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Nanotechnology

Nanotechnology 25 (2014) 495603 (10pp) doi:10.1088/0957-4484/25/49/495603

Solid-state dewetting of ultra-thin Au films


on SiO2 and HfO2
G Seguini, J Llamoja Curi, S Spiga, G Tallarida, C Wiemer and M Perego
Laboratorio MDM, IMM-CNR, Via C Olivetti 2, I-20864 Agrate Brianza (MB), Italy

E-mail: michele.perego@mdm.imm.cnr.it

Received 5 September 2014, revised 14 October 2014


Accepted for publication 3 November 2014
Published 20 November 2014

Abstract
Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room
temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-
state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the
substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely
tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order
of 1012 Au NPs cm−2 were obtained without any additional thermal treatment independently
from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be
effective for h ⩾ 1.0 nm where the Au NPs diameter is in the 5–10 nm range and the density is
around 1011 Au NPs cm−2. The effect of a subsequent high temperature (400–800 °C) annealing
in N2 atmosphere on the Au NPs was investigated as well. For h ⩽ 1.0 nm, the Au NPs
characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the
cristallinity of the Au NPs. For the thicker films (2.0 ⩽ h ⩽ 6.0 nm), the thermal treatment
becomes effective to induce the SSD. The proposed methodology can be exploited for the
synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

Keywords: Au, solid state dewetting, nanoparticles


(Some figures may appear in colour only in the online journal)

1. Introduction heating, and ion or electron irradiation [10, 11, 13, 19]. Upon
thermal treatment, SSD proceeds by surface diffusion even in
Many fields of solid-state technology currently use metal the solid-state well below the melting temperature of the film
nanoparticles (NPs). The functional properties noticeably [2, 3, 13]. This behavior is different from the one of poly-
depend on the choice of metal (e.g. Au, Ag, Pt, Co…) [1–6], meric films that are in the liquid state even close to room
the type of the supporting substrate, and the morphology of temperature (RT) [1, 20, 21]. The driving force for SSD
the NPs, i.e., size, density, and shape. Small variations of the increases and thus the rate of dewetting is accelerated with
metal NPs configuration can lead to dramatic changes in the decreasing film thickness. Therefore, the temperature at which
electrical and optical properties [7–12]. SSD occurs decreases with decreasing film thickness. More-
The deposition conditions of the thin films on a selected over, the manipulation of the spatial distribution and of the
surface along with the post-deposition treatments influence density of the metal NPs can be achieved depositing a
the morphology of the metal NPs. Indeed, after deposition sacrificial layer of Sb between the metal layer and the sub-
with different techniques, such as sputtering and e-beam or strate oxide [6]. Usually, a further problem is how to control
resistive heating evaporation, a thin metallic film on a surface the SSD process in order to enhance the long-range ordering.
can develop holes and eventually disintegrate into separated This can be achieved either by controlling the local surface
objects [7, 13–18]. Dewetting of metallic films on a substrate, tension of the substrate by means of patterned surfaces or by a
which is referred as solid-state dewetting (SSD), is driven by local perturbation of thin films with a probe or a stamp
the reduction of the surface energy of the thin film and of the [14, 22, 23].
interface energy between the film and the substrate. SSD can The various technological applications for metal NPs
be induced or accelerated by thermal annealing, pulsed laser cover electronic, magnetic, and optical devices, as well as

0957-4484/14/495603+10$33.00 1 © 2014 IOP Publishing Ltd Printed in the UK


Nanotechnology 25 (2014) 495603 G Seguini et al

electromechanical systems, plasmon-enhanced solar cells, 3. Results and discussion


photo electrochemical water splitting, and coatings
[12, 24, 25]. Diagnosis, antimicrobial activity, and advanced 3.1. As-deposited Au films
sensing, such as localized surface plasmon resonance sensing,
Figure 1 reports the SEM images for the Au films deposited at
surface-enhanced Raman scattering, and second harmonic
different h (0.5, 1.0, 2.0, 4.0, and 6.0 nm) on SiO2 (left col-
generation, should be mentioned too [26–28]. In particular,
umn) and HfO2 (right column). The analysis of the SEM
very small metal NPs maximize the number of surface atoms,
images qualitatively allows to study the evolution of the
which are fundamental in catalytic systems [29–32]. Beyond surface morphology and to highlight the different growth
the applications, also the physical properties of thin films in regimes as a function of h. For 0.5 ⩽ h ⩽ 1.0 nm, the SEM
the presence of an interface earn a fundamental interest images clearly evidence a nucleation regime of the Au NPs.
[30, 33–35]. The thickness (h) of the as-deposited films is a With increasing h to the 1.0–2.0 nm range, the system enters a
robust technological parameter to manage the final config- growth regime with nuclei that start to grow forming bigger
uration of the metal NPs. The superior chemical stability, the and bigger Au NPs. The reported SEM images for the case
strong plasmonic activity, the catalytic role, and the high h = 2.0 nm indicate that this transition is slightly anticipated
electrical conductivity make Au one of the most interesting for the SiO2 substrate. Further increasing h from 2.0 to
metals [3, 32]. 4.0 nm, these structures start to coalesce with the formation of
This work systematically investigates the Au NPs char- islands. Finally, for h = 6.0 nm, the islands merge forming a
acteristics resulting from the SSD of ultra-thin, connected structure without yet reaching a complete coverage
0.5 nm ⩽ h ⩽ 6.0 nm, Au films deposited at RT by means of e- of the surface. Apart from the slight difference at h = 2.0 nm,
beam evaporation on SiO2 and HfO2 substrates. The proposed the SEM images do not evidence any other significant dif-
route allows tailoring ultra-small (diameter well below 10 nm) ference between the as-deposited Au films on SiO2 and on
Au NPs on different substrates at RT. The effects of a sub- HfO2 substrates.
sequent high temperature (T) thermal treatment in N2 atmo- The effective h of the Au films and the corresponding
sphere on the Au NPs population are elucidated as well. electronic densities were derived by XRR analysis; data are
reported in table 1, whereas the comparison between the
effective h and the nominal h is reported in figure 2(a) for
both SiO2 and HfO2. The effective h values measured by
2. Experimental XRR are proportional to the nominal h measured by the
quartz microbalance during the evaporation. The proportion-
Either SiO2 and HfO2 oxides (10 nm thick) were prepared on ality factor is 1.30 for the deposition on the HfO2 substrate
a H-terminated Si(100) substrates (the native oxide was while it is 1.34 for the deposition on the SiO2 substrate. This
removed by HF cleaning). SiO2 films were obtained by linear dependence allows a well-defined nanometric control
thermal oxidation of the Si surface in O2 ambient at 900 °C on the h of the deposited Au films. On the other hand, the
whereas HfO2 was deposited by e-beam evaporation at RT in electronic densities measured by XRR (table 1), which are
high vacuum (base pressure 5 × 10−7 mbar) from HfO2 pellets lower than the reference bulk value (4.42 e− Ǻ−3) of Au,
[36]. Atomic force microscopy (AFM) measurements on the corroborate the SEM observation that the Au films are not
surface of both SiO2 and HfO2 revealed a limited root mean continuous on the substrate surface. Moreover, the significant
square roughness (≈0.1 nm), thus fixing flat interfaces for the difference between the density values on the two oxides
subsequent Au deposition. The Au deposition was performed suggests that the effective amount of Au deposited on SiO2
and HfO2 is considerably different. In order to highlight this
at RT in an e-beam evaporator system equipped with a four-
point the equivalent h of the deposited films, which is defined
crucible e-beam gun working in high vacuum. The h of the
as the virtual h of a continuous Au film formed by the amount
evaporated Au films was in situ monitored by a quartz
of Au effectively deposited on the surface, was calculated.
microbalance. The thermal treatments were performed in a
Based on the h and the electronic density measured by XRR,
Rapid Thermal Process machine in N2 flux in a T range from
the percent of Au in the volume of the deposited film was
400 to 800 °C for 60–300 s. The h and the structural prop- extrapolated (table 1). Figure 2(b) reports the equivalent h
erties of the Au films were measured by means of x-ray versus the nominal h. The trend of the equivalent h evidences
reflectivity (XRR) and x-ray diffraction (XRD) using a con- a peculiar behavior of the two substrates: the amount of Au
ventional laboratory Cu Kα x-ray source equipped with a four effectively deposited on SiO2 and HfO2 is different. In par-
circle goniometer, a parabolic multilayer monochromator, a ticular, the proportionality factor for the deposition on SiO2
scintillator, and a position-sensitive detector. The Au NPs doubles that for the deposition on HfO2. Because the eva-
were characterized by scanning electron microscopy (SEM) poration on the two substrates were simultaneously per-
with an accelerating voltage of 15 kV. The characteristic formed, these differences should be attributed to the peculiar
dimensions (average diameter and density) of the Au NPs interaction of the impinging Au atoms with the host surface.
were determined by statistical analysis of the SEM images Namely, the sticking coefficient, i.e. the ratio of the incoming
using the software Scanning Probe Image Processor (SPIP, atoms over the desorbed atoms, of the SiO2 substrate doubles
V5.0, Image Metrology A/S). that of the HfO2.

2
Nanotechnology 25 (2014) 495603 G Seguini et al

Figure 1. (On the left column) SEM images of the Au thin film (h = 0.5, 1.0, 2.0, 4.0, and 6.0 nm) as-deposited at RT by means of e-beam
evaporation on SiO2. (On the right column) SEM images of the Au thin film (h = 0.5, 1.0, 2.0, 4.0, and 6.0 nm) as-deposited at RT by means
of e-beam evaporation on HfO2.

3
Nanotechnology 25 (2014) 495603 G Seguini et al

Figure 2. (On the left) XRR measured h versus the nominal h of the as-deposited at RT Au films. (On the right) the equivalent h of the Au
films is calculated considering the electronic density measured by XRR and plotted versus the nominal h.

Table 1. Nominal thickness, measured thickness, electron density, and percentage of Au considering an electron density of Au of 4.42 e− Ǻ−3
for the Au films deposited on SiO2 and on HfO2 substrates.
SiO2 HfO2
Nominal thick- Measured thick- Electronic density Measured thick- Electronic density
ness (nm) ness (nm) (e/Ǻ3) % Au ness (nm) (e/Ǻ3) % Au
1 3.35 1.50 33.9 4.30 1.44 32.5
2 5.40 2.42 54.7 5.54 1.89 42.7
4 7.92 3.19 72.1 8.20 1.90 42.4
6 10.30 3.79 85.6 — — —

In order to characterize the resulting Au NPs population, with the substrate is clearly different, which results in a higher
a detailed statistical analysis of the SEM images of the equivalent h (figure 2(b)) along with a larger Au NPs diameter
samples with h = 0.5 nm and h = 1.0 nm was carried out to and smaller density for the SiO2 than for the HfO2 substrate
derive the average diameter and the density of the Au NPs. (figure 3). It could be speculated that for h = 0.5 nm the
For these ultra-thin films deposited at RT, the SSD occurs interactions between the Au atoms are stronger than those
without any additional thermal treatment in agreement with between the atoms and the substrate. This corresponds to an
the fact that the T at which SSD occurs decreases with h. incubation stage of the SSD during which the contact area
Figure 3 reports the statistical distribution of the Au NPs with the substrate is too small to affect the aggregation pro-
diameters. The size distributions were fitted using a Gaussian cess of the Au film.
function. The quantitative analysis of the SEM images evi- Comprehensively, the average diameter and the density
dences that for h = 0.5 nm the mean diameter of the Au NPs is of the Au NPs evidence that the capability to produce dense
the same on the two substrates and that the density is above distribution of Au NPs well below 10 nm diameter by means
1012 Au NPs cm−2 in both cases. On the contrary, in the case of e-beam evaporation at RT of Au films with h ⩽ 1.0 nm is
already effective upon natural SSD without any additional
of h = 1.0 nm, the two distributions start to diverge in terms of
thermal treatments. Noticeably, for h = 0.5 nm the SSD is
the average value and width. Indeed, for h = 0.5 nm the dia-
independent on the substrate.
meter is 2.8/2.9 ± 0.9 nm for both the substrates. Whereas, for
h = 1.0 nm, although the equivalent h is the same for both
3.2. Annealed Au films
substrates, the Au NPs distribution reveals that the growth
evolution is affected by the specific substrate. Precisely, the The stability of the Au NPs population against thermal
diameter is larger (7.3 ± 1.6 versus 4.6 ± 1.3 nm) and the treatment at different T is crucial for the applicative exploi-
density is smaller (6.2 × 1011 versus 10.6 × 1011 Au NPs cm−2) tation of this manufacturing method and for the investigation
for SiO2 than for HfO2 [6]. For h ⩾ 1.0 nm, the interaction of SSD process in thin films as well. Figure 4 reports the SEM

4
Nanotechnology 25 (2014) 495603 G Seguini et al

Figure 3. Statistical evaluation of the mean diameter, width, and density of the Au NPs on SiO2 (on the left) and HfO2 (on the right) for as-
deposited at RT Au films with h = 0.5 and 1.0 nm.

Figure 4. SEM images of the Au thin film (h = 0.5, 1.0. 2.0, 4.0, and 6.0 nm) deposited by means of e-beam evaporation on SiO2 upon a
thermal treatment at T = 500 °C for 60 s. The size distribution reported in the histograms allowed the evaluation of the mean diameter and
width of the resulting Au NPs.

5
Nanotechnology 25 (2014) 495603 G Seguini et al

Figure 5. SEM images of the Au thin film (h = 1.0 nm) deposited by means of e-beam evaporation on SiO2 upon a thermal treatment at
different T: 400, 500, 600, 700, and 800 °C for 60 s.

images for the Au films with different h on SiO2 after a spherical-like nanostructures with diameter below 10 nm. On
thermal treatment in N2 at 500 °C for 60 s. The samples with the other hand, for h ⩾ 2.0 nm, the thermal treatment drives
h = 0.5, 1.0, and 2.0 nm evidence spherical-like Au NPs. It is the as-deposited coalesced nanostructures towards isolated
interesting to note that the as-deposited samples reported in nanostructures with irregular shape and average size above
figure 1, exhibiting spherical-like nanostructures (h = 0.5 and 10 nm. Due to the rate of SSD being accelerated with
1.0 nm), preserved their configuration with a limited variation decreasing h, these data fix the transition from natural to
of the average diameter of the nanostructures. Conversely, the thermally induced SSD at h ≈ 2.0 nm. Only above this
h = 2.0 nm film underwent a significant morphological evo- threshold, an additional thermal treatment is required to
lution from irregular and quite dense islands (figure 1) to induce the SSD process. Similar behavior (not shown) was
spherical-like structures (figure 4) suggesting that the addi- detected for the HfO2 substrate. The quantitative analysis
tional thermal treatment drives the system toward the allowed to obtain the size distributions reported in figure 4.
achievement of a thermodynamic equilibrium configuration. Both the average diameter and the width of the size dis-
Similar evolution occurred for h = 4.0 and 6.0 nm where the tribution increase with increasing h. The variation of the
films started with an almost continuous Au layer (figure 1) width upon annealing, for h values ranging from 0.5 nm to
and rearranged upon annealing forming well-defined and 1.0 nm, is negligible suggesting that a thermodynamic equi-
separated nanostructures (figure 4). This reconfiguration of librium condition has been already achieved during the RT
the Au NPs is associated with a significant increase of their deposition. Differently, the width distribution for h = 2.0 nm
mean heights as indicated by the contrast of the SEM images after thermal treatment is very large, corroborating the
and confirmed by AFM measurements (data not shown). observation of an early stage of the thermal induced SSD.
Summarizing, for h < 2.0 nm, the Au films naturally (as- The Au NPs resulting from h = 1.0 nm already evidence
deposited at RT) and upon thermal treatment form Au the effect of the different substrates, but they are quite

6
Nanotechnology 25 (2014) 495603 G Seguini et al

0.5 nm 1 nm 2 nm

Diameter (nm) 15

10

5
SiO2
HfO2

20
SiO2
HfO2
Density (x 1011 ncs/cm3)

15

10

0
0 400 800 0 400 800 0 400 800

Annealing temperature (°C)


Figure 6. Statistical comparison of the mean diameter and density for the Au NPs deposited on SiO2 and HfO2 for different thermal
treatments and for h = 0.5, 1.0, and 2.0 nm.

unaffected by the thermal treatment. For this reason this h and density as a function of the annealing T. This study was
value was selected as the representative one in order to evi- systematically performed on the h = 0.5 nm (where the Au
dence the thermal stability upon different annealing T. NPs characteristics are substrate independent) and h = 2.0 nm
Figure 5 reports the SEM images for h = 1.0 nm after (where the thermal induced SSD is effective) as well. The
annealing in N2 for 60 s at different T: 400, 500, 600, 700, overall results are reported in figure 6. These data allow
and 800 °C. These images qualitatively evidence that for this several considerations. First, increasing h the mean diameter
starting Au thickness, where the natural SSD process was increases, while the density decreases. Moreover, considering
already effective in the as-deposited state, the variations upon the cases h = 0.5 nm and h = 1.0 nm the mean diameter slightly
thermal treatment are very limited. These images therefore increases with increasing the annealing T. Then, for the as-
indicate a very good thermal stability against the high T deposited sample with h = 2.0 nm, the absence of regular
thermal treatments. Because the natural SSD is already structures without thermal induced SSD inhibits an accurate
effective to drive the system toward a thermodynamic equi- statistical analysis of the mean diameter. Finally, for
librium, the subsequent thermal treatment scarcely affects the h ⩾ 1.0 nm the Au NPs formed on HfO2 substrate have
system [3]. Software analysis of these images allowed smaller diameter and larger density, than those formed, under
quantitatively to study the evolution of the Au NPs diameter the same experimental conditions, i.e. h and T, on SiO2. In

7
Nanotechnology 25 (2014) 495603 G Seguini et al

Figure 7. XRD spectra of the Au NPs formed on SiO2 and HfO2 substrates as function of h (1.0 or 4.0 nm) of the deposited Au film and of the
annealing conditions (as-deposited and annealed at T = 500 °C for 60 s).

addition, for h = 2.0 nm (where the thermal induced SSD is signature of the preferential orientation increases by increas-
effective) a further test was performed to verify the stability of ing h and it is higher in the films grown on HfO2 than SiO2. It
the Au nanoparticles upon prolonged thermal treatments. The is worth to note that no evidence of crystal structure was
samples were annealed at T = 600 °C for different annealing observed neither in the SiO2 nor in the HfO2 as-deposited
times ranging from 60 s to 300 s. The values of the mean substrates as opposed to the thermal treated HfO2 substrates
diameter and of the density of the Au NPs are unaffected by that undergo crystallization with a mixture of monoclinic and
the prolonged annealing indicating that the final equilibrium cubic (or orthorhombic, or tetragonal) structures. For
condition was achieved by the system already in 60 s. h = 1.0 nm the SSD dewetting is already effective in the as-
Settled h as the reference fabrication parameter, the deposited samples and the effects of the thermal treatment on
overall results on the thermal stability of the RT deposited the Au NPs characteristics are limited. However, the thermal
films evidence the dependence of the Au NPs characteristics treatment improves the crystallization of the Au NPs. On the
on the type of substrate. The proper selection of the process contrary, for thicker samples, i.e. h = 4.0 nm, where the SSD
conditions (annealing T) and the type of substrate reveal a was effective only upon the thermal treatment, the preferential
technological strategy to reach the desired Au NPs properties. 111-direction perpendicular to the substrate is already evident
in the as-deposited state. Considering h as the reference
parameter to monitor the Au NPs characteristics, these facts
3.3. Structural characteristics indicate that the SSD and the crystallization processes in the
In order to deeply evidence the Au NPs peculiarities, the Au NPs follow quite independent paths.
structural properties of the Au NPs were studied as well.
Figure 7 reports the XRD spectra for the Au films deposited
on SiO2 (left column) and HfO2 (right column) for two 4. Conclusions
representative Au film thickness, h = 1.0 nm, for the thinner
regime, and h = 4.0 nm, for the thicker regime. The investi- The peculiarities of the SSD of e-beam deposited ultra-thin
gation considered both the as-deposited and annealed samples Au films with 0.5 ⩽ h ⩽ 6.0 nm have been investigated. In
upon a thermal treatment in N2 at 500 °C for 60 s. XRD particular, the attention was focused on ultra-thin thicknesses
analysis evidences the preferential orientation along the 111- (h ⩽ 2.0 nm). The SSD was able to produce Au NPs with
direction perpendicular to substrate for the Au NPs on the diameter well below 10 nm and density around 1012 Au
SiO2 substrate. This feature is present for h = 1.0 nm after the NPs cm−2. For h = 0.5 nm Au films, the SSD results in iden-
thermal treatment. Similarly, for HfO2 substrates, after tical Au NPs characteristics on both SiO2 and HfO2 sub-
annealing a signature of a preferential orientation with 111- strates. At this thickness, the interaction with the substrate is
direction perpendicular to the substrate emerges. The not yet affecting the film organization at RT. The resulting Au

8
Nanotechnology 25 (2014) 495603 G Seguini et al

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