DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS
signed for high current switching applications. (in millimeters)

10.0 ±0.3 4.5 ±0.2

FEATURES 3.2 ±0.2
2.7 ±0.2
• Low On-Resistance
RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)
RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)

15.0 ±0.3

3 ±0.1

12.0 ±0.2
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings

4 ±0.2
13.5 MIN.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS ±20 V
0.7 ±0.1 1.3 ±0.2 2.5 ±0.1
Drain Current (DC) ID(DC) ±15 A
1.5 ±0.2 0.65 ±0.1
Drain Current (pulse)* ID(pulse) ±60 A
2.54 2.54
Total Power Dissipation (Tc = 25 ˚C) PT1 30 W
1. Gate
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W 2. Drain
Channel Temperature Tch 150 ˚C 3. Source
Storage Temperature Tstg –55 to +150 ˚C 1 2 3
Single Avalanche Current** IAS 15 A
Single Avalanche Energy** EAS 22.5 mJ MP-45F(ISOLATED TO-220)
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
Drain
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

Body
Gate Diode

Gate Protection
Diode Source

The diode connected between the gate and source of the

transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.

Document No. D10031EJ1V0DS00

Date Published May 1995 P
Printed in Japan
© 1995
 2SK2462

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 0.10 0.14 Ω VGS = 10 V, ID = 8.0 A

Drain to Source On-Resistance RDS(on)2 0.12 0.17 Ω VGS = 4 V, ID = 8.0 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 7.0 14 S VDS = 10 V, ID = 8.0 A

Drain Leakage Current IDSS 10 µA VDS = 100 V, VGS = 0

Gate to Source Leakage Current IGSS ±10 µA VGS = ±20 V, VDS = 0
Input Capacitance Ciss 790 pF VDS = 10 V

Output Capacitance Coss 280 pF VGS = 0

Reverse Transfer Capacitance Crss 88 pF f = 1 MHz
Turn-On Delay Time td(on) 16 ns ID = 8.0 A

Rise Time tr 110 ns VGS(on) = 10 V

Turn-Off Delay Time td(off) 88 ns VDD = 50 V
Fall Time tf 62 ns RG = 10 Ω

Total Gate Charge QG 33 nC ID = 15 A

Gate to Source Charge QGS 5.4 nC VDD = 80 V
Gate to Drain Charge QGD 25 nC VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.1 V IF = 15 A, VGS = 0

Reverse Recovery Time trr 160 ns IF = 15 A, VGS = 0
Reverse Recovery Charge Qrr 670 nC di/dt = 100 A/µs

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RL
VGS VGS 90 %
RG = 25 Ω L
Wave 010 %
VGS (on)
RG Form
PG VDD
50 Ω VDD PG. RG = 10 Ω
ID 90 %
VGS = 20 → 0 V 90 %
ID
VGS ID 10 % 10 %
IAS BVDSS Wave 0
0
VDS Form td (on) tr td (off) tf
ID t
VDD ton toff
t = 1µs
Duty Cycle ≤ 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG.
50 Ω
VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SK2462

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
100 70
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

60
80
50
60
40

40 30

20
20
10

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C TC - Case Temperature - ˚C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE
100 PW
50
d ID(pulse) Pulsed
ite V) 10 =1
im 0 0
)L =1 0
n s
µ

o S
S(
RD t VG s 40
µ

(a ID(DC)
ID - Drain Current - A

1 ID - Drain Current - A
m VGS = 10 V
10 s
30 VGS = 6 V
Po 1
w 20 0m
er 0m s
Di DC s
ss
ipa 20
1 tio VGS = 4 V
n
Lim
ite 10
d
TC = 25 ˚C
Single Pulse
0.1
1 10 100 1000 0 2 4 6 8
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

1000
Pulsed
ID - Drain Current - A

100

10 TA = –25 ˚C
25 ˚C
125 ˚C

1
VDS=10 V

0 5 10 15
VGS - Gate to Source Voltage - V

3
 2SK2462

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

rth(t) - Transient Thermal Resistance - ˚C/W

Rth(ch-a) = 62.5 ˚C/W
100

10

1
Rth(ch-c) = 4.17 ˚C/W

0.1

0.01
Single Pulse
0.001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-State Resistance - mΩ
DRAIN CURRENT GATE TO SOURCE VOLTAGE
1000
Pulsed
| yfs | - Forward Transfer Admittance - S

VDS =10 V 140

Pulsed
TA = – 25 ˚C 120
25 ˚C
75 ˚C
100 125 ˚C 100

80 ID=7.5 A

60
10
40

20
1
0.1 1 10 100 0 10 20 30
ID- Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RDS(on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(off) - Gate to Source Cutoff Voltage - V

0.3 Pulsed VDS = 10 V

2.0 ID = 1 mA

1.5
0.2

VGS = 4 V 1.0

0.1
VGS =10 V 0.5

0 0
1 10 100 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4
 2SK2462

SOURCE TO DRAIN DIODE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
RDS(on) - Drain to Source On-State Resistance - Ω
FORWARD VOLTAGE
CHANNEL TEMPERATURE
Pulsed
0.4 1000

ISD - Diode Forward Current - A

0.3
100

0.2 VGS = 4 V
10 4V
VGS = 0
0.1 VGS = 10 V
1
ID = 8.0 A
0
–50 0 50 100 150 0 1.0 2.0 3.0
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 000 VGS = 0 1 000

td(on), tr, td(off), tf - Switching Time - ns

f = 1 MHz
tr
Ciss, Coss, Crss - Capacitance - pF

td(off)
Ciss
1 000 100

Coss tf

100 Crss 10 td(on)

VDD = 50 V
VGS = 10 V
10 1.0 RG = 10 Ω
1 10 100 1 000 0.1 1.0 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10 000
di/dt = 50 A/ µ s 80
VDD = 80 V
16
VGS = 0
ID = 15 A
trr - Reverse Recovery time - ns

VDS - Drain to Source Voltage - V

14
VGS - Gate to Source Voltage - V
60 12
1 000 VDS
10

40 8
VGS

100 6

20 4

2
10
0.1 1.0 10 100 0 10 20 30 40
ID - Drain Current - A Qg - Gate Charge - nC

5
 2SK2462

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 160
VDD = 50 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = 20 V → 0

Energy Derating Factor - %

IAS = 15 A IAS <= 15 A
120
10 EAS
=2 100
2.5
mJ
80

60
1.0
40
VDD = 50 V 20
VGS = 20 V → 0
RG = 25 Ω 0
10 µ 100 µ 1m 10 m 25 50 75 100 125 150 175
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

6
 2SK2462

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

7
 2SK2462

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11
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