ISL9R860P2, ISL9R860S3ST

October 2009

ISL9R860P2, ISL9R860S3ST
8A, 600V Stealth™ Diode
General Description Features
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are • Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5
Stealth™ diodes optimized for low loss performance in • Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current • Operating Temperature . . . . . . . . . . . . . . . 175oC
(IRRM) and exceptionally soft recovery under typical
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
operating conditions.
This device is intended for use as a free wheeling or • Avalanche Energy Rated
boost diode in power supplies and other power Applications
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery • Switch Mode Power Supplies
minimizes ringing, expanding the range of conditions • Hard Switched PFC Boost Diode
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the • UPS Free Wheeling Diode
Stealth™ diode with an SMPS IGBT to provide the
• Motor Drive FWD
most efficient and highest power density design at
lower cost. • SMPS FWD
Formerly developmental type TA49409. • Snubber Diode

Package Symbol
JEDEC TO-220AC JEDEC TO-263AB

K
ANODE CATHODE
CATHODE CATHODE (FLANGE)
(FLANGE)

N/C
A
ANODE

Device Maximum Ratings TC= 25°C unless otherwise noted

Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VR DC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 147oC) 8 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
PD Power Dissipation 85 W
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL Maximum Temperature for Soldering
TPKG Leads at 0.063in (1.6mm) from Case for 10s 300 °C
Package Body for 10s, See Techbrief TB334 260 °C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2

 ISL9R860P2, ISL9R860S3ST
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R860P2 ISL9R860P2 TO-220AC - -
R860S3S ISL9R860S3ST TO-263AB 24mm 800

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

IR Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C - - 1.0 mA

On State Characteristics
VF Instantaneous Forward Voltage IF = 8A TC = 25°C - 2.0 2.4 V
TC = 125°C - 1.6 2.0 V

Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A - 30 - pF

Switching Characteristics
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns
trr Reverse Recovery Time IF = 8A, - 28 - ns
IRRM Maximum Reverse Recovery Current dIF/dt = 200A/µs, - 3.2 - A
QRR Reverse Recovery Charge VR = 390V, TC = 25°C - 50 - nC
trr Reverse Recovery Time IF = 8A, - 77 - ns
S Softness Factor (tb/ta) dIF/dt = 200A/µs, - 3.7 -
IRRM Maximum Reverse Recovery Current VR = 390V, - 3.4 - A
TC = 125°C
QRR Reverse Recovery Charge - 150 - nC
trr Reverse Recovery Time IF = 8A, - 53 - ns
S Softness Factor (tb/ta) dIF/dt = 600A/µs, - 2.5 -
IRRM Maximum Reverse Recovery Current VR = 390V, - 6.5 - A
TC = 125°C
QRR Reverse Recovery Charge 195 - nC
dIM/dt Maximum di/dt during tb - 500 - A/µs

Thermal Characteristics
RθJC Thermal Resistance Junction to Case - - 1.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2

 ISL9R860P2, ISL9R860S3ST
Typical Performance Curves
16
100
175oC
14 175oC

150oC

IR, REVERSE CURRENT (µA)

150oC
IF, FORWARD CURRENT (A)

12
25oC
10 10
125oC
125oC
8
100oC
6 100oC
1
4
25oC
2

0 0.1
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 100 200 300 400 500 600

VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)

Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage

80 90
VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C
70 80
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A
70
60
t, RECOVERY TIMES (ns)

t, RECOVERY TIMES (ns)

60
50
50
40
40
30
30
20
20

10
10
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs ta AT IF = 16A, 8A, 4A
0 0
0 2 4 6 8 10 12 14 16
100 200 300 400 500 600 700 800 900 1000
IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)

Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt

14
IRRM , MAX REVERSE RECOVERY CURRENT (A)
IRRM , MAX REVERSE RECOVERY CURRENT (A)

11
dIF/dt = 800A/µs VR = 390V, TJ = 125°C
VR = 390V, TJ = 125°C
10 12

9
10 IF = 16A
8
dIF/dt = 500A/µs IF = 8A
8
7

6 6 IF = 4A

5
dIF/dt = 200A/µs 4
4
2
3

2 0
0 2 4 6 8 10 12 14 16 100 200 300 400 500 600 700 800 900 1000
IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)

Figure 5. Maximum Reverse Recovery Current vs Figure 6. Maximum Reverse Recovery Current vs
Forward Current dIF/dt

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2

 ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Typical Performance Curves (Continued)
6 350
S, REVERSE RECOVERY SOFTNESS FACTOR

VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C

QRR, REVERSE RECOVERY CHARGE (nC)

300
5 IF = 16A

250
4 IF = 16A
IF = 8A 200 IF = 8A

3
150

IF = 4A IF = 4A
2
100

1 50
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs) dIF /dt, CURRENT RATE OF CHANGE (A/µs)

Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Reverse Recovery Charge vs dIF/dt

1200
10
IF(AV), AVERAGE FORWARD CURRENT (A)

1000
CJ , JUNCTION CAPACITANCE (pF)

800
6

600
4

400
2
200

0
140 145 150 155 160 165 170 175
0
0.1 1 10 100
TC, CASE TEMPERATURE (oC)
VR , REVERSE VOLTAGE (V)

Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve

DUTY CYCLE - DESCENDING ORDER

0.5
1.0 0.2
0.1
0.05
THERMAL IMPEDANCE

0.02
ZθJA, NORMALIZED

0.01
PDM

0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA

0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)

Figure 11. Normalized Maximum Transient Thermal Impedance

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2

 ISL9R860P2, ISL9R860S3ST
Test Circuits and Waveforms

VGE AMPLITUDE AND

RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF dIF trr
IF
dt ta tb
DUT CURRENT
0
RG SENSE
+
VGE VDD 0.25 IRM
t1 MOSFET - IRM

t2

Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions

I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL
L R

CURRENT +
SENSE IL IL
Q1 VDD
I V

DUT -

t0 t1 t2 t

Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2

 ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions

TO-220AC

Dimensions in Millimeters
 ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions

TO-263AB
10.67 -A-
9.65 12.70
1.68
4 1.00

9.45
9.65
8.38

10.00
1.78 MAX (6.40)

2
3.80
1 3

(2.12) 1.78 1.05

1.14
0.99
5.08
0.51 LAND PATTERN RECOMMENDATION
5.08 0.25 M B AM UNLESS NOTED, ALL DIMS TYPICAL

-B-
4.83
4.06
6.22 MIN
1.65
1.14

4 6.86 MIN

15.88
14.61

SEE
DETAIL A

3 1

NOTES: UNLESS OTHERWISE SPECIFIED

A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M - 1994.
D) LOCATION OF THE PIN HOLE MAY VARY
GAGE PLANE
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
0.74 E) LANDPATTERN RECOMMENDATION PER IPC
0.25 0.33 8
0 TO254P1524X482-3N
F) FILENAME: TO263A02REV6

0.10 B
2.79 8
0.25 MAX 1.78 0
(5.38)
SEATING
PLANE Dimensions in Millimeters
DETAIL A, ROTATED 90
SCALE: 2X
 ISL9R860P2, ISL9R860S3ST
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Rev. I41

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