2N6052

Preferred Device

Darlington Complementary
Silicon Power Transistors
This package is designed for general−purpose amplifier and low
frequency switching applications.

Features http://onsemi.com
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA 12 AMPERE
VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors POWER TRANSISTOR
• This is a Pb−Free Device* 100 VOLTS, 150 WATTS
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit COLLECTOR
CASE
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc BASE
1
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 12 Adc
Peak 20 EMITTER 2
Base Current IB 0.2 Adc
Total Power Dissipation @ TC = 25°C PD 150 W MARKING
Derate above 25°C 0.857 W/°C DIAGRAM
Operating and Storage Temperature TJ, Tstg −65 to + 200 °C
Range

THERMAL CHARACTERISTICS
2N6052G
Characteristic Symbol Max Unit 1 AYYWW
2 MEX
Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
TO−204AA (TO−3)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the CASE 1−07
Recommended Operating Conditions may affect device reliability. STYLE 1
1. Indicates JEDEC Registered Data.

160
2N6052 = Device Code
140 G = Pb−Free Package
PD, POWER DISSIPATION (WATTS)

A = Location Code
120 YY = Year
100 WW = Work Week
MEX = Country of Orgin
80

60
ORDERING INFORMATION
40
Device Package Shipping
20 2N6052G TO−3 100 Units/Tray
(Pb−Free)
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating Preferred devices are recommended choices for future use
and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

September, 2008 − Rev. 5 2N6052/D
 2N6052

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) VCEO(sus) 100 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0) ICEO
ICEX
− 1.0 mAdc
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc) − 0.5
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) − 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
hFE
750 18,000
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
100 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 6.0 Adc, IB = 24 mAdc) − 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 12 Adc, IB = 120 mAdc) − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc) VBE(sat) − 4.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common Emitter Small−Signal Short Circuit Forward |hfe| 4.0 − MHz
Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 500 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
2. Indicates JEDEC Registered Data.
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 − −

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

VCC 10
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V
D1 MUST BE FAST RECOVERY TYPE, eg: 2N6052
5.0 2N6059
1N5825 USED ABOVE IB ≈ 100 mA RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE ts
TUT
V2 RB 2.0
t, TIME (s)

approx tf
μ

+8.0 V
D1 1.0
51 ≈ 5.0 k ≈ 50
0
tr
V1 0.5
approx +4.0 V
td @ VBE(off) = 0 VCC = 30 V
-8.0 V 25 ms for td and tr, D1 is disconnected IC/IB = 250
and V2 = 0 0.2 IB1 = IB2
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0% TJ = 25°C
0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

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2
 2N6052

1.0
0.7
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
0.5
RESISTANCE (NORMALIZED)

0.3 0.2
0.2
0.1 P(pk)
RqJC(t) = r(t) RqJC
0.1 0.05 RqJC = 1.17°C/W MAX
0.07 D CURVES APPLY FOR POWER
0.02
0.05 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.03 0.01 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2
0.02 SINGLE
PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)

Figure 4. Thermal Response

There are two limitations on the power handling ability of ACTIVE−REGION SAFE OPERATING AREA
a transistor: average junction temperature and second 50
breakdown. Safe operating area curves indicate IC − VCE 0.1 ms
20
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater IC, COLLECTOR CURRENT (AMP)
10
dissipation than the curves indicate. 5.0 0.5 ms
The data of Figures 5, and 6 is based on TJ(pk) = 200_C; 1.0 ms
TC is variable depending on conditions. Second breakdown 2.0 5.0 ms
pulse limits are valid for duty cycles to 10% provided 1.0 TJ = 200°C
TJ(pk) v 200_C; TJ(pk) may be calculated from the data in 0.5
Figure 4. At high case temperatures, thermal limitations will SECOND BREAKDOWN LIMITED

reduce the power that can be handled to values less than the 0.2 BONDING WIRE LIMITED d­
limitations imposed by second breakdown. 0.1 THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
c

0.05
10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5.

3000 500
2000 TC = 25°C TJ = 25°C
hfe, SMALL-SIGNAL CURRENT GAIN

VCE = 3.0 V
1000 IC = 5.0 A 300
C, CAPACITANCE (pF)

500 200 Cib

200 Cob

100
100
70
50
30 50
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Small−Signal Current Gain Figure 7. Capacitance

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 2N6052

20,000
VCE = 3.0 V
10,000
TJ = 150°C

hFE , DC CURRENT GAIN

5000
3000
25°C
2000

1000 -55°C

500
300
200
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0
TJ = 25°C

2.6
IC = 3.0 A 6.0 A 9.0 A 12 A
2.2

1.8

1.4

1.0
0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)

2.0

1.5 VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

1.0

VCE(sat) @ IC/IB = 250

0.5
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

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 2N6052

PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
−T− SEATING
PLANE
E INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U E 0.055 0.070 1.40 1.77
L −Y−
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
−Q−
STYLE 1:
0.13 (0.005) M T Y M
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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