Bipolar Transistor

Dr. Ir. Mochamad Ashari

Dept. of Electrical Engineering
Institute of Technology Sepuluh Nopember (ITS)
Surabaya

Dr. Ir. Mochamad Ashari, M.Eng - ITS 1

Bipolar Transistor

‹ have 2 internal junctions and

3 terminal semiconductor
devices.
‹ The three terminals are
emitter, collector, and base.
‹ A transistor can be either NPN
or PN

Dr. Ir. Mochamad Ashari, M.Eng - ITS 2

1
 Transistor

‹ the direction of the emitter arrow

defines the type transistor.
‹
‹ Biasing and power supply polarity are
positive for NPN and negative for PNP
transistors.

Dr. Ir. Mochamad Ashari, M.Eng - ITS 3

Transistor Applications

‹ The transistor is primarily used as an current

amplifier.
‹ When a small current signal is applied to the
base terminal, it is amplified in the collector
circuit.
‹ This current amplification is referred to as HFE
or beta and equals Ic/Ib
‹ In Power Electronics, transistors are operated as
an electronic switch

Dr. Ir. Mochamad Ashari, M.Eng - ITS 4

2
 Transistor Operation

Dr. Ir. Mochamad Ashari, M.Eng - ITS 5

Transistor Characteristics

Dr. Ir. Mochamad Ashari, M.Eng - ITS 6

3
 Transistor Characteristics

‹ Breakdown voltage is a design limitation

‹ There are breakdown voltages that must be
taken into account for each combination of
terminals. i.e. Vce, Vbe,and Vcb.
‹ Vce(collector-emitter voltage) with open base,
designated as Vceo, is usually of most concern
and defines the maximum circuit voltage

Dr. Ir. Mochamad Ashari, M.Eng - ITS 7

Transistor Characteristics

‹ The output current increases with input or base

current
‹ The output current varies very little with
collector-emitter voltage
‹ Undesireable characteristics:
– Icbo, collector junction leakage
– Iebo, emitter junction leakage

Dr. Ir. Mochamad Ashari, M.Eng - ITS 8

4
 Dynamic Characteristics

ig

vQ,
iQ

Vo Io

Dr. Ir. Mochamad Ashari, M.Eng - ITS 9

Transistor Summary

‹ Primary considerations when selecting a transistor

are:
(a) Voltage ratings of all three junctions
(b) Power rating and thermal resistance
(c) Current handling capability and the transistor case size
(d) Leakage currents, mainly Icbo and Iebo
(e) Frequency response and /or switching times.
(f) Current gain (HFE and hfe)
(g) Temperature parameter variation.
(h) Saturation resistance

Dr. Ir. Mochamad Ashari, M.Eng - ITS 10