,
sin u sin v
F (θ , ϕ ) =
| E |= 1 − sin 2 θ cos2 ϕ ⋅ . (17.71)
u v
The antenna solid angle is then calculated as
2π π /2
Ω A =∫ ∫ | F (θ ,ϕ ) |2 sin θ dθ dϕ , (17.72)
0 0
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However, in the case of an aperture illuminated by a TEM wave, we can use
a simpler approach. Generally, for all aperture antennas, the assumption of a
uniform TEM wave at the aperture ( E = yˆ E0 ),
H a = −xˆ E0 / η , (17.73)
is quite accurate (although η is not necessarily the intrinsic impedance of the
medium; could be the wave impedance of a waveguide). The far-field
components in this case were already derived in (17.41) and (17.42). They lead
to the following expression for the radiation intensity,
β2
U (θ , ϕ ) = (1 + cos θ )2 (| I xE (θ , ϕ ) |2 + | I yE (θ , ϕ ) |2 ) . (17.74)
32π η
2
The maximum value of the function in (17.74) is derived after substituting the
radiation integrals from (17.26) and (17.27):
β2 2
U max = 2
8π η ∫∫S A
Ea ds′ . (17.75)
The integration of the radiation intensity (17.74) over a closed sphere is not
easy. It can be avoided by observing that the total power reaching the far zone
must have passed through the aperture in the first place. In an aperture, where the
field obeys (17.73), this power is determined as
1
=
Π ∫∫ Pav=
⋅ ds ∫∫
2η S A
| Ea |2 ds . (17.76)
S
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sin ( 0.5β Lx sin θ cos ϕ ) sin ( 0.5β Ly sin θ sin ϕ )
I yE (θ , ϕ ) 2 E0 Lx Ly ⋅ . (17.83)
(0.5β Lx sin θ cos ϕ ) ( 0.5β Ly sin θ sin ϕ )
The far-field components are obtained by substituting (17.83) into (17.41) and
(17.42):
Eθ = C sin ϕ
(1 + cosθ ) sin u sin v ,
2 u v
(17.84)
Eϕ = C cos ϕ
(1 + cosθ ) sin u sin v ,
2 u v
where
e− jβ r
C = j β Lx Ly E0 ,
2π r
u = 0.5β Lx sin θ cos ϕ ,
v = 0.5β Ly sin θ sin ϕ .
The far-field expressions in (17.84) are very similar to those of the aperture
mounted on a ground plane, see (17.48). For small values of θ , the patterns of
both apertures are practically identical.
An exact analytical evaluation of the directivity is difficult. However,
according to the approximations made, the directivity formula derived in (17.77)
should provide accurate enough value. According to (17.77), the directivity is the
same as in the case of the aperture mounted on a ground plane.
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equivalent sources distribution from a maximum at the aperture’s center to zero
values at its edges.
One practical aperture of tapered source distribution is the open rectangular
waveguide. The dominant TE10 mode has the following distribution:
π − Lx / 2 ≤ x′ ≤ Lx / 2
Ea = yˆ E0 cos x′ , (17.85)
Lx − Ly / 2 ≤ y′ ≤ Ly / 2
Ey x
The general procedure for the far-field analysis is the same as before (Sections 5
and 6). The only difference is in the field distribution. Again, only the integral
I yE (θ , ϕ ) is evaluated:
Ly /2
π
Lx /2
I yE (θ , ϕ ) 2 E0 ∫ cos x ′ e j β x′ sin θ cos ϕ dx ′ ⋅ ∫ e j β y ′ sin θ sin ϕ dy ′ . (17.86)
− Lx /2 Lx − Ly /2
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π j β x′ sin θ cos ϕ
Lx /2
I x (θ , ϕ ) = ∫ Lx x′ e
cos dx ′
− Lx /2
π
Lx /2
= ∫ Lx x′ cos ( β x′ sin θ cosϕ ) + j sin ( β x′ sin θ cos
cos = ϕ ) dx′
− Lx /2
1 x π π
L /2
= ∫
cos
2 − Lx /2 Lx
− β sin θ cos ϕ x
′ + cos
Lx
+ β sin θ cos ϕ x′ dx′ +
j x π π
L /2
2 − L∫x /2
+ sin β sin θ cos ϕ −
x ′ + cos β sin θ cos ϕ + x′ dx′
Lx Lx
β Lx
cos sin θ cos ϕ
π Lx 2
⇒ I x (θ , ϕ ) = (17.88)
2 π 2 β Lx
− sin θ cos ϕ
2 2
u −
2
2
(17.90)
π cos u
sin v
Eϕ (θ , ϕ ) =
− C cos θ cos ϕ ⋅ ⋅
2 π v
2
u −
2
2
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where
e− jβ r
C = j β Lx Ly E0 ,
2π r
u = 0.5β Lx sin θ cos ϕ ,
v = 0.5β Ly sin θ sin ϕ .
E-plane ( ϕ = 90 ):
β Ly
sin sin θ
Eθ = 2 (17.91)
β Ly
2 sin θ
H-plane ( ϕ = 0 ):
βL
cos x sin θ
Eϕ = cosθ 2 (17.92)
β Lx π
2 2
sin θ −
2 2
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H-PLANE PATTERN – UNIFORM VS. TAPERED ILLUMINATION ( Lx = 3λ ):
0
uniform
30 30 tapered
60 60
120 120
150 150
180
The lower SLL of the tapered-source pattern is obvious. It is better seen in the
rectangular plot given below. The price to pay for the lower SLL is the decrease
in directivity (the beamwidth of the major lobe increases).
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tapered
1 uniform
0.9
0.8
H-plane amplitude pattern
0.7
0.6
0.5
0.4
0.3
0.2
0.1
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0 H-plane
30 30 E-plane
60 60
120 240
150 210
180
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Half-power beamwidths:
50.6
HPBWE = , deg. (= HPBWE of the uniform aperture) (17.95)
Ly / λ
68.8
HPBWH = , deg. (> HPBWH of the uniform aperture) (17.96)
Lx / λ
The above results are approximate. Better results are obtained if the following
factors are taken into account:
• the phase constant of the waveguide β g and its wave impedance Z g are not
equal to the free-space phase constant β 0 = ω µ0ε 0 and intrinsic
impedance Z 0 = µ0 / ε 0 ; they are dispersive;
• the abrupt termination at the waveguide open end introduces reflection,
which affects the field at the aperture;
• there are strong fringe currents at the waveguide walls, which contribute to
the overall radiation.
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