AOD478/AOI478

100V N-Channel MOSFET

General Description Product Summary

The AOD478/AOI478 combines advanced trench VDS 100V

MOSFET technology with a low resistance package to ID (at VGS=10V) 11A
provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V) < 140mΩ
boost converters and synchronous rectifiers for
RDS(ON) (at VGS = 4.5V) < 152mΩ
consumer, telecom, industrial power supplies and LED
backlighting.

100% UIS Tested

100% Rg Tested

TO252 TO251A
DPAK IPAK
D
Top View Bottom View Top View Bottom View

D
D

G
S G G
S
D S
S D
G G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 11
ID
Current TC=100°C 8 A
C
Pulsed Drain Current IDM 24
Continuous Drain TA=25°C 2.5
IDSM A
Current TA=70°C 2
Avalanche Current C IAS, IAR 10 A
Avalanche energy L=0.1mH C EAS, EAR 5 mJ
TC=25°C 45
PD W
Power Dissipation B TC=100°C 23
TA=25°C 2.1
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17 25 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 55 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.7 3.3 °C/W

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 AOD478/AOI478

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 2.2 2.8 V
ID(ON) On state drain current VGS=10V, VDS=5V 24 A
VGS=10V, ID=4.5A 116 140
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 225 270
VGS=4.5V, ID=3A 121 152 mΩ
gFS Forward Transconductance VDS=5V, ID=4.5A 17 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous CurrentG 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 350 445 540 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 18 29 35 pF
Crss Reverse Transfer Capacitance 9 16 23 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8 10.3 13 nC
Qg(4.5V) Total Gate Charge 4 5.1 6.5 nC
VGS=10V, VDS=50V, ID=4.5A
Qgs Gate Source Charge 1.6 nC
Qgd Gate Drain Charge 2.4 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=8.6Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 4.5 ns
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=500A/µs 14.5 21 27.5 ns
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs 68 97 126 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD478/AOI478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15
15
VDS=5V
10V
4V 12

10 4.5V
9
6V
ID (A)

ID(A)
6
VGS=3.5V 125°C
5
3
25°C
0
0 0 1 2 3 4 5 6
0 1 2 3 4 5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

180 2.6

Normalized On-Resistance 2.4

160 2.2 VGS=10V

2 ID=4.5A
Ω)
RDS(ON) (mΩ

1.8 17
140 VGS=4.5V
1.6 5
2
1.4
120 VGS=4.5V 10
1.2 ID=3A
VGS=10V 1
100 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

280 1.0E+01
ID=4.5A
260
1.0E+00
240 125°C 40
220 1.0E-01 125°C
Ω)
RDS(ON) (mΩ

IS (A)

200
1.0E-02
180

160 1.0E-03 25°C

140
1.0E-04
120 25°C
100 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOD478/AOI478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 700
VDS=50V
ID=4.5A 600 Ciss
8
500

Capacitance (pF)
VGS (Volts)

6
400

300
4

200
2 Coss Crss
100

0 0
0 2 46 8 10 12 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 400
360 TJ(Max)=175°C
10µs TC=25°C
320
10.0 10µs 280
ID (Amps)

Power (W)

RDS(ON) 100µs 240 17

1.0 limited 200 5
DC 1ms
160 2
10ms
120 10
0.1 TJ(Max)=175°C
TC=25°C 80
40
0.0
0
0.01 0.1 1 10 100 1000
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=3.3°C/W 40
1

0.1 PD

Ton
T
0.01
Single Pulse
0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD478/AOI478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
IAR (A) Peak Avalanche Current

TA=25°C 50

Power Dissipation (W)

TA=100°C
40

10 TA=150°C
30

TA=125°C 20

10

1 0
1 10 100 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

15 10000

TA=25°C
12
1000
Current rating ID(A)

17
Power (W)

9
100
5
2
6
10
10
3

0 1
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOD478/AOI478

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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