Beruflich Dokumente
Kultur Dokumente
®
TOPSwitch-HX
BR1 D6
3KBP08M R5 MBR20100CT
100 k7 FL2
R6 1/2 W
C10 R10 RTN
33 7 VR1
22 MF 301 7 1N5248B
3 50 V 1%
4 18 V
R3 R7 D5 C8
2.0 M7 5.1 M7 BAV 100 nF
D1 19WS
DL4937 5 50 V
R11
2 M7
L3 R22 C19
12 mH R4 R8 R18
20 k7 470 pF 680 7
2.0 M7 6.8 M7 50 V
C2
L2 120 MF R12
200 MH 400 V 5.1 k7
C5
100 nF D3
400 V BAV19WS
U3A
C9 ISP817C
100 nF U3B
R1 R2 TOPSwitch-HX 25 V ISP817C
2.2 M7 2.2 M7 U1
D V TOP259EN
F1 C1 CONTROL R19
C
4A 330 nF C17 68.1 k7
275 VAC 100 nF
L R15
S X F
C6 6.8 7 R21
E
100 nF 1 k7
C3 R9 50 V C7
N 470 pF 14 k7 47 MF
250 VAC 1% 16 V
90 - 265 U2
VAC LM431 R20
L1 2% 10 k7
Ferrite Bead 1%
PI-5023-071408
Figure 1: Schematic of a 65 W Notebook Adapter Power Supply Using TOPSwitch-HX TOP259EN.
PI-5049-032508
The primary side’s output overvoltage protection (OVP) senses the
bias-winding voltage using Zener diode VR1. This is used to 70
provide both open-loop protection and output-overload protection QP
60
under a single-fault condition. Resistors R10 and R11 with
AV
capacitor C8 determine the delay before shutdown is triggered. 50
This prevents false triggering during startup and load transients.
40
The value of R12 selects the hysteretic shutdown behavior of U1.
dBMV
Capacitor C9 helps to filter high frequency noise that may appear 30
on the V pin.
20
The output is rectified by diode D6 which has an RC snubber (C12 10
and R16) to dampen leakage inductance ringing and reduce
0
radiated EMI. The output is filtered by capacitors C13 and C14.
-10
Feedback is derived from the output via optocoupler U3A.
-20
Resistor R18 sets the DC gain. Shunt regulator U2 has an 0.15 1.0 10.0 100.0
accurate internal voltage reference, and with resistors R19 and
MHz
R20, sets the output voltage to 19 V.
Figure 3. Conducted EMI, EN55022 B Limits. Measurements Made at 230 VAC
With 5.6 Ω Resistive Load (Output Grounded).
Diode D3 prevents loading of the V pin by the OVP circuit and also
isolates the line sense circuit from the OVP circuit. Transformer Parameters
EE28, TDK or equivalent, gapped for ALG of
Core Material
299 nH/t²
320 Bobbin Vertical 10 pin, pin 6 to pin 10 are to be removed
PI-5048-032508
Bias: 5T × 3, 30 AWG
280
Primary 1: 17T × 2, 26 AWG
240 Shield: 1T Cu foil, 1 mil thick
Input Power (mW)
Winding Details
Secondary: 6T × 4, 26 AWG-TIW
200 Shield: 1T Cu foil, 1 mil thick
Primary 2: 17T × 2, 25 AWG
160 Bias (4–5), Primary-1 (3–2), Shield (1–NC),
Winding Order Secondary (FL1–FL2), Shield (1–NC),
120 Primary-2 (2–1)
0 Leakage
Inductance 4 μH (maximum)
90 115 140 165 190 215 240 265
Table 1. Transformer Parameters. (AWG = American Wire Gauge,
Input Voltage (VAC) TIW = Triple Insulated Wire, NC = No Connection)
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5245 Hellyer Avenue Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS
San Jose, CA 95138, USA. MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED
Main: +1 408-414-9200 WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
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Phone: +1-408-414-9665 one or more U.S. and foreign patents or potentially by pending U.S. and foreign patent applications assigned to Power Integrations.
Fax: +1-408-414-9765 A complete list of Power Integrations' patents may be found at www.powerint.com. Power Integrations grants
Email: usasales@powerint.com its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm.
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On the Web PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies.
www.powerint.com ©2008, Power Integrations, Inc.
A
07/08 DI-182